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1. 发明专利

JP2011068548A GROUP 3B NITRIDE CRYSTAL IN WHICH Zn IS DOPED, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 有权
标题翻译：第3组氮化锌晶体，其制造方法及电子器件
公开(公告)号：JP2011068548A
公开(公告)日：2011-04-07
申请号：JP2010160718
申请日：2010-07-15
申请人： Yasuo Kitaoka , Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 康夫北岡 , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： IWAI MAKOTO , HIGASHIHARA SHUHEI , IMAI KATSUHIRO , MORI YUSUKE , KITAOKA YASUO , NAGAI SEIJI , SATO SHINYUKI
IPC分类号： C30B29/38 , C30B19/10
摘要： PROBLEM TO BE SOLVED: To provide a Zn-doped group 3B nitride crystal of high resistance and low dislocation density.
SOLUTION: In the Zn-doped group 3B nitride crystal, the specific resistance is at least 1×10
2 Ω cm, the Zn concentration in the group 3B nitride crystal is at least 1.0×10
18 atoms/cm
3 and at most 2×10
19 atoms/cm
3 , and the etch pit density is at most 5×10
6 /cm
2 . This crystal can be obtained by a liquid phase method (Na flux method).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高电阻和低位错密度的Zn掺杂的3B族氮化硼晶体。解决方案：在Zn掺杂基团3B氮化硅晶体中，电阻率为至少1×10 2 Ωcm，第3B族氮化物晶体中的Zn浓度为至少1.0×10 原子/ cm 3 / SP 3和至多2×10 14原子/ cm 3 / SP>，并且蚀刻坑密度至多为5×10 6 / cm 2 。该液晶可以通过液相法（Na通量法）得到。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010037155A Method for producing group iii nitride compound semiconductor crystal 有权
标题翻译：生产III族氮化物半导体晶体的方法
公开(公告)号：JP2010037155A
公开(公告)日：2010-02-18
申请号：JP2008202899
申请日：2008-08-06
申请人： Yusuke Mori , Toyoda Gosei Co Ltd , 勇介森 , 豊田合成株式会社
发明人： YAKUSHI YASUHIDE , YAMAZAKI SHIRO , NAGAI SEIJI , SATO SHINYUKI , MORI YUSUKE , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a production method of a thick film crystal of a group III nitride compound semiconductor the major face of which is not a c-plane, for fabricating a semiconductor element free from a piezoelectric effect in the layered direction. SOLUTION: The production method of a group III nitride compound semiconductor by a flux method using an alkali metal is disclosed, wherein a group III nitride compound semiconductor substrate 10 having a normal vector of the major face in a direction rotating by 0.2 to 5 degrees from the m-axis toward the +c-axis is used as a seed crystal, on which a crystal growth portion 11 of the group III nitride compound semiconductor is formed by a flux method, thereby a thick film crystal 100 of the group III nitride compound semiconductor having the normal line of the major face in a direction rotating by 0.2 to 5 degrees from the m-axis toward the +c-axis is obtained. Instead of the group III nitride compound semiconductor substrate 10, a group III nitride compound semiconductor film can be used, which has a normal line vector of the major face in a direction rotating by 0.2 to 5 degrees from the m-axis toward the +c-axis direction and is formed on a substrate of a different material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种III族氮化物化合物半导体的厚膜晶体的制造方法，该III族氮化物化合物半导体的主表面不是c面，用于制造在层状物中没有压电效应的半导体元件方向。解决方案：公开了通过使用碱金属的助熔剂法制备III族氮化物化合物半导体的方法，其中将III族氮化物化合物半导体衬底10的主面的法线向旋转0.2至使用从m轴朝向+ c轴的5度作为晶种，通过磁通法形成III族氮化物化合物半导体的晶体生长部11，从而形成组中的厚膜结晶100 获得具有从m轴朝向+ c轴旋转0.2〜5度的方向的主面的法线的III族氮化物化合物半导体。代替III族氮化物化合物半导体衬底10，可以使用III族氮化物化合物半导体膜，该III族氮化物化合物半导体膜在从m轴朝向+ c旋转0.2至5度的方向上具有主面的法线矢量并且形成在不同材料的基板上。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2011020896A GROUP 3B NITRIDE CRYSTAL DOPED WITH Zn, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE 审中-公开
标题翻译：用于Zn的氮化硼晶体组3B，其制造方法和电子器件
公开(公告)号：JP2011020896A
公开(公告)日：2011-02-03
申请号：JP2009167901
申请日：2009-07-16
申请人： Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： IWAI MAKOTO , HIGASHIHARA SHUHEI , IMAI KATSUHIRO , MORI YUSUKE , KITAOKA YASUO , NAGAI SEIJI , SATO SHINYUKI
IPC分类号： C30B29/38 , C30B19/02 , H01L21/20 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a Zn-doped group 3B nitride crystal having high resistance and low dislocation density.
