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1. 发明申请

US20040058476A1 Wafer bonding hermetic encapsulation 有权
标题翻译：晶圆粘合气密封装
公开(公告)号：US20040058476A1
公开(公告)日：2004-03-25
申请号：US10253588
申请日：2002-09-25
申请人： Ziptronix
发明人： Paul M. Enquist , Qin-Yi Tong , Gaius Gillman Fountain JR. , Robert Markunas
IPC分类号： H01L021/48
CPC分类号： B81C1/00269 , B81C2203/0118 , H01L21/50 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H01L2924/00
摘要： A method for providing encapsulation of an electronic device which obtains an encapsulating member configured to enclose the electronic device, prepares a surface of the encapsulating member for non-adhesive direct bonding, prepares a surface of a device carrier including the electronic device for non-adhesive direct bonding, and bonds the prepared surface of the encapsulating member to the prepared surface of the device carrier to form an encapsulation of the electronic device. As such, an encapsulated electronic device results which includes the device carrier having a first bonding region encompassing the electronic device, includes the encapsulating member having at least one relief preventing contact between the electronic device and the encapsulating member and having a second bonding region bonded to the first bonding region of the device carrier, and includes a non-adhesive direct bond formed between the first and second bonding regions thereby to form an encapsulation of the electronic device. The encapsulated electronic device can be an electronic or optoelectronic device.
摘要翻译：一种用于提供电子设备的封装的方法，该电子设备获得构造成封闭电子设备的封装构件，准备用于非粘合剂直接接合的封装构件的表面，准备包括用于非粘合剂的电子设备的设备载体的表面直接结合，并将封装构件的制备表面粘合到装置载体的制备表面上以形成电子器件的封装。因此，包括具有包围电子设备的第一接合区域的器件载体的封装的电子器件包括具有至少一个防止接触电子器件与封装元件之间的防止接触的封装元件，并且具有第二接合区域装置载体的第一结合区域，并且包括在第一和第二接合区域之间形成的非粘合性直接结合，从而形成电子器件的封装。封装的电子器件可以是电子或光电器件。

2. 发明申请

US20040157407A1 Room temperature metal direct bonding 有权
标题翻译：室温金属直接粘接
公开(公告)号：US20040157407A1
公开(公告)日：2004-08-12
申请号：US10359608
申请日：2003-02-07
申请人： Ziptronix
发明人： Qin-Yi Tong , Paul M. Enquist , Anthony Scot Rose
IPC分类号： H01L021/30 , H01L021/46
CPC分类号： H01L21/76251 , B23K20/02 , H01L21/481 , H01L24/09 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/28 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/90 , H01L25/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/13011 , H01L2224/13099 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/80801 , H01L2224/81011 , H01L2224/81013 , H01L2224/81014 , H01L2224/81136 , H01L2224/81143 , H01L2224/81193 , H01L2224/81208 , H01L2224/8121 , H01L2224/81801 , H01L2224/81815 , H01L2224/8183 , H01L2224/81894 , H01L2224/83095 , H01L2224/8319 , H01L2224/8334 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8385 , H01L2224/83894 , H01L2224/83895 , H01L2224/83907 , H01L2224/9202 , H01L2225/06513 , H01L2924/00013 , H01L2924/01003 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/1532 , H01L2924/351 , Y10T29/49126 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/05644 , H01L2924/00014 , H01L2224/05664 , H01L2224/05669 , H01L2224/05124 , H01L2224/05147
摘要： A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
摘要翻译：一种粘结器件结构，包括具有第一组金属接合焊盘的第一衬底，优选地连接到器件或电路，并且具有与第一衬底上的金属焊盘相邻的第一非金属区域，第二衬底具有第二衬底一组金属接合焊盘与第一组金属焊盘对准，优选地连接到器件或电路，并且具有与第二衬底上的金属焊盘相邻的第二非金属区域，以及位于第二衬底之间的接触接合界面通过第一非金属区域与第二非金属区域的接触接合形成的第一和第二组金属接合焊盘。第一和第二基板中的至少一个可能弹性变形。

