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1. 发明申请

US20040136235A1 Magnetic storage element, recording method using the same, and magnetic storage device 失效
标题翻译：磁存储元件，使用其的记录方法和磁存储装置
公开(公告)号：US20040136235A1
公开(公告)日：2004-07-15
申请号：US10713885
申请日：2003-11-14
发明人： Hiroyuki Ohmori
IPC分类号： G11C011/15
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic storage element capable of recording with a small magnetic field and retaining information stably and a recording method thereof, and a magnetic storage device having the magnetic storage element and capable of simplifying a drive circuit thereof are provided. The magnetic storage element comprises a storage layer, a non-magnetic layer and a pinned layer. The. storage layer is composed of directly stacked first magnetic layer mainly composed of a transition metal and second magnetic layer mainly composed of a rare-earth metal; and a magnetization amount of the first magnetic layer is smaller than that of the second magnetic layer at a room temperature. A magnetization state of one direction is recorded by heating and applying a magnetic field to the storage layer, and a magnetization state of the other direction is recorded by making magnetic coupling work between the first magnetic layer and the pinned layer by heating.
摘要翻译：提供能够以小的磁场记录和稳定地保持信息的磁存储元件及其记录方法，以及具有磁存储元件并且能够简化其驱动电路的磁存储装置。磁存储元件包括存储层，非磁性层和钉扎层。的。存储层由主要由过渡金属构成的直接堆叠的第一磁性层和主要由稀土金属组成的第二磁性层组成; 并且在室温下第一磁性层的磁化量小于第二磁性层的磁化量。通过加热并向存储层施加磁场来记录一个方向的磁化状态，并且通过加热在第一磁性层和被钉扎层之间进行磁耦合来记录另一方向的磁化状态。

2. 发明申请

US20040100820A1 Electron spin mechanisms for inducing magnetic-polarization reversal 有权
标题翻译：用于诱导磁极化反转的电子自旋机制
公开(公告)号：US20040100820A1
公开(公告)日：2004-05-27
申请号：US10717954
申请日：2003-11-19
发明人： Eric C. Hannah , Michael A. Brown
IPC分类号： G11C011/15
CPC分类号： H01F10/1936 , B82Y25/00 , H01F10/3254 , H01L43/08 , Y10T428/24843
摘要： An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-parallel to the LMC layer are injected via the energy-gap, to change the M-ESP of the LMC layer. A non-magnetic material is in electrical communication with the LMC layer and provides a spin-balanced source of current to the LMC layer, responsive to the injection of spin-polarized electrons into the LMC layer.
摘要翻译：一种装置包括具有多数电子自旋极化（M-ESP）的材料的低磁矫顽力层（LMC层），与LMC层耦合的能隙，其中具有电子的自旋极化电子流通过能隙注入反平行于LMC层的极化极化，以改变LMC层的M-ESP。响应于将自旋极化电子注入LMC层，非磁性材料与LMC层电连通并且向LMC层提供自旋平衡电流源。

3. 发明申请

US20040100819A1 Memory device capable of stable data writing 失效
标题翻译：能够稳定写入数据的存储器件
公开(公告)号：US20040100819A1
公开(公告)日：2004-05-27
申请号：US10440157
申请日：2003-05-19
申请人： RENESAS TECHNOLOGY CORP.
发明人： Hideto Hidaka
IPC分类号： G11C011/15
CPC分类号： G11C11/15
摘要： A memory device according to the present invention includes a memory cell array including a plurality of memory cells arranged therein, the memory cell array being divided into a plurality of regions each selectable independently of the others as an object for data writing, and further includes a plurality of current supply sections provided correspondingly to the plurality of regions, respectively. Each of the plurality of current supply sections, when a corresponding region of the plurality of regions is selected as an object for data writing, is activated to supply a data write current to the corresponding region and each of the plurality of regions includes a plurality of write select lines provided correspondingly to predetermined units of the plurality of memory cells. The plurality of write select lines are selectively supplied with the data write current from a corresponding one of the plurality of current supply sections.
摘要翻译：根据本发明的存储器件包括：存储单元阵列，其包括布置在其中的多个存储单元，所述存储单元阵列被划分为多个区域，每个区域可独立于其它区域选择，作为用于数据写入的对象，并且还包括：分别对应于多个区域设置的多个电流供应部分。当多个区域中的相应区域被选择作为数据写入的对象时，多个电流供应部分中的每一个被激活以向对应的区域提供数据写入电流，并且多个区域中的每一个包括多个对应于多个存储器单元中的预定单元提供写入选择线。多个写入选择线被选择性地从多个电流供给部中的相应一个提供数据写入电流。

