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1. 发明授权

US07148526B1 Germanium MOSFET devices and methods for making same 有权
标题翻译：锗MOSFET器件及其制造方法
公开(公告)号：US07148526B1
公开(公告)日：2006-12-12
申请号：US10348758
申请日：2003-01-23
申请人： Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
发明人： Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
IPC分类号： H01L29/72
CPC分类号： H01L29/7855 , H01L21/823821 , H01L29/42384 , H01L29/7843 , H01L29/78684
摘要： A double gate germanium metal-oxide semiconductor field-effect transistor (MOSFET) includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, and a second gate formed adjacent a second side of the germanium fin opposite the first side. A triple gate MOSFET includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, a second gate formed adjacent a second side of the germanium fin opposite the first side, and a top gate formed on top of the germanium fin. An all-around gate MOSFET includes a germanium fin, a first sidewall gate structure formed adjacent a first side of the germanium fin, a second sidewall gate structure formed adjacent a second side of the germanium fin, and additional gate structures formed on and around the germanium fin.
摘要翻译：双栅极锗金属氧化物半导体场效应晶体管（MOSFET）包括锗翅片，邻近锗翅片的第一侧形成的第一栅极和与第一侧相对的锗翅片第二侧附近形成的第二栅极。三栅极MOSFET包括锗翅片，与锗翅片的第一侧相邻形成的第一栅极，与第一侧相对的锗翅片的第二侧附近形成的第二栅极和形成在锗翅片顶部上的顶栅极。全栅极MOSFET包括锗翅片，邻近锗翅片的第一侧形成的第一侧壁栅极结构，邻近锗翅片的第二侧形成的第二侧壁栅极结构，以及形成在锗翅片上和周围的附近的栅极结构锗鳍

2. 发明授权

US06803631B2 Strained channel finfet 有权
标题翻译：应变通道finfet
公开(公告)号：US06803631B2
公开(公告)日：2004-10-12
申请号：US10349042
申请日：2003-01-23
申请人： Srikanteswara Dakshina-Murthy , Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
发明人： Srikanteswara Dakshina-Murthy , Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
IPC分类号： H01L2701
CPC分类号： H01L29/785 , H01L29/1054 , H01L29/4908 , H01L29/66795 , H01L29/78654 , H01L29/78687
摘要： A semiconductor structure includes a fin and a layer formed on the fin. The fin includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer is formed on the surfaces and includes a second crystalline material. The first crystalline material has a different lattice constant than the second crystalline material to induce tensile strain within the first layer.
摘要翻译：半导体结构包括翅片和形成在翅片上的层。翅片包括具有矩形横截面和多个表面的第一结晶材料。该层形成在表面上并且包括第二结晶材料。第一结晶材料具有与第二结晶材料不同的晶格常数，以在第一层内引起拉伸应变。

3. 发明授权

US07179692B2 Method of manufacturing a semiconductor device having a fin structure 有权
标题翻译：具有翅片结构的半导体器件的制造方法
公开(公告)号：US07179692B2
公开(公告)日：2007-02-20
申请号：US10913409
申请日：2004-08-09
申请人： Bin Yu , Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang
发明人： Bin Yu , Shibly S. Ahmed , Judy Xilin An , Srikanteswara Dakshina-Murthy , Zoran Krivokapic , Haihong Wang
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/785 , H01L29/41733 , H01L29/42384 , H01L29/66795 , H01L29/66803
摘要： A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.
摘要翻译：形成半导体器件的方法包括在绝缘层上形成翅片，其中鳍片包括多个侧表面，顶表面和底表面。该方法还包括在绝缘层上形成栅极，其中栅极在半导体器件的沟道区域具有基本上U形的横截面。

