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1. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009018961A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device 有权
标题翻译：用于生产III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2009018961A
公开(公告)日：2009-01-29
申请号：JP2007182709
申请日：2007-07-12
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA TATSU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00 , C30B33/02 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a Group III nitride crystal having a low dislocation density and a low impurity concentration without damaging the crystal. SOLUTION: Nitrogen gas (nitrogen-containing gas 3) was dissolved in a Ga-Na-Li melt 2 in a reaction vessel 7 to grow a GaN crystal having a thickness of 100 μm on a principal surface 1m of a GaN base substrate 1 (a). Subsequently, metal Na was put into the reaction vessel 7, and the resulting mixture was heated to form a Na melt which is a liquid 4 for crystal treatment, in which was dissolved nitrogen gas (nitrogen-containing gas 3) to heat-treat the GaN crystal (group III nitride crystal 10). As a result, the surface of the crystal was roughened, but the crystal itself was not broken. As for the impurity concentrations of the GaN crystal (group III nitride crystal 10) and the GaN base substrate 1, Na concentration was 5×10 15 cm -3 , which was the same as the Na concentration before heat treatment, while Li concentration was 3×10 16 cm -3 , which was significantly lower than the Li concentration before heat treatment. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种具有低位错密度和低杂质浓度的III族氮化物晶体的制造方法，而不损害晶体。解决方案：将氮气（含氮气体3）溶解在反应容器7中的Ga-Na-Li熔体2中，以在GaN基材的主表面1m上生长厚度为100μm的GaN晶体基板1（a）。随后，将金属Na放入反应容器7中，将所得混合物加热，形成作为结晶处理用液体4的Na熔体，其中为溶解氮气（含氮气体3），热处理 GaN晶体（III族氮化物晶体10）。结果，晶体的表面被粗糙化，但是晶体本身没有被破坏。对于GaN晶体（III族氮化物晶体10）和GaN基底基板1的杂质浓度，Na浓度为5×10 15×SP> -3 ，这是与热处理前的Na浓度相同，而Li浓度为3×10 16℃/ SP> -3 ，明显低于热处理前的Li浓度。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2010100449A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010100449A
公开(公告)日：2010-05-06
申请号：JP2008271136
申请日：2008-10-21
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： MORISHITA MASANORI , UEMATSU KOJI , TANAKA HARUKO , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which a group III nitride crystal having low dislocation density is grown with satisfactory reproducibility even if the crystal growth speed is decreased.
SOLUTION: The method for growing a group III nitride crystal 10 is based on a liquid phase method, and includes a process for preparing a ground substrate 1 and a process for growing the group III nitride crystal 10 on the main surface 1m of the ground substrate by bringing a solution 6, obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with the main surface 1m. In the process for growing the group III nitride crystal 10, the crystal growth speed is gradually increased from 0 μm/hr at a speed change rate of ≤1 μm/hr
2 .
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长III族氮化物晶体的方法，即使晶体生长速度降低，通过该方法可以以令人满意的再现性生长具有低位错密度的III族氮化物晶体。解决方案：用于生长III族氮化物晶体10的方法基于液相法，并且包括制备接地衬底1的方法和用于在III族氮化物晶体10的主表面1m上生长III族氮化物晶体10的方法通过将含有氮的气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液6与基底表面1m接触而形成基底。在生长III族氮化物晶体10的过程中，晶体生长速度以≤1μm/ hr 2 的速度变化率从0μm/ hr逐渐增加。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2005350291A Group iii nitride crystal, its producing method, group iii nitride crystal substrate, and semiconductor device 有权
标题翻译： III类硝酸盐晶体，其制造方法，III类氮化物晶体基板和半导体器件
公开(公告)号：JP2005350291A
公开(公告)日：2005-12-22
申请号：JP2004171452
申请日：2004-06-09
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , NAKAHATA SEIJI , HIROTA TATSU
IPC分类号： C30B29/38 , C30B9/00 , C30B9/10 , C30B11/00 , C30B11/06 , C30B29/40 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a low dislocation density; and a method for producing the same.
