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1. 发明授权

US08829586B2 Semiconductor device and method for manufacturing semiconductor device having oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的半导体器件和半导体器件的制造方法
公开(公告)号：US08829586B2
公开(公告)日：2014-09-09
申请号：US13014075
申请日：2011-01-26
申请人： Yuta Endo , Takayuki Saito , Shunpei Yamazaki
发明人： Yuta Endo , Takayuki Saito , Shunpei Yamazaki
IPC分类号： H01L29/76 , H01L21/36 , H01L27/12 , H01L21/02 , H01L29/49 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/517
摘要： In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.
摘要翻译：在小型化晶体管中，需要栅极绝缘层来减小其厚度; 然而，在栅绝缘层是单层氧化硅膜的情况下，由于隧穿电流（即栅极漏电流）的增加，可能会发生栅极绝缘层变薄的物理极限。通过使用栅极绝缘层使用相对介电常数高于或等于10的高k膜，减小了小型化晶体管的栅极漏电流。通过使用高k膜作为相对介电常数高于与氧化物半导体层接触的第二绝缘层的第一绝缘层的第一绝缘层，栅绝缘层的厚度可以比栅的厚度薄根据氧化硅膜考虑的绝缘层。

2. 发明授权

US09260779B2 Light-transmitting conductive film, display device, electronic device, and manufacturing method of light-transmitting conductive film 有权
标题翻译：透光导电膜，显示装置，电子装置以及透光性导电膜的制造方法
公开(公告)号：US09260779B2
公开(公告)日：2016-02-16
申请号：US12781894
申请日：2010-05-18
申请人： Junichi Koezuka , Tetsunori Maruyama , Takayuki Saito , Yuki Imoto , Noriaki Uto , Yuta Endo , Hitomi Shionoya , Takuya Hirohashi , Shunpei Yamazaki
发明人： Junichi Koezuka , Tetsunori Maruyama , Takayuki Saito , Yuki Imoto , Noriaki Uto , Yuta Endo , Hitomi Shionoya , Takuya Hirohashi , Shunpei Yamazaki
IPC分类号： C23C14/08 , C23C14/34 , C23C14/06 , C23C14/58 , C23C14/54
CPC分类号： H01B1/02 , C23C14/0676 , C23C14/3414 , C23C14/541 , C23C14/5806
摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.
摘要翻译：本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

3. 发明授权

US08093136B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08093136B2
公开(公告)日：2012-01-10
申请号：US12340869
申请日：2008-12-22
申请人： Yuta Endo , Shunpei Yamazaki
发明人： Yuta Endo , Shunpei Yamazaki
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor substrate and a base substrate are prepared; a first insulating film is formed over the single crystal semiconductor substrate; a separation layer is formed by introducing ions at a predetermined depth through a surface of the single crystal semiconductor substrate; plasma treatment is performed on the base substrate so as to planarize a surface of the base substrate; a second insulating film is formed over the planarized base substrate; a surface of the first insulating film is bonded to a surface of the second insulating film by making the surface of the single crystal semiconductor substrate and the surface of the base substrate face each other; and a single crystal semiconductor film is provided over the base substrate with the second insulating film and the first insulating film interposed therebetween by performing separation at the separation layer.
摘要翻译：制备单晶半导体衬底和基底衬底; 在单晶半导体衬底上形成第一绝缘膜; 通过在单晶半导体衬底的表面上以预定深度引入离子形成分离层; 在基底基板上进行等离子体处理，使基板的表面平坦化; 在平坦化的基底基板上形成第二绝缘膜; 通过使单晶半导体衬底的表面和基底表面彼此面对，将第一绝缘膜的表面接合到第二绝缘膜的表面; 并且通过在分离层进行分离，在基底基板上设置有第二绝缘膜和第一绝缘膜之间的单晶半导体膜。

4. 发明授权

US10141120B2 Power storage system and manufacturing method thereof and secondary battery and capacitor 有权
公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
发明人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

