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1. 发明授权

US06807971B2 Heat treatment apparatus and cleaning method of the same 失效
标题翻译：热处理装置及其清洗方法相同
公开(公告)号：US06807971B2
公开(公告)日：2004-10-26
申请号：US10080964
申请日：2002-02-21
申请人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
发明人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
IPC分类号： B08B700
CPC分类号： C23C16/345 , C23C16/402 , C23C16/4405 , C23C16/4412
摘要： A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.
摘要翻译：半导体水被包含在反应管中，反应管通过排气管排出，同时向反应管中供应氨和二氯硅烷。通过氨和二氯硅烷的反应将氮化硅膜沉积在待热处理的物体上。随后，将TEOS供给到反应管中，同时反应管通过排气管排出。通过解析TEOS将氧化硅膜沉积在物体上。形成氮化硅膜和氧化硅膜的叠层的半导体晶片从反应管中卸载。然后，通过在其中引入氟化氢除去附着在排气管和反应管中的反应性产物，从而清洗管道排气管的顶端分成两个通风口，其中之一用于排放废气形成膜，另一个用于排出用于清洁管道的HF气体。

2. 发明授权

US06383300B1 Heat treatment apparatus and cleaning method of the same 有权
标题翻译：热处理装置及其清洗方法相同
公开(公告)号：US06383300B1
公开(公告)日：2002-05-07
申请号：US09448879
申请日：1999-11-24
申请人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
发明人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
IPC分类号： C23C1600
CPC分类号： C23C16/345 , C23C16/402 , C23C16/4405 , C23C16/4412
摘要： A semiconductor wafer is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer on which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipes. The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.
摘要翻译：半导体晶片包含在反应管中，反应管通过排气管排出，同时向反应管中供应氨和二氯硅烷。通过氨和二氯硅烷的反应将氮化硅膜沉积在待热处理的物体上。随后，将TEOS供给到反应管中，同时反应管通过排气管排出。通过解析TEOS将氧化硅膜沉积在物体上。在其上形成有氮化硅膜和氧化硅膜的叠层的半导体晶片从反应管中卸载。然后，通过在其中引入氟化氢除去附着在排气管和反应管中的反应性产物，从而清洗管道。排气管的顶端分为两个通风口，其中一个用于排放废气，用于形成膜，另一个用于排放HF气体用于清洗管道。

3. 发明申请

US20050028738A1 Thermal treating apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20050028738A1
公开(公告)日：2005-02-10
申请号：US10494970
申请日：2002-09-27
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , H01L21/205 , H01L21/22 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

4. 发明授权

US07479619B2 Thermal processing unit 有权
标题翻译：热处理单元
公开(公告)号：US07479619B2
公开(公告)日：2009-01-20
申请号：US11487434
申请日：2006-07-17
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： F27B5/14 , F27D11/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

5. 发明授权

US06171104B2 Oxidation treatment method and apparatus 有权
标题翻译：氧化处理方法和装置
公开(公告)号：US06171104B2
公开(公告)日：2001-01-09
申请号：US09369371
申请日：1999-08-06
申请人： Yukimasa Saito , Hiroyuki Yamamoto
发明人： Yukimasa Saito , Hiroyuki Yamamoto
IPC分类号： F27B912
CPC分类号： C30B33/005 , C30B29/06
摘要： In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is increased to a predetermined treatment temperature, and the semiconductor wafers are subjected to an oxidation treatment, the temperature-increasing step is performed under a reduced pressure. This makes it possible to suppress the formation of natural oxide films during the temperature-increasing step, and thus makes it possible to form an extremely thin film of a superior quality on the semiconductor wafer.
摘要翻译：在将半导体晶片容纳在预先加热到预定温度的处理炉内的方法中，将处理炉内的温度升高到规定的处理温度，对半导体晶片进行氧化处理，增加步骤在减压下进行。这使得可以在升温步骤中抑制天然氧化物膜的形成，从而可以在半导体晶片上形成质量优异的极薄膜。

6. 发明授权

US07144823B2 Thermal treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US07144823B2
公开(公告)日：2006-12-05
申请号：US10494970
申请日：2002-09-27
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： H01L21/31
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

7. 发明申请

US20060258170A1 Thermal processing unit 有权
公开(公告)号：US20060258170A1
公开(公告)日：2006-11-16
申请号：US11487434
申请日：2006-07-17
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： H01L21/31
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

