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1. 发明授权

US06254685B1 Chemical vapor deposition trap with tapered inlet 失效
标题翻译：具有锥形入口的化学气相沉积阱
公开(公告)号：US06254685B1
公开(公告)日：2001-07-03
申请号：US08181936
申请日：1994-01-18
申请人： Donald Kraft , Emmett M. Howard, Jr. , R. Scott Hibben
发明人： Donald Kraft , Emmett M. Howard, Jr. , R. Scott Hibben
IPC分类号： C23C1601
CPC分类号： C23C16/4412
摘要： A trap filter chamber (16) removes chemical by-products created during the manufacturing process of semiconductor wafers in a low pressure chemical vapor deposition reactor (12). A vapor containing the process by-products is discharged from the reactor to the trap chamber (16) by way of connecting pipe (14). The vapors are drawn through the trap chamber by a vacuum pump (20). The connecting pipe at the inlet of the trap chamber has a tapered diameter section (28, 30) such that its outlet is larger in diameter than its inlet. The tapered section gradually and linearly reduces the pressure from the reactor to the inlet of the trap filter chamber thereby substantially reducing particulate by-product build-up at the inlet to the trap filter caused by temperature-pressure related precipitation.
摘要翻译：捕集过滤器室（16）去除在低压化学气相沉积反应器（12）中在半导体晶片的制造过程中产生的化学副产物。含有过程副产物的蒸气通过连接管（14）从反应器排放到捕集室（16）。蒸汽通过真空泵（20）从捕集室中抽出。捕集器入口处的连接管具有锥形直径部分（28,30），使得其出口直径大于其入口。锥形部分逐渐和线性地减小从反应器到陷阱过滤器室的入口的压力，从而基本上减少由与温度有关的沉淀引起的陷阱过滤器入口处的颗粒副产物积聚。

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