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1. 发明授权

US08476002B2 Methods of forming patterned masks 有权
标题翻译：形成图案化掩模的方法
公开(公告)号：US08476002B2
公开(公告)日：2013-07-02
申请号：US13609027
申请日：2012-09-10
申请人： Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
发明人： Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
IPC分类号： G03F7/26
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0273 , H01L21/0337 , H01L21/31138
摘要： Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
摘要翻译：一些实施例包括其中间隔开的第一特征由具有回流温度的第一材料形成的方法。第二材料沿着第一特征的侧壁形成，第三材料形成在第二材料上和第一特征上。第三材料可以在高于第一材料的回流温度的温度下形成，并且第二材料可以支撑第一特征，使得第一特征即使暴露于这样的温度也不会折叠。在一些实施例中，第三材料具有起伏的形貌。第四材料可以形成在波状形貌的谷中，并且随后可以与第三材料中的至少一些一起去除第一特征以留下包括由第二材料形成的第二特征的图案和由第四材料形成的基座。

2. 发明授权

US08507191B2 Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same 有权
标题翻译：形成图案化的富含硅的可显影抗反射材料的方法和包括其的半导体器件结构
公开(公告)号：US08507191B2
公开(公告)日：2013-08-13
申请号：US12986806
申请日：2011-01-07
申请人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
发明人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
IPC分类号： G03F7/26
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , Y10T428/24802
摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
摘要翻译：形成图案化的富含硅的可显影抗反射材料的方法。一种这样的方法包括形成富含硅的可显影抗反射组合物。富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

3. 发明申请

US20120177891A1 METHODS OF FORMING A PATTERNED, SILICON-ENRICHED DEVELOPABLE ANTIREFLECTIVE MATERIAL AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE SAME 有权
标题翻译：形成图案的有机硅增强的可开发抗反射材料和包括其中的半导体器件结构的方法
公开(公告)号：US20120177891A1
公开(公告)日：2012-07-12
申请号：US12986806
申请日：2011-01-07
申请人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
发明人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
IPC分类号： B32B3/10 , H01L21/306
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , Y10T428/24802
摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
摘要翻译：形成图案化的富含硅的可显影抗反射材料的方法。一种这样的方法包括形成富含硅的可显影抗反射组合物。富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

4. 发明授权

US08575032B2 Methods of forming a pattern on a substrate 有权
公开(公告)号：US08575032B2
公开(公告)日：2013-11-05
申请号：US13101485
申请日：2011-05-05
申请人： Scott L. Light , Anton J. deVilliers
发明人： Scott L. Light , Anton J. deVilliers
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.

5. 发明申请

US20110052883A1 METHODS OF FORMING REVERSED PATTERNS IN A SUBSTRATE AND SEMICONDUCTOR STRUCTURES FORMED DURING SAME 有权
标题翻译：在基板中形成反向图案的方法和在其中形成的半导体结构
公开(公告)号：US20110052883A1
公开(公告)日：2011-03-03
申请号：US12552879
申请日：2009-09-02
申请人： Kaveri Jain , Anton J. deVilliers
发明人： Kaveri Jain , Anton J. deVilliers
IPC分类号： B32B3/10 , G03F7/20
CPC分类号： H01L21/3086 , G03F7/2022 , Y10T428/24802
摘要： A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.
摘要翻译：在基板中形成反转图案的方法。衬底上的抗蚀剂被曝光和显影以在其中形成图案，图案化抗蚀剂具有第一极性。图案化抗蚀剂的极性反转到第二极性，并且在具有第二极性的图案化抗蚀剂上形成反转膜。去除具有第二极性的图案化抗蚀剂，在反转膜中形成图案。然后将反转膜中的图案转移到基底。公开了在衬底中形成反向图案的附加方法，以及在该方法期间形成的半导体结构。

6. 发明申请

US20120282778A1 Methods Of Forming A Pattern On A Substrate 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US20120282778A1
公开(公告)日：2012-11-08
申请号：US13101485
申请日：2011-05-05
申请人： Scott L. Light , Anton J. deVilliers
发明人： Scott L. Light , Anton J. deVilliers
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.
摘要翻译：在衬底上形成图案的方法包括在下面的衬底上形成四个第一线的重复图案。四条第二条线的重复图案在四条第一条线的重复图案的正上方横跨形成。四条第二条线的第一次交替从第一条线路上被接收除去。在四条第二条线的第一次交替已经被去除之后，四条第一条线的交替的高度暴露的部分使用四条第二条线的剩余的第二交替作为掩模被去除到下面的基底。另外的实施例被公开和预期。

