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1. 发明授权

US5181217A Laser oscillator circuit 失效
标题翻译：激光振荡器电路
公开(公告)号：US5181217A
公开(公告)日：1993-01-19
申请号：US727432
申请日：1991-07-09
申请人： Yukio Sato , Akihiro Suzuki , Mitsuo Inoue , Kenyu Haruta , Haruhiko Nagai
发明人： Yukio Sato , Akihiro Suzuki , Mitsuo Inoue , Kenyu Haruta , Haruhiko Nagai
IPC分类号： H01S3/0971
CPC分类号： H01S3/0971
摘要： A discharge pumping circuit of spiker/sustainer type for the Excimer laser oscillator, wherein spiker unit is isolated from the sustainer unit by a switching device such as a magnetic isolator is disclosed. In the pumping circuit, the switching device shifts from its OFF state to its ON state, during the process of charging a spiker capacitor, before its terminal voltage reaches a voltage which initiates the discharge, and a sharp-rise pulse voltage is applied by a transfer of electric charge from said sustainer capacitor to said spiker capacitor, to initiate the discharge for the pumping. In another discharge-pumping circuit which also has a means for preionizing the laser gas, the timing for the preionization is set to start after the initiation of charging the sustainer capacitor and before the initiation of charging the spiker capacitor in a polarity opposite to that of the sustainer capacitor, and is controlled for maintaining the discharge initiating voltage constant for the repetition frequency. In another discharge-pumping circuit, a power source for charging the sustainer capacitor is structured to include a magnetic pulse compression circuit to reduce the stress on a high voltage switch such as a thyratron in the circuit to realize an excellent performance, a long service life and a high reliability.
摘要翻译：公开了一种用于准分子激光振荡器的尖头/持续器类型的放电泵浦电路，其中尖头单元通过诸如磁隔离器的开关装置与维持器单元隔离。在泵浦电路中，在尖端电容器的充电过程中，在其端电压达到开始放电的电压之前，开关器件从其OFF状态转换到ON状态，并且尖锐的脉冲电压由将电荷从所述持续电容器转移到所述尖头电容器，以启动用于泵送的放电。在还具有用于预激化激光气体的装置的另一个放电 - 泵浦电路中，预先去离子化的定时被设置为在对维持电容器充电开始之后并且在尖晶石电容器开始充电之前开始，其极性与并且被控制为使重放频率的放电起始电压保持恒定。在另一个放电泵浦电路中，用于对持续电容器充电的电源被构造成包括磁脉冲压缩电路，以减小电路中诸如闸流管之类的高压开关上的应力，以实现优异的性能，长的使用寿命并具有高可靠性。

2. 发明授权

US4837773A Discharge excitation type short pulse laser 失效
标题翻译：放电激励型短脉冲激光
公开(公告)号：US4837773A
公开(公告)日：1989-06-06
申请号：US267629
申请日：1988-10-31
申请人： Hitoshi Wakata , Mitsuo Inoue , Yukio Sato , Kenyu Haruta , Haruhiko Nagai
发明人： Hitoshi Wakata , Mitsuo Inoue , Yukio Sato , Kenyu Haruta , Haruhiko Nagai
IPC分类号： H01S3/0971
CPC分类号： H01S3/09716
摘要： A discharge excitation type short pulse laser device is provided with a preliminary ionization circuit, the effeciency of preliminary ionization of which is remarkably improved. The laser device comprises a main discharge circuit including first and second main electrodes which are confronted with each other in a laser medium, main discharge capacitor means for storing energy for main discharge, and a discharge starting high voltage switch; and a preliminary ionization circuit connected to said high voltage switch, said preliminary ionization circuit including a discharging gap for preliminary ionization, a preliminary ionization capacitor and an inductance.
摘要翻译：放电励磁型短脉冲激光装置具有初电离电路，其初步电离效果显着提高。激光装置包括：主放电电路，包括在激光介质中彼此面对的第一和第二主电极，用于存储用于主放电的能量的主放电电容器装置和放电启动高压开关; 以及与所述高电压开关连接的初步电离电路，所述初步电离电路包括用于初步电离的放电间隙，初步电离电容器和电感。

