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1. 发明申请

US20130258546A1 MULTILAYER CERAMIC ELECTRONIC COMPONENT AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：多层陶瓷电子元件及其制造方法
公开(公告)号：US20130258546A1
公开(公告)日：2013-10-03
申请号：US13827258
申请日：2013-03-14
申请人： Chan Kong KIM , Jin Yung RYU , Jun AH , Yong Joon KO , Woo Kyung SUNG , Jong Rock LEE
发明人： Chan Kong KIM , Jin Yung RYU , Jun AH , Yong Joon KO , Woo Kyung SUNG , Jong Rock LEE
IPC分类号： H01G4/12 , H01G4/008
CPC分类号： H01G4/12 , H01G4/008 , H01G4/2325 , H01G4/30
摘要： There are provided a multilayer ceramic electronic component and a fabrication method thereof. The multilayer ceramic component includes a ceramic main body in which internal electrodes and dielectric layers are alternately laminated; external electrodes formed on outer surfaces of the ceramic main body; intermediate layers formed on the external electrodes and including one or more selected from the group consisting of nickel, copper, and a nickel-copper alloy; and plating layers formed on the intermediate layers, whereby infiltration of a plating solution can be prevented.
摘要翻译：提供了一种多层陶瓷电子部件及其制造方法。多层陶瓷部件包括：内部电极和电介质层交替层叠的陶瓷主体; 形成在陶瓷主体的外表面上的外部电极; 形成在外部电极上的中间层，并且包括选自镍，铜和镍 - 铜合金中的一种或多种; 以及形成在中间层上的镀层，从而可以防止电镀液的渗透。

2. 发明申请

US20070099317A1 Method for manufacturing vertical structure light emitting diode 失效
标题翻译：垂直结构发光二极管的制造方法
公开(公告)号：US20070099317A1
公开(公告)日：2007-05-03
申请号：US11522407
申请日：2006-09-18
申请人： Yung Ryu , Hae Hwang
发明人： Yung Ryu , Hae Hwang
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： A method for manufacturing a vertical light emitting diode of the invention allows an easier process of individually separating chips. A light emitting structure is formed on a growth substrate having a plurality of device areas and at least one device isolation area. The light emitting structure has an n-type clad layer, an active layer and a p-type clad layer sequentially formed therein. Corresponding p-type electrodes are formed on the light emitting structure on the device areas. A glass substrate having through holes perforated therein is provided on the p-electrodes so that the through holes are disposed corresponding to the p-electrodes. Also, the through holes are plated with a metal material to form patterns of a plating layer on the p-electrodes. Then, the growth substrate is removed to form n-electrodes on the n-type clad layer. The glass substrate is removed via etching.
摘要翻译：本发明的垂直发光二极管的制造方法能够容易地分离芯片。在具有多个器件区域和至少一个器件隔离区域的生长衬底上形成发光结构。发光结构具有依次形成的n型覆盖层，有源层和p型覆盖层。相应的p型电极形成在器件区域上的发光结构上。在p电极上设置有在其上穿孔的玻璃基板，使得贯通孔对应于p电极。此外，通孔用金属材料镀覆以在p电极上形成电镀层的图案。然后，去除生长衬底以在n型覆盖层上形成n电极。通过蚀刻去除玻璃基板。

3. 发明申请

US20070090382A1 Light emitting diode package 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20070090382A1
公开(公告)日：2007-04-26
申请号：US11543232
申请日：2006-10-05
申请人： Yung Ryu
发明人： Yung Ryu
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L33/505 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode package is provided. A package body has a mounting part surrounded by side walls and lead electrodes on a bottom surface of the mounting part. A light emitting diode chip is mounted on the bottom surface of the mounting part and electrically connected to the lead electrodes. A resin encapsulant is filled in the mounting part to encapsulate the light emitting diode chip. At least one residual resin storage is formed on a top surface of a corresponding one of the side walls to guide and accommodate a residual resin for forming the encapsulant of a preset height. Further, a storing groove is formed on the top surface of the corresponding side wall and a guiding groove is formed to guide the residual resin to the storing groove. This produces the light emitting diode package with uniform color distribution regardless of a liquid resin amount injected.
摘要翻译：提供发光二极管封装。封装体具有由安装部的底面上的侧壁和引线电极包围的安装部。发光二极管芯片安装在安装部分的底表面上并电连接到引线电极。树脂密封剂填充在安装部分中以封装发光二极管芯片。在对应的一个侧壁的顶表面上形成至少一个残留树脂储存器，以引导和容纳用于形成预定高度的密封剂的残留树脂。此外，在对应的侧壁的顶表面上形成有一个存储槽，并且形成一个引导槽，以将残留的树脂引导到存储槽。无论注入的液体树脂量如何，都能产生具有均匀颜色分布的发光二极管封装。