5. 发明授权

US09929350B2 Light-emitting device 有权
公开(公告)号：US09929350B2
公开(公告)日：2018-03-27
申请号：US13405627
申请日：2012-02-27
申请人： Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0059 , H01L51/0067 , H01L2251/5384 , H01L2251/552
摘要： A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

6. 发明授权

US09887568B2 Moving object, wireless power feeding system, and wireless power feeding method 有权
公开(公告)号：US09887568B2
公开(公告)日：2018-02-06
申请号：US13023122
申请日：2011-02-08
申请人： Shunpei Yamazaki , Jun Koyama , Yutaka Shionoiri
发明人： Shunpei Yamazaki , Jun Koyama , Yutaka Shionoiri
IPC分类号： H02J7/00 , H02J7/14 , H02J17/00 , B60L11/00 , B60L11/18
CPC分类号： H02J7/0054 , B60L11/007 , B60L11/182 , B60L11/1833 , B60L2200/10 , B60L2200/12 , B60L2200/26 , H02J7/025 , H02J7/1407 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/20 , H02J50/40 , H02J50/90 , Y02T10/7005 , Y02T10/7072 , Y02T90/12 , Y02T90/121 , Y02T90/122 , Y02T90/125 , Y02T90/14
摘要： An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the intensity of radio waves radiated to the surroundings. A moving object having a plurality of antennas receives radio waves transmitted from a power feeding device. At least one of the plurality of antennas is installed apart from the other antenna(s) of the moving object. Then, the radio waves transmitted from the power feeding device are received by all the plurality of antennas and converted into electric energy. Alternatively, the radio waves transmitted from the power feeding device are received by one or more selected from the plurality of antennas and converted into electric energy.

7. 发明授权

US09842859B2 Driver circuit and display device 有权
公开(公告)号：US09842859B2
公开(公告)日：2017-12-12
申请号：US12606340
申请日：2009-10-27
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G09G5/00 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/1248
摘要： The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.

8. 发明授权

US09781783B2 Light-emitting device, display device, light-emitting system, and display system 有权
公开(公告)号：US09781783B2
公开(公告)日：2017-10-03
申请号：US13442073
申请日：2012-04-09
申请人： Koichiro Kamata , Yutaka Shionoiri , Shunpei Yamazaki
发明人： Koichiro Kamata , Yutaka Shionoiri , Shunpei Yamazaki
IPC分类号： G06F3/038 , H05B33/08 , H01L27/32
CPC分类号： H05B33/0815 , H01L27/3244 , H01L2251/5361 , H05B33/0896
摘要： A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven.

9. 发明授权

US09722212B2 Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof 有权
公开(公告)号：US09722212B2
公开(公告)日：2017-08-01
申请号：US13372087
申请日：2012-02-13
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L51/56 , H01L27/32
CPC分类号： H01L51/56 , H01L27/3246
摘要： The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

10. 发明授权

US09704446B2 Display device and driving method 有权
公开(公告)号：US09704446B2
公开(公告)日：2017-07-11
申请号：US13022879
申请日：2011-02-08
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G09G5/00 , G09G3/36
CPC分类号： G09G3/3614 , G09G3/3648 , G09G3/3655 , G09G3/3677 , G09G3/3688 , G09G2310/0297 , G09G2310/06 , G09G2310/08 , G09G2320/0214 , G09G2320/0247 , G09G2330/021 , G09G2330/023
摘要： An object is to reduce power consumption of a display device and to suppress deterioration of display quality. As a transistor provided for each pixel, a transistor including an oxide semiconductor layer is used. Note that off-state current of the transistor can be decreased when the oxide semiconductor layer is highly purified. Therefore, variation in the value of a data signal due to the off-state current of the transistor can be suppressed. That is, display deterioration (change) which occurs when writing frequency of the data signal to the pixel including the transistor is reduced (when a break period is lengthened) can be suppressed. In addition, flickers in display which generates when the frequency of an alternating-current driving signal supplied to a signal line in the break period is reduced can be suppressed.

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