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1. 发明专利

JP2005072572A Manufacturing method of group iii nitride crystal substrate and etchant used for the same and, group iii nitride crystal substrate and semiconductor element using the same 有权
标题翻译： III族氮化物晶体基板的制造方法及其使用的蚀刻剂，第III族氮化物晶体基板和使用其的半导体元件
公开(公告)号：JP2005072572A
公开(公告)日：2005-03-17
申请号：JP2004227097
申请日：2004-08-03
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： MINEMOTO TAKASHI , KITAOKA YASUO , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B19/00 , C30B29/38 , C30B33/10 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/308 , H01L21/338 , H01L29/812 , H01L33/06 , H01L33/22 , H01L33/32 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with projections and recesses on the surface suppressed. SOLUTION: In a process of performing surface treatment on the surface of a group III nitride crystal 11 having projections and recesses, such as pits, hillocks, facets or the like, the surface is brought into contact with a melt including at least one of an alkali metal and alkaline earth metal for meltback etching, or the melt is used for mechano-chemical polishing. Thereby, the group III nitride crystal substrate 17, with suppressed work distortion and work defects and superior planarity of surface, is manufactured. Moreover, a semiconductor element with high characteristics, for example, is obtained by using this group III nitride crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种III族氮化物晶体基板，其表面上具有突起和凹陷。解决方案：在具有凹凸，例如凹坑，小丘，小面等的III族氮化物晶体11的表面进行表面处理的过程中，使表面与至少包括至少用于回熔蚀刻的碱金属和碱土金属之一，或熔体用于机械化学抛光。因此，制造了具有抑制的工作变形和工作缺陷以及优异的表面平面性的III族氮化物晶体基板17。此外，通过使用该III族氮化物晶体基板，可获得例如具有高特性的半导体元件。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005039248A Method for manufacturing group iii nitride, method for manufacturing semiconductor substrate, group iii nitride crystal, semiconductor substrate, and electron device 有权
标题翻译：制造III族氮化物的方法，制造半导体衬底的方法，III族氮化物晶体，半导体衬底和电子器件
公开(公告)号：JP2005039248A
公开(公告)日：2005-02-10
申请号：JP2004187983
申请日：2004-06-25
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： H01L21/208 , H01L21/338 , H01L29/812 , H01L33/32 , H01L33/34 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing group III nitride crystals of high quality useful for the substrates used for a semiconductor manufacturing process. SOLUTION: A semiconductor layer 12 with a crystalline nucleus growth region 12a is formed on the surface of a semiconductor represented by a compositional formula Al u Ga v In 1-u-v N (wherein, 0≤u≤1, 0≤v≤1, u+v≤1). The crystalline nucleus growth region 12a of the semiconductor layer 12 is made in contact with a melt containing at least one of group III elements selected from a group consists of gallium, aluminum and indium and either of alkali metal or alkaline earth metal in an atmosphere containing nitrogen to grow a group III nitride crystal 13 on the layer 12. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造用于半导体制造工艺的基板的具有高质量的III族氮化物晶体的方法。解决方案：在由组成式Al表示的半导体的表面上形成具有晶核生长区域12a的半导体层12在其中，0≤u≤1,0≤v≤1，u +v≤1）。半导体层12的晶核生长区域12a与含有选自镓，铝和铟中的III族元素中的至少一种的元素的熔体接触，并且在含有碱金属或碱土金属的气氛中氮以在层12上生长III族氮化物晶体13。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005012171A Method for manufacturing group iii nitride substrate and semiconductor device 有权
标题翻译：制造III类氮化物衬底和半导体器件的方法
公开(公告)号：JP2005012171A
公开(公告)日：2005-01-13
申请号：JP2004075103
申请日：2004-03-16
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B11/06 , C30B29/38 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride substrate having a low dislocation density and a semiconductor device manufactured by the method. SOLUTION: In the method for manufacturing a group III nitride substrate, a group III element and nitrogen are reacted in an alkali metal solution in an atmosphere including nitrogen to generate and grow a crystal, a plurality of parts of a group III nitride semiconductor layer prepared in advance are selected as at least one of seed crystals for the generation and growth of a group III nitride crystal, and the surface of the seed crystal is made to come into contact with the solution. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造具有低位错密度的III族氮化物衬底和通过该方法制造的半导体器件的方法。解决方案：在制备III族氮化物衬底的方法中，III族元素和氮在包括氮的气氛中的碱金属溶液中反应以产生和生长晶体，多个III族氮化物的部分预先制备的半导体层被选择为用于产生和生长III族氮化物晶体的晶种中的至少一种，使晶种的表面与溶液接触。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2006008416A Group iii nitride crystal usable as group iii nitride substrate, method of manufacturing the same, and semiconductor device using the same 有权
标题翻译：第III组氮化物晶体可用作III类氮化物衬底，其制造方法和使用其的半导体器件
公开(公告)号：JP2006008416A
公开(公告)日：2006-01-12
申请号：JP2004159940
申请日：2004-05-28