7. 发明授权

US08629048B1 Methods of forming a pattern on a substrate 有权
公开(公告)号：US08629048B1
公开(公告)日：2014-01-14
申请号：US13542913
申请日：2012-07-06
申请人： Vishal Sipani , Anton J. deVilliers
发明人： Vishal Sipani , Anton J. deVilliers
IPC分类号： H01L21/3205
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed.

8. 发明申请

US20140011364A1 METHODS OF FORMING A PATTERN ON A SUBSTRATE 有权
标题翻译：在基板上形成图案的方法
公开(公告)号：US20140011364A1
公开(公告)日：2014-01-09
申请号：US13542913
申请日：2012-07-06
申请人： Vishal Sipani , Anton J. deVilliers
发明人： Vishal Sipani , Anton J. deVilliers
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed.
摘要翻译：在衬底上形成图案的方法包括沿纵向延伸的第一线和第一侧壁隔离件纵向地沿着第一线的相对侧纵向地形成在下面的衬底上。纵向细长的第二线和第二侧壁间隔物沿着第二线的相对侧纵向地形成。第二线和第二侧壁间隔物跨越第一线和第一侧壁间隔物横向交叉。第二侧壁隔离物从第一线上的交叉排出。第一和第二线在形成包括第一和第二侧壁隔板的部分的图案的基底上移除。公开了其他方法。

9. 发明授权

US09291907B2 Methods for forming resist features and arrays of aligned, elongate resist features 有权
标题翻译：用于形成抗蚀剂特征的方法和对准的细长抗蚀剂特征的阵列
公开(公告)号：US09291907B2
公开(公告)日：2016-03-22
申请号：US13475574
申请日：2012-05-18
申请人： Kaveri Jain , Adam L. Olson , William R. Brown , Lijing Gou , Ho Seop Eom , Anton J. deVilliers
发明人： Kaveri Jain , Adam L. Olson , William R. Brown , Lijing Gou , Ho Seop Eom , Anton J. deVilliers
IPC分类号： H01L21/312 , G03F7/38 , G03F7/11 , G03F7/32
CPC分类号： G03F7/38 , G03F7/11 , G03F7/322 , G03F7/325
摘要： Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.
摘要翻译：公开了形成抗蚀剂特征，抗蚀剂图案和对准的细长抗蚀剂特征的阵列的方法。所述方法包括向抗蚀剂的至少下表面加入化合物，例如酸或碱，以改变暴露的，酸性的抗蚀剂区域和未曝光的碱性抗蚀剂区域中的至少一段的酸度。酸度中的改变，例如增加或减少，使酸碱平衡发生变化，以促进或阻止该区段的发育。可以使用这种“化学邻近校正”技术来增强暴露的酸性抗蚀剂区段的酸度，以增强未曝光的碱性抗蚀剂区段的碱性，或有效地将暴露的酸性抗蚀剂区段转化为未曝光的碱性抗蚀剂段或反之亦然。因此，可以避免不必要的换行符，行合并或未对齐。

10. 发明授权

US08758987B2 Methods of forming a reversed pattern in a substrate 有权
标题翻译：在基材中形成反转图案的方法
公开(公告)号：US08758987B2
公开(公告)日：2014-06-24
申请号：US12552879
申请日：2009-09-02
申请人： Kaveri Jain , Anton J. deVilliers
发明人： Kaveri Jain , Anton J. deVilliers
IPC分类号： G03F7/26
CPC分类号： H01L21/3086 , G03F7/2022 , Y10T428/24802
摘要： A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.
摘要翻译：在基板中形成反转图案的方法。衬底上的抗蚀剂被曝光和显影以在其中形成图案，图案化抗蚀剂具有第一极性。图案化抗蚀剂的极性反转到第二极性，并且在具有第二极性的图案化抗蚀剂上形成反转膜。去除具有第二极性的图案化抗蚀剂，在反转膜中形成图案。然后将反转膜中的图案转移到基底。公开了在衬底中形成反向图案的附加方法，以及在该方法期间形成的半导体结构。

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