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1. 发明授权

US07121474B2 Electro-optical nanocrystal memory device 有权
公开(公告)号：US07121474B2
公开(公告)日：2006-10-17
申请号：US10465354
申请日：2003-06-18
申请人： George I. Bourianoff , Robert Lindstedt , Harry A. Atwater , Maria Giorgi , Robert J. Walters , Julie D. Casperson , Pieter G. Kik
发明人： George I. Bourianoff , Robert Lindstedt , Harry A. Atwater , Maria Giorgi , Robert J. Walters , Julie D. Casperson , Pieter G. Kik
IPC分类号： G06K19/06
CPC分类号： G11C13/047 , G11C11/21 , G11C11/22
摘要： A memory device. The memory device includes a substrate and an array of nanocrystals formed proximate to the substrate. The array of nanocrystals is electrically insulated to hold charge carriers therein. A presence of charge carriers within the array of nanocrystals represents a first logic state of the memory device. An absence of the charge carriers within the array of nanocrystals represents a second logic state of the memory device. The presence and the absence of the charge carriers is determinable via directing a beam of photons onto the array of nanocrystals and sensing an optical response.

2. 发明授权

US08963579B2 Spin torque magnetic integrated circuits and devices therefor 有权
标题翻译：自旋扭矩磁性集成电路及其设备
公开(公告)号：US08963579B2
公开(公告)日：2015-02-24
申请号：US13460193
申请日：2012-04-30
申请人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
发明人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
IPC分类号： H03K19/23 , H03K19/003 , G06F11/00 , H01L43/08 , B82Y25/00 , H01F10/32 , H01L43/12 , G11C11/16 , H01F41/30 , G01R33/09 , G01R33/12 , H01F10/13 , H01L27/22
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/133 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L27/22 , H01L27/228 , H01L43/12
摘要： Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.
摘要翻译：描述了自旋扭矩磁集成电路及其装置。在一个示例中，用于逻辑电路的自旋扭矩磁性装置包括多数门结构。输出耦合到多数门结构。三个输入也耦合到多数门结构。

3. 发明申请

US20120217993A1 SPIN TORQUE MAGNETIC INTEGRATED CIRCUITS AND DEVICES THEREFOR 有权
标题翻译：旋转扭矩磁性集成电路及其器件
公开(公告)号：US20120217993A1
公开(公告)日：2012-08-30
申请号：US13460193
申请日：2012-04-30
申请人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
发明人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
IPC分类号： H03K19/23
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/133 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L27/22 , H01L27/228 , H01L43/12
摘要： Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.
摘要翻译：描述了自旋扭矩磁集成电路及其装置。在一个示例中，用于逻辑电路的自旋扭矩磁性装置包括多数门结构。输出耦合到多数门结构。三个输入也耦合到多数门结构。

4. 发明授权

US06972467B2 Multi-gate carbon nano-tube transistors 失效
标题翻译：多栅极碳纳米管晶体管
公开(公告)号：US06972467B2
公开(公告)日：2005-12-06
申请号：US10402780
申请日：2003-03-28
申请人： Yuegang Zhang , Brian S. Doyle , George I. Bourianoff
发明人： Yuegang Zhang , Brian S. Doyle , George I. Bourianoff
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L26/76 , H01L29/94
CPC分类号： H01L29/785 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L29/41791 , H01L29/42384 , H01L29/42392 , H01L29/4908 , H01L29/66795 , H01L29/772 , H01L29/7854 , H01L29/78645 , H01L29/78696 , H01L51/0048 , H01L51/0554 , Y10S977/742 , Y10S977/842 , Y10S977/938
摘要： According to one aspect of the invention, a semiconducting transistor is described. The channel portion of the transistor includes carbon nanotubes formed on top of an insulating layer which covers a local bottom gate. Source and drain conductors are located at ends of the carbon nanotubes. A gate dielectric surrounds a portion of the carbon nanotubes with a substantially uniform thickness. A local top gate is located between the source and drain conductors over the carbon nanotubes. Lower portions of the local top gate are positioned between the carbon nanotubes as the local top gate forms pi-gates or “wraparound” gates around each carbon nanotube.
摘要翻译：根据本发明的一个方面，描述了半导体晶体管。晶体管的沟道部分包括形成在覆盖局部底栅的绝缘层的顶部上的碳纳米管。源极和漏极导体位于碳纳米管的端部。栅极电介质以基本均匀的厚度围绕碳纳米管的一部分。局部顶栅位于碳纳米管之间的源极和漏极导体之间。局部顶栅的下部位于碳纳米管之间，因为局部顶栅在每个碳纳米管周围形成边界或“环绕”门。

5. 发明申请

US20130256818A1 METHODS OF FORMING SPIN TORQUE DEVICES AND STRUCTURES FORMED THEREBY 有权
标题翻译：形成旋转扭矩装置的方法和形成的结构
公开(公告)号：US20130256818A1
公开(公告)日：2013-10-03
申请号：US13901807
申请日：2013-05-24
申请人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
发明人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L43/08 , H01L43/12 , H03K19/18 , H03K19/23
摘要： Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non-magnetic layer, and forming an output pillar on the non-magnetic layer to form a majority gate device.
摘要翻译：描述了形成自旋转矩微电子器件的方法。这些方法可以包括在衬底上形成自由的FM层，在自由FM层上形成非磁性层，在非磁性层上形成至少三个输入柱，并在非磁性层上形成输出柱，至形成多数门装置。