SOLUTION: The method for producing the group III nitride crystal includes a process for preparing a seed crystal 10 and a process for growing a first group III nitride crystal 21 on the seed crystal 10 by a liquid phase method. In the process for growing the first group III nitride crystal 21 on the seed crystal 10, the crystal growth speed V
H in the direction parallel to the principal plane 10h of the seed crystal 10 is set to be higher than the crystal growth speed V
V in the direction vertical to the principal plane 10h of the seed crystal 10. The group III nitride crystal produced by the method has a dislocation density in the plane parallel to the principal plane 10h of the seed crystal 10 of ≤5×10
6 pieces/cm
2 .
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有低位错密度的III族氮化物晶体; 及其制造方法。解决方案：用于制备III族氮化物晶体的方法包括制备晶种10的方法和通过液相法在晶种10上生长第一III族氮化物晶体21的工艺。在晶种10上生长第一III族氮化物晶体21的过程中，将晶种10的主平面10h平行的方向的晶体生长速度V SB 在晶种10的主平面10h的垂直方向上的晶体生长速度V SB 。通过该方法制造的III族氮化物晶体在平行于主平面的平面中具有位错密度晶种10的10h≤5×10 6 个/ cm 2 。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005194146A Production method for group iii nitride crystal 审中-公开
标题翻译：第III类氮化物晶体的生产方法
公开(公告)号：JP2005194146A
公开(公告)日：2005-07-21
申请号：JP2004003260
申请日：2004-01-08
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , HIROTA TATSU
IPC分类号： C30B29/38 , C30B11/00 , C30B11/12 , C30B19/02 , C30B29/40 , H01L21/208
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal at an increased growth rate.
SOLUTION: The production method for a group III nitride crystal causes the crystal to grow by bringing a melt 7 containing a group III element and an alkali metal into contact with nitrogen plasma 8a. In the method, the minimum distance X between the surface of the melt 7 and the surface of a substrate 10 is preferably 50 mm or less.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供以增加的生长速率生产III族氮化物晶体的方法。解决方案：通过使含有III族元素和碱金属的熔体7与氮等离子体8a接触，III族氮化物晶体的制造方法使晶体生长。在该方法中，熔融体7的表面与基板10的表面之间的最小距离X优选为50mm以下。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2011231013A Method for producing group iii nitride crystal and group iii nitride crystal substrate 有权
标题翻译：生产III类氮化物晶体和III族氮化物晶体基板的方法
公开(公告)号：JP2011231013A
公开(公告)日：2011-11-17
申请号：JP2011185092
申请日：2011-08-26
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA RYU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for producing group III nitride crystal and a group III nitride crystal substrate, where the surface dislocation density of a ground substrate is reduced and group III nitride crystal having a low dislocation density and high crystallinity is grown on the ground substrate.SOLUTION: The method for producing group III nitride crystal wherein group III nitride crystal 20 is grown by making a group III element and nitrogen react in a solution 3, includes: a process to meltback a surface layer 10a of the ground substrate 10 where at least the surface layer 10a and a surface side portion 10b adjacent to the surface layer 10a are formed by the group III nitride crystal; a process to grow the group III nitride crystal 20 on the meltbacked ground substrate 10; and a process to make the number of crystal meltback growing cycles to one or more cycles, meltbacking of the surface layer 20a of the group III nitride crystal 20 and growing of the group III nitride crystal 20 forming one cycle.