3. 发明申请

US20040235266A1 Method of room temperature covalent bonding 有权
标题翻译：室温共价键的方法
公开(公告)号：US20040235266A1
公开(公告)日：2004-11-25
申请号：US10440099
申请日：2003-05-19
申请人： Ziptronix, Inc.
发明人： Qin-Yi Tong
IPC分类号： H01L021/30
CPC分类号： B32B7/04 , B32B2250/04 , B81C1/00357 , B81C2201/019 , B81C2203/0118 , B81C2203/019 , H01L21/3105 , H01L21/76251 , H01L24/26 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/08059 , H01L2224/29186 , H01L2224/80896 , H01L2224/81894 , H01L2224/81895 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/9202 , H01L2224/9212 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01067 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/07802 , H01L2924/10253 , H01L2924/1305 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T428/24355 , Y10T428/24942 , Y10T428/31504 , Y10T428/31678 , H01L2924/3512 , H01L2924/00 , H01L2924/05442
摘要： A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.
摘要翻译：接合方法包括使用具有氟化氧化物的接合层。可以通过暴露于含氟溶液，蒸汽或气体或通过注入将氟引入结合层。接合层也可以使用在其形成期间将氟引入层中的方法形成。接合层的表面用所需的物质，优选NH 2物质终止。这可以通过将结合层暴露于NH 4 OH溶液来实现。在室温下获得高粘结强度。该方法还可以包括将两个结合层结合在一起并产生在接合层之间的界面附近具有峰的氟分布。结合层之一可以包括彼此形成的两个氧化物层。氟浓度也可以在两个氧化物层之间的界面处具有第二个峰。

4. 发明申请

US20030211705A1 Method for low temperature bonding and bonded structure 有权
公开(公告)号：US20030211705A1
公开(公告)日：2003-11-13
申请号：US10460418
申请日：2003-06-13
申请人： Ziptronix, Inc.
发明人： Qin-Yi Tong , Gaius Gillman Fountain JR. , Paul M. Enquist
IPC分类号： H01L021/30 , H01L021/46
CPC分类号： H01L24/83 , H01L21/0206 , H01L21/2007 , H01L21/31105 , H01L21/31116 , H01L21/322 , H01L21/76251 , H01L24/26 , H01L24/75 , H01L25/0657 , H01L25/50 , H01L27/085 , H01L29/06 , H01L29/16 , H01L2224/8301 , H01L2224/8303 , H01L2224/83031 , H01L2224/8309 , H01L2224/83099 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83948 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/0102 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01061 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01084 , H01L2924/01093 , H01L2924/0132 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , Y10S148/012 , Y10S438/974 , Y10T156/10 , Y10T156/1043 , H01L2924/01014 , H01L2924/01015 , H01L2924/01049 , H01L2924/01031 , H01L2924/3512 , H01L2924/00
摘要： A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. One etching process The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and SiO2. The surfaces to be bonded are polished to a high degree of smoothness and planarity. VSE may use reactive ion etching or wet etching to slightly etch the surfaces being bonded. The surface roughness and planarity are not degraded and may be enhanced by the VSE process. The etched surfaces may be rinsed in solutions such as ammonium hydroxide or ammonium fluoride to promote the formation of desired bonding species on the surfaces.

5. 发明申请

US20030141502A1 Method of epitaxial-like wafer bonding at low temperature and bonded structure 有权
标题翻译：低温外延态晶片接合方法及结合结构
公开(公告)号：US20030141502A1
公开(公告)日：2003-07-31
申请号：US10358141
申请日：2003-02-05
申请人： Ziptronix
发明人： Qin-Yi Tong
IPC分类号： H01L023/02
CPC分类号： H01L21/02052 , H01L21/187 , H01L21/306 , Y10S438/974
摘要： A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-containing plasmas such as a B2H6 plasma. The surface defect regions may also be created by ion implantation, preferably using boron. The surfaces may also be amorphized. The treated surfaces are placed together, thus forming an attached pair at room temperature in ambient air. The bonding energy reaches approximately 400 mJ/m2 at room temperature, 900 mJ/m2 at 150null C., and 1800 mJ/m2 at 250null C. The bulk silicon fracture energy of 2500 mJ/m2 was achieved after annealing at 350-400null C. The release of hydrogen from BnullH complexes and the subsequent absorption of the hydrogen by the plasma induced modified layers on the bonding surfaces at low temperature is most likely responsible for the enhanced bonding energy.
摘要翻译：一种低温下无氧化硅衬底对和其他衬底的焊接工艺。该方法包括改变硅晶片的表面以产生缺陷区域，例如通过等离子体处理待与诸如B2H6等离子体的含硼等离子体接合的表面。表面缺陷区域也可以通过离子注入产生，优选使用硼。表面也可能是非晶化的。将处理过的表面放置在一起，从而在室温下在环境空气中形成附着的对。键合能在室温下达到约400mJ / m 2，150℃时为900mJ / m 2，在250℃下达到1800mJ / m 2。在350℃退火后实现了2500mJ / m 2的体硅裂解能， 400℃。从BH络合物中释放氢气以及随后通过等离子体在低温下在接合表面上引起改性层吸收氢是很有可能造成增强的结合能。

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