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1. 发明申请

US20120238098A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120238098A1
公开(公告)日：2012-09-20
申请号：US13512372
申请日：2010-11-17
申请人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
发明人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/308
CPC分类号： H01L21/3065
摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
摘要翻译：通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜，第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

2. 发明授权

US08716144B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08716144B2
公开(公告)日：2014-05-06
申请号：US13512372
申请日：2010-11-17
申请人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
发明人： Shuichiro Uda , Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/302
CPC分类号： H01L21/3065
摘要： A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiF4 and O2 with the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF6, O2, and HBr after the first etching step.
摘要翻译：通过使用形成在基板上的光致抗蚀剂膜来制造用于在基板中形成深孔的半导体器件的方法包括：将蚀刻室内的基板定位的定位步骤，所述基板具有包括形成在其上的开口部的光致抗蚀剂膜，第一蚀刻步骤，通过使用至少包含SiF 4和O 2的第一混合气体与光致抗蚀剂膜作为掩模，在位于蚀刻室内的基板上进行等离子体蚀刻;以及第二蚀刻步骤，通过执行在基板中形成孔在第一蚀刻步骤之后通过使用至少包括SF 6，O 2和HBr的第二混合气体在衬底上进行等离子体蚀刻。

3. 发明申请

US20140113450A1 PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻法
公开(公告)号：US20140113450A1
公开(公告)日：2014-04-24
申请号：US14125363
申请日：2012-06-12
申请人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
发明人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32165 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/3081 , H01L21/32132 , H01L21/32137 , H01L21/67069 , H01L21/76898
摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
摘要翻译：等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从使用抗蚀剂层作为掩模的蚀刻气体。等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。

4. 发明授权

US09048191B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09048191B2
公开(公告)日：2015-06-02
申请号：US14125363
申请日：2012-06-12
申请人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
发明人： Shuichiro Uda , Takaaki Nezu , Shinji Fuchigami , Koji Maruyama
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/3213 , H01J37/32 , H01L21/768 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32165 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J2237/334 , H01L21/30655 , H01L21/308 , H01L21/3081 , H01L21/32132 , H01L21/32137 , H01L21/67069 , H01L21/76898
摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.
摘要翻译：等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从使用抗蚀剂层作为掩模的蚀刻气体。等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。

5. 发明申请

US20060289296A1 Plasma processing method and high-rate plasma etching apparatus 有权
标题翻译：等离子体处理方法和高速等离子体蚀刻装置
公开(公告)号：US20060289296A1
公开(公告)日：2006-12-28
申请号：US11473052
申请日：2006-06-23
申请人： Koji Maruyama , Yusuke Hirayama
发明人： Koji Maruyama , Yusuke Hirayama
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L21/67069 , B81C1/00531 , B81C2201/0132 , H01J37/32568 , H01J37/32935
摘要： A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 μm.
摘要翻译：一种等离子体处理方法，其用于具有安装台和顶板的等离子体处理装置的处理室中，在安装台和顶棚部之间形成有等离子体处理空间，包括将目标物体安装在将顶棚部分和安装台之间的间隙设定为大于约25mm且小于约65mm，并且通过在处理空间中产生等离子体对目标物体进行等离子体处理。目标物体包括具有开口的开口图案，并且至少部分开口等于或大于约500μm。

6. 发明申请

US20060063385A1 Etching method and computer-readable storage medium 失效
标题翻译：蚀刻方法和计算机可读存储介质
公开(公告)号：US20060063385A1
公开(公告)日：2006-03-23
申请号：US11231979
申请日：2005-09-22
申请人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
发明人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32132
摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.
摘要翻译：蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。

