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1. 发明申请

US20060208264A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 审中-公开
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20060208264A1
公开(公告)日：2006-09-21
申请号：US11439127
申请日：2006-05-24
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L33/00 , H01L27/15 , H01L29/167 , H01L31/12
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

2. 发明申请

US20050208686A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20050208686A1
公开(公告)日：2005-09-22
申请号：US10875321
申请日：2004-06-25
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L21/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

3. 发明申请

US20050179045A1 Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof 审中-公开
标题翻译：具有改善的欧姆接触结构的氮化物半导体发光二极管及其制造方法
公开(公告)号：US20050179045A1
公开(公告)日：2005-08-18
申请号：US10857932
申请日：2004-06-02
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park
IPC分类号： H01L29/22 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed is a nitride semiconductor LED and a fabrication method thereof. An n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p+-doped semiconductor layer are formed in their order on a substrate. A resultant semiconductor structure is mesa-etched to expose a partial area of the n-doped semiconductor layer. The p+-doped semiconductor layer and the exposed area of the n-doped semiconductor layer are n-doped at a high concentration to form first and second n+-doped regions, respectively. P- and n-electrodes are formed on the first and second n+-doped regions, respectively. Then, reverse bias is created to improve an ohmic contact structure between a semiconductor layer and a metal electrode thereby lowering drive voltage while raising overvoltage resistance and luminance.
摘要翻译：公开了一种氮化物半导体LED及其制造方法。在衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p + +掺杂半导体层。对所得半导体结构进行台面蚀刻以暴露n掺杂半导体层的部分区域。掺杂p +的掺杂半导体层和n掺杂半导体层的暴露面积以高浓度n掺杂以形成第一和第二n + +掺杂区域，分别。 P-和n-电极分别形成在第一和第二n + + - 掺杂区域上。然后，产生反向偏压以改善半导体层和金属电极之间的欧姆接触结构，从而降低驱动电压，同时提高过电压和亮度。

4. 发明申请

US20050066636A1 Air pre-cleaner 有权
标题翻译：空气预清洁剂
公开(公告)号：US20050066636A1
公开(公告)日：2005-03-31
申请号：US10750676
申请日：2003-12-31
申请人： Kee Yang
发明人： Kee Yang
IPC分类号： F02M35/02 , F02M35/022 , F02M35/08 , B01D46/00
CPC分类号： F02M35/08 , F02M35/022
摘要： The air pre-cleaner includes a housing, a drain valve, and an air exhaust pipe. The housing is provided with an air inlet. The drain valve is disposed in the housing and is configured to drain impurities separated from intake air entering the housing through the air inlet. The intake air is exhausted from the housing through the air exhaust pipe. An upper portion of the air exhaust pipe protrudes inside the housing, and the air exhaust pipe has a lateral section with a first end portion that is disposed near the air inlet that is sharper than an opposite portion thereof.
摘要翻译：空气预净器包括壳体，排水阀和排气管。外壳设有进风口。排水阀设置在壳体中并且构造成排出通过进气口进入壳体的进入空气分离的杂质。进气通过排气管从壳体排出。排气管的上部在壳体的内部突出，排气管具有侧面部分，其第一端部设置在空气入口附近比其相对部分更尖锐。

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