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1. 发明授权

US4643799A Method of dry etching 失效
标题翻译：干蚀刻方法
公开(公告)号：US4643799A
公开(公告)日：1987-02-17
申请号：US809202
申请日：1985-12-16
申请人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
发明人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
IPC分类号： C23C14/22 , C23C26/00 , C23F4/00 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23C26/00 , C23C14/22 , C23F4/00 , H01L21/3065
摘要： A dry etching method according to the present invention is composed of the steps of evacuating the reaction chamber in which a substrate to be etched is set, introducing etching gas into the reaction chamber, causing the substrate to adsorb the introduced etching gas and thereafter evacuate the etching gas remaining in the reaction chamber, and irradiating the surface of the substrate to be etched with photon energy through a light window provided in the reaction chamber.
摘要翻译：根据本发明的干法蚀刻方法包括以下步骤：抽空其中设置待蚀刻基板的反应室，将蚀刻气体引入反应室，使基板吸附导入的蚀刻气体，然后将蚀刻残留在反应室中的气体，并且通过设置在反应室中的光窗口用光子能量照射待蚀刻的基板的表面。

2. 发明授权

US4716852A Apparatus for thin film formation using photo-induced chemical reaction 失效
标题翻译：使用光诱导化学反应的薄膜形成装置
公开(公告)号：US4716852A
公开(公告)日：1988-01-05
申请号：US848485
申请日：1986-04-07
申请人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
发明人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
IPC分类号： H01L21/205 , C23C16/48 , H01L21/263 , H01L21/285 , H01L21/31
CPC分类号： C23C16/482 , C23C16/483
摘要： An apparatus according to the present invention for thin film formation using a photo-induced chemical reaction comprises a reaction chamber in which a substrate can be set, means to introduce a reactive gas into the reaction chamber for the purpose of causing a surface of the substrate to adsorb the reactive gas, means to evacuate the reaction chamber, means to irradiate the substrate surface having adsorbed the reactive gas with photon energy for the purpose of forming a nucleus required for growing a film on the substrate surface, means to generate metastable excited molecules which can react with the reactive gas to decompose it, and means to introduce the reactive gas and the metastable excited molecules into the reaction chamber for the purpose of growing the film on the substrate formed with the nucleus on the basis of the nucleus.
摘要翻译：根据本发明的用于使用光诱导化学反应的薄膜形成的装置包括其中可以设置基底的反应室，用于将反应气体引入反应室中的手段，用于引起基底的表面为了吸附反应性气体，抽出反应室的装置是为了形成在衬底表面上生长薄膜所需的核的目的，以光子能量照射吸附有反应性气体的衬底表面的手段，产生亚稳激发分子其可以与反应性气体反应以分解它，并且将反应性气体和亚稳态激发分子引入反应室的手段是为了在基于核的基底上形成的基底上生长膜的目的。

3. 发明授权

US4615756A Dry etching apparatus 失效
标题翻译：干蚀刻装置
公开(公告)号：US4615756A
公开(公告)日：1986-10-07
申请号：US753858
申请日：1985-07-11
申请人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
发明人： Kanji Tsujii , Yusuke Yajima , Seiichi Murayama
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32009 , H01L21/3065
摘要： An etching apparatus according to the present invention comprises means to generate metastable excited species such as of nitrogen or rare gas molecules, means to transfer the metastable excited species into a reaction chamber in which a substrate to-be-etched is set, and means to introduce a reactive gas for etching into the reaction chamber in which the substrate to-be-etched is set; the reactive gas being activated by collision between the metastable excited species and the reactive gas so as to etch the substrate to-be-etched owing to a reaction between the activated reactive gas and the substrate to-be-etched. Further, a light source for photo-exciting the substrate to-be-etched may well be added.
摘要翻译：根据本发明的蚀刻装置包括产生诸如氮气或稀有气体分子的亚稳激发物质的装置，用于将亚稳激发物质转移到其中设置待蚀刻基底的反应室中的装置，在其中设置待刻蚀的基板的反应室中引入用于蚀刻的反应气体; 活性气体通过亚稳态激发物质与反应性气体之间的碰撞而被活化，以便蚀刻由于被活化的反应气体和被蚀刻的基底之间的反应而被蚀刻的衬底。此外，可以添加用于光激发待蚀刻的衬底的光源。

