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1. 发明授权

US06544904B1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06544904B1
公开(公告)日：2003-04-08
申请号：US10157882
申请日：2002-05-31
申请人： Yuuki Kamiura , Hiroshi Tobimatsu , Kouji Oda , Mahito Sawada , Koji Shibata , Hiroyuki Kawata
发明人： Yuuki Kamiura , Hiroshi Tobimatsu , Kouji Oda , Mahito Sawada , Koji Shibata , Hiroyuki Kawata
IPC分类号： H01L2131
CPC分类号： H01L21/76802 , H01L21/31144 , H01L21/76832 , H01L24/05 , H01L2924/351 , H01L2924/00
摘要： A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film 4 using, as a mask, a polyimide film 5 having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film 5 prior to performing anisotropic etching on a silicon oxide film 3. During the heat treatment for imidizing the polyimide film 5, since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film 5 does not come unstuck from the silicon nitride film 4. Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.
摘要翻译：提供一种制造半导体器件的方法，其防止聚酰亚胺膜从薄膜脱落以进行各向同性蚀刻，并且进一步防止在用于酰亚胺化的热处理期间粘附到膜的各个侧面的沉积物脱落聚酰亚胺薄膜。在氮化硅膜4上进行各向同性蚀刻，使用形成有预定图案的聚酰亚胺膜5作为掩模。接下来，在对氧化硅膜3进行各向异性蚀刻之前，进行热处理以对聚酰亚胺膜5进行酰亚胺化。在酰亚胺化聚酰亚胺膜5的热处理中，由于通过各向异性蚀刻产生的沉积物为还没有粘附到膜的各个侧面，聚酰亚胺膜5不会从氮化硅膜4脱落。此外，附着在热处理后的膜的相应侧面的沉积物将不会脱落。

2. 发明授权

US06645859B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06645859B1
公开(公告)日：2003-11-11
申请号：US10170579
申请日：2002-06-14
申请人： Mahito Sawada , Hiroshi Tobimatsu , Kouji Oda , Yuuki Kamiura , Kouji Shibata , Hiroyuki Kawata
发明人： Mahito Sawada , Hiroshi Tobimatsu , Kouji Oda , Yuuki Kamiura , Kouji Shibata , Hiroyuki Kawata
IPC分类号： H01L2144
CPC分类号： H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76832 , H01L21/76834 , H01L21/76837
摘要： A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.
摘要翻译：提供了通过HDP-CVD（高密度等离子体 - 化学气相沉积）在密集布置的互连之间的间隙或谷中成功地填充绝缘膜的半导体器件的制造方法。该方法包括以下步骤：在半导体衬底上形成半导体元件，在半导体元件上形成与顶部保护层并排的多个互连以电连接半导体元件，通过除HDP-CVD之外的CVD形成保护绝缘膜以形成保护绝缘膜互连的顶盖和侧表面以及互连之间的间隙的底表面，并且通过HDP-CVD形成绝缘膜以覆盖保护绝缘膜并填充被保护绝缘膜覆盖的互连之间的间隙。

3. 发明授权

US06319849B1 Semiconductor device and a process for forming a protective insulating layer thereof 失效
标题翻译：半导体装置及其保护绝缘层的形成方法
公开(公告)号：US06319849B1
公开(公告)日：2001-11-20
申请号：US09228272
申请日：1999-01-11
申请人： Kouji Oda , Seiji Ohkura
发明人： Kouji Oda , Seiji Ohkura
IPC分类号： H01L2131
CPC分类号： H01L23/564 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L23/5329 , H01L27/115 , H01L27/11517 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.
摘要翻译：半导体器件中的保护绝缘膜形成为多层结构。下层部分由通过使用有机硅烷和氧气的P-CVD工艺形成的有机硅烷基氧化硅膜构成，以改善台阶覆盖。上层部分由含有大于化学计量组成的多余硅的硅烷系氧化硅膜构成，并通过P-CVD法形成以提高耐湿性。