7. 发明授权

US07682978B2 Plasma processing method and high-rate plasma etching apparatus 有权
标题翻译：等离子体处理方法和高速等离子体蚀刻装置
公开(公告)号：US07682978B2
公开(公告)日：2010-03-23
申请号：US11473052
申请日：2006-06-23
申请人： Koji Maruyama , Yusuke Hirayama
发明人： Koji Maruyama , Yusuke Hirayama
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67069 , B81C1/00531 , B81C2201/0132 , H01J37/32568 , H01J37/32935
摘要： A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 μm.
摘要翻译：一种等离子体处理方法，其用于具有安装台和顶板的等离子体处理装置的处理室中，在安装台和顶棚部之间形成有等离子体处理空间，包括将目标物体安装在将顶棚部分和安装台之间的间隙设定为大于约25mm且小于约65mm，并且通过在处理空间中产生等离子体对目标物体进行等离子体处理。目标物体包括具有开口的开口图案，并且至少部分开口等于或大于约500μm。

8. 发明授权

US07405162B2 Etching method and computer-readable storage medium 失效
标题翻译：蚀刻方法和计算机可读存储介质
公开(公告)号：US07405162B2
公开(公告)日：2008-07-29
申请号：US11231979
申请日：2005-09-22
申请人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
发明人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
IPC分类号： H01L21/302
CPC分类号： H01L21/32132
摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.
摘要翻译：蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。

9. 发明授权

US08787728B2 Data reproduction apparatus and data reproduction control method 失效
公开(公告)号：US08787728B2
公开(公告)日：2014-07-22
申请号：US12538011
申请日：2009-08-07
申请人： Koji Maruyama , Mitsutaka Kuwabara , Satoshi Kataoka
发明人： Koji Maruyama , Mitsutaka Kuwabara , Satoshi Kataoka
IPC分类号： H04N5/765
CPC分类号： G11B27/105 , H04N7/012 , H04N21/2393 , H04N21/440218 , H04N21/4621 , H04N21/482
摘要： According to one embodiment, a data reproduction apparatus comprises a reproduction module configured to reproduce image data, a resolution selection module configured to select one of resolutions, an image quality mode selection module configured to select on or off state of an image quality mode, a selection disable module configured to disable the resolution selection module to select a prescribed resolution when the image quality mode selection module selects the on state of the image quality mode, and an image processor configured to improve a quality of the image data reproduced by the reproduction module in accordance with the resolution selected by the resolution selection module when the image quality mode selection module selects the on state of the image quality mode.

10. 发明申请

US20120056360A1 Process for producing metal composite material 审中-公开
标题翻译：金属复合材料生产工艺
公开(公告)号：US20120056360A1
公开(公告)日：2012-03-08
申请号：US13199747
申请日：2011-09-08
申请人： Makoto Fujita , Koji Maruyama , Ikuo Suzuki
发明人： Makoto Fujita , Koji Maruyama , Ikuo Suzuki
IPC分类号： C04B35/10
CPC分类号： C04B41/5155 , C04B38/009 , C04B41/009 , C04B41/88 , C04B35/10 , C04B38/00 , C04B41/4523 , C04B41/457
摘要： Producing a metal composite material by mixing hydrated ceramic particles, having water of crystallization that is bound within fine pores which have an average pore diameter of 1 nm or more and 80 nm or less, with a reinforcing material, the resulting mixture being sintered to form a preform which is then impregnated with a melt of an aluminum alloy and subjected to surface polishing. The ceramic particles, from which water of crystallization has been removed while the average pore diameter of the pores thereof is maintained, are dispersed uniformly, it is possible to obtain the metal composite material in which the ceramic particles that have fine pores are exposed on surfaces evenly in a stable manner by surface polishing that is conducted after the melt impregnation. The metal composite material can permit infiltration of a lubricating oil into the fine pores.
摘要翻译：通过将具有结晶的水结合的水合陶瓷颗粒与平均孔径为1nm以上且80nm以下的细孔混合，形成金属复合材料，所得到的混合物被烧结而形成预制件，然后用铝合金熔体浸渍并进行表面抛光。在保持结晶孔的平均孔径的同时除去了结晶水的陶瓷颗粒被均匀地分散，可以获得具有细孔的陶瓷颗粒暴露在表面上的金属复合材料通过在熔融浸渍之后进行的表面抛光以均匀的方式均匀。金属复合材料可以允许润滑油渗透到细孔中。

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