8. 发明授权

US09060088B2 Image processing apparatus with power supply/stop control 有权
标题翻译：具有电源/停止控制的图像处理装置
公开(公告)号：US09060088B2
公开(公告)日：2015-06-16
申请号：US13767236
申请日：2013-02-14
申请人： Hiroyuki Yamamoto
发明人： Hiroyuki Yamamoto
IPC分类号： G06K15/00 , H04N1/00
CPC分类号： H04N1/00891 , H04N1/00925 , H04N2201/0094
摘要： There is provided an image processing apparatus including an image processing section, a power source section, a power source operation section, and a controller. The controller may be configured to perform determining whether or not a state of the image processing apparatus is a special state when a power control operation is started, determining whether or not the power control operation is the special power control operation, and controlling the power source section to carry out an operation according to the power control operation when the state is not the special state, or when the state is the special state and when the power control operation is the special power control operation, but controlling the power source section not to carry out the operation when the state is the special state and when the power control operation is not the special power control operation.
摘要翻译：提供了一种包括图像处理部分，电源部分，电源操作部分和控制器的图像处理装置。控制器可以被配置为执行在开始功率控制操作时图像处理装置的状态是否是特殊状态，确定功率控制操作是否是特殊功率控制操作，以及控制电源部分在状态不是特殊状态时进行根据功率控制操作的操作，或者当状态是特殊状态时，以及当电力控制操作是特殊功率控制操作时，但是控制电源部不是在状态为特殊状态时进行动作，电力控制动作不是特殊的动力控制动作。

9. 发明授权

US09004804B2 Attachment structure and attachment unit 有权
标题翻译：附件结构和附件单元
公开(公告)号：US09004804B2
公开(公告)日：2015-04-14
申请号：US13500488
申请日：2010-10-12
申请人： Hiroyuki Yamamoto , Tomoaki Nagayama
发明人： Hiroyuki Yamamoto , Tomoaki Nagayama
IPC分类号： F16B21/00 , F16B5/12
CPC分类号： F16B5/126 , Y10T29/53 , Y10T403/60 , Y10T403/66
摘要： An elastically deformable bridging piece includes an engaging protruding part between two ends of the piece, insertion of a portion of an attaching member in a direction intersecting a longitudinal direction of the bridging piece is permitted by elastically deforming the bridging piece by contacting with the engaging protruding part with the portion, and the engaging protruding part engages an engaging hole formed in the portion at an insertion terminating position by elastically returning the bridging piece. A restricting part restricting elastic deformation of the bridging piece is provided. When inserting the portion, the restricting part inclines the bridging piece to position the engaging protruding part on the obliquely downward side, and when a force in a reverse direction to the inserting direction acts on the portion located at the insertion terminating position, the restricting part restricts inclination of the bridging piece, which is reversely-oriented to the former inclination.
摘要翻译：可弹性变形的桥接件包括在件的两端之间的接合突出部分，通过使桥接件与接合突出部接触而使桥接件弹性变形，允许连接构件的一部分沿着与桥接件的纵向相交的方向插入部分，并且接合突出部通过弹性地返回桥接件而接合形成在插入终止位置处的该部分中的接合孔。提供限制桥接件的弹性变形的限制部件。当插入该部分时，限制部分使桥接件倾斜以将接合突出部分定位在倾斜的下侧，并且当与插入方向相反的方向的力作用在位于插入终止位置的部分时，限制部分限制桥接件的倾斜度，这反过来倾向于前者的倾斜度。

10. 发明授权

US08970849B2 Tomography apparatus and tomogram correction processing method 有权
标题翻译：断层扫描仪和断层图像校正处理方法
公开(公告)号：US08970849B2
公开(公告)日：2015-03-03
申请号：US13375259
申请日：2010-06-02
申请人： Yukio Sakagawa , Makoto Sato , Hiroyuki Yamamoto
发明人： Yukio Sakagawa , Makoto Sato , Hiroyuki Yamamoto
IPC分类号： G01B11/02 , A61B3/10
CPC分类号： A61B3/102
摘要： This invention realizes accurate positional offset correction between a plurality of tomograms captured by using a tomography apparatus. The invention is a tomography apparatus which corrects the positional offsets between a plurality of two-dimensional tomograms constituting a three-dimensional tomogram. This apparatus includes a tomogram analysis unit (120) which extracts feature amounts representing the tissue of a measurement target, a tomogram selection unit (140) which selects a standard two-dimensional tomogram from the plurality of two-dimensional tomograms based on the feature amounts, and a tomogram position correction unit (150) which calculates the positional offset amount between the nth two-dimensional tomogram adjacent to the standard two-dimensional tomogram and the (n−1)th two-dimensional tomogram.
摘要翻译：本发明实现了通过使用断层摄影装置捕获的多个断层图像之间的精确的位置偏移校正。本发明是校正构成三维断层图像的多个二维断层图像之间的位置偏移的断层摄影装置。该装置包括提取表示测定对象的组织的特征量的断层图像分析部（120），根据特征量从多个二维断层图中选择标准的二维断层图像的断层图像选择部（140）以及断层图像位置校正单元，其计算与标准二维断层图像相邻的第n个二维断层图像与第（n-1）个二维断层图像之间的位置偏移量。

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