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1. 发明授权

US5469457A Semiconductor laser with COD preventing disordered regions 失效
标题翻译：半导体激光器具有COD防止无序区域
公开(公告)号：US5469457A
公开(公告)日：1995-11-21
申请号：US149958
申请日：1993-11-10
申请人： Yutaka Nagai , Akihiro Shima
发明人： Yutaka Nagai , Akihiro Shima
IPC分类号： H01S5/00 , H01S5/022 , H01S5/042 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/343 , H01S3/18 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/02232 , H01S5/168 , H01S5/221 , H01S5/2231 , H01S5/3432
摘要： A semiconductor laser includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer disposed on the substrate; a quantum well structure disposed on the lower cladding layer; a second conductivity type upper cladding disposed on the quantum well structure; a ridge including a stripe-shaped second conductivity type semiconductor of a length extending in the laser resonator length direction reaching neither semiconductor laser facet and disposed on the upper cladding layer; disordered regions, i.e, window structures, formed in the quantum well structure in the vicinity of the laser resonator facets by ion-implanting a dopant impurity; and a first conductivity type current blocking layer, disposed on the upper cladding layer on the disordered quantum well structure layer, burying the ridge. Accordingly, in the window structure regions, flow of a current that does not produce laser light is prevented, resulting in a semiconductor laser having a high power light output, a low threshold current, and a low operational current.
摘要翻译：半导体激光器包括：第一导电型半导体衬底; 设置在所述基板上的第一导电型下包层; 设置在下包层上的量子阱结构; 设置在量子阱结构上的第二导电型上包层; 包括沿激光谐振器长度方向延伸的长度的条状第二导电型半导体的脊不到达半导体激光刻面并且设置在上覆层上; 通过离子注入掺杂剂杂质在激光谐振器面附近在量子阱结构中形成的无序区域，即窗结构; 以及第一导电型电流阻挡层，设置在无序量子阱结构层上的上覆层上，埋入脊。因此，在窗口结构区域中，防止不产生激光的电流的流动，导致具有高功率光输出，低阈值电流和低工作电流的半导体激光器。

2. 发明授权

US5577063A Semiconductor laser with improved window structure 失效
标题翻译：具有改善窗户结构的半导体激光器
公开(公告)号：US5577063A
公开(公告)日：1996-11-19
申请号：US469820
申请日：1995-06-06
申请人： Yutaka Nagai , Akihiro Shima
发明人： Yutaka Nagai , Akihiro Shima
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： H01S5/32 , B82Y20/00 , H01S5/2063 , H01S5/2231 , H01S5/3413 , H01S5/3432
摘要： A semiconductor laser includes a compound semiconductor substrate of a first conductivity type; successively disposed on said semiconductor substrate, a first conductivity type lower cladding layer, an active layer including a multiple quantum well structure, first and second upper cladding layers of a second conductivity type opposite the first conductivity type, and a first contacting layer of the second conductivity type in electrical contact with the second upper cladding layer; first and second electrodes in electrical contact with the semiconductor substrate and the first contacting layer, respectively, the semiconductor laser including opposed facets transverse to the lower cladding and the first and second upper cladding layers, the second upper cladding layer having a ridge shape that extends between the facets of the semiconductor laser and is centrally disposed on the first upper cladding layer; a first conductivity type current blocking layer disposed on and between the first upper cladding layer and the first contacting layer, contacting opposite sides of the ridge, and extending between the facets; and a window structure contiguous with each of the facets, each window structure comprising a region including a dopant impurity, each region being disposed within parts of the lower cladding layer, the active layer, and the first upper cladding layer opposite the ridge but not extending substantially into the second upper cladding layer, the multiple quantum well structure of the active layer being disordered in each window region.
摘要翻译：半导体激光器包括第一导电类型的化合物半导体衬底; 依次设置在所述半导体衬底上，第一导电型下包层，包括多量子阱结构的有源层，与第一导电类型相反的第二导电类型的第一和第二上覆层，以及第二导电类型的第二接触层导电类型与第二上包层电接触; 分别与半导体衬底和第一接触层电接触的第一和第二电极，所述半导体激光器包括横向于下包层和第一和第二上包层的相对面，第二上包层具有延伸的脊形状在所述半导体激光器的所述面之间并且居中地设置在所述第一上包层上; 第一导电型电流阻挡层，设置在第一上包覆层和第一接触层之间并且位于第一接触层之间，接触脊的相对侧并且在两个小面之间延伸; 以及与每个小平面相邻的窗口结构，每个窗口结构包括包括掺杂剂杂质的区域，每个区域设置在下包层，有源层和与脊相对的但不延伸的第一上包层的部分内基本上进入第二上包层，活性层的多量子阱结构在每个窗口区域中是无序的。