4. 发明申请

US20070077673A1 Method for manufacturing vertically structured light emitting diode 有权
标题翻译：制造垂直结构发光二极管的方法
公开(公告)号：US20070077673A1
公开(公告)日：2007-04-05
申请号：US11541674
申请日：2006-10-03
申请人： Hae Hwang , Yung Ryu , Da Shim , Se Ahn
发明人： Hae Hwang , Yung Ryu , Da Shim , Se Ahn
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.
摘要翻译：提供了一种制造能够容易地进行芯片分离处理的垂直结构的LED的方法。在该方法中，在具有多个器件区域和至少一个器件隔离区域的生长衬底上形成发光结构，其中，所述发光结构体具有n型覆盖层，有源层和p- 型覆盖层依次设置在生长基板上。在发光结构上形成p电极。此后，在p电极上形成第一镀层，使得它连接多个器件隔离区。在器件区域的第一镀层上形成第二镀层的图案。去除生长衬底，然后在n型覆盖层上形成n电极。

5. 发明申请

US20060234411A1 Method of manufacturing nitride semiconductor light emitting diode 审中-公开
标题翻译：制造氮化物半导体发光二极管的方法
公开(公告)号：US20060234411A1
公开(公告)日：2006-10-19
申请号：US11399524
申请日：2006-04-07
申请人： Yung Ryu , Pil Kang
发明人： Yung Ryu , Pil Kang
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： The invention relates to a method of manufacturing a semiconductor light emitting diode. In the method, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are formed sequentially on a substrate. Then, a nickel oxide (NiOx) film is directly deposited on the p-type semiconductor layer via reactive sputtering or reactive deposition in an oxidizing atmosphere. Also, a light transmissible conductive oxide layer is formed on the nickel oxide film.
摘要翻译：本发明涉及半导体发光二极管的制造方法。在该方法中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。然后，通过在氧化气氛中的反应性溅射或反应性沉积，直接在p型半导体层上沉积氧化镍（NiO·xS）膜。此外，在氧化镍膜上形成透光性导电氧化物层。

6. 发明申请

US20050179045A1 Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof 审中-公开
标题翻译：具有改善的欧姆接触结构的氮化物半导体发光二极管及其制造方法
公开(公告)号：US20050179045A1
公开(公告)日：2005-08-18
申请号：US10857932
申请日：2004-06-02
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park
IPC分类号： H01L29/22 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed is a nitride semiconductor LED and a fabrication method thereof. An n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p+-doped semiconductor layer are formed in their order on a substrate. A resultant semiconductor structure is mesa-etched to expose a partial area of the n-doped semiconductor layer. The p+-doped semiconductor layer and the exposed area of the n-doped semiconductor layer are n-doped at a high concentration to form first and second n+-doped regions, respectively. P- and n-electrodes are formed on the first and second n+-doped regions, respectively. Then, reverse bias is created to improve an ohmic contact structure between a semiconductor layer and a metal electrode thereby lowering drive voltage while raising overvoltage resistance and luminance.
摘要翻译：公开了一种氮化物半导体LED及其制造方法。在衬底上依次形成n掺杂半导体层，有源层，p掺杂半导体层和p + +掺杂半导体层。对所得半导体结构进行台面蚀刻以暴露n掺杂半导体层的部分区域。掺杂p +的掺杂半导体层和n掺杂半导体层的暴露面积以高浓度n掺杂以形成第一和第二n + +掺杂区域，分别。 P-和n-电极分别形成在第一和第二n + + - 掺杂区域上。然后，产生反向偏压以改善半导体层和金属电极之间的欧姆接触结构，从而降低驱动电压，同时提高过电压和亮度。

