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1. 发明授权

US08766085B2 Photoelectric conversion device and method of manufacturing the same 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08766085B2
公开(公告)日：2014-07-01
申请号：US13256813
申请日：2010-03-16
申请人： Hidetada Tokioka , Hiroya Yamarin , Tae Orita
发明人： Hidetada Tokioka , Hiroya Yamarin , Tae Orita
IPC分类号： H01L31/00 , H01L21/00 , H01L25/04 , H01L31/05 , H01L31/0216
CPC分类号： H01L25/045 , H01L31/02021 , H01L31/02165 , H01L31/043 , H01L31/046 , H01L31/0465 , H01L31/05 , H01L31/0508 , H01L31/056 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.
摘要翻译：提供一种光电转换装置，其中具有形成在第一透光性绝缘基板的一个表面上的多个第一光电转换元件的第一光电转换模块和具有形成在第一透光性绝缘基板的一个表面上的多个光电转换元件的第二光电转换模块第二透光性绝缘基板与第一光电转换元件和位于内侧的第二光电转换元件接合。光电转换装置包括通过串联电连接第一光电转换元件和布置在彼此相对的位置的第二光电转换元件而形成的多个光电转换元件对。所有光电转换元件对串联电连接。

2. 发明申请

US20120234375A1 THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20120234375A1
公开(公告)日：2012-09-20
申请号：US13508429
申请日：2010-04-08
申请人： Keisuke Nakamura , Hidetada Tokioka , Takeo Furuhata
发明人： Keisuke Nakamura , Hidetada Tokioka , Takeo Furuhata
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/035272 , H01L31/0463 , Y02E10/50
摘要： A thin film solar cell includes, on a substrate, a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer, and a second electrode layer including a conductive material that reflects light. The thin film solar cell includes a plurality of unit solar battery cells divided by scribe lines. The second electrode layer and the first electrode layer of the unit solar battery cell adjacent to the second electrode layer are connected in the scribe line formed in the photoelectric conversion layer. The unit solar battery cells are electrically connected in series. The scribe lines on both sides of at least one of the unit solar battery cells are formed such that the unit solar battery cell held between the scribe lines meanders while having fixed width in a predetermined direction and have same shapes that overlap when the scribe lines translate in the predetermined direction.
摘要翻译：薄膜太阳能电池在基板上包括由透明导电材料形成的第一电极层，光电转换层和包括反射光的导电材料的第二电极层。薄膜太阳能电池包括由划线划分的多个单元太阳能电池单元。与第二电极层相邻的单位太阳能电池单元的第二电极层和第一电极层连接在形成于光电转换层中的划线中。单元太阳能电池单元串联电连接。至少一个单位太阳能电池单元的两侧的划痕线形成为使得保持在划线之间的单位太阳能电池单元在预定方向上具有固定宽度的同时弯曲并且具有与划线翻译时重叠的相同形状沿预定方向。

3. 发明申请

US20120000518A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20120000518A1
公开(公告)日：2012-01-05
申请号：US13256813
申请日：2010-03-16
申请人： Hidetada Tokioka , Hiroya Yamarin , Tae Orita
发明人： Hidetada Tokioka , Hiroya Yamarin , Tae Orita
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L25/045 , H01L31/02021 , H01L31/02165 , H01L31/043 , H01L31/046 , H01L31/0465 , H01L31/05 , H01L31/0508 , H01L31/056 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.
摘要翻译：提供一种光电转换装置，其中具有形成在第一透光性绝缘基板的一个表面上的多个第一光电转换元件的第一光电转换模块和具有形成在第一透光性绝缘基板的一个表面上的多个光电转换元件的第二光电转换模块第二透光性绝缘基板与第一光电转换元件和位于内侧的第二光电转换元件接合。光电转换装置包括通过串联电连接第一光电转换元件和布置在彼此相对的位置的第二光电转换元件而形成的多个光电转换元件对。所有光电转换元件对串联电连接。

4. 发明授权

US06621477B1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06621477B1
公开(公告)日：2003-09-16
申请号：US09708559
申请日：2000-11-09
申请人： Mitsuo Inoue , Masafumi Agari , Hiroyuki Murai , Hidetada Tokioka
发明人： Mitsuo Inoue , Masafumi Agari , Hiroyuki Murai , Hidetada Tokioka
IPC分类号： G09G336
CPC分类号： G09G3/2011 , G09G3/3659 , G09G2300/0828 , G09G2300/0852
摘要： In a color liquid crystal display device, two capacitors are connected in parallel between a pixel signal line and an electrode of a liquid cell, or one of the capacitors is connected therebetween, or none of the capacitors are connected therebetween, in order to selectively set a potential of the electrode of the liquid crystal cell in any of four steps. Therefore, gradation display in four steps can be achieved without a digital-to-analog conversion circuit, so that the cost of the device can be reduced.
摘要翻译：在彩色液晶显示装置中，两个电容器并联连接在像素信号线和液晶盒的电极之间，或者其中一个电容器连接在它们之间，或者没有一个电容器连接在它们之间，以便选择性地设置液晶单元的电极的电位在四个步骤中的任一个中。因此，无需数字 - 模拟转换电路即可实现四级梯度显示，从而可以降低器件的成本。

