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1. 发明申请

US20040256686A1 Method for manufacturing a micro-electro-mechanical device, in particular an optical microswitch, and micro-electro-mechanical device thus obtained 有权
标题翻译：微机电装置，特别是光学微动开关的制造方法以及如此获得的微电子机械装置
公开(公告)号：US20040256686A1
公开(公告)日：2004-12-23
申请号：US10821263
申请日：2004-04-08
申请人： STMicroelectronics S.r.l.
发明人： Simone Sassolini , Mauro Marchi , Marco Del Sarto , Lorenzo Baldo
IPC分类号： H01L029/82 , H01L021/30
CPC分类号： H01L21/76898 , B81B2201/033 , B81B2201/045 , B81C1/00484 , B81C1/00896 , B81C2201/019 , G02B6/357 , G02B6/3584
摘要： A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein.
摘要翻译：一种具有支撑部件和操作部件的微电子机械装置的制造方法，包括提供具有第一层半导体材料的第一半导体晶片和布置在第一层顶部的第二半导体材料层，形成在第二层中的装置的第一支撑部分和第一操作部分，在第一层中形成临时锚固件，以及将第一晶片结合到第二晶片，第二层面向第二晶片。在将第一晶片和第二晶片接合在一起之后，所述器件的第二支撑部件和第二操作部分形成在第一层中。将临时锚固件从第一层移除以释放其中形成的操作部件。

2. 发明申请

US20040253795A1 METHODS OF PRODUCING A HETEROGENEOUS SEMICONDUCTOR STRUCTURE 有权
标题翻译：产生异质半导体结构的方法
公开(公告)号：US20040253795A1
公开(公告)日：2004-12-16
申请号：US10839131
申请日：2004-05-06
发明人： Muriel Martinez , Alice Boussagol
IPC分类号： H01L021/30
CPC分类号： H01L21/76254 , H01L21/76259
摘要： The present invention relates to a method for forming a heterogeneous assembly of first and second materials having different coefficients of thermal expansion. The method includes bonding a surface of a first substrate of a first material to a surface of a second substrate of a second material wherein the first substrate includes a zone of weakness therein to define a transfer layer adjacent the first surface, providing a stiffening substrate of a third material to maintain sufficient flatness and prevent breakage of the transfer layer during detachment from the first substrate, and detaching the transfer layer from the first substrate along the zone of weakness to form a heterogeneous assembly of the transfer layer and second substrate. The stiffening substrate is bonded to one of the first or second substrates and the third material has a coefficient of thermal expansion that is the same as or close to that of the material of the substrate to which the stiffening substrate is bonded to facilitate a successful detachment of the transfer layer from the first substrate.
摘要翻译：本发明涉及一种用于形成具有不同热膨胀系数的第一和第二材料的非均匀组件的方法。该方法包括将第一材料的第一衬底的表面结合到第二材料的第二衬底的表面，其中第一衬底包括其中的弱化区，以限定邻近第一表面的转移层，提供加强基底第三材料，以在从第一基板分离期间保持足够的平整度并防止转印层的破坏，以及沿着弱化区域将转印层从第一基板分离，以形成转印层和第二基板的非均匀组件。加强基板粘合到第一或第二基板中的一个，并且第三材料的热膨胀系数与加强基板结合的基板的材料的热膨胀系数相同或接近，以促进成功的分离的转移层。