4. 发明授权

US5880518A Semiconductor device including a two-layer protective insulating layer 失效
标题翻译：半导体器件包括两层保护绝缘层
公开(公告)号：US5880518A
公开(公告)日：1999-03-09
申请号：US827555
申请日：1997-03-28
申请人： Kouji Oda , Seiji Ohkura
发明人： Kouji Oda , Seiji Ohkura
IPC分类号： H01L21/316 , H01L21/8247 , H01L23/00 , H01L23/532 , H01L27/115 , H01L29/788 , H01L29/792 , H01L23/58
CPC分类号： H01L23/564 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L23/5329 , H01L27/115 , H01L27/11517 , H01L2924/0002 , H01L2924/12044
摘要： A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.
摘要翻译：半导体器件中的保护绝缘膜形成为多层结构。下层部分由通过使用有机硅烷和氧气的P-CVD工艺形成的有机硅烷基氧化硅膜构成，以改善台阶覆盖。上层部分由含有大于化学计量组成的多余硅的硅烷系氧化硅膜构成，并通过P-CVD法形成以提高耐湿性。

5. 发明授权

US08076844B2 Organic EL display device and manufacturing method of the same 有权
标题翻译：有机EL显示装置及其制造方法
公开(公告)号：US08076844B2
公开(公告)日：2011-12-13
申请号：US11968836
申请日：2008-01-03
申请人： Kouji Oda , Hiroyuki Fuchigami , Yusuke Yamagata , Katsumi Nakagawa , Junji Ohyama
发明人： Kouji Oda , Hiroyuki Fuchigami , Yusuke Yamagata , Katsumi Nakagawa , Junji Ohyama
IPC分类号： H01L51/50
CPC分类号： H01L27/3246 , H01L27/3258 , H01L51/5253
摘要： An organic EL display device includes a glass substrate and a flattening film arranged above the glass substrate. A plurality of anodes are arranged on a surface of the flattening film. A plurality of organic EL layers are arranged on a surface of the anodes. The flattening film has irregularities formed in at least a partial surface in a region outside a region where the plurality of organic EL layers are arranged. According to such a structure, an organic EL display device in which remaining of moisture in an insulating film is suppressed can be provided.
摘要翻译：有机EL显示装置包括玻璃基板和布置在玻璃基板上方的平坦化膜。多个阳极布置在平坦化膜的表面上。多个有机EL层布置在阳极的表面上。平坦化膜在布置多个有机EL层的区域外的区域中的至少部分表面中形成有凹凸。根据这样的结构，可以提供抑制绝缘膜中的水分残留的有机EL显示装置。

6. 发明申请

US20050227008A1 Titanium oxide photocatalyst, process for producing the same and application 有权
标题翻译：氧化钛光催化剂，其制备方法及应用
公开(公告)号：US20050227008A1
公开(公告)日：2005-10-13
申请号：US10508871
申请日：2003-03-20
申请人： Katsumi Okada , Katsuhiro Nishihara , Yasuhiro Masaki , Haruhiko Kajimura , Michiyasu Takahashi , Tadashi Yao , Tadashi Ogasawara , Munetoshi Watanabe , Shiji Shimosaki , Kouji Oda , Sadanobu Nagaoka
发明人： Katsumi Okada , Katsuhiro Nishihara , Yasuhiro Masaki , Haruhiko Kajimura , Michiyasu Takahashi , Tadashi Yao , Tadashi Ogasawara , Munetoshi Watanabe , Shiji Shimosaki , Kouji Oda , Sadanobu Nagaoka
IPC分类号： B01D53/86 , B01J21/06 , B01J23/18 , B01J27/132 , B01J27/135 , B01J35/00 , B01J37/02 , B01J37/22 , B05D3/02
CPC分类号： B01J35/004 , B01D53/8609 , B01D53/8612 , B01D53/8628 , B01D53/8634 , B01D53/8662 , B01D2255/802 , B01J21/063 , B01J23/18 , B01J27/132 , B01J27/135 , B01J35/002 , B01J37/0238 , B01J37/22
摘要： Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.
摘要翻译：二氧化钛基光催化剂，其在氧化钛中含有金属卤化物，并且其可由氧化钛和/或其前体制备，其可任选地被热处理，通过与含有式MX的金属卤化物的反应性气体接触，（其中M =金属，X =卤素，n =整数）与可见光照射一起稳定地产生高的光催化活性。可以随后通过与水接触或通过热处理来稳定光催化剂，和/或通过与杂多酸和/或异多酸接触来促进光催化剂，以在氧化钛中包括金属络合物。以这种方式制备的光催化剂显示出新的ESR特征。本发明还提供了制备这些光催化剂的方法，光催化剂分散体和含有这种光催化剂的光催化涂布液，以及光催化功能产物及其使用该光催化剂的制造方法。

