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1. 发明申请

US20060243389A1 Substrate processing apparatus and method, and program and storage medium 有权
标题翻译：基板处理装置和方法以及程序和存储介质
公开(公告)号：US20060243389A1
公开(公告)日：2006-11-02
申请号：US11410120
申请日：2006-04-25
申请人： Yusuke Hirayama , Kazuya Nagaseki
发明人： Yusuke Hirayama , Kazuya Nagaseki
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01J37/321 , H01J37/32623 , H01L21/3065
摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.
摘要翻译：基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。屏蔽构件具有通孔。该方法包括通过等离子体源径向漫射等离子体的步骤。

2. 发明授权

US08821683B2 Substrate processing apparatus and method, and program and storage medium 有权
标题翻译：基板处理装置和方法以及程序和存储介质
公开(公告)号：US08821683B2
公开(公告)日：2014-09-02
申请号：US11410120
申请日：2006-04-25
申请人： Yusuke Hirayama , Kazuya Nagaseki
发明人： Yusuke Hirayama , Kazuya Nagaseki
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/321 , H01J37/32623 , H01L21/3065
摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.
摘要翻译：基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。屏蔽构件具有通孔。该方法包括通过等离子体源径向漫射等离子体的步骤。

3. 发明申请

US20120238098A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120238098A1
公开(公告)日：2012-09-20
申请号：US13512372
申请日：2010-11-17
申请人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
发明人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/308
CPC分类号： H01L21/3065
摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
摘要翻译：通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜，第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

4. 发明授权

US08975191B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US08975191B2
公开(公告)日：2015-03-10
申请号：US13983826
申请日：2012-02-07
申请人： Kazuhito Tohnoe , Yusuke Hirayama , Yasuyoshi Ishiyama , Wataru Hashizume
发明人： Kazuhito Tohnoe , Yusuke Hirayama , Yasuyoshi Ishiyama , Wataru Hashizume
IPC分类号： H01L21/3065 , H01L21/768 , H01L21/308
CPC分类号： H01L21/3065 , H01J2237/334 , H01L21/3086 , H01L21/76898
摘要： There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.
摘要翻译：提供了一种等离子体蚀刻方法，其包括蚀刻含有硅和氮的中间层并位于形成在基板的表面上的抗蚀剂掩模下方的第一工艺，以使位于中间层下方的硅层暴露通过抗蚀剂掩模和中间层的第二工序，随后向基板供给氯气以使反应产物附着在抗蚀剂掩模和中间层的开口部分的侧壁上的第二工艺，以及蚀刻部分使用含硫和氟的工艺气体对应于中间层的开口部分的硅层，以在硅层中形成凹陷。

5. 发明授权

US08664117B2 Method for manufacturing semiconductor device using anisotropic etching 有权
标题翻译：使用各向异性蚀刻制造半导体器件的方法
公开(公告)号：US08664117B2
公开(公告)日：2014-03-04
申请号：US13582536
申请日：2011-03-04
申请人： Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
发明人： Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
IPC分类号： H01L21/44
CPC分类号： H01L23/5226 , H01L21/31138 , H01L21/76831 , H01L21/76898 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.
摘要翻译：提供了一种通过形成垂直形状的孔来实现小型化的半导体器件制造方法，其能够与常规方法相比能够减少工艺数量并且能够提高生产率。半导体器件制造方法包括：在衬底中形成孔; 在孔内形成聚酰亚胺膜; 各向异性地蚀刻基板，而不使用覆盖孔内的聚酰亚胺膜的侧壁部分的掩模，并且在聚酰亚胺膜的侧壁部分保留在孔内时，去除孔内的聚酰亚胺膜的底部的至少一部分; 并用导电金属填充孔。

6. 发明授权

US07405162B2 Etching method and computer-readable storage medium 失效
标题翻译：蚀刻方法和计算机可读存储介质
公开(公告)号：US07405162B2
公开(公告)日：2008-07-29
申请号：US11231979
申请日：2005-09-22
申请人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
发明人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
IPC分类号： H01L21/302
CPC分类号： H01L21/32132
摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.
摘要翻译：蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。

7. 发明申请

US20140134846A1 PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻法
公开(公告)号：US20140134846A1
公开(公告)日：2014-05-15
申请号：US14131704
申请日：2012-07-10
申请人： Yusuke Hirayama , Kazuhito Tohnoe
发明人： Yusuke Hirayama , Kazuhito Tohnoe
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3266 , H01L21/30655 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/76898
摘要： A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a predetermined pattern. The method includes a first depositing step (S11) of depositing a protective film on a surface of the silicon oxide film using a second processing gas containing carbon monoxide gas, a first etching step (S12) of etching the silicon layer using the first processing gas, a second depositing step (S13) of depositing the protective film on a side wall of a hole etched by the first etching step using the second processing gas, and a second etching step (S14) of further etching the silicon layer using the first processing gas. The second depositing step (S13) and the second etching step (S14) are alternately repeated at least two times each.
摘要翻译：提供了一种等离子体蚀刻方法，用于使用第一处理气体形成孔，以蚀刻包括形成为预定图案的氧化硅膜的待处理衬底的硅层。该方法包括使用含有一氧化碳气体的第二处理气体在氧化硅膜的表面上沉积保护膜的第一沉积步骤（S11），使用第一处理气体蚀刻硅层的第一蚀刻步骤（S12），第二沉积步骤（S13），其使用第二处理气体将保护膜沉积在通过第一蚀刻步骤蚀刻的孔的侧壁上;以及第二蚀刻步骤（S14），使用第一处理进一步蚀刻硅层加油站。第二沉积步骤（S13）和第二蚀刻步骤（S14）交替重复至少两次。

8. 发明申请

US20060289296A1 Plasma processing method and high-rate plasma etching apparatus 有权
标题翻译：等离子体处理方法和高速等离子体蚀刻装置
公开(公告)号：US20060289296A1
公开(公告)日：2006-12-28
申请号：US11473052
申请日：2006-06-23
申请人： Koji Maruyama , Yusuke Hirayama
发明人： Koji Maruyama , Yusuke Hirayama
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L21/67069 , B81C1/00531 , B81C2201/0132 , H01J37/32568 , H01J37/32935
摘要： A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 μm.
摘要翻译：一种等离子体处理方法，其用于具有安装台和顶板的等离子体处理装置的处理室中，在安装台和顶棚部之间形成有等离子体处理空间，包括将目标物体安装在将顶棚部分和安装台之间的间隙设定为大于约25mm且小于约65mm，并且通过在处理空间中产生等离子体对目标物体进行等离子体处理。目标物体包括具有开口的开口图案，并且至少部分开口等于或大于约500μm。

9. 发明申请

US20060063385A1 Etching method and computer-readable storage medium 失效
标题翻译：蚀刻方法和计算机可读存储介质
公开(公告)号：US20060063385A1
公开(公告)日：2006-03-23
申请号：US11231979
申请日：2005-09-22
申请人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
发明人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32132
摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.
摘要翻译：蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。

10. 发明授权

US08716144B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08716144B2
公开(公告)日：2014-05-06
申请号：US13512372
申请日：2010-11-17
申请人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
发明人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/302
CPC分类号： H01L21/3065
摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
摘要翻译：通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜，第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

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