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1. 发明申请

US20060208264A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 审中-公开
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20060208264A1
公开(公告)日：2006-09-21
申请号：US11439127
申请日：2006-05-24
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L33/00 , H01L27/15 , H01L29/167 , H01L31/12
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

2. 发明申请

US20050208686A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20050208686A1
公开(公告)日：2005-09-22
申请号：US10875321
申请日：2004-06-25
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L21/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

3. 发明申请

US20050179045A1 Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof 审中-公开
标题翻译：具有改善的欧姆接触结构的氮化物半导体发光二极管及其制造方法
公开(公告)号：US20050179045A1
公开(公告)日：2005-08-18
申请号：US10857932
申请日：2004-06-02
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park
IPC分类号： H01L29/22 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed is a nitride semiconductor LED and a fabrication method thereof. An n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p+-doped semiconductor layer are formed in their order on a substrate. A resultant semiconductor structure is mesa-etched to expose a partial area of the n-doped semiconductor layer. The p+-doped semiconductor layer and the exposed area of the n-doped semiconductor layer are n-doped at a high concentration to form first and second n+-doped regions, respectively. P- and n-electrodes are formed on the first and second n+-doped regions, respectively. Then, reverse bias is created to improve an ohmic contact structure between a semiconductor layer and a metal electrode thereby lowering drive voltage while raising overvoltage resistance and luminance.
摘要翻译：公开了一种氮化物半导体LED及其制造方法。在衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p + +掺杂半导体层。对所得半导体结构进行台面蚀刻以暴露n掺杂半导体层的部分区域。掺杂p +的掺杂半导体层和n掺杂半导体层的暴露面积以高浓度n掺杂以形成第一和第二n + +掺杂区域，分别。 P-和n-电极分别形成在第一和第二n + + - 掺杂区域上。然后，产生反向偏压以改善半导体层和金属电极之间的欧姆接触结构，从而降低驱动电压，同时提高过电压和亮度。

4. 发明申请

US20060091754A1 Motor, method for manufacturing field magnet assembly of the same, and washing machine with the same 审中-公开
标题翻译：电机，制造现场磁铁总成的方法和洗衣机一样
公开(公告)号：US20060091754A1
公开(公告)日：2006-05-04
申请号：US11202163
申请日：2005-08-12
申请人： Young Kim , Byung Kim , Sung Lee , Deok Kim , Jin Park
发明人： Young Kim , Byung Kim , Sung Lee , Deok Kim , Jin Park
IPC分类号： H02K21/12
CPC分类号： H02K15/03 , H02K1/02 , H02K1/2786 , H02K21/22
摘要： A motor has a field magnet assembly comprising a plurality of magnets arranged in the circumferential direction of the field magnet assembly such that like polarities face each other, and a plurality of magnet spacers disposed between the magnets, respectively. Consequently, leakage of magnetic flux of the field magnet assembly is minimized, and torque is improved as compared to a conventional motor having the same stacking and capacity. In a washing machine with the motor, the magnets and the magnet spacers are integrally attached to the outer tub of the washing machine. Consequently, the size of the washing machine is minimized. The sizes of the inner and outer tubs are increased when the washing machine according to the present invention has the same size as the conventional washing machine. Consequently, the capacity of the washing machine is increased.
摘要翻译：电动机具有场磁体组件，其包括沿场磁体组件的圆周方向布置的多个磁体，使得相同的极性彼此面对，并且分别设置在磁体之间的多个磁体间隔件。因此，与具有相同层叠和容量的常规电动机相比，场磁体组件的磁通量的泄漏最小化，并且转矩提高。在具有电动机的洗衣机中，磁体和磁体间隔件一体地附接到洗衣机的外桶。因此，洗衣机的尺寸最小化。当根据本发明的洗衣机具有与常规洗衣机相同的尺寸时，内桶和外桶的尺寸增加。因此，洗衣机的容量增加。

5. 发明申请

US20060061228A1 Flux concentrated-type motor 审中-公开
标题翻译：磁通集中式电机
公开(公告)号：US20060061228A1
公开(公告)日：2006-03-23
申请号：US11202160
申请日：2005-08-12
申请人： Sung Lee , Jin Park , Young Kim , Deok Kim
发明人： Sung Lee , Jin Park , Young Kim , Deok Kim
IPC分类号： H02K7/00 , H02K1/27
CPC分类号： H02K1/2773 , H02K21/16
摘要： A flux concentration-type motor includes a ring-shaped stator, in which coils are wound on a plurality of teeth radially arranged; and a rotor, located at the center of the stator, having a plurality of magnets arranged in a circumferential direction such that poles, having the same polarity, of the magnets face each other, and rotated by the interaction with the stator, so as to prevent the leakage of magnetic flux of the magnets, thereby improving the torque compared to a conventional surface mounted permanent magnet-type motor having the same volume, reducing the production costs, and facilitating the miniaturization of products.
摘要翻译：磁通集中型电动机包括环形定子，其中线圈被卷绕在径向布置的多个齿上; 以及位于定子中心的转子，具有沿圆周方向布置的多个磁体，使得磁体具有相同极性的磁体彼此面对并通过与定子的相互作用而旋转，以便防止磁体的磁通量的泄漏，从而与具有相同体积的传统的表面安装的永久磁铁式电动机相比提高扭矩，降低生产成本，并且有助于产品的小型化。