SOLUTION: The Zn-doped group 3B nitride crystal has specific resistance of not less than 1×10
2 Ω cm, Zn concentration of from 1.0×10
18 to 2×10
19 atoms/cm
3 in the group 3B nitride crystal, and etch pit density of not more than 5×10
6 /cm
2 . The crystal can be obtained by a liquid phase method (Na flux method).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高电阻和低位错密度的Zn掺杂基团3B氮化物晶体。解决方案：Zn掺杂基团3B氮化硅晶体具有不小于1×10 2 Ωcm的电阻率，1.0×10 18 3B族氮化物晶体中的2×10 19 原子/ cm 3 / SP>，蚀刻坑密度不大于5×10 6 / 2 。可以通过液相法（Na通量法）获得晶体。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010037153A Method for producing group iii nitride semiconductor and seed crystal for growing group iii nitride semiconductor 有权
标题翻译：用于生产III族氮化物半导体的方法和用于生长III族氮化物半导体的晶种
公开(公告)号：JP2010037153A
公开(公告)日：2010-02-18
申请号：JP2008202647
申请日：2008-08-06
申请人： Yusuke Mori , Toyoda Gosei Co Ltd , 勇介森 , 豊田合成株式会社
发明人： SATO SHINYUKI , YAMAZAKI SHIRO , NAGAI SEIJI , YAKUSHI YASUHIDE , MORI YUSUKE , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a c-plane substrate of a group III nitride semiconductor in a shorter time than before, when it is grown by the Na flux method.
SOLUTION: A seed crystal 14 is a rectangular parallelepiped group III nitride semiconductor whose longitudinal direction is m axis direction and sides along the longitudinal direction are a-plane and c-plane. On the side which is a-plane of the seed crystal 14, a group III nitride semiconductor is grown to a-axis direction by the Na flux method. Thereby, a c-plane substrate 18 consisting of an isosceles triangular platy group III nitride semiconductor is obtained.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在比其以前更短的时间内生长III族氮化物半导体的c面衬底的方法，当其通过Na通量法生长时。解决方案：晶种14是长方体为m轴方向的长方体III族氮化物半导体，其长边方向为a面，c面。在晶种14的a面的一侧，通过Na通量法将III族氮化物半导体生长成a轴方向。由此，得到由等腰三角形板状III族氮化物半导体构成的c面基板18。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009018961A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device 有权
标题翻译：用于生产III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2009018961A
公开(公告)日：2009-01-29
申请号：JP2007182709
申请日：2007-07-12
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA TATSU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00 , C30B33/02 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a Group III nitride crystal having a low dislocation density and a low impurity concentration without damaging the crystal. SOLUTION: Nitrogen gas (nitrogen-containing gas 3) was dissolved in a Ga-Na-Li melt 2 in a reaction vessel 7 to grow a GaN crystal having a thickness of 100 μm on a principal surface 1m of a GaN base substrate 1 (a). Subsequently, metal Na was put into the reaction vessel 7, and the resulting mixture was heated to form a Na melt which is a liquid 4 for crystal treatment, in which was dissolved nitrogen gas (nitrogen-containing gas 3) to heat-treat the GaN crystal (group III nitride crystal 10). As a result, the surface of the crystal was roughened, but the crystal itself was not broken. As for the impurity concentrations of the GaN crystal (group III nitride crystal 10) and the GaN base substrate 1, Na concentration was 5×10 15 cm -3 , which was the same as the Na concentration before heat treatment, while Li concentration was 3×10 16 cm -3 , which was significantly lower than the Li concentration before heat treatment. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种具有低位错密度和低杂质浓度的III族氮化物晶体的制造方法，而不损害晶体。解决方案：将氮气（含氮气体3）溶解在反应容器7中的Ga-Na-Li熔体2中，以在GaN基材的主表面1m上生长厚度为100μm的GaN晶体基板1（a）。随后，将金属Na放入反应容器7中，将所得混合物加热，形成作为结晶处理用液体4的Na熔体，其中为溶解氮气（含氮气体3），热处理 GaN晶体（III族氮化物晶体10）。结果，晶体的表面被粗糙化，但是晶体本身没有被破坏。对于GaN晶体（III族氮化物晶体10）和GaN基底基板1的杂质浓度，Na浓度为5×10 15×SP> -3 ，这是与热处理前的Na浓度相同，而Li浓度为3×10 16℃/ SP> -3 ，明显低于热处理前的Li浓度。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2005072572A Manufacturing method of group iii nitride crystal substrate and etchant used for the same and, group iii nitride crystal substrate and semiconductor element using the same 有权
标题翻译： III族氮化物晶体基板的制造方法及其使用的蚀刻剂，第III族氮化物晶体基板和使用其的半导体元件
公开(公告)号：JP2005072572A
公开(公告)日：2005-03-17
申请号：JP2004227097
申请日：2004-08-03
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： MINEMOTO TAKASHI , KITAOKA YASUO , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B19/00 , C30B29/38 , C30B33/10 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/308 , H01L21/338 , H01L29/812 , H01L33/06 , H01L33/22 , H01L33/32 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with projections and recesses on the surface suppressed. SOLUTION: In a process of performing surface treatment on the surface of a group III nitride crystal 11 having projections and recesses, such as pits, hillocks, facets or the like, the surface is brought into contact with a melt including at least one of an alkali metal and alkaline earth metal for meltback etching, or the melt is used for mechano-chemical polishing. Thereby, the group III nitride crystal substrate 17, with suppressed work distortion and work defects and superior planarity of surface, is manufactured. Moreover, a semiconductor element with high characteristics, for example, is obtained by using this group III nitride crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种III族氮化物晶体基板，其表面上具有突起和凹陷。解决方案：在具有凹凸，例如凹坑，小丘，小面等的III族氮化物晶体11的表面进行表面处理的过程中，使表面与至少包括至少用于回熔蚀刻的碱金属和碱土金属之一，或熔体用于机械化学抛光。因此，制造了具有抑制的工作变形和工作缺陷以及优异的表面平面性的III族氮化物晶体基板17。此外，通过使用该III族氮化物晶体基板，可获得例如具有高特性的半导体元件。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2009091183A Method for growing group iii nitride crystal 有权
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009091183A
公开(公告)日：2009-04-30
申请号：JP2007262114
申请日：2007-10-05
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： UEMATSU KOJI , HIROTA TATSU , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, capable of growing a large crystal by a liquid phase process.
