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1. 发明申请

US20030003704A1 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure 失效
标题翻译：锌闪光体型CrSb化合物，其制造方法和多层结构
公开(公告)号：US20030003704A1
公开(公告)日：2003-01-02
申请号：US10172999
申请日：2002-06-18
申请人： TOHOKU UNIVERSITY
发明人： Hideo Ohno , Fumihiro Matsukura
IPC分类号： H01L021/28 , H01L021/3205
CPC分类号： B82Y25/00 , C30B23/02 , C30B29/52 , H01F1/404 , H01F10/3213
摘要： An underlayer made of a III-V semiconductor compound is formed on a given substrate, and a CrSb compound is epitaxially grown on the underlayer by means of MBE method to fabricate a zinc blende type CrSb compound.
摘要翻译：在给定的基板上形成由III-V族半导体化合物制成的底层，并通过MBE法在底层上外延生长CrSb化合物，以制备闪锌矿型CrSb化合物。

2. 发明申请

US20040085827A1 Nonvolatile solid-state magnetic memory, method for controlling coercive force of nonvolatile solid-state magnetic memory, and method for recording in nonvolatile solid-state magnetic memory 审中-公开
标题翻译：非易失性固态磁存储器，非易失性固态磁存储器的矫顽力控制方法及非易失性固态磁存储器的记录方法
公开(公告)号：US20040085827A1
公开(公告)日：2004-05-06
申请号：US10619457
申请日：2003-07-16
申请人： TOHOKU UNIVERSITY
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
IPC分类号： G11C029/00
CPC分类号： H01L43/08 , G11C11/16
摘要： On a given substrate are successively formed a buffer layer, a recording layer made of carrier induced ferromagnetic material, a metallic electrode layer via an insulating layer, to complete a nonvolatile solid-state magnetic memory as an electric field effect transistor. For recording, a given electric field is applied to the recording layer via the metallic electrode layer so that the hole carrier concentration can be reduced to decrease the coercive force of the recording layer and thus, perform recording operation through the magnetic inversion of the recording layer with a relatively small external magnetic field.
摘要翻译：在给定的衬底上依次形成缓冲层，由载体诱导的铁磁材料制成的记录层，通过绝缘层形成金属电极层，以完成作为电场效应晶体管的非易失性固态磁存储器。为了记录，通过金属电极层向记录层施加给定的电场，从而可以减小空穴载流子浓度以降低记录层的矫顽力，从而通过记录层的磁性反转进行记录操作具有相对较小的外部磁场。

3. 发明申请

US20030122148A1 Spin filter 失效
标题翻译：旋转过滤器
公开(公告)号：US20030122148A1
公开(公告)日：2003-07-03
申请号：US10291687
申请日：2002-11-12
申请人： Tohoku University
发明人： Hideo Ohno , Keita Ohtani
IPC分类号： H01L033/00
CPC分类号： G06N99/002 , B82Y10/00 , B82Y25/00 , H01F1/402 , H01F10/3213 , H01F41/325
摘要： A spin filter is composed of a first magnetic semiconductor multi-quantum well structure, a second magnetic semiconductor multi-quantum well structure and a non-magnetic semiconductor quantum well structure which is located between the first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure. The first magnetic semiconductor multi-quantum well structure and the second magnetic semiconductor multi-quantum well structure are split in spin state. Carriers in down-spin state are penetrated through the first magnetic semiconductor multi-quantum well structure and carriers in up-spin state are penetrated through the second magnetic semiconductor multi-quantum well structure.
摘要翻译：旋转滤波器由第一磁半导体多量子阱结构，第二磁半导体多量子阱结构和非磁性半量子阱结构构成，该结构位于第一磁半导体多量子阱结构和第二磁半导体多量子阱结构之间磁性半导体多量子阱结构。第一磁半导体多量子阱结构和第二磁半导体多量子阱结构在自旋状态下分裂。穿过第一磁半导体多量子阱结构的向下自旋状态的载流子穿过第二磁性半导体多量子阱结构，并且向上旋转状态的载流子穿过第二磁性半导体多量子阱结构。

4. 发明申请

US20010031547A1 Method of generating spin-polarized conduction electron and semiconductor device 失效
标题翻译：产生自旋极化导电电子和半导体器件的方法
公开(公告)号：US20010031547A1
公开(公告)日：2001-10-18
申请号：US09799722
申请日：2001-03-07
申请人： TOHOKU UNIVERSITY
发明人： Hideo Ohno , Fumihiro Matsukura
IPC分类号： H01L029/82
CPC分类号： B82Y15/00 , B82Y25/00 , H01F10/3213 , H01F10/3254 , H01L29/66984
摘要： A semiconductor device for generating spin-polarized conduction electrons including a ferromagnetic semiconductor layer and a non-magnetic semiconductor layer having a band alignment of Type II with respect to the ferromagnetic semiconductor, said ferromagnetic semiconductor layer and non-magnetic semiconductor layer being connected together directly or with interposing therebetween another non-magnetic semiconductor layer or energy barrier layer such that a spin splitting of a conduction band of the non-magnetic semiconductor layer is induced by a spontaneous spin splitting of a valence band of the ferromagnetic semiconductor layer, and spin-polarized conduction electrons are generated in the non-magnetic semiconductor layer by the spin splitting of the conduction band of the non-magnetic semiconductor layer.
摘要翻译：一种半导体器件，用于产生包括铁磁半导体层和相对于铁磁半导体的II型带对准的非磁性半导体层的自旋极化传导电子，所述铁磁半导体层和非磁性半导体层直接连接在一起或者介于另一非磁性半导体层或能量阻挡层之间，使得非磁性半导体层的导带的自旋分裂是由铁磁半导体层的价带的自发旋转分裂引起的，通过非磁性半导体层的导带的自旋分裂，在非磁性半导体层中产生极化的导电电子。

5. 发明申请

US20040085811A1 Method for recording in a nonvolatile solid-state magnetic memory 审中-公开
标题翻译：用于记录在非易失性固态磁存储器中的方法
公开(公告)号：US20040085811A1
公开(公告)日：2004-05-06
申请号：US10619580
申请日：2003-07-16
申请人： Tohoku University
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
IPC分类号： G11C011/15
CPC分类号： G11C11/14
摘要： On a given substrate are successively formed a buffer layer, a recording layer made of carrier induced ferromagnetic material, a metallic electrode layer via an insulating layer, to complete a nonvolatile solid-state magnetic memory as an electric field effect transistor. For recording, a first electric field is applied to the recording layer via the metallic electrode layer under a given external magnetic field, and then, a second electric field is applied to the recording layer via the metallic electrode layer so that the hole carrier concentration of the recording layer can be reduced lower than at the application of the first electric field, thereby to invert the magnetization of the recording layer and thus, realize recording operation for the recording layer.
摘要翻译：在给定的衬底上依次形成缓冲层，由载体诱导的铁磁材料制成的记录层，通过绝缘层形成金属电极层，以完成作为电场效应晶体管的非易失性固态磁存储器。为了记录，在给定的外部磁场下，经由金属电极层将第一电场施加到记录层，然后经由金属电极层将第二电场施加到记录层，使得空穴载流子浓度可以将记录层减小到比施加第一电场时低的记录层，从而反转记录层的磁化，从而实现记录层的记录操作。

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