4. 发明申请

US20040085811A1 Method for recording in a nonvolatile solid-state magnetic memory 审中-公开
标题翻译：用于记录在非易失性固态磁存储器中的方法
公开(公告)号：US20040085811A1
公开(公告)日：2004-05-06
申请号：US10619580
申请日：2003-07-16
申请人： Tohoku University
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
IPC分类号： G11C011/15
CPC分类号： G11C11/14
摘要： On a given substrate are successively formed a buffer layer, a recording layer made of carrier induced ferromagnetic material, a metallic electrode layer via an insulating layer, to complete a nonvolatile solid-state magnetic memory as an electric field effect transistor. For recording, a first electric field is applied to the recording layer via the metallic electrode layer under a given external magnetic field, and then, a second electric field is applied to the recording layer via the metallic electrode layer so that the hole carrier concentration of the recording layer can be reduced lower than at the application of the first electric field, thereby to invert the magnetization of the recording layer and thus, realize recording operation for the recording layer.
摘要翻译：在给定的衬底上依次形成缓冲层，由载体诱导的铁磁材料制成的记录层，通过绝缘层形成金属电极层，以完成作为电场效应晶体管的非易失性固态磁存储器。为了记录，在给定的外部磁场下，经由金属电极层将第一电场施加到记录层，然后经由金属电极层将第二电场施加到记录层，使得空穴载流子浓度可以将记录层减小到比施加第一电场时低的记录层，从而反转记录层的磁化，从而实现记录层的记录操作。

5. 发明申请

US20040052006A1 Magnetoresistance element and magnetoresistance storage element and magnetic memory 失效
标题翻译：磁电阻元件和磁阻存储元件和磁存储器
公开(公告)号：US20040052006A1
公开(公告)日：2004-03-18
申请号：US10470670
申请日：2003-07-29
发明人： Akihiro Odagawa , Masayoshi Hiramoto , Nozomu Matsukawa , Masahiro Deguchi
IPC分类号： G11B005/39 , G11C011/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , G11C11/16 , G11C11/161 , H01F10/324 , H01F10/3254 , H01L43/08 , Y10S257/903 , Y10S257/904
摘要： A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.
摘要翻译：一种磁电阻元件，其中第一导电体形成为几乎接触与第一铁磁层的非磁性层相对的表面的中心，所述第一铁磁层的形成为与第二铁磁层一起夹在中间，非磁性层层和形成为至少覆盖第一铁磁层的侧表面的绝缘体，并且非磁性层形成为覆盖第一铁磁层的表面的周边边缘，由此可以防止漏电流从第一导电体沿着第一铁磁层，非磁性层和第二铁磁层的侧面流向第二导电体，并且使从第一导电体流出的偏置电流均匀第二导体，从而限制诸如MR值和结电阻的磁阻特性的变化。

6. 发明申请

US20040042260A1 Write current shunting compensation 有权
公开(公告)号：US20040042260A1
公开(公告)日：2004-03-04
申请号：US10231041
申请日：2002-08-30
发明人： James G. Deak
IPC分类号： G11C011/00 , G11C011/14 , G11C011/15
CPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) is compensated for write current shunting by varying the bit size of each MRAM cell with position along the write line. The MRAM includes a plurality of magnetic tunnel junction memory cells arranged in an array of columns and rows. The width of each memory cell increases along a write line to compensate for write current shunting.