6. 发明授权

US08450818B2 Methods of forming spin torque devices and structures formed thereby 有权
标题翻译：形成自旋扭矩装置和由此形成的结构的方法
公开(公告)号：US08450818B2
公开(公告)日：2013-05-28
申请号：US12456581
申请日：2009-06-18
申请人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
发明人： Dmitri E. Nikonov , George I. Bourianoff , Ajey P. Jacob
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L43/08 , H01L43/12 , H03K19/18 , H03K19/23
摘要： Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non-magnetic layer, and forming an output pillar on the non-magnetic layer to form a majority gate device.
摘要翻译：描述了形成自旋转矩微电子器件的方法。这些方法可以包括在衬底上形成自由的FM层，在自由FM层上形成非磁性层，在非磁性层上形成至少三个输入柱，并在非磁性层上形成输出柱，至形成多数门装置。

7. 发明申请

US20110147816A1 SPIN TORQUE MAGNETIC INTEGRATED CIRCUITS AND DEVICES THEREFOR 有权
标题翻译：旋转扭矩磁性集成电路及其器件
公开(公告)号：US20110147816A1
公开(公告)日：2011-06-23
申请号：US12642342
申请日：2009-12-18
申请人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
发明人： Dmitri E. Nikonov , George I. Bourianoff , Tahir Ghani
IPC分类号： H01L29/82 , H01L21/28
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/133 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L27/22 , H01L27/228 , H01L43/12
摘要： Spin torque magnetic integrated circuits and devices therefor are described. A spin torque magnetic integrated circuit includes a first free ferromagnetic layer disposed above a substrate. A non-magnetic layer is disposed above the first free ferromagnetic layer. A plurality of write pillars and a plurality of read pillars are included, each pillar disposed above the non-magnetic layer and including a fixed ferromagnetic layer.
摘要翻译：描述了自旋扭矩磁集成电路及其装置。自旋扭矩磁集成电路包括设置在基板上方的第一自由铁磁层。非磁性层设置在第一自由铁磁层的上方。包括多个写柱和多个读柱，每个柱设置在非磁性层之上并且包括固定的铁磁层。

8. 发明授权

US07655517B2 Spin polarization amplifying transistor 失效
标题翻译：旋转偏振放大晶体管
公开(公告)号：US07655517B2
公开(公告)日：2010-02-02
申请号：US11387223
申请日：2006-03-22
申请人： Dmitri E. Nikonov , George I. Bourianoff
发明人： Dmitri E. Nikonov , George I. Bourianoff
IPC分类号： H01L21/8238
CPC分类号： H01L29/66984 , Y10T428/24843
摘要： An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.
摘要翻译：本发明的一个实施例是部分由具有足够高的铁磁转变温度的铁磁半导体形成的晶体管，以相干地放大电流的自旋极化。例如，注入的非极化控制电流在晶体管基极内产生铁磁条件，使小的自旋极化信号电流产生较大输出电流的自发磁化。

9. 发明申请

US20140092664A1 Associative Memory Oscillator Array 有权
标题翻译：关联存储器振荡器阵列
公开(公告)号：US20140092664A1
公开(公告)日：2014-04-03
申请号：US13629935
申请日：2012-09-28
申请人： George I. Bourianoff , Dmitri E. Nikonov
发明人： George I. Bourianoff , Dmitri E. Nikonov
IPC分类号： G11C15/00 , G11C27/00
CPC分类号： G11C15/02 , G11C15/04 , G11C15/046
摘要： An embodiment of the invention includes an analog associative memory, which includes an array of coupled voltage or current controlled oscillators, that matches patterns based on shifting frequencies away from a center frequency of the oscillators. The test and memorized patterns are programmed into the oscillators by varying the voltage or current that controls the oscillators. Matching patterns result in smaller shifts of frequencies and enable synchronization of oscillators. Non-matching patterns result in larger shifts and preclude synchronization of oscillators. In one embodiment the patterns each include binary data and the pattern matching is based on discrete shifts. In one embodiment the patterns each include grayscale data and the pattern matching is based on continuously-varied shifts. Other embodiments are described herein.
摘要翻译：本发明的实施例包括模拟相关存储器，其包括耦合电压或电流控制振荡器的阵列，其匹配基于偏离振荡器的中心频率的移位频率的模式。通过改变控制振荡器的电压或电流将测试和存储的模式编程到振荡器中。匹配模式导致频率偏移较小，并使振荡器能够同步。非匹配模式导致更大的偏移，并排除振荡器的同步。在一个实施例中，图案各自包括二进制数据，并且模式匹配基于离散移位。在一个实施例中，模式各自包括灰度数据，并且模式匹配基于连续变化的移位。本文描述了其它实施例。

10. 发明申请

US20120154063A1 SPIN TORQUE OSCILLATOR HAVING MULTIPLE FIXED FERROMAGNETIC LAYERS OR MULTIPLE FREE FERROMAGNETIC LAYERS 有权
标题翻译：旋转扭矩振荡器具有多个固定的FERROMAGNETIC层或多个免费的FERROMAGNETIC层
公开(公告)号：US20120154063A1
公开(公告)日：2012-06-21
申请号：US12973269
申请日：2010-12-20
申请人： Dmitri E. Nikonov , George I. Bourianoff
发明人： Dmitri E. Nikonov , George I. Bourianoff
IPC分类号： H01S1/02 , H01L43/12
CPC分类号： H03B15/006 , B82Y40/00 , H01F10/3254 , H01F10/329 , H01F41/308 , H01L43/08 , H01L43/12 , H01S1/02 , H03L7/26
摘要： A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.
摘要翻译：自旋扭矩振荡器及其制造方法。自旋扭矩振荡器被配置为在不使用外部的磁场的情况下产生微波电振荡，所述自旋扭矩振荡器具有多个输入纳米柱中的一个和具有多个自由FM层的纳米柱。

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