专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06519137B1 Solid electrolytic capacitor and production method thereof, and conductive polymer polymerizing oxidizing agent solution 有权
公开(公告)号：US06519137B1
公开(公告)日：2003-02-11
申请号：US09807760
申请日：2001-07-16
申请人： Yukihiro Nitta , Yoshiyuki Mori , Munehiro Morokuma , Yuki Murata , Kazuyo Saito , Tsuyoshi Yoshino , Yoshihiro Watanabe , Hideki Masumi , Takehiko Nakahara , Ichiro Yamashita
发明人： Yukihiro Nitta , Yoshiyuki Mori , Munehiro Morokuma , Yuki Murata , Kazuyo Saito , Tsuyoshi Yoshino , Yoshihiro Watanabe , Hideki Masumi , Takehiko Nakahara , Ichiro Yamashita
IPC分类号： H01G902
CPC分类号： H01G9/025 , H01G9/15 , Y10T29/417
摘要： The present invention relates to a solid electrolytic capacitor having a large capacitance and a higher resistance to heat and adapted as a surface-mount device and a method of producing the same. The invention may include the followings features: (1) a layer containing an electroconductive polymer and a less conductive polymer is provided on a dielectric oxide film on the positive electrode foil; (2) a separator of a polyester resin based unwoven fabric made by span bonding and/or wet processing a resin material is sandwiched between the positive electrode foil and the negative electrode foil and rolled together to form a capacitor element which also include a solid electrolyte; (3) a separator is sandwiched between the positive electrode foil and the negative electrode foil coated with a dielectric oxide film exhibiting a withstand voltage of 0.8 to 10 V and rolled together to form a capacitor element which also include a solid electrolyte of an electrically conductive polymer; (4) the negative electrode foil is coated with a layer made of at least a metallic material selected from titanium, zirconium, hafnium, and its compound or of a carbon material; (5) the capacitor element has its content of, water adjusted to not higher than 1% by weight and is enclosed in an outer case; (6-A) the solid electrolyte is a conductive polymer prepared by chemically polymerizing a heterocyclic monomer with the use of an oxidizing solution of which the weight ratio of bivalent iron to trivalent iron is not higher than 0.02; (6-B) the solid electrolyte is a conductive polymer prepared by chemically polymerizing a heterocyclic monomer with the use of an oxidizing solution of which the molar ratio of aliphatic and/or aromatic sulfonic acid to trivalent iron ranges from 3.0 to 3.5; and (7) the solid electrolyte is a conductive polymer prepared by chemically polymerizing a heterocyclic monomer in which the remaining of a basic organic solvent is not higher than 0.8%.

2. 发明授权

US5305366A Thin film forming apparatus 失效
标题翻译：薄膜成型装置
公开(公告)号：US5305366A
公开(公告)日：1994-04-19
申请号：US817660
申请日：1992-01-07
申请人： Takehiko Nakahara , Masao Koshinaka , Nobuyuki Kosaka , Toshimasa Tomoda
发明人： Takehiko Nakahara , Masao Koshinaka , Nobuyuki Kosaka , Toshimasa Tomoda
IPC分类号： G01N23/223 , G01N23/225 , H01L21/66
CPC分类号： G01N23/2252 , G01N23/223 , G01N23/2257 , G01N2223/076
摘要： This invention relates to a method and apparatus for analyzing a plurality of elements that are present on the surface of a material of interest or in its neighborhood, as well as a thin-film forming apparatus that is capable of measuring the composition of a sample during thin film formation in the process of semi-conductor fabrication. The apparatus are characterized in that a detector is isolated from the light and heat generated in a sample making mechanism by means of a shield which is not only heat-resistant but also transmissive of fluorescent X-ray containing soft X-rays of 1 Kev and below and that a mirror for total reflection of X-rays which is equipped with slits capable of adjusting the incident and exit angles of fluorescent X-rays from the sample excited with an excitation source as well as the ranges of those angles is provided either at the entrance or exit of said shield or at both.
摘要翻译：本发明涉及一种用于分析存在于感兴趣的材料的表面上或其附近的多个元素的方法和装置，以及能够测量样品组成的薄膜形成装置半导体制造过程中的薄膜形成。该装置的特征在于，检测器借助于不仅耐热而且还透射含有1Kev的软X射线的荧光X射线的屏蔽而与样品制造机构中产生的光和热隔离，并且配备有能够调节来自激发源激发的样品的荧光X射线的入射角和出射角度的狭缝以及这些角度的范围的X射线的全反射镜，可以在所述护罩的入口或出口或两者。

