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1. 发明授权

US07479619B2 Thermal processing unit 有权
标题翻译：热处理单元
公开(公告)号：US07479619B2
公开(公告)日：2009-01-20
申请号：US11487434
申请日：2006-07-17
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： F27B5/14 , F27D11/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

2. 发明申请

US20050028738A1 Thermal treating apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20050028738A1
公开(公告)日：2005-02-10
申请号：US10494970
申请日：2002-09-27
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , H01L21/205 , H01L21/22 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

3. 发明授权

US07144823B2 Thermal treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US07144823B2
公开(公告)日：2006-12-05
申请号：US10494970
申请日：2002-09-27
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： H01L21/31
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

4. 发明申请

US20060258170A1 Thermal processing unit 有权
公开(公告)号：US20060258170A1
公开(公告)日：2006-11-16
申请号：US11487434
申请日：2006-07-17
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： H01L21/31
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

5. 发明授权

US07651733B2 Method for forming a vapor phase growth film 有权
标题翻译：形成气相生长膜的方法
公开(公告)号：US07651733B2
公开(公告)日：2010-01-26
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体喷出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

6. 发明申请

US20060257568A1 Vapor-phase growing unit 有权
标题翻译：气相生长装置
公开(公告)号：US20060257568A1
公开(公告)日：2006-11-16
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体吐出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

7. 发明授权

US06171104B2 Oxidation treatment method and apparatus 有权
标题翻译：氧化处理方法和装置
公开(公告)号：US06171104B2
公开(公告)日：2001-01-09
申请号：US09369371
申请日：1999-08-06
申请人： Yukimasa Saito , Hiroyuki Yamamoto
发明人： Yukimasa Saito , Hiroyuki Yamamoto
IPC分类号： F27B912
CPC分类号： C30B33/005 , C30B29/06
摘要： In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is increased to a predetermined treatment temperature, and the semiconductor wafers are subjected to an oxidation treatment, the temperature-increasing step is performed under a reduced pressure. This makes it possible to suppress the formation of natural oxide films during the temperature-increasing step, and thus makes it possible to form an extremely thin film of a superior quality on the semiconductor wafer.
摘要翻译：在将半导体晶片容纳在预先加热到预定温度的处理炉内的方法中，将处理炉内的温度升高到规定的处理温度，对半导体晶片进行氧化处理，增加步骤在减压下进行。这使得可以在升温步骤中抑制天然氧化物膜的形成，从而可以在半导体晶片上形成质量优异的极薄膜。

8. 发明授权

US06807971B2 Heat treatment apparatus and cleaning method of the same 失效
标题翻译：热处理装置及其清洗方法相同
公开(公告)号：US06807971B2
公开(公告)日：2004-10-26
申请号：US10080964
申请日：2002-02-21
申请人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
发明人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
IPC分类号： B08B700
CPC分类号： C23C16/345 , C23C16/402 , C23C16/4405 , C23C16/4412
摘要： A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.
摘要翻译：半导体水被包含在反应管中，反应管通过排气管排出，同时向反应管中供应氨和二氯硅烷。通过氨和二氯硅烷的反应将氮化硅膜沉积在待热处理的物体上。随后，将TEOS供给到反应管中，同时反应管通过排气管排出。通过解析TEOS将氧化硅膜沉积在物体上。形成氮化硅膜和氧化硅膜的叠层的半导体晶片从反应管中卸载。然后，通过在其中引入氟化氢除去附着在排气管和反应管中的反应性产物，从而清洗管道排气管的顶端分成两个通风口，其中之一用于排放废气形成膜，另一个用于排出用于清洁管道的HF气体。

9. 发明授权

US06383300B1 Heat treatment apparatus and cleaning method of the same 有权
标题翻译：热处理装置及其清洗方法相同
公开(公告)号：US06383300B1
公开(公告)日：2002-05-07
申请号：US09448879
申请日：1999-11-24
申请人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
发明人： Yukimasa Saito , Hitoshi Murata , Hiroyuki Yamamoto
IPC分类号： C23C1600
CPC分类号： C23C16/345 , C23C16/402 , C23C16/4405 , C23C16/4412
摘要： A semiconductor wafer is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer on which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipes. The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.
摘要翻译：半导体晶片包含在反应管中，反应管通过排气管排出，同时向反应管中供应氨和二氯硅烷。通过氨和二氯硅烷的反应将氮化硅膜沉积在待热处理的物体上。随后，将TEOS供给到反应管中，同时反应管通过排气管排出。通过解析TEOS将氧化硅膜沉积在物体上。在其上形成有氮化硅膜和氧化硅膜的叠层的半导体晶片从反应管中卸载。然后，通过在其中引入氟化氢除去附着在排气管和反应管中的反应性产物，从而清洗管道。排气管的顶端分为两个通风口，其中一个用于排放废气，用于形成膜，另一个用于排放HF气体用于清洗管道。

10. 发明授权

US09060088B2 Image processing apparatus with power supply/stop control 有权
标题翻译：具有电源/停止控制的图像处理装置
公开(公告)号：US09060088B2
公开(公告)日：2015-06-16
申请号：US13767236
申请日：2013-02-14
申请人： Hiroyuki Yamamoto
发明人： Hiroyuki Yamamoto
IPC分类号： G06K15/00 , H04N1/00
CPC分类号： H04N1/00891 , H04N1/00925 , H04N2201/0094
摘要： There is provided an image processing apparatus including an image processing section, a power source section, a power source operation section, and a controller. The controller may be configured to perform determining whether or not a state of the image processing apparatus is a special state when a power control operation is started, determining whether or not the power control operation is the special power control operation, and controlling the power source section to carry out an operation according to the power control operation when the state is not the special state, or when the state is the special state and when the power control operation is the special power control operation, but controlling the power source section not to carry out the operation when the state is the special state and when the power control operation is not the special power control operation.
摘要翻译：提供了一种包括图像处理部分，电源部分，电源操作部分和控制器的图像处理装置。控制器可以被配置为执行在开始功率控制操作时图像处理装置的状态是否是特殊状态，确定功率控制操作是否是特殊功率控制操作，以及控制电源部分在状态不是特殊状态时进行根据功率控制操作的操作，或者当状态是特殊状态时，以及当电力控制操作是特殊功率控制操作时，但是控制电源部不是在状态为特殊状态时进行动作，电力控制动作不是特殊的动力控制动作。

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