摘要翻译：要解决的问题：提供一种制造III族氮化物晶体和III族氮化物晶体基板的方法，其中接地衬底的表面位错密度降低，并且具有低位错密度和高结晶度的III族氮化物晶体在地基底上生长。解决方案：其中通过使III族元素和氮在溶液3中反应而生长III族氮化物晶体的方法包括：将基底10的表面层10a熔化的方法其中至少表面层10a和与表面层10a相邻的表面侧部分10b由III族氮化物晶体形成; 在熔融接地基板10上生长III族氮化物晶体20的工艺; 以及使晶体回熔生长周期数达到一个或多个循环，使III族氮化物晶体20的表面层20a回熔和形成一个循环的III族氮化物晶体20的生长的方法。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2010077022A Group iii nitride crystal substrate, method for producing the same, and group iii nitride semiconductor device 审中-公开
标题翻译： III族氮化物晶体基板，其制造方法和III族氮化物半导体器件
公开(公告)号：JP2010077022A
公开(公告)日：2010-04-08
申请号：JP2009271689
申请日：2009-11-30
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , HIROTA RYU , NAKAHATA SEIJI
IPC分类号： C30B29/38 , C30B9/00 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate small in light absorption coefficient, to provide a method for producing the same, and to provide a group III nitride semiconductor device. SOLUTION: The method for producing the group III nitride crystal substrate includes: a process for introducing an alkali metal element-containing substance 1, a group III element-containing substance 2, and a nitrogen element-containing substance 3 into a reaction vessel 51; a process for forming a melt 5 containing at least an alkali metal element, a group III element, and a nitrogen element in the reaction vessel 51; and a process for growing a group III nitride crystal 6 from the melt 5. In the process for growing the group III nitride crystal 6 from the melt 5, the growth temperature of the group III nitride crystal is set to be ≥880°C. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有小的光吸收系数的III族氮化物晶体基板，以提供其制造方法，并提供III族氮化物半导体器件。解决方案：III族氮化物晶体衬底的制造方法包括：将含有碱金属元素的物质1，含III族元素的物质2和含氮元素的物质3引入反应中的方法船51 在反应容器51中形成至少含有碱金属元素，III族元素和氮元素的熔体5的工序; 以及从熔体5生长III族氮化物晶体6的工序。在从熔融体5生长III族氮化物晶体6的工序中，将III族氮化物晶体的生长温度设定为≥880℃。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010024089A Growth apparatus and growth method of group iii nitride crystal 有权
标题翻译：第三组氮化物晶体的生长装置和生长方法
公开(公告)号：JP2010024089A
公开(公告)日：2010-02-04
申请号：JP2008186976
申请日：2008-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： UEMATSU KOJI , MORISHITA MASANORI , TANAKA HARUKO , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a growth apparatus and a growth method of a group III nitride crystal capable of stably growing a high quality group III nitride crystal. SOLUTION: The growth apparatus of the group III nitride crystal by a liquid phase method comprises a reaction vessel 120 for housing a solvent 132 containing a group III metal and an alkaline metal, a pressure vessel 110 for housing the reaction vessel 120, a nitrogen-containing gas supplying device 180 for supplying the nitrogen-containing gas to the reaction vessel 120 and the pressure vessel 110, first piping 122 for introducing the nitrogen-containing gas from the nitrogen-containing gas supplying device 180 to the pressure vessel 110 and second piping 124 for introducing the nitrogen-containing gas from a first part 122s in mid-way of the first piping 122 to the reaction vessel 120. At a growing step of the group III nitride crystal, the inner pressure of the reaction vessel and the inner pressure of the pressure vessel are controlled by the nitrogen-containing gas by supplying the nitrogen-containing gas of the amount consumed by growth of the group III nitride crystal by using a pressure controlling vessel 116p and a flow rate controlling vessel 122f. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够稳定生长高质量III族氮化物晶体的III族氮化物晶体的生长装置和生长方法。解决方案：通过液相法的III族氮化物晶体的生长装置包括用于容纳含有III族金属和碱金属的溶剂132的反应容器120，用于容纳反应容器120的压力容器110，用于将含氮气体供给到反应容器120和压力容器110的含氮气体供给装置180，用于将含氮气体从含氮气体供给装置180导入压力容器110的第一配管122 以及用于将含氮气体从第一管道122的中途的第一部分122s引入反应容器120的第二管道124.在III族氮化物晶体的生长步骤中，反应容器的内部压力和通过使用含有III族氮化物晶体生长消耗的量的含氮气体，通过含氮气体来控制压力容器的内部压力 g压力控制容器116p和流量控制容器122f。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009155128A Group iii nitride crystal growth apparatus and growth method 有权