3. 发明授权

US08294236B2 Semiconductor device having dual-STI and manufacturing method thereof 有权
标题翻译：具有双STI的半导体器件及其制造方法
公开(公告)号：US08294236B2
公开(公告)日：2012-10-23
申请号：US12946311
申请日：2010-11-15
申请人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
发明人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
IPC分类号： H01L21/70
CPC分类号： H01L27/11526 , H01L21/76229 , H01L27/105 , H01L27/1052 , H01L27/11536
摘要： A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.
摘要翻译：具有存储单元区域和外围电路区域的半导体器件包括硅衬底和由在硅衬底的表面上形成的氧化硅膜实现的隔离结构。存储器单元区域中的隔离结构的深度小于外围电路区域中的隔离结构的深度，并且隔离结构在存储单元区域中的隔离高度与隔离的隔离高度基本相同外围电路区域的结构。因此可以提高半导体器件的可靠性。

4. 发明授权

US07858490B2 Semiconductor device having dual-STI and manufacturing method thereof 有权
标题翻译：具有双STI的半导体器件及其制造方法
公开(公告)号：US07858490B2
公开(公告)日：2010-12-28
申请号：US12076038
申请日：2008-03-13
申请人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
发明人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
IPC分类号： H01L21/76
CPC分类号： H01L27/11526 , H01L21/76229 , H01L27/105 , H01L27/1052 , H01L27/11536
摘要： A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.
摘要翻译：具有存储单元区域和外围电路区域的半导体器件包括硅衬底和由在硅衬底的表面上形成的氧化硅膜实现的隔离结构。存储器单元区域中的隔离结构的深度小于外围电路区域中的隔离结构的深度，并且隔离结构在存储单元区域中的隔离高度与隔离的隔离高度基本相同外围电路区域的结构。因此可以提高半导体器件的可靠性。

5. 发明申请

US20130258505A1 OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光学装置及其制造方法
公开(公告)号：US20130258505A1
公开(公告)日：2013-10-03
申请号：US13778472
申请日：2013-02-27
申请人： Nobuyuki YASUI , Takehiko Nakahara , Masaya Shimono , Keiichi Fukuda , Keita Mochizuki , Hiroshi Aruga , Kenichi Uto , Tadashi Murao , Hidekazu Kodera
发明人： Nobuyuki YASUI , Takehiko Nakahara , Masaya Shimono , Keiichi Fukuda , Keita Mochizuki , Hiroshi Aruga , Kenichi Uto , Tadashi Murao , Hidekazu Kodera
IPC分类号： G02B7/00
CPC分类号： G02B7/003 , G02B6/3656 , G02B6/4225 , G02B6/4226 , G02B6/4237 , G02B7/023
摘要： A method of manufacturing an optical apparatus having an optical element, a holding member, and a base member includes preparing the holding member and fixing the optical element to the first member. The method further includes fixing a second member of the holding member to the base member and plastically deforming a first member of the holding member and the second member to adjust the position of the optical element.
摘要翻译：一种制造具有光学元件，保持构件和基底构件的光学装置的方法包括制备保持构件并将光学元件固定到第一构件。该方法还包括将保持构件的第二构件固定到基座构件并使保持构件和第二构件的第一构件塑性变形以调节光学元件的位置。

6. 发明申请

US20080213971A1 Semiconductor device having dual-STI and manufacturing method thereof 有权
标题翻译：具有双STI的半导体器件及其制造方法
公开(公告)号：US20080213971A1
公开(公告)日：2008-09-04
申请号：US12076038
申请日：2008-03-13
申请人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
发明人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
IPC分类号： H01L21/762
CPC分类号： H01L27/11526 , H01L21/76229 , H01L27/105 , H01L27/1052 , H01L27/11536
摘要： A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.
摘要翻译：具有存储单元区域和外围电路区域的半导体器件包括硅衬底和由在硅衬底的表面上形成的氧化硅膜实现的隔离结构。存储器单元区域中的隔离结构的深度小于外围电路区域中的隔离结构的深度，并且隔离结构在存储单元区域中的隔离高度与隔离的隔离高度基本相同外围电路区域的结构。因此可以提高半导体器件的可靠性。

