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1. 发明授权

US4936252A Equipment for manufacturing semiconductor devices 失效
标题翻译：半导体器件制造设备
公开(公告)号：US4936252A
公开(公告)日：1990-06-26
申请号：US180051
申请日：1988-04-11
申请人： Yusuke Yajima , Hidekazu Okuhira , Kanji Tsujii , Seiichi Murayama , Akira Shintani , Yasuo Wada
发明人： Yusuke Yajima , Hidekazu Okuhira , Kanji Tsujii , Seiichi Murayama , Akira Shintani , Yasuo Wada
IPC分类号： H01L21/31 , C23C16/04 , C23C16/48
CPC分类号： C23C16/482 , C23C16/04
摘要： An equipment for manufacturing semiconductor devices has: a reaction chamber in which a substrate to be processed is placed; means for evacuating the reaction chamber; means for introducing a reaction gas into the reaction chamber; means for applying polarized light to the surface of the substrate for the purpose of depositing a thin film on the surface of the substrate using a photochemical reaction between the light and the reaction gas; and means for adjusting the direction of polarization of the light so as to be substantially perpendicular to the longitudinal axis of a stepped circuit pattern present on the surface of the substrate for the purpose of flattening the circuit pattern.
摘要翻译：用于制造半导体器件的设备具有：放置待处理基板的反应室; 用于抽空反应室的装置; 用于将反应气体引入反应室的装置; 用于将偏振光施加到基板的表面，用于使用光与反应气体之间的光化学反应在基板的表面上沉积薄膜的装置; 以及用于调整光的偏振方向以便基本上垂直于存在于基板表面上的阶梯式电路图案的纵轴的装置，以便使电路图形变平。

2. 发明授权

US4678536A Method of photochemical surface treatment 失效
标题翻译：光化学表面处理方法
公开(公告)号：US4678536A
公开(公告)日：1987-07-07
申请号：US799976
申请日：1985-11-20
申请人： Seiichi Murayama , Kanji Tsujii , Yusuke Yajima
发明人： Seiichi Murayama , Kanji Tsujii , Yusuke Yajima
IPC分类号： H01L21/302 , C23C16/04 , C23C16/48 , C23F1/02 , C23F1/12 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/306 , B05D3/06 , B44C1/22 , C03C15/00
CPC分类号： C23F1/12 , C23C16/047 , C23C16/482 , C23F1/02
摘要： A method of photochemically treating a surface of a material is disclosed which includes a step of introducing a reaction gas into a reaction chamber having a substrate therein, to make the reaction gas be adsorbed on the surface of the substrate, and a step of exposing the substrate to radiation of a wavelength at which the absorption of radiation energy by the reaction gas existing in the inner space of the reaction chamber is negligibly small and the radiation energy is absorbed by the reaction gas adsorbed on the surface of the substrate, wherein the kind of the reaction gas and the wavelength of the radiation are selected so that the surface of a predetermined material forming a pattern on the substrate can be selectively treated.
摘要翻译：公开了一种对材料表面进行光化学处理的方法，其包括将反应气体引入其中具有基板的反应室中以使反应气体吸附在基板的表面上的步骤，存在于反应室的内部空间中的反应气体吸收辐射能量的波长的基板与基板表面吸附的反应气体的辐射能量被吸收，选择反应气体和辐射波长，使得可以选择性地处理在基板上形成图案的预定材料的表面。

3. 发明授权

US4643799A Method of dry etching 失效
标题翻译：干蚀刻方法
公开(公告)号：US4643799A
公开(公告)日：1987-02-17
申请号：US809202
申请日：1985-12-16
申请人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
发明人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
IPC分类号： C23C14/22 , C23C26/00 , C23F4/00 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23C26/00 , C23C14/22 , C23F4/00 , H01L21/3065
摘要： A dry etching method according to the present invention is composed of the steps of evacuating the reaction chamber in which a substrate to be etched is set, introducing etching gas into the reaction chamber, causing the substrate to adsorb the introduced etching gas and thereafter evacuate the etching gas remaining in the reaction chamber, and irradiating the surface of the substrate to be etched with photon energy through a light window provided in the reaction chamber.
摘要翻译：根据本发明的干法蚀刻方法包括以下步骤：抽空其中设置待蚀刻基板的反应室，将蚀刻气体引入反应室，使基板吸附导入的蚀刻气体，然后将蚀刻残留在反应室中的气体，并且通过设置在反应室中的光窗口用光子能量照射待蚀刻的基板的表面。

4. 发明授权

US4716852A Apparatus for thin film formation using photo-induced chemical reaction 失效
标题翻译：使用光诱导化学反应的薄膜形成装置
公开(公告)号：US4716852A
公开(公告)日：1988-01-05
申请号：US848485
申请日：1986-04-07
申请人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
发明人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
IPC分类号： H01L21/205 , C23C16/48 , H01L21/263 , H01L21/285 , H01L21/31
CPC分类号： C23C16/482 , C23C16/483
摘要： An apparatus according to the present invention for thin film formation using a photo-induced chemical reaction comprises a reaction chamber in which a substrate can be set, means to introduce a reactive gas into the reaction chamber for the purpose of causing a surface of the substrate to adsorb the reactive gas, means to evacuate the reaction chamber, means to irradiate the substrate surface having adsorbed the reactive gas with photon energy for the purpose of forming a nucleus required for growing a film on the substrate surface, means to generate metastable excited molecules which can react with the reactive gas to decompose it, and means to introduce the reactive gas and the metastable excited molecules into the reaction chamber for the purpose of growing the film on the substrate formed with the nucleus on the basis of the nucleus.
摘要翻译：根据本发明的用于使用光诱导化学反应的薄膜形成的装置包括其中可以设置基底的反应室，用于将反应气体引入反应室中的手段，用于引起基底的表面为了吸附反应性气体，抽出反应室的装置是为了形成在衬底表面上生长薄膜所需的核的目的，以光子能量照射吸附有反应性气体的衬底表面的手段，产生亚稳激发分子其可以与反应性气体反应以分解它，并且将反应性气体和亚稳态激发分子引入反应室的手段是为了在基于核的基底上形成的基底上生长膜的目的。