3. 发明授权

US5781577A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5781577A
公开(公告)日：1998-07-14
申请号：US586155
申请日：1996-01-17
申请人： Yutaka Nagai , Akihiro Shima
发明人： Yutaka Nagai , Akihiro Shima
IPC分类号： H01S5/00 , H01S5/16 , H01S5/20 , H01S5/34 , H01S3/18
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2063 , H01S5/3428
摘要： A semiconductor laser includes a first conductivity type semiconductor substrate, a first conductivity type lower cladding layer, a quantum well structure active layer including alternately laminated barrier and well layers, a disordered region extending to laser resonator facets, a second conductivity type first upper cladding layer disposed on the quantum well structure active layer, a ridge structure disposed on the first cladding layer, and having a first region not proximate the laser resonator facets including a second conductivity type second upper cladding layer and a second conductivity type first contact layer and a second region, proximate a laser resonator facet having a first conductivity type first semiconductor layer of the same material and thickness as the second upper cladding layer and a first conductivity type second semiconductor layer of same material as the first contact layer, a first conductivity type current blocking layer having a band gap energy larger than that of the second upper cladding burying the ridge structure, and a second conductivity type second contact layer disposed on the current blocking layer and the ridge structure. The band gap energy at the laser resonator facets is larger than in other regions and serves as a window structure. A refractive index distribution in the transverse direction confines laser light in the transverse direction below the ridge structure and there is no astigmatism.
摘要翻译：半导体激光器包括第一导电型半导体衬底，第一导电型下包层，包括交替层叠的势垒层和阱层的量子阱结构有源层，延伸到激光谐振器面的无序区域，第二导电类型的第一上覆层设置在量子阱结构有源层上，脊结构设置在第一覆层上，并且具有不邻近激光谐振器面的第一区域，该第一区域包括第二导电类型的第二上覆层和第二导电类型的第一接触层，第二导电类型的第二接触层区域，邻近具有与第二上包层相同材料和厚度的第一导电类型的第一半导体层和与第一接触层相同材料的第一导电类型的第二半导体层的激光谐振器面，第一导电类型电流阻挡带隙能量大于的层第二上包层埋设脊结构的第二导电类型的第二接触层，以及设置在电流阻挡层和脊结构上的第二导电类型的第二接触层。激光谐振器面处的带隙能量大于其他区域，并且用作窗口结构。横向上的折射率分布将激光沿着脊结构的横向限制，并且没有像散。

4. 发明授权

US08830807B2 Reproduction and recording method and reproduction and recording device using a virtual bit for address expansion of a recording medium while maintaining a conventional wobble address structure 有权
标题翻译：再现和记录方法以及使用用于记录介质的地址扩展的虚拟位的再现和记录装置，同时保持传统的摆动地址结构
公开(公告)号：US08830807B2
公开(公告)日：2014-09-09
申请号：US13577344
申请日：2010-11-10
申请人： Masakazu Ikeda , Koichiro Nishimura , Yutaka Nagai
发明人： Masakazu Ikeda , Koichiro Nishimura , Yutaka Nagai
IPC分类号： G11B7/24 , G11B20/12 , G11B27/10
CPC分类号： G11B20/1217 , G11B27/10 , G11B2020/1268 , G11B2020/1292 , G11B2220/2541
摘要： Obtain an expanded address without altering the bit number of an address which is embedded in a wobble. Generate a virtual bit which is not recorded on a disc, and which is expressed by the disparity from the rules and the presence or absence of information embedded in part or all of the wobble address.
摘要翻译：获取扩展的地址，而不会改变嵌入在摆动中的地址的位数。生成一个没有记录在光盘上的虚拟位，它由规则的差异表示，以及嵌入在部分或全部摆动地址中的信息的存在或不存在。

5. 发明申请

US20120307609A1 RECORDING MEDIUM, REPRODUCTION AND RECORDING METHOD, REPRODUCTION AND RECORDING DEVICE 有权
标题翻译：记录介质，再现和记录方法，再现和记录设备
公开(公告)号：US20120307609A1
公开(公告)日：2012-12-06
申请号：US13577344
申请日：2010-11-10
申请人： Masakazu Ikeda , Koichiro Nishimura , Yutaka Nagai
发明人： Masakazu Ikeda , Koichiro Nishimura , Yutaka Nagai
IPC分类号： G11B7/00
CPC分类号： G11B20/1217 , G11B27/10 , G11B2020/1268 , G11B2020/1292 , G11B2220/2541
摘要： Obtain an expanded address without altering the bit number of an address which is embedded in a wobble. Generate a virtual bit which is not recorded on a disc, and which is expressed by the disparity from the rules and the presence or absence of information embedded in part or all of the wobble address.
摘要翻译：获取扩展的地址，而不会改变嵌入在摆动中的地址的位数。生成一个没有记录在光盘上的虚拟位，它由规则的差异表示，以及嵌入在部分或全部摆动地址中的信息的存在或不存在。

