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1. 发明公开

EP0308946A2 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness 失效
标题翻译：为生产高品质的外延层的具有均匀密度化学气相沉积装置。
公开(公告)号：EP0308946A2
公开(公告)日：1989-03-29
申请号：EP88115622.8
申请日：1988-09-22
申请人： NEC CORPORATION
发明人： Shishiguchi, Seiichi, c/o NEC Corporation , Toyokawa, Fumitoshi, c/o NEC Corporation , Mikami, Masao, c/o NEC Corporation
IPC分类号： C30B25/14 , C30B25/12
CPC分类号： C30B25/12 , C30B25/14 , Y10S148/006 , Y10S438/935
摘要： A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube (7), the substrate-holder (6) holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means (13) for heating the substrates, a first gas-supply nozzle tube (9) installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube (8) installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes (10) aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.
摘要翻译：一种化学气相沉积设备包括反应管中，在衬底保持器安装在反应管（7）中，在基板保持器（6）保持基板的多个沿垂直方向，在基板的表面上被水平地保持，旋转 - 用于加热基板，第一供气喷嘴管旋转衬底保持器，一个加热装置（13）（9）在反应管垂直安装，具有第一垂直气体的第一气体供给喷嘴管在垂直方向上对齐的第一气体排放孔的多个，并且在反应管垂直安装的第二气体供给喷嘴管（8）的发射线，具有第二垂直气体排放第二气体供给喷嘴管线，第二气体排放孔在垂直方向上排列的多个（10）中，第一气体排放孔的第一气体排放轴与第二气体排放孔中的第二气体的发光轴相交在SUBSTR的第一交叉点吃，第一和第二气体的发光轴的第一交叉正在从基板保持器的旋转中心偏离。

2. 发明授权

EP0308946B1 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness 失效
标题翻译：为生产高品质的外延层的具有均匀密度化学气相沉积装置。
公开(公告)号：EP0308946B1
公开(公告)日：1993-11-24
申请号：EP88115622.8
申请日：1988-09-22
申请人： NEC CORPORATION
发明人： Shishiguchi, Seiichi, c/o NEC Corporation , Toyokawa, Fumitoshi, c/o NEC Corporation , Mikami, Masao, c/o NEC Corporation
IPC分类号： C30B25/14 , C30B25/12
CPC分类号： C30B25/12 , C30B25/14 , Y10S148/006 , Y10S438/935

3. 发明公开

EP0308946A3 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness 失效
标题翻译：用于获得具有均匀膜厚度的高质量外延层的化学蒸气沉积装置
公开(公告)号：EP0308946A3
公开(公告)日：1990-12-12
申请号：EP88115622.8
申请日：1988-09-22
申请人： NEC CORPORATION
发明人： Shishiguchi, Seiichi, c/o NEC Corporation , Toyokawa, Fumitoshi, c/o NEC Corporation , Mikami, Masao, c/o NEC Corporation
IPC分类号： C30B25/14 , C30B25/12
CPC分类号： C30B25/12 , C30B25/14 , Y10S148/006 , Y10S438/935
摘要： A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube (7), the substrate-holder (6) holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means (13) for heating the substrates, a first gas-supply nozzle tube (9) installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube (8) installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes (10) aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.

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