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1. 发明授权

US06884699B1 Process and unit for production of polycrystalline silicon film 有权
标题翻译：生产多晶硅膜的工艺和单元
公开(公告)号：US06884699B1
公开(公告)日：2005-04-26
申请号：US10148562
申请日：2000-10-06
申请人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
发明人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
IPC分类号： C23C14/58 , H01L21/20 , H01L21/336 , H01L21/00 , H01L21/331 , H01L21/26
CPC分类号： C23C14/5813 , B23K26/0604 , B23K26/0738 , B23K26/0838 , B23K26/352 , B23K2101/40 , B23K2103/52 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L29/66757 , Y10S438/969
摘要： A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
摘要翻译：一种制造多晶硅膜的方法包括在玻璃基板上形成具有与第一区域接触的第一区域和第二区域的非晶硅膜，通过用非晶硅膜的第一区域照射非晶硅膜形成第一多晶部分，具有不小于390nm且不大于640nm的波长的激光，并且通过照射第二区域和形成与第一多晶部分接触的第二多晶部分的区域的部分形成第二多晶部分，具有激光的非晶硅膜。

2. 发明授权

US06602765B2 Fabrication method of thin-film semiconductor device 失效
公开(公告)号：US06602765B2
公开(公告)日：2003-08-05
申请号：US09875910
申请日：2001-06-08
申请人： Hiroaki Jiroku , Mitsutoshi Miyasaka , Hidetada Tokioka , Tetsuya Ogawa
发明人： Hiroaki Jiroku , Mitsutoshi Miyasaka , Hidetada Tokioka , Tetsuya Ogawa
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.

3. 发明授权

US08654293B2 Liquid-crystal apparatus, method for manufacturing the same, and electronic device 有权
标题翻译：液晶装置及其制造方法以及电子装置
公开(公告)号：US08654293B2
公开(公告)日：2014-02-18
申请号：US13019652
申请日：2011-02-02
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： G02F1/1333 , G02F1/136
CPC分类号： G02F1/136227
摘要： A liquid-crystal apparatus has an element substrate. This element substrate contains depressions inside, and these depressions are sealed with an insulating film, a silicon dioxide coating. To this end, the insulating film is formed by chemical vapor deposition, and this coating process lasts until voids formed in the depressions are closed at the top by the insulating film. Then, the insulating coating is ground. This grinding process lasts until the insulating film is flat, but should be terminated before the voids are opened.
摘要翻译：液晶装置具有元件基板。该元件基板在其内部包含凹陷，并且这些凹陷用绝缘膜，二氧化硅涂层密封。为此，通过化学气相沉积形成绝缘膜，并且该涂覆过程持续到直到形成在凹陷中的空隙在顶部被绝缘膜封闭为止。然后，将绝缘涂层研磨。该研磨过程持续到绝缘膜平坦，但应在空隙打开之前终止。

4. 发明申请

US20120120357A1 ELECTRO-OPTIC DEVICE AND PROJECTION-TYPE DISPLAY APPARATUS 有权
标题翻译：电光装置和投影型显示装置
公开(公告)号：US20120120357A1
公开(公告)日：2012-05-17
申请号：US13232479
申请日：2011-09-14
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： G02F1/1337 , G02F1/1333
CPC分类号： G02F1/136227 , G02F2201/50
摘要： An electro-optic device is provided with an substrate, in which a stress relieving film formed of a doped silicon oxide film is formed between a third interlayer insulating film formed of a non-doped silicon oxide film and a pixel electrode formed of an aluminum film or the like. The stress relieving film is formed of the doped silicon oxide film, has a thermal expansion coefficient different from that of the third interlayer insulating film, comes in contact with the third interlayer insulating film, has a thermal expansion coefficient different from that of the pixel electrode, and comes in contact with the pixel electrode. The thermal expansion coefficients are in the following relation of Third Interlayer Insulating Film
摘要翻译：电光装置设置有基板，其中由掺杂氧化硅膜形成的应力消除膜形成在由非掺杂氧化硅膜形成的第三层间绝缘膜和由铝膜形成的像素电极之间或类似物。应力消除膜由掺杂的氧化硅膜形成，其热膨胀系数与第三层间绝缘膜的热膨胀系数不同，与第三层间绝缘膜接触，具有与像素电极不同的热膨胀系数并与像素电极接触。热膨胀系数与第三层间绝缘膜<应力消除膜<像素电极的关系如下。