3. 发明申请

US20040235267A1 Lamination and delamination technique for thin film processing 审中-公开
公开(公告)号：US20040235267A1
公开(公告)日：2004-11-25
申请号：US10444395
申请日：2003-05-23
发明人： James Sheats , Tue Nguyen
IPC分类号： H01L021/44 , H01L021/00 , H01L021/84 , H01L021/30
CPC分类号： H01L21/6835 , H01L21/67092 , H01L21/67132 , H01L29/66757 , H01L29/66765 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , H05K3/046
摘要： This invention discloses a releasable adhesion layer having good adhesion during high temperature fabrication process in the absence of light, and delaminating at a lower temperature in the presence of light. One embodiment of this invention is a film of polymer whose thermal decomposition temperature changes drastically upon photoexposure. These materials, prior to photoexposure, can withstand temperatures in the range of approximately 200null C. to 300null C. without decomposition, yet decompose at around 100null C. with photoexposure. The releasable adhesion layer can be used in a thermal transfer element, sandwiching a donor substrate and a transfer layer having a plurality of multicomponent transfer units. In the absence of light, the releasable adhesion layer can sustain high temperature processing of these multicomponent transfer units. By photoexposing according to a pattern, the photoexposed multicomponent transfer units can be selectively released at a low temperature to transfer to a receptor.

4. 发明申请

US20040224489A1 Member and member manufacturing method 失效
标题翻译：会员制造方法
公开(公告)号：US20040224489A1
公开(公告)日：2004-11-11
申请号：US10838269
申请日：2004-05-05
申请人： CANON KABUSHIKI KAISHA
发明人： Hajime Ikeda , Nobuhiko Sato , Kiyofumi Sakaguchi
IPC分类号： H01L021/30
CPC分类号： H01L21/76259 , H01L21/306
摘要： A porous structure with high uniformity is provided even when evaluated at a high resolution (high evaluation standard) of several or several ten nm or less. By applying this porous structure to the manufacture of an SOI substrate, an SOI substrate which has an SOI layer with a small number of defects is provided. In a region at a depth of 5 to 10 nm from the surface of a porous Si layer, values of parameters such as porosity and the like which represent a porous structure are uniformed. The manufacture of an SOI substrate using this porous Si layer reduces recessed defects in an SOI layer.
摘要翻译：即使以几个或几十纳米或更小的高分辨率（高评价标准）进行评估，也提供了高均匀性的多孔结构。通过将这种多孔结构应用于SOI衬底的制造，提供了具有少量缺陷的SOI层的SOI衬底。在多孔Si层的表面的深度为5〜10nm的区域中，表示多孔结构的孔隙率等参数的值均匀。使用该多孔Si层的SOI衬底的制造减少SOI层中的凹陷缺陷。

5. 发明申请

US20040224480A1 MICROMECHANICAL STRAINED SEMICONDUCTOR BY WAFER BONDING 有权
标题翻译：通过波形粘结的微机械应变半导体
公开(公告)号：US20040224480A1
公开(公告)日：2004-11-11
申请号：US10431137
申请日：2003-05-07
申请人： Micron Technology, Inc.
发明人： Leonard Forbes
IPC分类号： H01L021/30 , H01L021/46
CPC分类号： H01L27/105 , H01L21/02002 , H01L21/76254 , H01L21/823412 , H01L29/7842
摘要： One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first semiconductor wafer such that the surface of the first semiconductor wafer has a number of raised areas and a number of recessed areas. A surface of a second semiconductor wafer is bonded to the raised areas of the first semiconductor wafer in an environment having a first pressure. The surface of the second semiconductor wafer is bonded to the recessed areas of the first semiconductor wafer in an environment having a second pressure. The second pressure is greater than the first pressure to influence the second semiconductor wafer into contact with the first semiconductor wafer in the recesses in the surface of the first semiconductor wafer. Other aspects are provided herein.
摘要翻译：本文公开的一个方面涉及形成应变半导体结构的方法。在该方法的各种实施例中，在第一半导体晶片的表面中形成多个凹槽，使得第一半导体晶片的表面具有多个凸起区域和多个凹入区域。第二半导体晶片的表面在具有第一压力的环境中被接合到第一半导体晶片的凸起区域。第二半导体晶片的表面在具有第二压力的环境中被接合到第一半导体晶片的凹陷区域。第二压力大于在第一半导体晶片的表面的凹部中影响第二半导体晶片与第一半导体晶片接触的第一压力。本文提供了其他方面。