4. 发明授权

US4678536A Method of photochemical surface treatment 失效
标题翻译：光化学表面处理方法
公开(公告)号：US4678536A
公开(公告)日：1987-07-07
申请号：US799976
申请日：1985-11-20
申请人： Seiichi Murayama , Kanji Tsujii , Yusuke Yajima
发明人： Seiichi Murayama , Kanji Tsujii , Yusuke Yajima
IPC分类号： H01L21/302 , C23C16/04 , C23C16/48 , C23F1/02 , C23F1/12 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/306 , B05D3/06 , B44C1/22 , C03C15/00
CPC分类号： C23F1/12 , C23C16/047 , C23C16/482 , C23F1/02
摘要： A method of photochemically treating a surface of a material is disclosed which includes a step of introducing a reaction gas into a reaction chamber having a substrate therein, to make the reaction gas be adsorbed on the surface of the substrate, and a step of exposing the substrate to radiation of a wavelength at which the absorption of radiation energy by the reaction gas existing in the inner space of the reaction chamber is negligibly small and the radiation energy is absorbed by the reaction gas adsorbed on the surface of the substrate, wherein the kind of the reaction gas and the wavelength of the radiation are selected so that the surface of a predetermined material forming a pattern on the substrate can be selectively treated.
摘要翻译：公开了一种对材料表面进行光化学处理的方法，其包括将反应气体引入其中具有基板的反应室中以使反应气体吸附在基板的表面上的步骤，存在于反应室的内部空间中的反应气体吸收辐射能量的波长的基板与基板表面吸附的反应气体的辐射能量被吸收，选择反应气体和辐射波长，使得可以选择性地处理在基板上形成图案的预定材料的表面。

5. 发明授权

US4936252A Equipment for manufacturing semiconductor devices 失效
标题翻译：半导体器件制造设备
公开(公告)号：US4936252A
公开(公告)日：1990-06-26
申请号：US180051
申请日：1988-04-11
申请人： Yusuke Yajima , Hidekazu Okuhira , Kanji Tsujii , Seiichi Murayama , Akira Shintani , Yasuo Wada
发明人： Yusuke Yajima , Hidekazu Okuhira , Kanji Tsujii , Seiichi Murayama , Akira Shintani , Yasuo Wada
IPC分类号： H01L21/31 , C23C16/04 , C23C16/48
CPC分类号： C23C16/482 , C23C16/04
摘要： An equipment for manufacturing semiconductor devices has: a reaction chamber in which a substrate to be processed is placed; means for evacuating the reaction chamber; means for introducing a reaction gas into the reaction chamber; means for applying polarized light to the surface of the substrate for the purpose of depositing a thin film on the surface of the substrate using a photochemical reaction between the light and the reaction gas; and means for adjusting the direction of polarization of the light so as to be substantially perpendicular to the longitudinal axis of a stepped circuit pattern present on the surface of the substrate for the purpose of flattening the circuit pattern.
摘要翻译：用于制造半导体器件的设备具有：放置待处理基板的反应室; 用于抽空反应室的装置; 用于将反应气体引入反应室的装置; 用于将偏振光施加到基板的表面，用于使用光与反应气体之间的光化学反应在基板的表面上沉积薄膜的装置; 以及用于调整光的偏振方向以便基本上垂直于存在于基板表面上的阶梯式电路图案的纵轴的装置，以便使电路图形变平。

6. 发明授权

US4653908A Grazing incidence reflection spectrometer 失效
标题翻译：掠射入射反射光谱仪
公开(公告)号：US4653908A
公开(公告)日：1987-03-31
申请号：US677245
申请日：1984-12-03
申请人： Yusuke Yajima , Seiichi Murayama , Kanji Tsujii
发明人： Yusuke Yajima , Seiichi Murayama , Kanji Tsujii
IPC分类号： G01N21/27 , G01J3/42 , G01N21/00 , G01N21/21 , G01N21/33 , G01J3/32
CPC分类号： G01N21/55 , G01J3/42 , G01N21/21
摘要： The present invention consists in a grazing incidence reflection spectrometer wherein light is caused to incide on a surface of a sample, and an intensity of light reflected from the sample surface is detected, thereby to measure an electronic absorption spectrum of a material adsorbed to the sample surface, characterized in that the incident light is visible light or ultraviolet light, and that the incident light has a predetermined glancing angle to the sample surface.
摘要翻译：本发明包括一种放射入射反射光谱仪，其中使光入射到样品的表面上，并且检测从样品表面反射的光的强度，从而测量吸附在样品上的材料的电子吸收光谱其特征在于入射光是可见光或紫外光，并且入射光对样品表面具有预定的扫视角。

7. 发明授权

US08742365B2 Ultraviolet water treatment apparatus 有权
标题翻译：紫外线水处理设备
公开(公告)号：US08742365B2
公开(公告)日：2014-06-03
申请号：US13021185
申请日：2011-02-04
申请人： Norimitsu Abe , Shinji Kobayashi , Seiichi Murayama , Takeshi Ide , Akihiko Shirota , Takahiro Soma
发明人： Norimitsu Abe , Shinji Kobayashi , Seiichi Murayama , Takeshi Ide , Akihiko Shirota , Takahiro Soma
IPC分类号： H01J37/00
CPC分类号： C02F1/325 , C02F2201/004 , C02F2201/3225 , C02F2201/3227 , C02F2201/324 , C02F2303/04
摘要： According to one embodiment, an ultraviolet water treatment apparatus includes an ultraviolet lamp unit provided with a first plumbing flange coupling on each of both ends thereof, and further provided therein with an ultraviolet irradiation tube including an ultraviolet lamp and a lamp protective tube configured to protect the ultraviolet lamp, and a cleaning device drive unit provided with a second plumbing flange coupling on each of both ends thereof and configured to drive a cleaning device configured to clean a surface of the lamp protective tube. The ultraviolet lamp unit and the cleaning device drive unit are coupled with each other on the first and second plumbing flange couplings.
摘要翻译：根据一个实施方案，一种紫外线水处理装置包括：紫外线灯单元，其在其两端各设有第一管道法兰接头，并且还设置有包括紫外线灯和保护管的紫外线照射管，紫外线灯和清洁装置驱动单元，其在其两端的每一端设置有第二管道法兰联接器，并且构造成驱动构造成清洁灯保护管的表面的清洁装置。紫外灯单元和清洁装置驱动单元在第一和第二管道法兰联接器上彼此联接。