5. 发明申请

US20110194060A1 LIQUID-CRYSTAL APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE 有权
标题翻译：液晶装置，其制造方法和电子装置
公开(公告)号：US20110194060A1
公开(公告)日：2011-08-11
申请号：US13019652
申请日：2011-02-02
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227
摘要： A liquid-crystal apparatus has an element substrate. This element substrate contains depressions inside, and these depressions are sealed with an insulating film, a silicon dioxide coating. To this end, the insulating film is formed by chemical vapor deposition, and this coating process lasts until voids formed in the depressions are closed at the top by the insulating film. Then, the insulating coating is ground. This grinding process lasts until the insulating film is flat, but should be terminated before the voids are opened.
摘要翻译：液晶装置具有元件基板。该元件基板在其内部包含凹陷，并且这些凹陷用绝缘膜，二氧化硅涂层密封。为此，通过化学气相沉积形成绝缘膜，并且该涂覆过程持续到直到形成在凹陷中的空隙在顶部被绝缘膜封闭为止。然后，将绝缘涂层研磨。该研磨过程持续到绝缘膜平坦，但应在空隙打开之前终止。

6. 发明申请

US20110157530A1 ELECTRO-OPTICAL DEVICE, METHOD OF MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：电光装置，制造电光装置的方法和电子装置
公开(公告)号：US20110157530A1
公开(公告)日：2011-06-30
申请号：US12974493
申请日：2010-12-21
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： G02F1/1335
CPC分类号： G02F1/133553 , G02F1/136227 , G02F2001/133357
摘要： An electro-optical device including: a reflection film which is formed at each of a plurality of pixels; a dielectric multi-layer film which is formed over the reflection film; a planarizing isolation film over the dielectric multi-layer film burying a step formed by a reflection film; and a first alignment film which is formed over the planarizing isolation film. The reflection film, the dielectric multi-layer film, the planarizing isolation film, and the first alignment film are formed on the surface facing the second substrate in the first substrate.
摘要翻译：一种电光装置，包括：形成在多个像素中的每一个的反射膜; 在反射膜上形成的介电多层膜; 在介电多层膜上沉积由反射膜形成的台阶的平坦化隔离膜; 以及形成在平坦化隔离膜上的第一取向膜。在第一基板的面对第二基板的表面上形成反射膜，电介质多层膜，平坦化隔离膜和第一取向膜。

7. 发明授权

US07148511B2 Active matrix substrate, electro-optical device, electronic device, and method for manufacturing an active matrix substrate 有权
标题翻译：有源矩阵基板，电光器件，电子器件以及有源矩阵基板的制造方法
公开(公告)号：US07148511B2
公开(公告)日：2006-12-12
申请号：US11157793
申请日：2005-06-22
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L21/02595 , G02F1/13454 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L27/3244 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： An active matrix substrate includes a load circuit including a first active element performing a switching operation of a load, the first active element including a semiconductor film of a substantially polycrystalline state; a drive circuit including a second active element controlling driving the load, the second active element including a semiconductor film of a substantially single crystalline state, a hole being provided to one of a part and a peripheral part of the semiconductor film, the hole functioning a starting point for crystallizing the semiconductor film; and a substrate on a same plane of which the load circuit and the drive circuit are formed.
摘要翻译：有源矩阵基板包括负载电路，负载电路包括执行负载的开关操作的第一有源元件，所述第一有源元件包括基本上多晶态的半导体膜; 驱动电路，其包括控制驱动负载的第二有源元件，所述第二有源元件包括基本上单晶态的半导体膜，所述半导体膜的一部分和外围部分中的一个设置有孔，使半导体膜结晶的起始点; 以及形成负载电路和驱动电路的同一平面上的基板。