5. 发明申请

US20110223709A1 METHOD FOR MANUFACTURING THIN-FILM PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造薄膜光电转换装置的方法
公开(公告)号：US20110223709A1
公开(公告)日：2011-09-15
申请号：US13129612
申请日：2009-11-20
申请人： Hidetada Tokioka , Hiroya Yamarin , Tae Orita
发明人： Hidetada Tokioka , Hiroya Yamarin , Tae Orita
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/0463 , H01L31/0465 , Y02E10/50
摘要： A method for manufacturing a thin-film photoelectric conversion device includes forming a first electrode layer, a photoelectric conversion layer having three conductive semiconductor layers laminated thereon, and a second electrode layer sequentially laminated in this order on a translucent insulating substrate, such that adjacent thin-film photoelectric conversion cells are electrically connected in series, isolating a thin-film photoelectric conversion cell into a plurality of thin-film photoelectric conversion cells by forming isolation trenches that reach from the second electrode layer to the first electrode layer, removing a part of sidewalls at an external periphery of the thin-film photoelectric conversion cells positioned at an external peripheral edge of the thin-film photoelectric conversion device, along with the external periphery, and modifying into insulation layers by performing an oxidation process on all of the sidewalls of the isolation trenches of the photoelectric conversion layer and all of the sidewalls at the external periphery.
摘要翻译：一种薄膜光电转换装置的制造方法，其特征在于，在半透明绝缘基板上形成第一电极层，层叠有导电性半导体层的光电转换层和依次层叠的第二电极层，使得相邻的薄膜薄膜光电转换单元串联电连接，通过形成从第二电极层到达第一电极层的隔离沟槽，将薄膜光电转换单元隔离成多个薄膜光电转换单元，位于薄膜光电转换装置的外周边缘处的薄膜光电转换元件的外围的侧壁以及外周，并通过对所有的侧壁进行氧化处理而修饰为绝缘层光电隔离槽转换层和外围的所有侧壁。

6. 发明申请

US20110108118A1 THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US20110108118A1
公开(公告)日：2011-05-12
申请号：US13002403
申请日：2009-05-22
申请人： Hiroya Yamarin , Hidetada Tokioka , Mikio Yamamuka
发明人： Hiroya Yamarin , Hidetada Tokioka , Mikio Yamamuka
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/03762 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A thin-film solar cell in which a transparent electrode having fine surface irregularities with small surface roughness and substantially uniform in-plane resistance is realized can be obtained by forming a plurality of first transparent conductive films separated from one another in a substrate surface on a transparent insulative substrate, forming a second transparent conductive film on the first transparent conductive films, etching the second transparent conductive film in a granular shape and forming first granular members dispersed on the first transparent conductive films, forming a power generation layer on the first transparent conductive films and on the dispersed first granular members, forming a rear-side electrode layer on the power generation layer.
摘要翻译：通过在基板表面上形成多个彼此分离的第一透明导电膜，可以获得其中具有表面粗糙度小且表面粗糙度小且平面电阻基本均匀的细小表面凹凸的透明电极的薄膜太阳能电池在所述第一透明导电膜上形成第二透明导电膜，将所述第二透明导电膜蚀刻成粒状，并形成分散在所述第一透明导电膜上的第一粒状体，在所述第一透明导电膜上形成发电层并且在分散的第一颗粒构件上，在发电层上形成后侧电极层。

7. 发明申请

US20060141683A1 Production method for thin-film semiconductor 失效
标题翻译：薄膜半导体的生产方法
公开(公告)号：US20060141683A1
公开(公告)日：2006-06-29
申请号：US10529373
申请日：2004-08-17
申请人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
发明人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
IPC分类号： H01L21/84 , H01L21/20 , C30B11/00
CPC分类号： H01L21/02686 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
摘要翻译：制造半导体材料薄膜的方法包括：扫描照射步骤，为了在基板的表面上形成多晶硅膜，将具有可见波长的第一脉冲激光聚焦成具有在基板的表面上的宽度方向上的大致高斯形状的强度分布，并且施加光，使得线形状在宽度方向上偏移; 边缘处理步骤，在沿一个方向的一个位置执行扫描照射步骤之后，将具有紫外线波长的第二脉冲激光施加到与经过扫描照射的区域的宽度方向平行的边缘的端部区域; 以及再次施加扫描照射步骤以覆盖与扫描照射步骤所覆盖的区域相邻的区域以及与已经经历边缘处理步骤的端部区域重叠的步骤。

