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1. 发明申请

US20040233712A1 Magnetic storage cell 有权
标题翻译：磁存储单元
公开(公告)号：US20040233712A1
公开(公告)日：2004-11-25
申请号：US10701319
申请日：2003-11-04
发明人： Krish Mani
IPC分类号： G11C011/14
CPC分类号： G11C11/16
摘要： Disclosed herein are different embodiments of a magnetic memory cell. This magnetic memory cell includes at least two conductive lines to carry current and a magnetic element disposed between the conductive lines. The current through the conductive lines induces a magnetic field. The design is such that the magnetic element is directly accessible.
摘要翻译：这里公开的是磁存储单元的不同实施例。该磁存储单元包括至少两条用于承载电流的导线和设置在导线之间的磁性元件。通过导线的电流引起磁场。该设计使得磁性元件可以直接接近。

2. 发明申请

US20040184315A1 Thin film magnetic memory device provided with program element 失效
标题翻译：提供程序元件的薄膜磁存储器件
公开(公告)号：US20040184315A1
公开(公告)日：2004-09-23
申请号：US10623565
申请日：2003-07-22
申请人： RENESAS TECHNOLOGY CORP.
发明人： Hideto Hidaka
IPC分类号： G11C011/14
CPC分类号： G11C11/16 , G11C11/15 , G11C29/44 , G11C29/785
摘要： A program element has a magnetic layer electrically connected between first and second nodes. At least a portion of the magnetic layer forms a link portion designed to be blown with external laser irradiation. The magnetic layer is provided in the same layer as and with the same structure as a tunneling magneto-resistance element in an MTJ memory cell. An electrical contact between the magnetic layer and respective one of the first and second nodes has the same structure as the electrical contact between the tunneling magneto-resistance element and an interconnection provided in the same metal interconnection layer as respective one of the first and second nodes in the MTJ memory cell.
摘要翻译：程序元件具有电连接在第一和第二节点之间的磁性层。磁性层的至少一部分形成设计成被外部激光照射吹制的连接部分。磁性层设置在与MTJ存储单元中的隧道磁阻元件相同的层中，具有相同的结构。磁性层与第一和第二节点中的相应一个之间的电接触具有与隧道磁阻元件与设置在与第一和第二节点中的相应金属互连层相同的金属互连层中的互连之间的电接触相同的结构在MTJ存储单元中。

3. 发明申请

US20040165426A1 Magnetic memory array, method for recording in a magnetic memory array and method for reading out from a magnetic memory array 有权
标题翻译：磁存储器阵列，用于记录在磁存储器阵列中的方法和用于从磁存储器阵列读出的方法
公开(公告)号：US20040165426A1
公开(公告)日：2004-08-26
申请号：US10724207
申请日：2003-12-01
申请人： OSAKA UNIVERSITY
发明人： Masahiko Yamamoto , Ryoichi Nakatani , Yasushi Endo
IPC分类号： G11C011/14
CPC分类号： G11C11/16
摘要： A plurality of magnetic memories with respective ring-shaped magnetic layers therein are prepared. The magnetic layers have respective notches formed by partially cutting out the peripheries thereof in circular arc shape. The magnetic memories are arranged in plane so that the surfaces of the notches are parallel to one another.
摘要翻译：制备其中具有各个环形磁性层的多个磁存储器。磁性层具有通过将其周边部分地切割成圆弧形而形成的各自的凹口。磁性存储器布置在平面中，使得凹口的表面彼此平行。

4. 发明申请

US20040156232A1 Magnetic memory 有权
公开(公告)号：US20040156232A1
公开(公告)日：2004-08-12
申请号：US10769757
申请日：2004-02-03
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
IPC分类号： G11C011/14
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

5. 发明申请

US20040125648A1 Magnetic random access memory and data read method thereof 失效
标题翻译：磁性随机存取存储器及其数据读取方法
公开(公告)号：US20040125648A1
公开(公告)日：2004-07-01
申请号：US10431369
申请日：2003-05-08
发明人： Yoshihisa Iwata
IPC分类号： G11C011/14 , G11C008/00
CPC分类号： G11C11/15
摘要： A magnetic random access memory having a memory cell array in which one block is formed from a plurality of magnetoresistive elements using a magnetoresistive effect, and a plurality of blocks are arranged in row and column directions, includes a plurality of first magnetoresistive elements arranged in a first block, a plurality of first word lines each of which is independently connected to one terminal of a corresponding one of the first magnetoresistive elements and runs in the row direction, a first read sub bit line commonly connected to the other terminal of each of the first magnetoresistive elements, a first block select switch whose first current path has one end connected to one end of the first read sub bit line, and a first read main bit line which is connected to the other end of the first current path and runs in the column direction.
摘要翻译：一种具有存储单元阵列的磁性随机存取存储器，其中使用磁阻效应从多个磁阻元件形成一个块，并且多个块被排列成行和列方向，包括多个第一磁阻元件，其布置在第一块，多个第一字线，每个第一字线独立地连接到相应的一个第一磁阻元件的一个端子并在行方向上延伸;第一读取子位线，共同连接到每个的另一个端子第一磁阻元件，第一块选择开关，其第一电流路径的一端连接到第一读取子位线的一端，第一读取主位线连接到第一电流路径的另一端并在其中运行列方向。