8. 发明申请

US20060163583A1 Semiconductor device, liquid crystal device, electronic apparatus, and method of manufacturing semiconductor device 有权
标题翻译：半导体装置，液晶装置，电子装置以及半导体装置的制造方法
公开(公告)号：US20060163583A1
公开(公告)日：2006-07-27
申请号：US11296386
申请日：2005-12-08
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： H01L29/76
CPC分类号： H01L29/78633 , H01L29/66757
摘要： A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.
摘要翻译：半导体器件包括：衬底; 形成在所述基板上的多个岛状遮光膜; 形成在所述多个遮光膜之间的第一绝缘膜; 形成在所述第一绝缘膜和所述多个遮光膜上的第二绝缘膜; 以及各自具有半导体膜的半导体元件。在第一绝缘膜和第二绝缘膜之间的界面与多个遮光膜和第二绝缘膜之间的界面之间不产生阶梯差。多个遮光膜中的每一个设置在每个半导体膜和基板之间。

9. 发明授权

US08994904B2 Electro-optic device and projection-type display apparatus 有权
标题翻译：电光装置和投影型显示装置
公开(公告)号：US08994904B2
公开(公告)日：2015-03-31
申请号：US13232479
申请日：2011-09-14
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： G02F1/1333 , G02F1/1362
CPC分类号： G02F1/136227 , G02F2201/50
摘要： An electro-optic device is provided with an substrate, in which a stress relieving film formed of a doped silicon oxide film is formed between a third interlayer insulating film formed of a non-doped silicon oxide film and a pixel electrode formed of an aluminum film or the like. The stress relieving film is formed of the doped silicon oxide film, has a thermal expansion coefficient different from that of the third interlayer insulating film, comes in contact with the third interlayer insulating film, has a thermal expansion coefficient different from that of the pixel electrode, and comes in contact with the pixel electrode. The thermal expansion coefficients are in the following relation of Third Interlayer Insulating Film
摘要翻译：电光装置设置有基板，其中由掺杂氧化硅膜形成的应力消除膜形成在由非掺杂氧化硅膜形成的第三层间绝缘膜和由铝膜形成的像素电极之间或类似物。应力消除膜由掺杂的氧化硅膜形成，其热膨胀系数与第三层间绝缘膜的热膨胀系数不同，与第三层间绝缘膜接触，具有与像素电极不同的热膨胀系数并与像素电极接触。热膨胀系数与第三层间绝缘膜<应力消除膜<像素电极的关系如下。

10. 发明授权

US08848143B2 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus 有权
标题翻译：电光装置，电光装置的制造方法以及电子装置
公开(公告)号：US08848143B2
公开(公告)日：2014-09-30
申请号：US12974493
申请日：2010-12-21
申请人： Hiroaki Jiroku
发明人： Hiroaki Jiroku
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1362
CPC分类号： G02F1/133553 , G02F1/136227 , G02F2001/133357
摘要： An electro-optical device including: a reflection film which is formed at each of a plurality of pixels; a dielectric multi-layer film which is formed over the reflection film; a planarizing isolation film over the dielectric multi-layer film burying a step formed by a reflection film; and a first alignment film which is formed over the planarizing isolation film. The reflection film, the dielectric multi-layer film, the planarizing isolation film, and the first alignment film are formed on the surface facing the second substrate in the first substrate.
摘要翻译：一种电光装置，包括：形成在多个像素中的每一个的反射膜; 在反射膜上形成的介电多层膜; 在介电多层膜上沉积由反射膜形成的台阶的平坦化隔离膜; 以及形成在平坦化隔离膜上的第一取向膜。在第一基板的面对第二基板的表面上形成反射膜，电介质多层膜，平坦化隔离膜和第一取向膜。

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