6. 发明申请

US20040180549A1 Semiconductor device, method of manufacturing the same, circuit board and electronic apparatus 失效
标题翻译：半导体装置及其制造方法，电路基板及电子设备
公开(公告)号：US20040180549A1
公开(公告)日：2004-09-16
申请号：US10642737
申请日：2003-08-19
申请人： Seiko Epson Corporation
发明人： Fumiaki Karasawa , Takeshi Yuzawa
IPC分类号： H01L021/311 , H01L021/30 , H01L021/46 , H01L021/44
CPC分类号： H01L21/6836 , H01L21/3043 , H01L21/78 , H01L2221/68327 , H01L2224/11
摘要： (PROBLEM) To improve the productivity and the yield of a product, and to grind a semiconductor substrate so that it has almost uniform thickness. (MEANS TO SOLVE THE PROBLEM) A protrusion 40 is formed on a semiconductor substrate 10 having a first area 20 and a second area 30 surrounding the first area 20, the protrusion 40 protruding above first area 20. A support 60 is disposed on a surface on which the protrusion 40 is formed, of the semiconductor substrate 10 so that a through hole 61 of the support 60 overlaps with the first area 20. The semiconductor substrate 10is grinded from a surface opposite to the surface on which the protrusion 40 is formed.
摘要翻译：（问题）提高产品的生产率和产量，并且研磨半导体衬底以使其具有几乎均匀的厚度。（解决问题的手段）在具有第一区域20的半导体基板10和包围第一区域20的第二区域30的半导体基板10上形成突起40，突起40突出在第一区域20的上方。支撑体60设置在表面在其上形成有突起40的半导体衬底10，使得支撑件60的通孔61与第一区域20重叠。半导体衬底10从与形成有突起40的表面相反的表面研磨。

7. 发明申请

US20040171232A1 Method of detaching a thin film at moderate temperature after co-implantation 有权
标题翻译：共植后在中等温度下分离薄膜的方法
公开(公告)号：US20040171232A1
公开(公告)日：2004-09-02
申请号：US10703694
申请日：2003-11-06
申请人： CEA , SOITEC
发明人： Ian Cayrefourcq , Nadia Ben Mohamed , Christelle Lagahe-Blanchard , Nguyet-Phuong Nguyen
IPC分类号： H01L021/46 , H01L021/30 , H01L021/78 , H01L021/301
CPC分类号： H01L21/76254
摘要： A method of detaching a thin film from a source substrate comprises the following steps: implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.
摘要翻译：从源底层分离薄膜的方法包括以下步骤：在源极衬底中注入离子或气态物质，以便在其中形成由于存在缺陷而被削弱的掩埋区; 在弱化区分裂，导致薄膜与源极基板分离。植入两种植物，其中一种适于形成缺陷，另一种适于占据这些缺陷，该脱离是在低于仅以第一种的剂量获得脱离的温度的温度下进行的。

8. 发明申请

US20040161904A1 Two-stage annealing method for manufacturing semiconductor substrates 有权
标题翻译：用于制造半导体衬底的两阶段退火方法
公开(公告)号：US20040161904A1
公开(公告)日：2004-08-19
申请号：US10733431
申请日：2003-12-10
申请人： SOITEC & CEA
发明人： Cecile Berne , Bruno Ghyselen , Chrystelle Lagahe , Thibaut Maurice
IPC分类号： H01L021/30
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the source substrate to a handle substrate to form a source-handle structure. The source-handle-structure is then annealed at a first energy level that is lower than the energy of a thermal detachment budget and stopping before detachment of the source substrate. Lastly, the source-handle-structure is annealed at a second energy level that is lower than the first energy level at least until the substrate detaches at the predetermined detachment area.
摘要翻译：本发明涉及异种材料结构的制造方法。该方法包括在源极基板中形成预定的分离区域，并将源极基板接合到手柄基板上以形成源极 - 手柄结构。然后，源 - 把手结构在低于热分离预算的能量的第一能级退火并在源衬底分离之前停止。最后，源手柄结构在低于第一能级的第二能级退火，至少直到基板在预定的分离区域分离。

