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1. 发明申请

US20040062938A1 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US20040062938A1
公开(公告)日：2004-04-01
申请号：US10653098
申请日：2003-09-03
申请人： Kabushiki Kaisha Toshiba
发明人： Tadashi Kai , Shigeki Takahashi , Tomosasa Ueda , Tatsuya Kishi , Yoshiaki Saito
IPC分类号： B32B003/00
CPC分类号： G11C11/15 , G11C11/16 , Y10T428/24917
摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.
摘要翻译：提供了固定有磁化方向的第一参考层和容易磁化轴方向的长度比硬磁化轴方向的长度长的主体的存储层，以及在硬磁化轴方向上设置在主体的中心部的突出部，存储层的磁化方向根据外部磁场而变化。

2. 发明申请

US20020130339A1 Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus 失效
标题翻译：磁阻效应装置及其制造方法，磁存储装置，个人数字助理和磁再现头以及磁信息重放装置
公开(公告)号：US20020130339A1
公开(公告)日：2002-09-19
申请号：US10097571
申请日：2002-03-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
IPC分类号： H01L029/76
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01L43/08 , Y10S428/90 , Y10T29/49043 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052 , Y10T428/24942 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： Magnetoresistance effect devices for attaining magnetically stability and for reducing a switching magnetic field. One of the ferromagnetic layers of the magnetoresistance effect device has a plane shape in which a width of an end portions is wider than a center portion sandwiched by two end portions. The end portions are not symmetrical with respect to an easy magnetization axis or longer axis of the plane shape of ferromagnetic material layer, but are substantially rotationally symmetrical with a center of the plane shape as a pivot. The plane shape may have an S-shape where its magnetic domain is stabilized and the switching magnetic field is reduced. The manufacturing method uses two linear mask patterns intersecting with each other to form sharp corners of a ferromagnetic tunnel junction. An electron beam (EB) drawing may be used to form the S-shape plane. The magnetoresistance effect devices may be used in a magnetic memory apparatus, such as a random access memory, a personal digital assistance, a magnetic reproducing head, and a magnetic information reproducing apparatus.
摘要翻译：用于获得磁稳定性并用于减小开关磁场的磁阻效应器件。磁阻效应器件的铁磁层之一具有端部的宽度比夹在两个端部的中心部分宽的平面形状。端部相对于铁磁材料层的平面形状的易磁化轴或长轴不对称，但是以平面形状的中心作为枢轴基本上是旋转对称的。平面形状可以具有其磁畴稳定并且开关磁场减小的S形。该制造方法使用彼此相交的两个线性掩模图案来形成铁磁隧道结的尖角。可以使用电子束（EB）图来形成S形平面。磁阻效应器件可以用在诸如随机存取存储器，个人数字助听器，磁再现头和磁信息再现设备之类的磁存储设备中。

3. 发明申请

US20040175596A1 Magnetoresistive element and magnetic memory device 有权
标题翻译：磁阻元件和磁存储器件
公开(公告)号：US20040175596A1
公开(公告)日：2004-09-09
申请号：US10797136
申请日：2004-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
IPC分类号： G11B005/33
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a NinullFe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
摘要翻译：磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。隧道电流在第一铁磁层和第三铁磁层之间流动。

4. 发明申请

US20030197984A1 Magnetoresistive element and magnetic memory device 有权
公开(公告)号：US20030197984A1
公开(公告)日：2003-10-23
申请号：US10443830
申请日：2003-05-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
IPC分类号： G11B005/39 , G11C011/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a NinullFe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

5. 发明申请

US20040156232A1 Magnetic memory 有权
公开(公告)号：US20040156232A1
公开(公告)日：2004-08-12
申请号：US10769757
申请日：2004-02-03
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
IPC分类号： G11C011/14
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