7. 发明授权

US07521133B2 Titanium oxide photocatalyst, process for producing the same and application 有权
标题翻译：氧化钛光催化剂，其制备方法及应用
公开(公告)号：US07521133B2
公开(公告)日：2009-04-21
申请号：US10508871
申请日：2003-03-20
申请人： Katsumi Okada , Katsuhiro Nishihara , Yasuhiro Masaki , Haruhiko Kajimura , Michiyasu Takahashi , Tadashi Yao , Tadashi Ogasawara , Munetoshi Watanabe , Shiji Shimosaki , Kouji Oda , Sadanobu Nagaoka
发明人： Katsumi Okada , Katsuhiro Nishihara , Yasuhiro Masaki , Haruhiko Kajimura , Michiyasu Takahashi , Tadashi Yao , Tadashi Ogasawara , Munetoshi Watanabe , Shiji Shimosaki , Kouji Oda , Sadanobu Nagaoka
IPC分类号： B32B9/00 , C09D1/00 , C04B35/00
CPC分类号： B01J35/004 , B01D53/8609 , B01D53/8612 , B01D53/8628 , B01D53/8634 , B01D53/8662 , B01D2255/802 , B01J21/063 , B01J23/18 , B01J27/132 , B01J27/135 , B01J35/002 , B01J37/0238 , B01J37/22
摘要： Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.
摘要翻译：二氧化钛基光催化剂，其在氧化钛中含有金属卤化物，其可由可选择地经过热处理的氧化钛和/或其前体制备，所述氧化钛和/或其前体通过与含有式MXn或MOXn的金属卤化物的反应性气体接触其中M =金属，X =卤素，n =整数），加热可稳定地产生可见光照射的高光催化活性。可以随后通过与水接触或通过热处理来稳定光催化剂，和/或通过与杂多酸和/或异多酸接触来促进光催化剂，以在氧化钛中包括金属络合物。以这种方式制备的光催化剂显示出新的ESR特征。本发明还提供了制备这些光催化剂的方法，光催化剂分散体和含有这种光催化剂的光催化涂布液，以及光催化功能产物及其使用该光催化剂的制造方法。

8. 发明授权

US06607992B2 Antireflection coating and semiconductor device manufacturing method 有权
公开(公告)号：US06607992B2
公开(公告)日：2003-08-19
申请号：US09955100
申请日：2001-09-19
申请人： Kouichirou Tsujita , Atsumi Yamaguchi , Junjiro Sakai , Kouji Oda , Koichiro Narimatsu
发明人： Kouichirou Tsujita , Atsumi Yamaguchi , Junjiro Sakai , Kouji Oda , Koichiro Narimatsu
IPC分类号： H01L2131
CPC分类号： H01L21/76832 , G03F7/091 , H01L21/28123 , H01L21/3081 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L21/76897 , H01L2924/0002 , Y10T428/252 , Y10T428/254 , Y10T428/31982 , H01L2924/00
摘要： An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more than 2.5, the imaginary part is set in the range of not less than 0.9 nor more than 1.7, and the film thickness is set in the range of not less than 20 nm nor more than 60 nm. For the upper p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.7 nor more than 2.4, the imaginary part is set in the range of not less than 0.15 nor more than 0.75, and the film thickness is set in the range of not less than 10 nm nor more than 40 nm.