7. 发明申请

US20040042129A1 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device 有权
标题翻译：磁阻效应元件，磁存储器件以及磁阻效应元件和磁存储器件的制造方法
公开(公告)号：US20040042129A1
公开(公告)日：2004-03-04
申请号：US10457492
申请日：2003-06-09
发明人： Tetsuya Mizuguchi , Masanori Hosomi , Kazuhiro Ohba , Kazuhiro Beesho , Yutaka Higo , Tetsuya Yamamoto , Takeyuki Sone , Hiroshi Kano
IPC分类号： G11B005/39 , G11C011/15
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/15 , H01F10/3204 , H01F10/324 , H01F10/3254 , H01F41/302 , H01L27/228 , Y10T29/49034
摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.
摘要翻译：磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁存储设备。

8. 发明申请

US20040012996A1 MEMORY SYSTEM 失效
标题翻译：记忆系统
公开(公告)号：US20040012996A1
公开(公告)日：2004-01-22
申请号：US10318097
申请日：2002-12-13
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA , MITSUBISHI ELECTRIC ENGINEERING Co., Ltd.
发明人： Hiroaki Tanizaki
IPC分类号： G11C011/15
CPC分类号： G11C29/12005 , G11C5/147 , G11C11/16 , G11C11/5642 , G11C29/12 , G11C2211/5634
摘要： A memory system that generates a reference voltage unaffected by supply voltage variations and is suitable for performing burn-in test is attainable by employing the following configuration. For example, in an MRAM containing a TMR element (Rij) and an N channel MOS transistor (Mij), as memory element, there is disposed a switching circuit (SW1) capable of switching between the state of applying a reference voltage (VrefN) to a memory element and the state of applying a reference voltage (VrefB) for burn-in test having a larger value than the reference voltage (VrefN) to the memory element. At the time of burn-in test, instead of the reference voltage (VrefN) for normal read operation, the reference voltage (VrefB) for burn-in test can be applied via a sense circuit (SC) to the memory element, by applying mode change signals (MODE1 to MODEn) from the exterior and operating the switching circuit (SW1) via a decode circuit (TD).
摘要翻译：产生不受电源电压变化影响的参考电压并且适用于执行老化测试的存储器系统可以通过采用以下配置来实现。例如，在包含TMR元件（Rij）和N沟道MOS晶体管（Mij）的MRAM中，作为存储元件，设置有能够在施加基准电压（VrefN）的状态之间切换的开关电路（SW1）存储元件和向存储元件施加具有比参考电压（VrefN）大的值的用于老化测试的参考电压（VrefB）的状态。在老化测试时，代替正常读取操作的参考电压（VrefN），用于老化测试的参考电压（VrefB）可以通过感测电路（SC）施加到存储元件，通过应用模式改变信号（MODE1〜MODEn），经由解码电路（TD）操作开关电路（SW1）。

9. 发明申请

US20030235074A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20030235074A1
公开(公告)日：2003-12-25
申请号：US10176715
申请日：2002-06-21
发明人： Darrel R. Bloomquist , Judy Bloomquist
IPC分类号： G11C011/15
CPC分类号： G11C11/15
摘要： A magnetic memory device has a plurality of write lines and a plurality of memory cells. Each of the plurality of memory cells are operatively positioned between a corresponding pair of the plurality of write lines. Each of the plurality of memory cells has a sense layer and a reference layer separated by an insulating layer. The reference layer of each of the plurality of memory cells includes a high coercivity permanent magnet.
摘要翻译：磁存储器件具有多个写入线和多个存储单元。多个存储单元中的每一个可操作地位于相应的一对多条写入线之间。多个存储单元中的每一个具有由绝缘层分隔开的感测层和参考层。多个存储单元中的每一个的参考层包括高矫顽力永磁体。

10. 发明申请

US20030227795A1 Hybrid MRAM array structure and operation 有权
标题翻译：混合MRAM阵列结构和操作
公开(公告)号：US20030227795A1
公开(公告)日：2003-12-11
申请号：US10166363
申请日：2002-06-11
发明人： Mirmajid Seyyedy , Glen Hush
IPC分类号： G11C011/15
CPC分类号： G11C11/1653 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C2213/71
摘要： This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor 16 is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a nullZnull axis direction.
摘要翻译：本发明涉及MRAM技术和MRAM阵列体系结构的新变型，其中包含了来自交叉点和1T-1MTJ架构的某些优点。通过组合这些布局的某些特性，可以利用1T-1MTJ架构的快速读取时间和更高的信噪比以及交叉点架构的更高的封装密度。单个访问晶体管16用于读取在“Z”轴方向上布置的多个MRAM阵列层中可以彼此垂直堆叠的列的段中的多个MRAM单元。

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