SOLUTION: The method for growing a group III nitride crystal 10 is a process for growing the crystal by a liquid phase process comprises: a step of preparing a group III nitride crystal substrate 1 having the same chemical composition as the group III nitride crystal 10 and a thickness of ≥0.5 mm and; a step of bringing a solution, which is obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with a major surface 1m of the group III nitride crystal substrate 1, to grow the group III nitride crystal 10 on the major surface 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种生长能够通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体10的方法是通过液相法生长晶体的工艺，包括：制备具有与III族氮化物相同的化学组成的III族氮化物晶体衬底1的步骤晶体10，厚度≥0.5mm; 通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而与III族氮化物晶体基板1的主面1m接触而获得的溶液的生长步骤主表面1m上的III族氮化物晶体10。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009051686A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2009051686A
公开(公告)日：2009-03-12
申请号：JP2007218530
申请日：2007-08-24
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a Group III nitride single crystal capable of reducing its dislocation density.
SOLUTION: The method for growing a Group III nitride crystal is for growing a first Group III nitride crystal 20 on the main surface 10m of a base substrate 10 using a melt containing a Group III metal element and an alkali metal element by a liquid phase process. The base substrate 10 contains a Group III nitride crystal layer 10a at least at the main surface 10m side and the normal 10mv of the main surface 10m of the base substrate 10 has a tilt angle to direction 10cv of the Group III nitride crystal layer 10a of 1-10°. When the first Group III nitride crystal 20 grows, at least a part of dislocation remaining in the first Group III nitride crystal 20 is transferred to {0001} plane 20c substantially in a parallel direction and discharged to the outer periphery of the first Group III nitride crystal 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低其位错密度的III族氮化物单晶的生长方法。解决方案：用于生长III族氮化物晶体的方法是使用含有III族金属元素和碱金属元素的熔体在基底10的主表面10m上生长第一III族氮化物晶体20 液相法。基底基板10至少在主表面10m侧包含III族氮化物晶体层10a，并且基底基板10的主表面10m的正常10mv具有III族氮化物晶体的<0001>方向10cv的倾斜角层10a为1-10°。当第一III族氮化物晶体20生长时，残留在第一III族氮化物晶体20中的位错的至少一部分基本上沿平行方向被转移到ä0001}平面20c并且被排放到第一III族氮化物晶体的外周 20.版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2009029673A Group iii nitride crystal and method for growing the same 审中-公开
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009029673A
公开(公告)日：2009-02-12
申请号：JP2007196307
申请日：2007-07-27
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/04 , C30B19/12
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal in which a large crystal can be grown by a liquid phase process. SOLUTION: The method for growing the group III nitride crystal 10 by a liquid phase process comprises the steps of: preparing a substrate 1 having a flat principal plane 1m, wherein the substrate includes a group III nitride seed crystal 1a having the same chemical composition as the group III nitride crystal 10 at least at the side of the principal plane 1m and the average density of the threading dislocation in the principal plane 1m is 5×10 6 cm -2 or less; and bringing the principal plane 1m of the substrate 1 into contact with a solution obtained by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal to grow the group III nitride crystal 10 on the principal plane 1m. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长其中可以通过液相法生长大晶体的III族氮化物晶体的方法。解决方案：通过液相法生长III族氮化物晶体10的方法包括以下步骤：制备具有平面主平面1m的衬底1，其中衬底包括具有相同的III族氮化物晶体1a 至少在主平面1m侧的III族氮化物晶体10的化学组成和主面1m中的穿透位错的平均密度为5×10 6 或更少; 并使基板1的主面1m与通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

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