6. 发明授权

US08050165B2 Optical information recording apparatus and optical information recording method 有权
标题翻译：光信息记录装置和光信息记录方法
公开(公告)号：US08050165B2
公开(公告)日：2011-11-01
申请号：US12480335
申请日：2009-06-08
申请人： Yutaka Nagai , Koichiro Nishimura , Junya Iizuka
发明人： Yutaka Nagai , Koichiro Nishimura , Junya Iizuka
IPC分类号： G11B7/0065
CPC分类号： G03H1/26 , G03H2001/185 , G03H2001/2655 , G11B7/0065 , G11B20/1217 , G11B2020/1288 , G11B2020/1289 , G11B2220/2504
摘要： A need to effectively record data of various sizes on a large-capacity holographic memory capable of high-speed recording is achieved, for example, by curing a first part of the holographic recording which is able to be multiplex-recorded in one or more units of a predetermined volume, and by not recording/curing a second part which is not able to be multiplex-recorded in a predetermined volume at a timing when the first recording part is cured. Also the above need can be achieved by, another example, by adding dummy data to the second part. Alternatively, the second part can be recorded on another track, in which it is possible to record in different units, e.g. by bit recording in a track that utilizes a DVD recording format. According to the present examples, we can record data of various sizes on the holographic memory effectively while performing large-capacity and high-speed holographic recording.
摘要翻译：可以在能够高速记录的大容量全息存储器上有效地记录各种尺寸的数据的需要，例如通过固化能够被多路复用记录在一个或多个单元中的第一部分全息记录并且通过在第一记录部件被固化的时刻不记录/固化不能被多路复用记录在预定体积中的第二部分。另外，通过向第二部分添加虚拟数据也可以实现上述需要。或者，第二部分可以记录在另一个轨道上，其中可以以不同的单位记录，例如，通过利用DVD记录格式的轨道中的比特记录。根据本实施例，在进行大容量高速全息记录的同时，可以有效地在全息存储器上记录各种尺寸的数据。

7. 发明申请

US20080101209A1 Multi-Layer Optical Disc, and Recording Method and Apparatus for Multi-Layer Optical Disc 有权
标题翻译：多层光盘，多层光盘记录方法及装置
公开(公告)号：US20080101209A1
公开(公告)日：2008-05-01
申请号：US11862231
申请日：2007-09-27
申请人： Yutaka Nagai , Koichiro Nishimura
发明人： Yutaka Nagai , Koichiro Nishimura
IPC分类号： G11B7/26
CPC分类号： G11B7/1267 , G11B7/24038 , G11B2007/0009
摘要： Each layer includes a data recording area and a test writing area divided into a plurality of small areas, wherein the small areas of the test writing area are recorded in advance so that other each layer can make a combination of recorded and unrecorded states with respect to the small area, where OPC is carried out, in a layer where OPC is carried out. Moreover, OPC is carried out to each small area, where a combination of recorded/unrecorded states of other each layer differs from each other, to thereby calculate, as the optimum power, an average value of the result of each OPC or a central value of the dispersion thereof.
摘要翻译：每个层包括数据记录区域和分成多个小区域的测试写入区域，其中预先记录测试写入区域的小区域，使得其他每层可以相对于记录区域和未记录状态组合在执行OPC的层中执行OPC的小区域。此外，对每个小区域进行OPC，其中每层的记录/未记录状态的组合彼此不同，从而计算每个OPC的结果的平均值或中心值的分散体。