9. 发明申请

US20090239738A1 Titanium Oxide Photocatalyst, Process For Producing The Same And Application 审中-公开
标题翻译：氧化钛光催化剂，生产方法及应用
公开(公告)号：US20090239738A1
公开(公告)日：2009-09-24
申请号：US12371196
申请日：2009-02-13
申请人： Katsumi Okada , Katsuhiro Nishihara , Yasuhiro Masaki , Haruhiko Kajimura , Michiyasu Takahashi , Tadashi Yao , Tadashi Ogasawara , Munetoshi Watanabe , Shiji Shimosaki , Kouji Oda , Sadanobu Nagaoka
发明人： Katsumi Okada , Katsuhiro Nishihara , Yasuhiro Masaki , Haruhiko Kajimura , Michiyasu Takahashi , Tadashi Yao , Tadashi Ogasawara , Munetoshi Watanabe , Shiji Shimosaki , Kouji Oda , Sadanobu Nagaoka
IPC分类号： B01J27/135
CPC分类号： B01J35/004 , B01D53/8609 , B01D53/8612 , B01D53/8628 , B01D53/8634 , B01D53/8662 , B01D2255/802 , B01J21/063 , B01J23/18 , B01J27/132 , B01J27/135 , B01J35/002 , B01J37/0238 , B01J37/22
摘要： Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.
摘要翻译：二氧化钛基光催化剂，其在二氧化钛中含有金属卤化物，并且可以通过与含有式MXn或MOXn的金属卤化物的反应性气体接触而由氧化钛和/或其前体制备，其可以任选地进行热处理（其中M =金属，X =卤素，n =整数），加热可稳定地产生可见光照射的高光催化活性。可以随后通过与水接触或通过热处理来稳定光催化剂，和/或通过与杂多酸和/或异多酸接触来促进光催化剂，以在氧化钛中包括金属络合物。以这种方式制备的光催化剂显示出新的ESR特征。本发明还提供了制备这些光催化剂的方法，光催化剂分散体和含有这种光催化剂的光催化涂布液，以及光催化功能产物及其使用该光催化剂的制造方法。

10. 发明申请

US20050214533A1 Photocatalytic composite material and method for preparation thereof 审中-公开
标题翻译：光催化复合材料及其制备方法
公开(公告)号：US20050214533A1
公开(公告)日：2005-09-29
申请号：US10502112
申请日：2002-07-26
申请人： Shinji Shimosaki , Tadashi Ogasawara , Munetoshi Watanabe , Kouji Oda , Sadanobu Nagaoaka , Yasuhiro Masaki
发明人： Shinji Shimosaki , Tadashi Ogasawara , Munetoshi Watanabe , Kouji Oda , Sadanobu Nagaoaka , Yasuhiro Masaki
IPC分类号： B01D53/86 , B01J21/00 , B01J21/06 , B01J35/00 , B01J35/06 , B01J35/10 , B01J37/02 , C03C25/22 , C03C25/42 , C03C25/46 , C23C16/00
CPC分类号： B01J21/063 , B01D53/86 , B01D2255/20707 , B01D2255/802 , B01D2257/90 , B01J21/06 , B01J35/004 , B01J35/06 , B01J35/10 , B01J37/0238 , C03C25/223 , C03C25/42 , C03C2217/71 , Y10T428/2933
摘要： A photocatalytic composite material having a high activity and good durability is produced by coating the surface of a substrate with a continuous film of titanium oxide by vapor deposition from titanium tetrachloride. In the case of a substrate which is a mass of inorganic fibers such as glass cloth, the individual fibers or filaments in the mass are coated with titanium oxide. The vapor deposition is performed by contacting the substrate, such as a mass of inorganic fibers, which has been heated to 100-300° C., with a mixture of distilled pure titanium tetrachloride vapor and water vapor to form a film of a titanium oxide precursor on the surface of the substrate. Then, the substrate is heated at 300-600° C. in an oxidizing atmosphere, resulting in the formation on the substrate surface of a continuous film of a photocatalyst having a high activity and good adhesion to the substrate and comprising crystalline titanium oxide with an average crystallite diameter of 50 nm or smaller.
摘要翻译：通过用四氯化钛气相沉积用氧化钛的连续膜涂覆基板的表面，可以制得具有高活性和良好耐久性的光催化复合材料。在作为诸如玻璃布的无机纤维的质量的基底的情况下，该物质中的各个纤维或细丝被二氧化钛涂覆。通过将已加热至100-300℃的基质，例如大量无机纤维与蒸馏的纯四氯化钛蒸气和水蒸汽的混合物接触来进行气相沉积，以形成氧化钛膜在基底表面上的前体。然后，在氧化气氛中将衬底加热至300-600℃，导致在衬底表面上形成具有高活性和对衬底的良好粘附性的光催化剂的连续膜，并且包含结晶二氧化钛平均微晶直径为50nm以下。

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