4. 发明授权

US06717212B2 Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure 有权
标题翻译：绝缘体上绝缘体（SOI）结构中的漏电导热绝缘体材料（LTCIM）
公开(公告)号：US06717212B2
公开(公告)日：2004-04-06
申请号：US09879724
申请日：2001-06-12
申请人： Dong-Hyuk Ju , William George En , Srinath Krishnan , Concetta E. Riccobene , Zoran Krivokapic , Judy Xilin An , Bin Yu
发明人： Dong-Hyuk Ju , William George En , Srinath Krishnan , Concetta E. Riccobene , Zoran Krivokapic , Judy Xilin An , Bin Yu
IPC分类号： H01L31392
CPC分类号： H01L21/76254 , H01L21/187 , H01L29/78603 , H01L29/78606 , H01L29/78609 , H01L29/78612
摘要： A device and method for making a semiconductor-on-insulator (SOI) structure having a leaky, thermally conductive material (LTCIM) layer disposed between a semiconductor substrate and a semiconductor layer.
摘要翻译：一种用于制造绝缘体半导体（SOI）结构的装置和方法，其具有设置在半导体衬底和半导体层之间的具有泄漏的导热材料（LTCIM）层。

5. 发明授权

US08580660B2 Double and triple gate MOSFET devices and methods for making same 有权
标题翻译：双栅极和三栅极MOSFET器件及其制造方法
公开(公告)号：US08580660B2
公开(公告)日：2013-11-12
申请号：US13523603
申请日：2012-06-14
申请人： Ming-Ren Lin , Judy Xilin An , Zoran Krivokapic , Cyrus E. Tabery , Haihong Wang , Bin Yu
发明人： Ming-Ren Lin , Judy Xilin An , Zoran Krivokapic , Cyrus E. Tabery , Haihong Wang , Bin Yu
IPC分类号： H01L29/72
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/66795 , H01L29/66818
摘要： A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.
摘要翻译：双栅极金属氧化物半导体场效应晶体管（MOSFET）包括鳍状物，第一栅极和第二栅极。第一个门形成在鳍的顶部。第二个门围绕翅片和第一个门。在另一实施方案中，三栅极MOSFET包括鳍片，第一栅极，第二栅极和第三栅极。第一个门形成在鳍的顶部。第二个门形成在翅片附近。第三栅极形成在翅片附近并与第二栅极相对。

6. 发明授权

US06897527B2 Strained channel FinFET 有权
标题翻译：应变通道FinFET
公开(公告)号：US06897527B2
公开(公告)日：2005-05-24
申请号：US10833112
申请日：2004-04-28
申请人： Srikanteswara Dakshina-Murthy , Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
发明人： Srikanteswara Dakshina-Murthy , Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
IPC分类号： H01L21/336 , H01L29/10 , H01L29/49 , H01L29/786 , H01L27/01
CPC分类号： H01L29/785 , H01L29/1054 , H01L29/4908 , H01L29/66795 , H01L29/78654 , H01L29/78687
摘要： A semiconductor device includes a fin and a layer formed on at least a portion of the fin. The fin includes a first crystalline material. The layer includes a second crystalline material, where the first crystalline material has a larger lattice constant than the second crystalline material to induce tensile strain within the layer.
摘要翻译：半导体器件包括翅片和形成在鳍片的至少一部分上的层。翅片包括第一结晶材料。该层包括第二结晶材料，其中第一结晶材料具有比第二结晶材料更大的晶格常数以在层内引起拉伸应变。

7. 发明授权

US06855583B1 Method for forming tri-gate FinFET with mesa isolation 失效
标题翻译：用于形成台栅隔离的三栅极FinFET的方法
公开(公告)号：US06855583B1
公开(公告)日：2005-02-15
申请号：US10633503
申请日：2003-08-05
申请人： Zoran Krivokapic , Judy Xilin An , Bin Yu
发明人： Zoran Krivokapic , Judy Xilin An , Bin Yu
IPC分类号： H01L21/336 , H01L29/786 , H01L21/00
CPC分类号： H01L29/785 , H01L29/66545 , H01L29/66795
摘要： A method forming a tri-gate fin field effect transistor includes forming an oxide layer over a silicon-on-insulator wafer comprising a silicon layer, and etching the silicon and oxide layers using a rectangular mask to form a mesa. The method further includes etching a portion of the mesa using a second mask to form a fin, forming a gate dielectric layer over the fin, and forming a tri-gate over the fin and the gate dielectric layer.
摘要翻译：形成三栅极鳍场效应晶体管的方法包括在包括硅层的绝缘体上硅晶片上形成氧化物层，并且使用矩形掩模蚀刻硅和氧化物层以形成台面。该方法还包括使用第二掩模蚀刻台面的一部分以形成翅片，在翅片上形成栅极电介质层，并在鳍状物和栅极介电层上形成三栅极。