8. 发明授权

US07820038B2 Ultraviolet radiation water treatment system 有权
公开(公告)号：US07820038B2
公开(公告)日：2010-10-26
申请号：US11373996
申请日：2006-03-14
申请人： Norimitsu Abe , Takeshi Ide , Takeshi Matsushiro , Hiroyuki Suzuki , Seiichi Murayama
发明人： Norimitsu Abe , Takeshi Ide , Takeshi Matsushiro , Hiroyuki Suzuki , Seiichi Murayama
IPC分类号： B01D17/12
CPC分类号： C02F1/325 , B01D21/0009 , B01D21/0012 , B01D21/32 , C02F1/001 , C02F1/5236 , C02F1/66 , C02F1/76 , C02F2001/007 , C02F2201/324 , C02F2201/326 , C02F2209/005 , C02F2209/11 , C02F2301/043
摘要： A water treatment system that performs a water purifying treatment by use of ultraviolet radiation, comprises a front stage ultraviolet radiation device for radiating ultraviolet light in a front stage process in a water purifying treatment process, a rear stage ultraviolet radiation device for radiating ultraviolet light in a rear stage process, and a controller for controlling these ultraviolet radiation devices.

9. 发明申请

US20080203004A1 ULTRAVIOLET IRRADIATION WATER TREATMENT APPARATUS 有权
标题翻译：超紫外线辐射水处理设备
公开(公告)号：US20080203004A1
公开(公告)日：2008-08-28
申请号：US12106890
申请日：2008-04-21
申请人： Norimitsu Abe , Takeshi Ide , Takahiro Soma , Seiichi Murayama , Masao Kaneko , Shojiro Tamaki , Masumi Nakadate , Akira Morikawa
发明人： Norimitsu Abe , Takeshi Ide , Takahiro Soma , Seiichi Murayama , Masao Kaneko , Shojiro Tamaki , Masumi Nakadate , Akira Morikawa
IPC分类号： B01D35/06
CPC分类号： C02F1/32 , C02F1/325 , C02F2201/3227 , C02F2201/324 , C02F2201/328
摘要： An ultraviolet irradiation water treatment apparatus includes a vessel having a cylindrical side portion, and plural rod-shaped ultraviolet lamps are disposed in parallel with a central axis of the side portion in the vessel. A water inlet pipe through which water flows into the vessel is provided in an outer wall of the side portion at a position in a tangential direction of an inner periphery of the side portion.
摘要翻译：紫外线照射水处理装置包括具有圆筒形侧部的容器，并且多个杆状紫外线灯与容器中的侧部的中心轴平行设置。在侧部的内周的切线方向的位置处，在侧部的外壁上设置有水流入容器内的进水管。

10. 发明授权

US5034655A Circular fluorescent lamp 失效
标题翻译：圆形荧光灯
公开(公告)号：US5034655A
公开(公告)日：1991-07-23
申请号：US397856
申请日：1989-08-24
申请人： Seiichi Murayama , Hiromitsu Matsuno , Tetsuo Ono , Yasusuke Seki , Atsuo Koyama , Churyo Kodama , Tsuyoshi Kobayashi
发明人： Seiichi Murayama , Hiromitsu Matsuno , Tetsuo Ono , Yasusuke Seki , Atsuo Koyama , Churyo Kodama , Tsuyoshi Kobayashi
IPC分类号： H01J61/72 , H01J61/32 , H01J61/42
CPC分类号： H01J61/42 , H01J61/322
摘要： A fluorescent lamp has at least a pair of electrodes, at least two circular discharge tubes connected to said electrodes and enclosing rare gas and mercury therein, and a phosphor coating provided on an inside wall of each of said discharge tubes, the two circular discharge tubes being arranged coaxially circularly on one and the same plane, the diameter of each of the discharge tubes being selected to have a value within a range of from 5 mm to 25 mm both inclusive, the luminance on surface of each of the discharge tubes being selected to have a value within a range of from 2.times.10.sup.4 Cd/m.sup.2 to 6.times.10.sup.4 Cd/m.sup.2.
摘要翻译：荧光灯具有至少一对电极，至少两个连接到所述电极的圆形放电管并且包围其中的稀有气体和汞，以及设置在每个所述放电管的内壁上的荧光体涂层，所述两个圆形放电管在同一平面上圆周同轴地布置，每个放电管的直径被选择为具有在5mm至25mm的范围内的值，其中，每个放电管的表面上的亮度被选择具有在2×10 4 Cd / m 2至6×10 4 Cd / m 2范围内的值。

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