5. 发明授权

US4615756A Dry etching apparatus 失效
标题翻译：干蚀刻装置
公开(公告)号：US4615756A
公开(公告)日：1986-10-07
申请号：US753858
申请日：1985-07-11
申请人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
发明人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32009 , H01L21/3065
摘要： An etching apparatus according to the present invention comprises means to generate metastable excited species such as of nitrogen or rare gas molecules, means to transfer the metastable excited species into a reaction chamber in which a substrate to-be-etched is set, and means to introduce a reactive gas for etching into the reaction chamber in which the substrate to-be-etched is set; the reactive gas being activated by collision between the metastable excited species and the reactive gas so as to etch the substrate to-be-etched owing to a reaction between the activated reactive gas and the substrate to-be-etched. Further, a light source for photo-exciting the substrate to-be-etched may well be added.
摘要翻译：根据本发明的蚀刻装置包括产生诸如氮气或稀有气体分子的亚稳激发物质的装置，用于将亚稳激发物质转移到其中设置待蚀刻基底的反应室中的装置，在其中设置待刻蚀的基板的反应室中引入用于蚀刻的反应气体; 活性气体通过亚稳态激发物质与反应性气体之间的碰撞而被活化，以便蚀刻由于被活化的反应气体和被蚀刻的基底之间的反应而被蚀刻的衬底。此外，可以添加用于光激发待蚀刻的衬底的光源。

6. 发明授权

US4653908A Grazing incidence reflection spectrometer 失效
标题翻译：掠射入射反射光谱仪
公开(公告)号：US4653908A
公开(公告)日：1987-03-31
申请号：US677245
申请日：1984-12-03
申请人： Yusuke Yajima , Seiichi Murayama , Kanji Tsujii
发明人： Yusuke Yajima , Seiichi Murayama , Kanji Tsujii
IPC分类号： G01N21/27 , G01J3/42 , G01N21/00 , G01N21/21 , G01N21/33 , G01J3/32
CPC分类号： G01N21/55 , G01J3/42 , G01N21/21
摘要： The present invention consists in a grazing incidence reflection spectrometer wherein light is caused to incide on a surface of a sample, and an intensity of light reflected from the sample surface is detected, thereby to measure an electronic absorption spectrum of a material adsorbed to the sample surface, characterized in that the incident light is visible light or ultraviolet light, and that the incident light has a predetermined glancing angle to the sample surface.
摘要翻译：本发明包括一种放射入射反射光谱仪，其中使光入射到样品的表面上，并且检测从样品表面反射的光的强度，从而测量吸附在样品上的材料的电子吸收光谱其特征在于入射光是可见光或紫外光，并且入射光对样品表面具有预定的扫视角。

7. 发明授权

US4887037A Electron spin resonance spectrometer 失效
标题翻译：电子自旋共振光谱仪
公开(公告)号：US4887037A
公开(公告)日：1989-12-12
申请号：US153092
申请日：1988-02-08
申请人： Yusuke Yajima , Kanji Tsujii
发明人： Yusuke Yajima , Kanji Tsujii
IPC分类号： G01R33/345 , G01R33/60
CPC分类号： G01R33/60
摘要： An electron spin resonance spectrometer is disclosed, in which a sample made of a semiconductor material or the like is illuminated with light while being applied with a magnetic field and a microwave, to detect the electron spin resonance due to a defect in a light-illuminated portion of the sample, on the basis of a photo-induced voltage appearing across the sample or a reduction in microwave intensity caused by the microwave absorption of the sample.
摘要翻译：公开了一种电子自旋共振光谱仪，其中由半导体材料等制成的样品在施加磁场和微波的同时用光照射，以检测由于光照射中的缺陷引起的电子自旋共振基于样品上出现的光诱导电压或由样品的微波吸收引起的微波强度的降低。

8. 发明授权

US5140272A Method of semiconductor surface measurment and an apparatus for realizing the same 失效
标题翻译：半导体表面测量方法和实现其的设备
公开(公告)号：US5140272A
公开(公告)日：1992-08-18
申请号：US248497
申请日：1988-09-23
申请人： Shigeru Nishimatsu , Tatsumi Mizutani , Ryo Haruta , Kanji Tsujii , Chusuke Munakata , Shigeyuki Hosoki
发明人： Shigeru Nishimatsu , Tatsumi Mizutani , Ryo Haruta , Kanji Tsujii , Chusuke Munakata , Shigeyuki Hosoki
IPC分类号： G01R31/26 , G01N27/00 , G01N27/22 , G01N27/24 , G01R27/26 , G01R29/12 , G01R29/14 , G01R29/24 , H01L21/66
CPC分类号： G01R29/24 , G01R27/2605
摘要： A method of semiconductor surface measurement for measuring electrical characteristics of a surface of a semiconductor body is disclosed, by which an electrode, whose surface, which is opposite to the surface of a semiconductor substrate, is flat and the gap between the electrode and the surface is smaller than 0.5 .mu.m.
摘要翻译：公开了一种半导体表面测量方法，用于测量半导体本体的表面的电特性，通过该方法，其表面与半导体衬底的表面相反的表面是平坦的，并且电极和表面之间的间隙小于0.5亩。

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