6. 发明申请

US20030186552A1 Method for producing magnetic memory device 失效
标题翻译：磁存储器件的制造方法
公开(公告)号：US20030186552A1
公开(公告)日：2003-10-02
申请号：US10396435
申请日：2003-03-26
申请人： Kabushiki Kaisha Toshiba
发明人： Minoru Amano , Tatsuya Kishi , Yoshiaki Saito , Tomomasa Ueda , Hiroaki Yoda
IPC分类号： H01L021/311
CPC分类号： G11C11/15 , Y10T29/49021
摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.
摘要翻译：提供了一种对于写入线具有小的开关电流并且其变化小的磁存储器件。一种制造这种磁存储器件的方法包括：形成磁阻效应元件; 形成第一绝缘膜以覆盖磁阻效应元件; 形成涂膜以覆盖第一绝缘膜; 暴露磁阻效应元件的顶面; 在磁阻效应元件上形成上部写入线; 通过去除一部分或全部涂膜，将第一绝缘膜暴露在磁阻效应元件的侧面上; 以及形成轭结构件，以便覆盖上部书写线的至少一个侧面部分，以便与该磁阻效应元件侧面上暴露的第一绝缘膜接触。

7. 发明申请

US20030156476A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20030156476A1
公开(公告)日：2003-08-21
申请号：US10345188
申请日：2003-01-16
申请人： Kabushiki Kaisha Toshiba
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C007/00
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
摘要翻译：磁存储器包括：具有磁记录层的磁阻效应元件; 在磁阻效应元件上或其下方沿第一方向延伸的第一写入布线，布线的轴向横截面的重心与重心处的厚度中心分开，并且重心偏向磁阻效应元件; 以及写入电路，其被配置为使电流通过所述第一写入布线，以便通过所述电流产生的磁场将信息记录在所述磁记录层中。

8. 发明申请

US20030062975A1 Magnetoresistive effect element, magnetic memory and magnetic head 有权
标题翻译：磁阻效应元件，磁记忆体和磁头
公开(公告)号：US20030062975A1
公开(公告)日：2003-04-03
申请号：US10233505
申请日：2002-09-04
申请人： Kabushiki Kaisha Toshiba
发明人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
IPC分类号： H01H067/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.
摘要翻译：隧道结型的磁阻效应元件包括磁性多层膜（1），铁磁膜（3）和中间绝缘膜（2），使得电流在磁性多层膜和铁磁膜之间流动，隧穿通过绝缘膜。磁性多层膜包括插入第一和第二铁磁层之间的第一铁磁层，第二铁磁层和反铁磁层。

9. 发明申请

US20020191451A1 Magnetoresistance effect device 失效
标题翻译：磁阻效应器
公开(公告)号：US20020191451A1
公开(公告)日：2002-12-19
申请号：US10102944
申请日：2002-03-22
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Kentaro Nakajima , Masayuki Sagoi
IPC分类号： H01L031/119
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/3272 , H01L43/08
摘要： A magnetoresistance effect devices having a magnetization free layer free to rotate in an applied magnetic field. The magnetization free layer may include first and second ferromagnetic material layers with a nonmagnetic material layer disposed between the two ferromagnetic material layers. Those ferromagnetic materials are antiferromagnetically coupled with each other at a magnetic coupling field J (null3 nullkOenullnullJ
摘要翻译：具有在施加的磁场中自由旋转的无磁化层的磁阻效应器件。无磁化层可以包括第一和第二铁磁材料层，其中非磁性材料层设置在两个铁磁材料层之间。这些铁磁材料在磁耦合场J（-3 [kOe] = J <0 [kOe]）处相互反铁磁耦合或者铁磁耦合。或者，无磁化膜包括第一铁磁材料层，第一铁磁材料层包括具有第一磁化的中心区域和具有与第一磁化强度不同的第二磁化强度的边缘区域和第二铁磁材料层，第二铁磁材料层包括具有与第一磁化平行的第三磁化强度的中心区域磁化和边缘区具有不同于第三磁化的第四磁化。在另一个实施例中，在第一铁磁材料层和第一非磁性材料耦合层之间的界面处的粗糙度或第一第二铁磁材料层与第一非磁性材料耦合层之间的界面的粗糙度大于2埃。此外，无磁化层可以由铁磁材料部分铁磁材料部分形成，或者是非磁性材料层和具有不均匀膜厚度的第一铁磁材料层。

10. 发明申请

US20040257866A1 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US20040257866A1
公开(公告)日：2004-12-23
申请号：US10893915
申请日：2004-07-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： G11C011/14
CPC分类号： G11C11/15
摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.
摘要翻译：在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。当选择对应的第一和第二布线时，选择每个存储单元。每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端，端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

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