8. 发明授权

US06762483B1 Narrow fin FinFET 有权
标题翻译：窄鳍FinFET
公开(公告)号：US06762483B1
公开(公告)日：2004-07-13
申请号：US10348910
申请日：2003-01-23
申请人： Zoran Krivokapic , Judy Xilin An , Srikanteswara Dakshina-Murthy , Haihong Wang , Bin Yu
发明人： Zoran Krivokapic , Judy Xilin An , Srikanteswara Dakshina-Murthy , Haihong Wang , Bin Yu
IPC分类号： H01L2906
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/66818 , H01L29/78687
摘要： A method of forming fins for a double-gate fin field effect transistor (FinFET) includes forming a second layer of semi-conducting material over a first layer of semi-conducting material and forming double caps in the second layer of semi-conducting material. The method further includes forming spacers adjacent sides of each of the double caps and forming double fins in the first semi-conducting material beneath the double caps. The method also includes thinning the double fins to produce narrow double fins.
摘要翻译：一种形成双栅极鳍效应晶体管（FinFET）的鳍片的方法包括在第一半导体材料层上形成第二半导电材料层，并在第二半导体材料层中形成双重盖子。该方法还包括在每个双盖的侧面上形成间隔物，并在双盖下方的第一半导体材料中形成双翅片。该方法还包括使双翅片变薄以产生窄的双翅片。

9. 发明授权

US08334181B1 Germanium MOSFET devices and methods for making same 有权
标题翻译：锗MOSFET器件及其制造方法
公开(公告)号：US08334181B1
公开(公告)日：2012-12-18
申请号：US12836378
申请日：2010-07-14
申请人： Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
发明人： Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
IPC分类号： H01L29/72
CPC分类号： H01L29/7855 , H01L21/823821 , H01L29/42384 , H01L29/7843 , H01L29/78684
摘要： A double gate germanium metal-oxide semiconductor field-effect transistor (MOSFET) includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, and a second gate formed adjacent a second side of the germanium fin opposite the first side. A triple gate MOSFET includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, a second gate formed adjacent a second side of the germanium fin opposite the first side, and a top gate formed on top of the germanium fin. An all-around gate MOSFET includes a germanium fin, a first sidewall gate structure formed adjacent a first side of the germanium fin, a second sidewall gate structure formed adjacent a second side of the germanium fin, and additional gate structures formed on and around the germanium fin.
摘要翻译：双栅极锗金属氧化物半导体场效应晶体管（MOSFET）包括锗翅片，邻近锗翅片的第一侧形成的第一栅极和与第一侧相对的锗翅片第二侧附近形成的第二栅极。三栅极MOSFET包括锗翅片，与锗翅片的第一侧相邻形成的第一栅极，与第一侧相对的锗翅片的第二侧附近形成的第二栅极和形成在锗翅片顶部上的顶栅极。全栅极MOSFET包括锗翅片，邻近锗翅片的第一侧形成的第一侧壁栅极结构，邻近锗翅片的第二侧形成的第二侧壁栅极结构，以及形成在锗翅片上和周围的附近的栅极结构锗鳍

10. 发明授权

US06921963B2 Narrow fin FinFET 有权
标题翻译：窄鳍FinFET
公开(公告)号：US06921963B2
公开(公告)日：2005-07-26
申请号：US10830006
申请日：2004-04-23
申请人： Zoran Krivokapic , Judy Xilin An , Srikanteswara Dakshina-Murthy , Haihong Wang , Bin Yu
发明人： Zoran Krivokapic , Judy Xilin An , Srikanteswara Dakshina-Murthy , Haihong Wang , Bin Yu
IPC分类号： H01L21/336 , H01L29/423 , H01L29/786 , H01L29/06
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/66818 , H01L29/78687
摘要： A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.
摘要翻译：这里描述了窄通道FinFET，其具有窄的通道宽度。可以在窄通道上形成保护层，保护层比窄通道宽。

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