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B19/12 , H01L21/208 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/22 , H01L33/32 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a Group III nitride crystal that is of high quality, is manufactured highly efficiently, and is useful and usable as a substrate used in a semiconductor manufacturing process. SOLUTION: The method of manufacturing the Group III nitride crystal comprises forming a first layer 11 made of a semiconductor expressed by the compositional formula: Al s Ga t In 1-s-t N (where, 0≤s≤1, 0≤t≤1, and s+t≤1); then forming a second layer 12 including more defects in a crystal structure, such as a dislocation density, than those of the first layer 11 by bringing the surface of the first layer 11 into contact with a melt containing at least one group III element selected from gallium, aluminum and indium and an alkali metal in an atmosphere including nitrogen; and forming a third layer 13, made of a semiconductor expressed by the compositional formula: Al u Ga v In 1-u-v N (where, 0≤u≤1, 0≤v≤1, and u+v≤1) and having less defects in a crystal structure than those in the second layer 12, through crystal growth in the melt in an atmosphere including nitrogen. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供高品质的III族氮化物晶体的制造方法，高效率地制造，可用作半导体制造工序中使用的基板。解决方案：制造III族氮化物晶体的方法包括形成由以下组成式表示的半导体制成的第一层11：Al SB> 1-st N（其中，0≤s≤1,0≤t≤1，s +t≤1）; 然后通过使第一层11的表面与含有至少一种选自以下的III族元素的熔体接触形成包含比第一层11的晶体结构更多的诸如位错密度的更多缺陷的第二层12 镓，铝和铟以及碱金属; 并且形成由以下组成式表示的半导体制成的第三层13：在 1-uv N中（其中， 0≤u≤1,0≤v≤1且u +v≤1），并且通过在包含氮气的气氛中的熔融物中的晶体生长，具有比第二层12中的晶体结构更少的缺陷。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005225681A Production method of group iii nitride substrate, group iii nitride substrate produced thereby, and semiconductor device and production method thereof 有权
标题翻译： III族氮化物基板，其制造的III族氮化物基板的制造方法及其半导体器件及其制造方法
公开(公告)号：JP2005225681A
公开(公告)日：2005-08-25
申请号：JP2004012415
申请日：2004-01-20
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/04 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a novel method for producing a group III nitride substrate. SOLUTION: In the production method, a mixture containing at least one group III element selected from among gallium, aluminum, and indium, an alkali metal, and a liquid nitrogen compound is melted by heating, thereby reacting the group III element with the nitrogen compound to grow a group III nitride crystal. An example of the liquid nitrogen compound is hydrazine. Preferably, the crystal is grown in a pressurized atmosphere. The mixture may contain an alkaline earth metal, e.g. calcium. The group III element is preferably gallium, and the yielded group III nitride is preferably gallium nitride. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制备III族氮化物衬底的新颖方法。解决方案：在制造方法中，通过加热熔融含有选自镓，铝和铟中的至少一种III族元素，碱金属和液氮化合物的混合物，从而使III族元素与氮化合物生长出III族氮化物晶体。液氮化合物的实例是肼。优选地，晶体在加压气氛中生长。混合物可以含有碱土金属，例如钙。 III族元素优选为镓，产生的III族氮化物优选为氮化镓。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005306709A METHOD OF MANUFACTURING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE, GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE OBTAINED BY THE METHOD, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权
标题翻译：制造GaN晶体和GaN晶体衬底的方法，通过该方法获得的GaN晶体和GaN晶体衬底以及包括其的半导体器件
公开(公告)号：JP2005306709A
公开(公告)日：2005-11-04
申请号：JP2004248866
申请日：2004-08-27
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , MORISHITA MASANORI
IPC分类号： C30B29/38 , C30B9/10 , H01L21/208 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN crystal and a GaN crystal substrate, by which the high quality GaN crystal and GaN crystal substrate can be manufactured under mild conditions of low pressure and low temperature. SOLUTION: In the method of manufacturing the GaN crystal, comprising forming the GaN crystal by reacting gallium and nitrogen in a mixed melt of gallium and sodium under a gas atmosphere containing nitrogen, the reaction of the gallium and the nitrogen is performed under a pressurizing condition that exceeds atmospheric pressure, and the pressure P1 (atm (×1.013×10 5 Pa)) of the pressurizing condition is set so as to satisfy the condition expressed by following conditional expression (I): P≤P1 5 Pa)) denotes the minimum pressure required for generating the GaN crystal at a temperature T°C of the mixed melt. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造GaN晶体和GaN晶体衬底的方法，通过该方法可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。解决方案：在制造GaN晶体的方法中，包括在含氮和氮气的气氛气氛中，通过镓和氮的混合熔融物中的镓和氮反应形成GaN晶体，镓和氮的反应在超过大气压的加压条件，加压条件的压力P1（atm（×1.013×10 5 Pa））设定为满足由以下条件式（I）表示的条件，：P≤P1<（P + 45）（I）其中，P（atm（×1.013×10 5Pa））表示在温度T°下生成GaN晶体所需的最小压力 C的混合熔体。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005263622A Method of manufacturing compound single crystal and apparatus for manufacturing it 审中-公开
标题翻译：制造化合物单晶的方法及其制造方法
公开(公告)号：JP2005263622A
公开(公告)日：2005-09-29