9. 发明申请

US20040157407A1 Room temperature metal direct bonding 有权
标题翻译：室温金属直接粘接
公开(公告)号：US20040157407A1
公开(公告)日：2004-08-12
申请号：US10359608
申请日：2003-02-07
申请人： Ziptronix
发明人： Qin-Yi Tong , Paul M. Enquist , Anthony Scot Rose
IPC分类号： H01L021/30 , H01L021/46
CPC分类号： H01L21/76251 , B23K20/02 , H01L21/481 , H01L24/09 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/28 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/90 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/13011 , H01L2224/13099 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/80801 , H01L2224/81011 , H01L2224/81013 , H01L2224/81014 , H01L2224/81136 , H01L2224/81143 , H01L2224/81193 , H01L2224/81208 , H01L2224/8121 , H01L2224/81801 , H01L2224/81815 , H01L2224/8183 , H01L2224/81894 , H01L2224/83095 , H01L2224/8319 , H01L2224/8334 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8385 , H01L2224/83894 , H01L2224/83895 , H01L2224/83907 , H01L2224/9202 , H01L2225/06513 , H01L2924/00013 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/1532 , H01L2924/351 , Y10T29/49126 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/05644 , H01L2924/00014 , H01L2224/05664 , H01L2224/05669 , H01L2224/05124 , H01L2224/05147
摘要： A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
摘要翻译：一种粘结器件结构，包括具有第一组金属接合焊盘的第一衬底，优选地连接到器件或电路，并且具有与第一衬底上的金属焊盘相邻的第一非金属区域，第二衬底具有第二衬底一组金属接合焊盘与第一组金属焊盘对准，优选地连接到器件或电路，并且具有与第二衬底上的金属焊盘相邻的第二非金属区域，以及位于第二衬底之间的接触接合界面通过第一非金属区域与第二非金属区域的接触接合形成的第一和第二组金属接合焊盘。第一和第二基板中的至少一个可能弹性变形。

10. 发明申请

US20040142540A1 Wafer bonding for three-dimensional (3D) integration 失效
标题翻译：晶圆贴合三维（3D）集成
公开(公告)号：US20040142540A1
公开(公告)日：2004-07-22
申请号：US10695328
申请日：2003-10-27
发明人： Scot A. Kellar , Sarah E. Kim , R. Scott List
IPC分类号： H01L021/30
CPC分类号： H01L25/50 , H01L21/185 , H01L21/743 , H01L21/76898 , H01L24/12 , H01L24/16 , H01L24/72 , H01L24/75 , H01L25/0657 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/13099 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/16 , H01L2224/2919 , H01L2224/75315 , H01L2224/81203 , H01L2224/81894 , H01L2224/81895 , H01L2225/06513 , H01L2225/06541 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/13091 , H01L2924/14 , H01L2924/30107 , H01L2924/0665 , H01L2924/00014
摘要： A three-dimensional (3-D) integrated chip system is provided with a first wafer including one or more integrated circuit (IC) devices; a second wafer including one or more integrated circuit (IC) devices; and a metal bonding layer deposited on opposing surfaces of the first and second wafers at designated locations to establish electrical connections between active IC devices on the first and second wafers and to provide metal bonding between the adjacent first and second wafers, when the first wafer is pressed against the second wafer using a flexible bladder press to account for height differences of the metal bonding layer across the opposing surfaces of the first and second wafers.
摘要翻译：三维（3-D）集成芯片系统设置有包括一个或多个集成电路（IC）装置的第一晶片; 包括一个或多个集成电路（IC）装置的第二晶片; 以及在指定位置沉积在第一和第二晶片的相对表面上的金属粘结层，以在第一和第二晶片上的有源IC器件之间建立电连接，并且当第一晶片为使用柔性膀胱压力机压在第二晶片上，以考虑穿过第一和第二晶片的相对表面的金属粘合层的高度差异。

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