6. 发明申请

US20050200225A1 Motor for washing machine 有权
标题翻译：电动洗衣机
公开(公告)号：US20050200225A1
公开(公告)日：2005-09-15
申请号：US10911690
申请日：2004-08-05
申请人： Deok Kim , Young Kim , Sung Lee , Jin Park , Jang Shim
发明人： Deok Kim , Young Kim , Sung Lee , Jin Park , Jang Shim
IPC分类号： D06F37/30 , H02K1/00 , H02K1/06 , H02K1/12 , H02K1/14 , H02K1/18 , H02K3/32 , H02K5/16 , H02K15/02
CPC分类号： H02K1/146 , H02K1/187 , H02K15/026
摘要： A motor for a washing machine includes a stator core having one or more bolt thru holes. A stator assembly having the stator core is directly coupled to a bearing housing using the bolt thru holes.
摘要翻译：一种用于洗衣机的电动机包括具有一个或多个螺栓通孔的定子芯。具有定子芯的定子组件使用螺栓通孔直接联接到轴承壳体。

7. 发明申请

US20060061226A1 Permanent magnet-type motor 审中-公开
标题翻译：永磁式电动机
公开(公告)号：US20060061226A1
公开(公告)日：2006-03-23
申请号：US11202164
申请日：2005-08-12
申请人： Deok Kim , Young Kim , Jin Park
发明人： Deok Kim , Young Kim , Jin Park
IPC分类号： H02K1/27
CPC分类号： H02K1/278
摘要： A permanent magnet-type motor includes a stator, on which coils are wound; and a rotor located on the inside of the stator, and having a plurality of magnet pairs arranged at positions thereof corresponding to the stator, each magnet pair including a high-energy magnet having a high residual magnetic flux density or a high amount of energy and low-energy magnets having a low residual magnetic flux density or a low amount of energy, thereby limiting the increase of the material costs of the magnets, improving the torque of the motor, and increasing the capacity of the motor.
摘要翻译：一种永久磁铁式电动机，包括绕线圈的定子; 以及位于所述定子内侧的转子，具有配置在与所述定子对应的位置的多个磁体对，每个磁体对包括具有高剩余磁通密度或高能量的高能磁体，具有低残余磁通密度或低能量能量的低能量磁体，从而限制了磁体的材料成本的增加，改善了电动机的转矩以及提高了电动机的容量。

8. 发明授权

US10113022B2 Photoresist polymers and methods of forming patterns 有权
公开(公告)号：US10113022B2
公开(公告)日：2018-10-30
申请号：US14804775
申请日：2015-07-21
申请人： Jin Park , Hyun-Woo Kim
发明人： Jin Park , Hyun-Woo Kim
IPC分类号： G03F7/004 , C08F214/14 , C08F214/16 , C08F214/18 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/34 , C08G75/26 , G03F7/039
摘要： A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

9. 发明申请

US20160154306A1 METHODS OF FORMING PATTERNS USING PHOTORESIST POLYMERS 有权
标题翻译：使用光电聚合物形成图案的方法
公开(公告)号：US20160154306A1
公开(公告)日：2016-06-02
申请号：US14886155
申请日：2015-10-19
申请人： Jin Park , Hyun-Woo KIM , Jin-Kyu HAN
发明人： Jin Park , Hyun-Woo KIM , Jin-Kyu HAN
IPC分类号： G03F7/039 , G03F7/36 , G03F7/32 , G03F7/20 , G03F7/16
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/016 , G03F7/0392 , G03F7/16 , G03F7/168 , G03F7/2004 , G03F7/26 , G03F7/30 , G03F7/327 , G03F7/36 , H01L21/0274 , H01L29/4236
摘要： A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.
摘要翻译：一种光致抗蚀剂聚合物，其包含包含卤素供体基团的第一重复单元和包含通过硫键连接的保护基团的第二重复单元。

10. 发明申请

US20160083793A1 RADIATION BIODOSIMETRY SYSTEMS 审中-公开
标题翻译：辐射生物测定系统
公开(公告)号：US20160083793A1
公开(公告)日：2016-03-24
申请号：US14823433
申请日：2015-08-11
申请人： Joshua LaBaer , Kristin Gillis , Garrick Wallstrom , Jin Park , Vel Murugan , Mitch Magee
发明人： Joshua LaBaer , Kristin Gillis , Garrick Wallstrom , Jin Park , Vel Murugan , Mitch Magee
IPC分类号： C12Q1/68 , G06F19/20
CPC分类号： C12Q1/6883 , C12Q1/6827 , C12Q2600/156 , C12Q2537/165
摘要： Disclosed herein are compositions and methods for accurately estimating the absorbed dose of radiation indicated by a subject based on the expression pattern of a panel of radiation-modulated (RM) genes at various time points following exposure of the subject to ionizing radiation.
摘要翻译：本文公开了用于在受试者暴露于电离辐射之后的各个时间点，基于一组辐射调制（RM）基因的表达模式来精确估计受试者所指示的辐射的吸收剂量的组合物和方法。

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