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1. 发明授权

US08476002B2 Methods of forming patterned masks 有权
标题翻译：形成图案化掩模的方法
公开(公告)号：US08476002B2
公开(公告)日：2013-07-02
申请号：US13609027
申请日：2012-09-10
申请人： Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F7/26
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

2. 发明申请

US20130004889A1 Methods of Forming Patterned Masks 有权
标题翻译：形成图案面具的方法
公开(公告)号：US20130004889A1
公开(公告)日：2013-01-03
申请号：US13609027
申请日：2012-09-10
申请人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F1/76 , G03F1/80 , G03F1/68
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

3. 发明授权

US08288083B2 Methods of forming patterned masks 有权
标题翻译：形成图案化掩模的方法
公开(公告)号：US08288083B2
公开(公告)日：2012-10-16
申请号：US12940802
申请日：2010-11-05
申请人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F7/26
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

4. 发明申请

US20120115074A1 Methods Of Forming Patterned Masks 有权
标题翻译：形成图案面具的方法
公开(公告)号：US20120115074A1
公开(公告)日：2012-05-10
申请号：US12940802
申请日：2010-11-05
申请人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F1/00
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

5. 发明授权

US08318578B2 Method of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08318578B2
公开(公告)日：2012-11-27
申请号：US12575263
申请日：2009-10-07
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/20
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

6. 发明申请

US20110244674A1 Method Of Forming A Plurality Of Spaced Features 有权
标题翻译：形成多个间隔特征的方法
公开(公告)号：US20110244674A1
公开(公告)日：2011-10-06
申请号：US12749923
申请日：2010-03-30
申请人： Farrell Good , Baosuo Zhou , Xiaolong Fang , Fatma Arzum Simsek-Ege
发明人： Farrell Good , Baosuo Zhou , Xiaolong Fang , Fatma Arzum Simsek-Ege
IPC分类号： H01L21/768 , H01L21/302 , H01L21/28
CPC分类号： H01L21/768 , H01L21/0332 , H01L21/28273 , H01L21/28282 , H01L21/302 , H01L21/32139 , H01L27/11521 , H01L27/11568
摘要： A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask have at least two layers of different composition, with one of the layers of each of the individual features having a tensile intrinsic stress of at least 400.0 MPa. The individual features have a total tensile intrinsic stress greater than 0.0 MPa. The mask is used while etching into the underlying material to form a plurality of spaced features comprising the underlying material. Other implementations are disclosed.
摘要翻译：形成多个间隔特征的方法包括在下面的材料上形成牺牲性硬掩模材料。牺牲硬掩模材料具有至少两层不同的组成。去除部分牺牲硬掩模材料以在下面的材料上形成掩模。掩模的各个特征具有至少两层不同的组成，其中每个单独特征的层之一具有至少400.0MPa的拉伸内应力。单个特征具有大于0.0MPa的总拉伸内在应力。当蚀刻到下面的材料中时，使用掩模以形成包括下面的材料的多个间隔的特征。公开了其他实现。

7. 发明授权

US08492278B2 Method of forming a plurality of spaced features 有权
公开(公告)号：US08492278B2
公开(公告)日：2013-07-23
申请号：US12749923
申请日：2010-03-30
申请人： Farrell Good , Baosuo Zhou , Xiaolong Fang , Fatma Arzum Simsek-Ege
发明人： Farrell Good , Baosuo Zhou , Xiaolong Fang , Fatma Arzum Simsek-Ege
IPC分类号： H01L21/311
CPC分类号： H01L21/768 , H01L21/0332 , H01L21/28273 , H01L21/28282 , H01L21/302 , H01L21/32139 , H01L27/11521 , H01L27/11568
摘要： A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask have at least two layers of different composition, with one of the layers of each of the individual features having a tensile intrinsic stress of at least 400.0 MPa. The individual features have a total tensile intrinsic stress greater than 0.0 MPa. The mask is used while etching into the underlying material to form a plurality of spaced features comprising the underlying material. Other implementations are disclosed.

8. 发明授权

US07618874B1 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US07618874B1
公开(公告)日：2009-11-17
申请号：US12114124
申请日：2008-05-02
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/20 , H01L21/108
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

9. 发明授权

US06537910B1 Forming metal silicide resistant to subsequent thermal processing 有权
标题翻译：形成金属硅化物，耐后续热处理
公开(公告)号：US06537910B1
公开(公告)日：2003-03-25
申请号：US09698745
申请日：2000-10-27
申请人： Robert Burke , Farrell Good , Anand Srinivasan
发明人： Robert Burke , Farrell Good , Anand Srinivasan
IPC分类号： C23C1624
CPC分类号： C23C16/42 , C23C16/24 , H01L21/28518 , Y10T428/12528 , Y10T428/12549 , Y10T428/12674
摘要： A metal suicide film and method of forming the same are provided. The method comprises depositing metal silicide layers onto a substrate assembly with alternating layers of silicon. The resulting metal silicide film has a disrupted grain structure and smaller grain sizes than prior art films of the same thickness, which increases the resistance of the material to stress cracks in subsequent thermal processing and reduces the overall residual stress of the material.
摘要翻译：提供了一种金属硅化物膜及其形成方法。该方法包括将金属硅化物层沉积到具有交替的硅层的衬底组件上。所得到的金属硅化物膜具有与现有技术相同厚度的膜相比晶粒结构破碎并且晶粒尺寸更小，这增加了随后的热处理中材料对应力裂纹的阻力，并降低了材料的总剩余应力。

10. 发明申请

US20100151653A1 Methods Of Forming A Plurality Of Capacitors 有权
标题翻译：形成多种电容器的方法
公开(公告)号：US20100151653A1
公开(公告)日：2010-06-17
申请号：US12710077
申请日：2010-02-22
申请人： Vishwanath Bhat , Kevin R. Shea , Farrell Good
发明人： Vishwanath Bhat , Kevin R. Shea , Farrell Good
IPC分类号： H01L21/02
CPC分类号： H01L27/10894 , H01L27/10852 , H01L28/91
摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Covering material is formed over an elevationally outer lateral interface of the conductive material within the trench and the insulative material of the circuitry area. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area and to expose the conductive material within the trench. The conductive material within the array area is incorporated into a plurality of capacitors.
摘要翻译：形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。中间区域包括沟槽。导电材料形成在开口内并抵靠沟槽的侧壁部分，以小于完全填充沟槽。覆盖材料形成在沟槽内的导电材料的正面外侧界面和电路区域的绝缘材料之间。用液体蚀刻溶液蚀刻阵列区域内的绝缘材料，该液体蚀刻溶液有效地暴露阵列区域内的导电材料的外侧壁部分并露出沟槽内的导电材料。阵列区域内的导电材料被并入多个电容器中。

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