8. 发明授权

US07322131B2 Shoe with slip preventive member 有权
标题翻译：鞋防滑成员
公开(公告)号：US07322131B2
公开(公告)日：2008-01-29
申请号：US10542039
申请日：2004-11-15
申请人： Yoshio Yamashita , Yasuhiro Morikawa , Yutaka Nagai
发明人： Yoshio Yamashita , Yasuhiro Morikawa , Yutaka Nagai
IPC分类号： A43B23/28
CPC分类号： A43B13/223 , A43B13/14
摘要： An object of the present invention is to enhance durability of the non-slip member of the shoe where a lot of non-slip protuberances are fixed to the surface of a base fabric. The shoe of the present invention comprises an upper 20 that covers an instep of a foot, a sole 21 having a ground contact surface and a non-slip member 1 provided on an outer surface of the upper 20 and/or the sole 21. The non-slip member 1 comprises a base fabric 12composed of a knitted fabric of a multilayer structure, the base fabric including an external knitted fabric layer 123 having a first surface 121 exposed to the outside and an internal knitted fabric layer 124 having a second surface 122 on a opposite side of the first surface 121 and a plurality of resin or rubber non-slip protuberances 1 that are fixed to the base fabric 12 and protrude from the first surface 121 of the external knitted fabric layer 123. A yarn constituting the external knitted fabric layer 123 is thicker than a yarn constituting the internal knitted fabric layer 124.
摘要翻译：本发明的一个目的是提高鞋子的防滑部件的耐用性，其中许多防滑突起固定在基底织物的表面上。本发明的鞋包括覆盖脚背的上部20，具有接地表面的鞋底21和设置在鞋面20和/或鞋底21的外表面上的防滑构件1。防滑构件1包括由多层结构的针织物构成的基底织物12，该基底织物包括具有暴露于外部的第一表面121的外部编织物层123和具有第二个外部织物层124的内部针织物层124 第一表面121的相反侧的表面122和固定到基底织物12并从外部编织物层123的第一表面121突出的多个树脂或橡胶防滑突起1。构成外针织物层123的纱线比构成内针织物层124的纱线厚。

9. 发明授权

US06333515B1 Arrangement and construction of crew protective device for automobile 失效
标题翻译：汽车机组防护装置的安排和建造
公开(公告)号：US06333515B1
公开(公告)日：2001-12-25
申请号：US09101716
申请日：1998-07-31
申请人： Yasushi Kubota , Masamichi Aono , Goro Takahashi , Takuya Ohtsuka , Minoru Shibata , Yutaka Nagai , Hiroyuki Tajima , Fumitake Kobayashi , Hiroki Nakajima , Chiharu Totani , Tadao Tanaka , Katsunori Noto
发明人： Yasushi Kubota , Masamichi Aono , Goro Takahashi , Takuya Ohtsuka , Minoru Shibata , Yutaka Nagai , Hiroyuki Tajima , Fumitake Kobayashi , Hiroki Nakajima , Chiharu Totani , Tadao Tanaka , Katsunori Noto
IPC分类号： B60R2182
CPC分类号： B60R21/213 , B60R13/0206 , B60R13/025 , B60R13/06 , B60R21/215 , B60R21/216 , B60R2013/0281 , B60R2013/0287 , B60R2013/0293 , B60R2021/0414 , B60R2021/0435 , B60R2021/2163
摘要： A structure of arranging an vehicle occupant protecting apparatus for an automotive vehicle, which can prevent a pillar garnish from scattering when an air bag installed in a front pillar portion is expanded, is provided. An air bag 16 is housed within a space formed by a front pillar main body 38 and a pillar garnish 40 in a front pillar portion 20. When the air bag 16 expands, the pillar garnish 40 is pressed by an expanding pressure of the air bag 16, so that an opening for expanding the air bag 16 is formed between the front pillar main body 38 and the pillar garnish 40, and the air bag 16 expands into a vehicle cabin through the opening. since a non-expanding portion is formed at the air bag 16 and a hinge portion 46 is formed at the pillar garnish 40, the expanding pressure applied to the pillar garnish 40 when the air bag 16 expand is low, so that the pillar garnish 40 can be easily opened through the hinge portion 46.
摘要翻译：提供了一种在安装在前柱部分中的气囊膨胀时布置用于机动车辆的车辆乘员保护装置的结构，其能够防止支柱装饰物散射。安全气囊16容纳在由前柱部20内的前柱主体38和支柱装饰40形成的空间内。当气囊16膨胀时，支柱装饰件40被气囊膨胀的压力如图16所示，使得在前支柱主体38和支柱装饰件40之间形成用于膨胀气囊16的开口，并且气囊16通过开口膨胀成车厢。由于在气囊16上形成非膨胀部，在支柱装饰40上形成有铰链部46，所以当气囊16膨胀时施加到支柱装饰40的膨胀压力低，使得支柱装饰40 可以通过铰链部分46容易地打开。

10. 发明授权

US06275515B1 Semiconductor laser device and method of producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06275515B1
公开(公告)日：2001-08-14
申请号：US09238170
申请日：1999-01-28
申请人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
发明人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/3235 , H01S5/32358 , H01S5/32383
摘要： A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
摘要翻译： GaAs衬底上的半导体激光器件，其振荡波长为1.3μm或1.55μm，以及制造该激光器件的方法。激光器件具有与GaAs衬底晶格匹配的BT1GaAs有源层。为了生长BTlGaAs活性层，使用有机金属气相沉积作为Tl的来源的环戊二烯基铊。

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