3. 发明授权

US6008914A Laser transfer machining apparatus 失效
标题翻译：激光转印加工设备
公开(公告)号：US6008914A
公开(公告)日：1999-12-28
申请号：US935161
申请日：1997-09-22
申请人： Tomohiro Sasagawa , Kenyu Haruta , Yukio Sato , Hitoshi Wakata, deceased , Mitsuo Inoue , Akihiro Suzuki , Shuichi Fujikawa , Yoshio Saito
发明人： Tomohiro Sasagawa , Kenyu Haruta , Yukio Sato , Hitoshi Wakata, deceased , Mitsuo Inoue , Akihiro Suzuki , Shuichi Fujikawa , Yoshio Saito
IPC分类号： B23K26/06 , B23K26/067 , B23K26/38 , G03H1/08 , G03H1/16 , G02B5/32 , G02B27/44 , G02B27/46
CPC分类号： G03H1/0005 , B23K26/0604 , B23K26/066 , B23K26/067 , B23K26/386 , G03H1/08 , G03H1/16 , G03H2001/0094
摘要： The laser transfer machining apparatus comprises a shaping unit for shaping the laser beam so that the laser beam has a beam pattern which corresponds to a desired pattern to be machined in the object to be machined and a generating unit disposed separately from the shaping unit for simultaneously generating a plurality of laser beams each having the beam pattern from the laser beam shaped by the shaping unit. The generating unit is adapted to emit the plural laser beams while simultaneously defining a plurality of radiation directions of the generated plural laser beams to the object to be machined. The laser transfer machining apparatus can provide a high efficiency of utilization of light and reduce the time required for machining. Furthermore, the laser transfer machining apparatus can utilize a laser with a relatively low spatially coherence such as an eximer laser.
摘要翻译：激光传递加工装置包括：成形单元，用于使激光束成形，使得激光束具有对应于待加工物体中要加工的期望图案的光束图案;以及与成形单元分开设置的发生单元，用于同时产生多个激光束，每个激光束具有来自由成形单元成形的激光束的光束图案。发生单元适于发射多个激光束，同时将所生成的多个激光束的多个辐射方向限定到待加工物体。激光转印加工装置可以提供高效率的光利用并减少加工所需的时间。此外，激光转印加工装置可以利用具有较低空间相干性的激光器，例如准分子激光器。

4. 发明授权

US5177762A Saturable reactor 失效
标题翻译：可食用反应剂
公开(公告)号：US5177762A
公开(公告)日：1993-01-05
申请号：US660850
申请日：1991-02-26
申请人： Yukio Sato , Mitsuo Inoue , Kenyu Haruta , Akihiro Suzuki , Hitoshi Wakata
发明人： Yukio Sato , Mitsuo Inoue , Kenyu Haruta , Akihiro Suzuki , Hitoshi Wakata
IPC分类号： H01F29/14 , H01F17/06 , H01F27/08 , H01S3/04 , H01S3/097 , H01S3/0971
CPC分类号： H01S3/0971 , H01F17/062 , H01F27/08 , H01F2029/143
摘要： A saturable reactor comprising a magnetic core (1) having an annular or an elongated race-track configuration, an electrical insulator (6) disposed around the magnetic core and a conductor winding (3) wound around the insulator (6). A coolant duct (7) is provided in the insulator to extend radially transversely across the magnetic core and having a radially separated inlet and outlet (8,9). A saturable reactor may comprises an annular magnetic core (51), a conductor winding including a first conductor (55) surrounded by the magnetic core (51) and a second conductor (56) disposed around the magnetic core and connected to the first conductor (55) through a load. A control winding (54) extends through the first and second conductors (55,56), and at least one of the first and second conductors (55,56) has a notch or a through hole (57,59) for insulatingly receiving the control winding (54) therein. Also disclosed is a laser oscillator comprising a gas-filled laser chamber (81) in which a main electrode pair (82,83) is disposed in an opposing relationship to define a laser-excited discharge region therebetween. At least some of the components of an oscillation circuit for generating a laser oscillation are disposed within a first circuit component chamber (95) disposed adjacent to the laser chamber (81) and filled with an electrically insulating gas, and some other components are disposed within a second circuit component chamber (96) disposed adjacent to the first circuit component chamber (95) and filled with an electrically insulating oil.
摘要翻译：一种可饱和电抗器，其包括具有环形或细长的轨道结构的磁芯（1），围绕所述磁芯设置的电绝缘体（6）和缠绕在所述绝缘体（6）上的导体绕组（3）。冷却剂管道（7）设置在绝缘体中以径向横向横穿磁芯并且具有径向分离的入口和出口（8,9）。可饱和电抗器可以包括环形磁芯（51），包括由磁芯（51）包围的第一导体（55）的导体绕组和设置在磁芯周围并连接到第一导体的第二导体（56） 55）通过负载。控制绕组（54）延伸穿过第一和第二导体（55,56），并且第一和第二导体（55,56）中的至少一个具有凹口或通孔（57,59），用于绝缘地接收控制绕组（54）。还公开了一种激光振荡器，其包括气体填充激光室（81），其中主电极对（82,83）以相对的关系设置，以在其间限定激光激发放电区域。用于产生激光振荡的振荡电路中的至少一些部件被配置在与激光室（81）相邻设置并填充有电绝缘气体的第一电路部件室（95）内，并且一些其它部件设置在邻近第一电路部件室（95）设置并填充有电绝缘油的第二电路部件室（96）。