8. 发明申请

US20050174306A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20050174306A1
公开(公告)日：2005-08-11
申请号：US10513755
申请日：2003-06-17
申请人： Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido , Takahiro Urakabe , Suehiro Gotoh , Masashi Okabe , Mitsuo Inoue
发明人： Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido , Takahiro Urakabe , Suehiro Gotoh , Masashi Okabe , Mitsuo Inoue
IPC分类号： G09G3/32 , G09G3/30
CPC分类号： G09G3/3283 , G09G3/3241 , G09G2300/0417 , G09G2300/0842 , G09G2300/0861 , G09G2310/027 , G09G2310/0297 , G09G2320/0242
摘要： Signal lines for supplying signal currents to respective pixel circuits having light emitting elements are arranged. A signal line driving circuit generates, on a signal line, a signal current corresponding to the image data, by switching bit weighting currents output from bit weighting current source circuits provided for respective bits of the image data, using a switch circuit turned on/off dependent on the corresponding bit. Each current source circuit has a function of correcting the level of the bit weighting current output from itself, based on a reference current of the bit weighting current supplied from a reference current line. Therefore, even when the characteristics of TFTs forming respective current source circuits vary widely, variation in signal currents among the signal lines can be suppressed, and unevenness in emission luminance can be suppressed.
摘要翻译：布置用于向具有发光元件的各个像素电路提供信号电流的信号线。信号线驱动电路通过使用开关电路接通/断开来切换信号线上产生与图像数据相对应的信号电流，通过切换由针对图像数据的各个比特设置的比特加权电流源电路输出的比特加权电流取决于相应的位。每个电流源电路具有基于从参考电流线提供的比特加权电流的参考电流来校正其自身输出的比特加权电流的电平的功能。因此，即使形成各个电流源电路的TFT的特性变化很大，也可以抑制信号线之间的信号电流的变化，能够抑制发光亮度的不均匀。

9. 发明授权

US06884699B1 Process and unit for production of polycrystalline silicon film 有权
标题翻译：生产多晶硅膜的工艺和单元
公开(公告)号：US06884699B1
公开(公告)日：2005-04-26
申请号：US10148562
申请日：2000-10-06
申请人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
发明人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
IPC分类号： C23C14/58 , H01L21/20 , H01L21/336 , H01L21/00 , H01L21/331 , H01L21/26
CPC分类号： C23C14/5813 , B23K26/0604 , B23K26/0738 , B23K26/0838 , B23K26/352 , B23K2101/40 , B23K2103/52 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L29/66757 , Y10S438/969
摘要： A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
摘要翻译：一种制造多晶硅膜的方法包括在玻璃基板上形成具有与第一区域接触的第一区域和第二区域的非晶硅膜，通过用非晶硅膜的第一区域照射非晶硅膜形成第一多晶部分，具有不小于390nm且不大于640nm的波长的激光，并且通过照射第二区域和形成与第一多晶部分接触的第二多晶部分的区域的部分形成第二多晶部分，具有激光的非晶硅膜。

10. 发明授权

US06573161B1 Thin film semiconductor device fabrication process 有权
标题翻译：薄膜半导体器件制造工艺
公开(公告)号：US06573161B1
公开(公告)日：2003-06-03
申请号：US09674645
申请日：2000-11-02
申请人： Mitsutoshi Miyasaka , Tetsuya Ogawa , Hidetada Tokioka , Yukio Satoh , Mitsuo Inoue , Tomohiro Sasagawa
发明人： Mitsutoshi Miyasaka , Tetsuya Ogawa , Hidetada Tokioka , Yukio Satoh , Mitsuo Inoue , Tomohiro Sasagawa
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/04 , H01L29/66757
摘要： A fabrication process is provided for semiconductor devices having a crystalline semiconductor film formed on a substrate, the semiconductor film being an active layer of a transistor and being mainly composed of silicon, and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film. The semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.
摘要翻译：本发明提供一种半导体器件的制造方法，该半导体器件具有在基板上形成的结晶半导体膜，该半导体膜是主要由硅组成的晶体管的有源层，并且至少包括形成氧化硅的底层保护层制造步骤膜作为衬底上的底层保护层; 在衬底保护层上形成主要由硅构成的半导体膜的第一处理步骤; 以及在半导体膜上照射脉冲激光的第二处理步骤。半导体膜被脉冲激光照射，脉冲激光的波长在370和710nm之间。结果，使用低温工艺，可以简单可靠地制造高性能薄膜半导体器件。

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