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1. 发明授权

US08476002B2 Methods of forming patterned masks 有权
标题翻译：形成图案化掩模的方法
公开(公告)号：US08476002B2
公开(公告)日：2013-07-02
申请号：US13609027
申请日：2012-09-10
申请人： Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F7/26
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

2. 发明申请

US20130004889A1 Methods of Forming Patterned Masks 有权
标题翻译：形成图案面具的方法
公开(公告)号：US20130004889A1
公开(公告)日：2013-01-03
申请号：US13609027
申请日：2012-09-10
申请人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F1/76 , G03F1/80 , G03F1/68
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

3. 发明授权

US08288083B2 Methods of forming patterned masks 有权
标题翻译：形成图案化掩模的方法
公开(公告)号：US08288083B2
公开(公告)日：2012-10-16
申请号：US12940802
申请日：2010-11-05
申请人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F7/26
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

4. 发明申请

US20120115074A1 Methods Of Forming Patterned Masks 有权
标题翻译：形成图案面具的方法
公开(公告)号：US20120115074A1
公开(公告)日：2012-05-10
申请号：US12940802
申请日：2010-11-05
申请人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F1/00
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

5. 发明申请

US20120178026A1 IMAGING DEVICES, METHODS OF FORMING SAME, AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：成像装置，其形成方法和形成半导体器件结构的方法
公开(公告)号：US20120178026A1
公开(公告)日：2012-07-12
申请号：US12986836
申请日：2011-01-07
申请人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
发明人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
IPC分类号： G03F7/20 , H05K13/00 , H01J40/14
CPC分类号： G03F1/38 , G03F1/50 , G03F1/54 , Y10T29/49002
摘要： An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.
摘要翻译：一种成像装置，包括至少一个阵列图案区域和至少一个衰减区域。所述至少一个阵列图案区域中的多个成像特征和所述至少一个衰减区域中的多个辅助特征基本上彼此相同，并且基本上形成为间距。还公开了形成成像装置的方法和形成半导体器件结构的方法。

6. 发明授权

US08728721B2 Methods of processing substrates 有权
标题翻译：处理基板的方法
公开(公告)号：US08728721B2
公开(公告)日：2014-05-20
申请号：US13205004
申请日：2011-08-08
申请人： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J deVilliers , Dan Millward , Jianming Zhou , Michael D. Hyatt
发明人： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J deVilliers , Dan Millward , Jianming Zhou , Michael D. Hyatt
IPC分类号： G03F7/20
CPC分类号： G03F7/0035
摘要： A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.
摘要翻译：一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。公开了其他实现。

7. 发明授权

US08440371B2 Imaging devices, methods of forming same, and methods of forming semiconductor device structures 有权
标题翻译：成像装置，其形成方法以及形成半导体器件结构的方法
公开(公告)号：US08440371B2
公开(公告)日：2013-05-14
申请号：US12986836
申请日：2011-01-07
申请人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
发明人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
IPC分类号： G03F1/36
CPC分类号： G03F1/38 , G03F1/50 , G03F1/54 , Y10T29/49002
摘要： An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.
摘要翻译：一种成像装置，包括至少一个阵列图案区域和至少一个衰减区域。所述至少一个阵列图案区域中的多个成像特征和所述至少一个衰减区域中的多个辅助特征基本上彼此相同，并且基本上形成为间距。还公开了形成成像装置的方法和形成半导体器件结构的方法。

8. 发明授权

US08507191B2 Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same 有权
标题翻译：形成图案化的富含硅的可显影抗反射材料的方法和包括其的半导体器件结构
公开(公告)号：US08507191B2
公开(公告)日：2013-08-13
申请号：US12986806
申请日：2011-01-07
申请人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
发明人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
IPC分类号： G03F7/26
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , Y10T428/24802
摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
摘要翻译：形成图案化的富含硅的可显影抗反射材料的方法。一种这样的方法包括形成富含硅的可显影抗反射组合物。富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

9. 发明申请

US20120177891A1 METHODS OF FORMING A PATTERNED, SILICON-ENRICHED DEVELOPABLE ANTIREFLECTIVE MATERIAL AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE SAME 有权
标题翻译：形成图案的有机硅增强的可开发抗反射材料和包括其中的半导体器件结构的方法
公开(公告)号：US20120177891A1
公开(公告)日：2012-07-12
申请号：US12986806
申请日：2011-01-07
申请人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
发明人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
IPC分类号： B32B3/10 , H01L21/306
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , Y10T428/24802
摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
摘要翻译：形成图案化的富含硅的可显影抗反射材料的方法。一种这样的方法包括形成富含硅的可显影抗反射组合物。富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

10. 发明申请

US20120314196A1 LITHOGRAPHY WAVE-FRONT CONTROL SYSTEM AND METHOD 有权
标题翻译： LITHOGRAPHY波前控制系统和方法
公开(公告)号：US20120314196A1
公开(公告)日：2012-12-13
申请号：US13159245
申请日：2011-06-13
申请人： Yuan He , Jianming Zhou , Scott L. Light , Anton de Villiers , Kaveri Jain , Zishu Zhang , Dan Millward
发明人： Yuan He , Jianming Zhou , Scott L. Light , Anton de Villiers , Kaveri Jain , Zishu Zhang , Dan Millward
IPC分类号： G03F7/20 , G06F17/10
CPC分类号： G02B26/06 , G03F7/70091 , G03F7/70125 , G03F7/70258 , G03F7/70308 , G03F7/705 , G03F7/706
摘要： Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
摘要翻译：一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。描述其他实施例。

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