标题翻译：第III组氮化物晶体生长装置和生长方法
公开(公告)号：JP2009155128A
公开(公告)日：2009-07-16
申请号：JP2007332277
申请日：2007-12-25
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： YAMASHITA MASASHI , HIROTA TATSU , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of group III nitride crystal which can prevent the reduction in physical property of the group III nitride crystal by preventing a residue gas in the dead space of the piping and an atmosphere gas in a pressurized container from being included into a reaction vessel, and a manufacturing method. SOLUTION: The group III nitride crystal growth apparatus is provided with a reaction vessel 1, a pressurized container 5 that encloses the reaction vessel 1, a device 7 for supplying a nitrogen raw material gas, a vacuum exhausting device 8, a first piping 10 that connects the reaction vessel 1 with the device 7 for supplying a nitrogen raw material gas through the wall of the pressurized container 5, a first valve 11 that is formed outside the pressurized container 5 and midway of the first piping 10, and a second piping 20 that connects a pipe 10b between the device 7 for supplying a nitrogen raw material gas and the first valve 11 of the first piping 10 with the vacuum exhausting device 8. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种III族氮化物晶体的制造装置，其可以通过防止管道的死空间中的残留气体以及管道中的气氛气体来防止III族氮化物晶体的物理性能的降低加压容器被包括在反应容器中，以及制造方法。解决方案：III族氮化物晶体生长装置设置有反应容器1，包围反应容器1的加压容器5，用于供给氮原料气体的装置7，真空排气装置8，第一将反应容器1与用于通过加压容器5的壁供给氮原料气体的装置7连接的管道10，形成在加压容器5的外侧和第一配管10的中途的第一阀11，将用于供给氮原料气体的装置7与第一配管10的第一阀11之间的配管10b与真空排气装置8连接的第二配管20.版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2009132548A Growth apparatus and growth method of group iii nitride crystal 有权
标题翻译：第三组氮化物晶体的生长装置和生长方法
公开(公告)号：JP2009132548A
公开(公告)日：2009-06-18
申请号：JP2007309003
申请日：2007-11-29
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： YAMASHITA MASASHI , HIROTA TATSU , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and a manufacturing method of a group III nitride crystal which prevents mingling of residual gases in dead spaces of piping and an atmospheric gas in a reactor vessel into the reactor vessel and prevents degradation of physical properties of the group III nitride crystal.
SOLUTION: The manufacturing apparatus of the group III nitride crystal comprises first piping 10 to connect the reactor vessel 1 and a nitrogen raw material gas supply apparatus 7, second piping 20 to connect the first piping 10 and a first evacuating apparatus 8, and a first airtight partition 11d formed halfway in the first piping 10. The reactor vessel 1 is made airtight by the first airtight partition 11d. When the interior of the first and the second piping 10, 20 is evacuated, or when a nitrogen raw material gas 9 is supplied into the reactor vessel 1, the airtightness of the first airtight partition 11d of the first piping 10 is broken by a pressure difference between the reactor vessel 1 side and the nitrogen raw material gas supply apparatus 7 side.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种III族氮化物晶体的制造装置和制造方法，其防止管道的死空间中的残余气体和反应器容器中的大气气体混入反应器容器中，并防止 III族氮化物晶体的物理性质。解决方案：III族氮化物晶体的制造装置包括连接反应容器1和氮原料气体供给装置7的第一管道10，连接第一管道10和第一排气装置8的第二管道20，以及在第一管道10的中途形成的第一气密分隔壁11d。反应容器1由第一气密分隔壁11d形成为气密的。当第一和第二管道10,20的内部被排空时，或者当将氮原料气体9供应到反应容器1中时，第一管道10的第一气密隔断11d的气密被压力反应容器1侧和氮原料气体供给装置7侧的差。版权所有（C）2009，JPO＆INPIT

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