5. 发明授权

US5313487A Discharge excitation gas laser apparatus 失效
标题翻译：放电激发气体激光装置
公开(公告)号：US5313487A
公开(公告)日：1994-05-17
申请号：US887770
申请日：1992-05-22
申请人： Shuichi Fujikawa , Mitsuo Inoue , Yukio Sato , Haruhiko Nagai
发明人： Shuichi Fujikawa , Mitsuo Inoue , Yukio Sato , Haruhiko Nagai
IPC分类号： H01S3/0977 , H01S3/097
CPC分类号： H01S3/0977 , H01S3/09775
摘要： At least two types of preionization systems are provided at a backside of one of a pair of primary electrodes which are disposed in a spaced opposed relation with respect to each other for causing a large area, spatially uniform main discharge in a laser gas therebetween. This improves efficiency and stability in laser oscillations under repeated operations at a high rate of tens to hundreds of shots per second. In addition, without using the laser output power, the preionization timing is controlled such that an optimal preionization timing is realized. The optimal preionization timing is determined on the basis of a minimum discharge starting voltage between the primary electrodes or a minimum required time from the time of applying a high voltage between said first and second primary electrodes until the time the main discharge commences.
摘要翻译：在一对主电极之一的背面设置至少两种类型的预电离系统，这些主电极相对于彼此以间隔开的相对关系设置，以在它们之间的激光气体中引起大面积的空间均匀的主放电。这样可以在每秒数十到数百次的高速率重复操作下提高激光振荡的效率和稳定性。此外，在不使用激光输出功率的情况下，控制预定时定时，从而实现最佳的初步化定时。基于初级电极之间的最小放电起始电压或从在所述第一和第二主电极之间施加高电压直到主放电开始时的最小所需时间来确定最佳预电离定时。

6. 发明授权

US06566683B1 Laser heat treatment method, laser heat treatment apparatus, and semiconductor device 有权
标题翻译：激光热处理方法
公开(公告)号：US06566683B1
公开(公告)日：2003-05-20
申请号：US09708608
申请日：2000-11-09
申请人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
发明人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , B23K26/0732 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1296
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.
摘要翻译：通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束在形成在基板上的薄膜材料上。