7. 发明申请

US20060208264A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 审中-公开
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20060208264A1
公开(公告)日：2006-09-21
申请号：US11439127
申请日：2006-05-24
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L33/00 , H01L27/15 , H01L29/167 , H01L31/12
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

8. 发明申请

US20050208686A1 Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof 失效
标题翻译：氮化物半导体LED的照明效率提高和制造方法
公开(公告)号：US20050208686A1
公开(公告)日：2005-09-22
申请号：US10875321
申请日：2004-06-25
申请人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
发明人： Yung Ryu , Kee Yang , Bang Oh , Jin Park , Young Kim
IPC分类号： H01L21/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/007
摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
摘要翻译：提高了照明效率的氮化物半导体LED及其制造方法，其中在衬底上形成n掺杂半导体层。在n掺杂半导体层上形成有源层，以露出n掺杂半导体层的至少一部分区域。在有源层上形成p掺杂半导体层。在p掺杂半导体层上形成p +掺杂的半导体层。通过n掺杂剂离子注入在p +掺杂的半导体层的至少部分上部区域中形成n +掺杂的半导体层。 n +掺杂的半导体层与p +掺杂的半导体层的下面的部分区域配合以实现反向偏压隧道结。此外，在n +掺杂的半导体层上形成上部n掺杂半导体层，以实现横向电流扩展。本发明可以通过使用反向偏置隧道结和/或横向电流扩展来提高照明效率。

9. 发明授权

US07147835B2 Oxide powder for dielectrics, method of manufacturing oxide powder for dielectrics, and multi-layer ceramic capacitor using the same 有权
标题翻译：用于电介质的氧化物粉末，用于电介质的氧化物粉末的制造方法以及使用其的多层陶瓷电容器
公开(公告)号：US07147835B2
公开(公告)日：2006-12-12
申请号：US10888592
申请日：2004-07-12
申请人： Dong Hwan Seo , Kang Heon Hur , Sung Hyung Kang , Jin Yung Ryu
发明人： Dong Hwan Seo , Kang Heon Hur , Sung Hyung Kang , Jin Yung Ryu
IPC分类号： C01F1/00 , C01F11/00 , C01F17/00 , C01G23/00 , H01G4/06
CPC分类号： C04B35/4682 , C01G23/003 , C01G23/006 , C01P2002/34 , C01P2004/62 , C04B35/62675 , C04B35/62805 , C04B35/6281 , C04B35/62815 , C04B35/62821 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3232 , C04B2235/5409 , C04B2235/5445 , C04B2235/5481 , C04B2235/768 , C04B2235/79
摘要： Disclosed herein is a small particle oxide powder for dielectrics. The oxide powder has a perovskite structure, an average particle diameter [D50(μm)] of 0.3 μm or less, a particle size distribution of the average particle diameter within 3%, a particle size distribution satisfying a condition D99/D50
摘要翻译：本文公开了一种用于电介质的小颗粒氧化物粉末。氧化物粉末具有钙钛矿结构，平均粒径[D50（母体）]为0.3μm以下，平均粒径在3％以内的粒度分布，满足条件D99 / D50 <2.5的粒度分布， 0.2重量％，C / A轴比为1.006以上的OH基团的含量。制备氧化物粉末的方法包括以下步骤：将TiO 2 2颗粒和由ABO 3的钙钛矿结构的A表示的至少一种元素溶解的化合物; 干燥和粉碎TiO 2和该化合物的混合物; 煅烧粉碎混合物; 将含有位点A的元素的氧化物加入到涂覆的TiO 2颗粒中并进行湿式混合，干燥和粉碎; 主要在真空下煅烧粉碎粉碎粉末; 并二次煅烧和粉碎粉末。

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