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1. 发明授权

US06813534B2 Endpoint detection in substrate fabrication processes 失效
标题翻译：基板制造工艺中的端点检测
公开(公告)号：US06813534B2
公开(公告)日：2004-11-02
申请号：US10081088
申请日：2002-02-20
申请人： Zhifeng Sui , Paul E Luscher , Nils Johansson , Michael D Welch
发明人： Zhifeng Sui , Paul E Luscher , Nils Johansson , Michael D Welch
IPC分类号： G06F1900
CPC分类号： H01L21/67253 , H01J37/32935 , H01J37/32963
摘要： In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.
摘要翻译：在具有通电气体的基板处理室中执行的处理的端点检测方法中，检测该处理的过程变量。所述过程变量包括以下中的至少一个：（i）由所述通电气体发射的辐射，（ii）从所述室中的衬底反射的辐射，（iii）所述通电气体的反射功率水平，以及（iv）在房间里当过程变量指示过程的终点时，发出端点信号。还检测该过程的过程参数，该过程参数包括以下中的至少一个：（i）源功率，（ii）RF正向功率，反射功率或匹配分量，（iii）RF峰 - 峰电压，电流或相位，（iv）DC偏置电平，（v）腔室压力或节流阀位置，（vi）气体组成或流速，（vii）衬底温度或组成，（viii）腔室部件或壁，以及（ix）磁限制水平或磁体位置。通过评估过程参数将端点信号确定为真或假。

2. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

3. 发明授权

US06797639B2 Dielectric etch chamber with expanded process window 失效
公开(公告)号：US06797639B2
公开(公告)日：2004-09-28
申请号：US10254969
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H01L2100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

4. 发明授权

US5891350A Adjusting DC bias voltage in plasma chambers 失效
标题翻译：调整等离子体室内的直流偏置电压
公开(公告)号：US5891350A
公开(公告)日：1999-04-06
申请号：US666981
申请日：1996-06-20
申请人： Hong Ching Shan , Evans Yip Lee , Michael D Welch , Robert W Wu , Bryan Pu , Paul Ernest Luscher , James David Carducci , Richard Blume
发明人： Hong Ching Shan , Evans Yip Lee , Michael D Welch , Robert W Wu , Bryan Pu , Paul Ernest Luscher , James David Carducci , Richard Blume
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
摘要翻译：一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

5. 发明授权

US06248206B1 Apparatus for sidewall profile control during an etch process 失效
标题翻译：在蚀刻过程中用于侧壁轮廓控制的装置
公开(公告)号：US06248206B1
公开(公告)日：2001-06-19
申请号：US08724660
申请日：1996-10-01
申请人： Harald Herchen , Michael D Welch , William Brown , Walter Richardson Merry
发明人： Harald Herchen , Michael D Welch , William Brown , Walter Richardson Merry
IPC分类号： C23F102
CPC分类号： H01J37/32082 , H01J37/3299 , H01L21/31116
摘要： A process is provided for controlling the slope of the sidewalls of an opening produced in a semiconductor wafer during an etch process. Microwave or radio frequency energy is remotely applied to pre-excite a process gas. Radio frequency energy is also supplied to the process gas within the process chamber. The sidewall slope is varied by varying the ratio of the amount of remote microwave or radio frequency energy supplied and that of the radio frequency energy supplied within the process chamber. The sidewall slope is also shaped by controlling the process gas flow rate and composition, and the pressure within the process chamber. A more vertical, anisotropic etch profile is obtained with increased radio frequency energy and lower process chamber pressure. A more horizontal, isotropic profile is obtained with decreased radio frequency energy and higher process chamber pressure. A narrower etched feature having smaller interlayer and active element contact regions than the corresponding feature size on the overlying photoresist layer may thereby be provided.
摘要翻译：提供了一种用于控制在蚀刻工艺期间在半导体晶片中产生的开口的侧壁的斜率的工艺。微波或射频能量被远程应用于预处理气体。射频能量也被提供给处理室内的处理气体。通过改变提供的远程微波或射频能量与处理室内提供的射频能量的比率来改变侧壁倾斜度。侧壁倾斜也通过控制工艺气体流速和组成以及处理室内的压力来成形。通过增加射频能量和较低的处理室压力获得更垂直的各向异性蚀刻轮廓。通过降低射频能量和更高的处理室压力获得更水平，各向同性的曲线。因此可以提供具有比覆盖的光致抗蚀剂层上的相应特征尺寸更小的中间层和有源元件接触区域的较窄蚀刻特征。

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