7. 发明授权

US06437284B1 Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same 有权
标题翻译：用于激光热处理的光学系统和设备以及使用该半导体器件的半导体器件的制造方法
公开(公告)号：US06437284B1
公开(公告)日：2002-08-20
申请号：US09599645
申请日：2000-06-23
申请人： Tatsuki Okamoto , Tetsuya Ogawa , Keisuke Furuta , Hidetada Tokioka , Tomohiro Sasagawa , Junichi Nishimae , Mitsuo Inoue , Yukio Sato
发明人： Tatsuki Okamoto , Tetsuya Ogawa , Keisuke Furuta , Hidetada Tokioka , Tomohiro Sasagawa , Junichi Nishimae , Mitsuo Inoue , Yukio Sato
IPC分类号： B23K2606
CPC分类号： B23K26/0732 , B23K2101/40 , H01L21/02675 , H01L21/2026
摘要： An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming, apparatus makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam 2 such as directivity in the direction of shorter side, making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed.
摘要翻译：提供了通过激光热处理工艺控制用于形成高性能薄膜的激光束光斑轮廓的光学系统。在形成在基板上的膜上照射矩形激光束的光学系统中，强度分布形成装置使得强度分布沿长度方向均匀，同时保持激光束2的特性，例如沿短边方向的方向性，使得可以将光集中到由激光束的性质允许的极限，并且在设置在基板上的膜上实现最大强度梯度。因此，可以在设置在基板上的膜上产生陡峭的温度分布，结果，可以形成高性能的薄膜。

8. 发明授权

US06884699B1 Process and unit for production of polycrystalline silicon film 有权
标题翻译：生产多晶硅膜的工艺和单元
公开(公告)号：US06884699B1
公开(公告)日：2005-04-26
申请号：US10148562
申请日：2000-10-06
申请人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
发明人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
IPC分类号： C23C14/58 , H01L21/20 , H01L21/336 , H01L21/00 , H01L21/331 , H01L21/26
CPC分类号： C23C14/5813 , B23K26/0604 , B23K26/0738 , B23K26/0838 , B23K26/352 , B23K2101/40 , B23K2103/52 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L29/66757 , Y10S438/969
摘要： A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
摘要翻译：一种制造多晶硅膜的方法包括在玻璃基板上形成具有与第一区域接触的第一区域和第二区域的非晶硅膜，通过用非晶硅膜的第一区域照射非晶硅膜形成第一多晶部分，具有不小于390nm且不大于640nm的波长的激光，并且通过照射第二区域和形成与第一多晶部分接触的第二多晶部分的区域的部分形成第二多晶部分，具有激光的非晶硅膜。

9. 发明授权

US06753548B2 Laser heat treatment method, laser heat treatment apparatus, and semiconductor device 有权
标题翻译：激光热处理方法，激光热处理装置和半导体装置
公开(公告)号：US06753548B2
公开(公告)日：2004-06-22
申请号：US10420779
申请日：2003-04-23
申请人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
发明人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , B23K26/0732 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1296
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.
摘要翻译：通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束在形成在基板上的薄膜材料上。

10. 发明授权

US07061452B2 Spontaneous light-emitting display device 有权
标题翻译：自发发光显示装置
公开(公告)号：US07061452B2
公开(公告)日：2006-06-13
申请号：US10276062
申请日：2002-03-15
申请人： Mitsuo Inoue , Masashi Okabe , Shuji Iwata , Takashi Yamamoto
发明人： Mitsuo Inoue , Masashi Okabe , Shuji Iwata , Takashi Yamamoto
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0426 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2300/088 , G09G2320/0233 , G09G2320/029 , G09G2320/043 , G09G2320/045 , G09G2360/148 , H01L27/3269
摘要： In a spontaneous light-emitting display device operating in an active matrix mode, variations in the threshold voltages of transistors controlling the current flowing to light-emitting elements and variations in the light emission threshold voltages of the light-emitting elements are suppressed, reducing variations in the luminance of the light-emitting elements. Light-detecting elements detect light emitted by the light-emitting elements, and threshold voltages of the transistors are detected by the voltages of nodes of resistors and the light-emitting elements. Further, transistors controlled by respective signals of the light-detecting elements also detect the light emission threshold voltages of the light-emitting elements.
摘要翻译：在以有源矩阵模式工作的自发发光显示装置中，控制流向发光元件的电流的晶体管的阈值电压的变化和发光元件的发光阈值电压的变化被抑制，在发光元件的亮度。光检测元件检测由发光元件发出的光，并且通过电阻器和发光元件的节点的电压来检测晶体管的阈值电压。此外，由光检测元件的各个信号控制的晶体管也检测发光元件的发光阈值电压。

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