申请号：JP2005041711
申请日：2005-02-18
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , TAKAHASHI YASUHITO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B9/10 , C30B29/38 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound single crystal, especially a group III nitride single crystal such as potassium nitride or aluminum nitride, which method is capable of improving a growth rate and growing a single crystal with a high crystal uniformity and a large size in a short time; and an apparatus for manufacturing it. SOLUTION: The compound single crystal is grown while a raw material liquid is being stirred so that the liquid flows from a gas-liquid interface contacting with a raw material gas toward the inside of the liquid. By this stirring, the raw material gas is easily dissolved in the raw material liquid and the supersaturation is attained in a short time to improve the growth rate of the compound single crystal. Since the flow from the gas-liquid interface where the raw material gas concentration is high toward the inside of the raw material liquid where the raw material gas concentration is low, is formed and the dissolution of the raw material gas is homogenized by this mixing, ununiform nucleus formation at the gas-liquid interface is suppressed and the quality of the obtained compound single crystal is improved. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造化合物单晶，特别是氮化三氮合氮化物等III族氮化物单晶的方法，该方法能够提高生长速度并且生长单晶，在短时间内具有高晶体均匀性和大尺寸; 及其制造装置。解决方案：在搅拌原料液体的同时使化合物单晶生长，使得液体从与原料气体接触的气液界面朝向液体内部流动。通过该搅拌，原料气容易溶解在原料液中，在短时间内达到过饱和，提高了化合物单晶的生长速度。由于形成原料气体浓度低的原料气体浓度较高的原料气体浓度的气液界面的流动，并且原料气体的溶解通过该混合均匀化，抑制气 - 液界面处的不均匀核形成，提高所得复合单晶的质量。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004300024A Method for manufacturing nitride crystal of group iii element, nitride crystal of group iii element obtained by the same, and semiconductor device obtained by using the same 审中-公开
公开(公告)号：JP2004300024A
公开(公告)日：2004-10-28
申请号：JP2004081133
申请日：2004-03-19
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO , ISHIBASHI AKIHIKO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B11/06 , H01L33/06 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride crystal of a group III element by which the carrier concentration can be easily controlled, the nitride crystal of the group III element obtained by the method, and a semiconductor device obtained by using the nitride crystal. SOLUTION: The method for manufacturing the nitride crystal of the group III element includes a process for growing the crystal by reacting the group III element, nitrogen and a dopant in a melt containing an alkali metal in an atmosphere of a gas containing the nitrogen-containing gas and the dopant. As the group III element, at least one selected from, for example, Ga, Al and In can be used. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2009018961A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device 有权
标题翻译：用于生产III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2009018961A
公开(公告)日：2009-01-29
申请号：JP2007182709
申请日：2007-07-12
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA TATSU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00 , C30B33/02 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a Group III nitride crystal having a low dislocation density and a low impurity concentration without damaging the crystal. SOLUTION: Nitrogen gas (nitrogen-containing gas 3) was dissolved in a Ga-Na-Li melt 2 in a reaction vessel 7 to grow a GaN crystal having a thickness of 100 μm on a principal surface 1m of a GaN base substrate 1 (a). Subsequently, metal Na was put into the reaction vessel 7, and the resulting mixture was heated to form a Na melt which is a liquid 4 for crystal treatment, in which was dissolved nitrogen gas (nitrogen-containing gas 3) to heat-treat the GaN crystal (group III nitride crystal 10). As a result, the surface of the crystal was roughened, but the crystal itself was not broken. As for the impurity concentrations of the GaN crystal (group III nitride crystal 10) and the GaN base substrate 1, Na concentration was 5×10 15 cm -3 , which was the same as the Na concentration before heat treatment, while Li concentration was 3×10 16 cm -3 , which was significantly lower than the Li concentration before heat treatment. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种具有低位错密度和低杂质浓度的III族氮化物晶体的制造方法，而不损害晶体。解决方案：将氮气（含氮气体3）溶解在反应容器7中的Ga-Na-Li熔体2中，以在GaN基材的主表面1m上生长厚度为100μm的GaN晶体基板1（a）。随后，将金属Na放入反应容器7中，将所得混合物加热，形成作为结晶处理用液体4的Na熔体，其中为溶解氮气（含氮气体3），热处理 GaN晶体（III族氮化物晶体10）。结果，晶体的表面被粗糙化，但是晶体本身没有被破坏。对于GaN晶体（III族氮化物晶体10）和GaN基底基板1的杂质浓度，Na浓度为5×10 15×SP> -3 ，这是与热处理前的Na浓度相同，而Li浓度为3×10 16℃/ SP> -3 ，明显低于热处理前的Li浓度。版权所有（C）2009，JPO＆INPIT

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