6. 发明申请

US20040120184A1 Synthetic antiferromagnetic structure for magnetoelectronic devices 失效
标题翻译：用于磁电子器件的合成反铁磁结构
公开(公告)号：US20040120184A1
公开(公告)日：2004-06-24
申请号：US10322979
申请日：2002-12-18
发明人： Jason Allen Janesky , Bradley N. Engel , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： G11C011/14
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
摘要翻译：可以有利地用于诸如磁阻存储器单元的磁电子器件中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层和分离两个铁磁层的反铁磁耦合层。 SAF自由层通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加器件性能。

7. 发明申请

US20040109347A1 Highly nonlinear magnetic tunnel junctions for dense magnetic random access memories 失效
标题翻译：用于密集磁随机存取存储器的高度非线性磁隧道结
公开(公告)号：US20040109347A1
公开(公告)日：2004-06-10
申请号：US10316141
申请日：2002-12-10
申请人： International Business Machines Corporation
发明人： John Kenneth DeBrosse , Yu Lu , Stuart Stephen Papworth Parkin
IPC分类号： G11C011/14 , H01L021/00
CPC分类号： H01L27/222 , G11C11/16
摘要： MRAMs are provided with cells offering low current leakage for partially selected cells. MRAM cells are made with magnetic tunnel junctions having barriers that meet predetermined low barrier heights and predetermined thicknesses. The barrier heights are preferably about 1.5 eV or less. The predetermined thicknesses are calculated to meet power and speed requirements. The predetermined low barrier heights and predetermined thicknesses modify a nonlinear term relating current through to voltage across the magnetic tunnel junction. The modification of the nonlinear term also modifies the amount of current that flows through a magnetic tunnel junction at various voltages. At low voltages, current through the magnetic tunnel junction will be disproportionately lower than current through a conventional magnetic tunnel junction. This decreases leakage current through partially selected MRAM cells and power. At higher voltages, current through the magnetic tunnel junction is adequate for a wide variety of power and speed applications.
摘要翻译： MRAM提供有对部分选择的单元提供低电流泄漏的单元。 MRAM单元由具有满足预定的低屏障高度和预定厚度的屏障的磁性隧道结制成。阻挡高度优选为约1.5eV以下。计算预定厚度以满足功率和速度要求。预定的低阻挡高度和预定厚度修改了跨越磁性隧道结的电流跨越电压的非线性项。非线性项的修改还修改了在各种电压下流过磁性隧道结的电流量。在低电压下，通过磁性隧道结的电流将比通过常规磁性隧道结的电流不成比例地低。这通过部分选择的MRAM单元和功率降低漏电流。在较高的电压下，通过磁性隧道结的电流适用于各种功率和速度应用。

8. 发明申请

US20040042260A1 Write current shunting compensation 有权
公开(公告)号：US20040042260A1
公开(公告)日：2004-03-04
申请号：US10231041
申请日：2002-08-30
发明人： James G. Deak
IPC分类号： G11C011/00 , G11C011/14 , G11C011/15
CPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) is compensated for write current shunting by varying the bit size of each MRAM cell with position along the write line. The MRAM includes a plurality of magnetic tunnel junction memory cells arranged in an array of columns and rows. The width of each memory cell increases along a write line to compensate for write current shunting.

9. 发明申请

US20030214835A1 STACKED 1T-NMTJ MRAM STRUCTURE 有权
标题翻译：堆叠1T-NMTJ MRAM结构
公开(公告)号：US20030214835A1
公开(公告)日：2003-11-20
申请号：US10146113
申请日：2002-05-16
发明人： Hasan Nejad , Mirmajid Seyyedy
IPC分类号： G11C011/00 , G11C011/14
CPC分类号： G11C11/16 , B82Y10/00 , G11C11/15 , H01L27/228
摘要： This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1M architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transis is used to read multiple MRAM cells, which can be stacked vertically above one anot a plurality of MRAM array layers arranged in a nullZnull axis direction.
摘要翻译：本发明涉及MRAM技术以及MRAM阵列体系结构的新变体，其中包含了来自交叉点和1T-1M架构的某些优点。通过组合这些布局的某些特性，可以利用1T-1MTJ架构的快速读取时间和更高的信噪比以及交叉点架构的更高的封装密度。单个访问转换用于读取可以沿“Z”轴方向布置的多个MRAM阵列层垂直堆叠的多个MRAM单元。

10. 发明申请

US20030174537A1 Magnetic memory using reverse magnetic field to improve half-select margin 有权
公开(公告)号：US20030174537A1
公开(公告)日：2003-09-18
申请号：US10090246
申请日：2002-03-04
发明人： Darrel .R. Bloomquist , Manoj K. Bhattacharyya , Thomas C. Anthony
IPC分类号： G11C011/14
CPC分类号： G11C11/15
摘要： A magnetic memory includes a circuit configured to apply a reverse magnetic field to one or more half-selected magnetic memory cells to improve half-select margin in the magnetic memory.

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