7. 发明申请

US20060035437A1 Semiconductor device having dual-STI and manufacturing method thereof 审中-公开
标题翻译：具有双STI的半导体器件及其制造方法
公开(公告)号：US20060035437A1
公开(公告)日：2006-02-16
申请号：US11200262
申请日：2005-08-10
申请人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
发明人： Noriyuki Mitsuhira , Takehiko Nakahara , Yasusuke Suzuki , Jun Sumino
IPC分类号： H01L21/8238 , H01L21/76
CPC分类号： H01L27/11526 , H01L21/76229 , H01L27/105 , H01L27/1052 , H01L27/11536
摘要： A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a depth of the isolation structure in the peripheral circuit area, and an isolation height of the isolation structure in the memory cell area is substantially the same as an isolation height of the isolation structure in the peripheral circuit area. Reliability of the semiconductor device can thus be improved.
摘要翻译：具有存储单元区域和外围电路区域的半导体器件包括硅衬底和由在硅衬底的表面上形成的氧化硅膜实现的隔离结构。存储器单元区域中的隔离结构的深度小于外围电路区域中的隔离结构的深度，并且隔离结构在存储单元区域中的隔离高度与隔离的隔离高度基本相同外围电路区域的结构。因此可以提高半导体器件的可靠性。

8. 发明授权

US06620306B2 Method of manufacturing electrode foil for aluminum electrolytic capacitor and AC power supply unit 有权
标题翻译：制造铝电解电容器和交流电源单元的电极箔的方法
公开(公告)号：US06620306B2
公开(公告)日：2003-09-16
申请号：US09993628
申请日：2001-11-27
申请人： Mitsuhisa Yoshimura , Takehiko Nakahara , Kazunari Hayashi , Hiromi Nakanishi , Naomi Kurihara
发明人： Mitsuhisa Yoshimura , Takehiko Nakahara , Kazunari Hayashi , Hiromi Nakanishi , Naomi Kurihara
IPC分类号： B23H300
CPC分类号： H01G9/055 , C25D11/04 , C25F3/04
摘要： A method of manufacturing electrode foil for aluminum electrolytic capacitors and an AC power supply unit used therewith are disclosed. An etching is performed on an aluminum foil immersed in an electrolytic solution by applying an AC current to a pair of electrodes in the electrolytic solution. A waveform of the AC current is a deformed sine wave including a period of time (a) when an electric current rises from zero to a peak value, and another period of time (b) when the electric current falls from the peak value to zero. With the periods of time (a) and (b) made different from each other, the surface area of the aluminum foil is efficiently expanded by the etching and an enhancement of electric capacity of the electrode foil is obtained.
摘要翻译：公开了一种制造用于铝电解电容器的电极箔的方法和与其一起使用的AC电源单元。通过向电解液中的一对电极施加AC电流，对浸在电解液中的铝箔进行蚀刻。 AC电流的波形是包括当电流从零上升到峰值的时间（a）的时间的变形的正弦波，以及当电流从峰值下降到零时的另一个时间段（b）。在时间（a）和（b）彼此不同的情况下，通过蚀刻有效地扩展铝箔的表面积，并且获得电极箔的电容的增强。

9. 发明授权

US5317618A Light transmission type vacuum separating window and soft X-ray transmitting window 失效
标题翻译：透光式真空分离窗和软X射线透射窗
公开(公告)号：US5317618A
公开(公告)日：1994-05-31
申请号：US4596
申请日：1993-01-14
申请人： Takehiko Nakahara , Masao Koshinaka , Nobuyuki Kosaka
发明人： Takehiko Nakahara , Masao Koshinaka , Nobuyuki Kosaka
IPC分类号： G21K5/00 , B01J19/12 , G21K1/10 , H01J5/18 , H01J35/18 , H05G1/00 , G21K1/00
CPC分类号： B01J19/125 , G21K1/10 , H01J35/18 , H01J5/18
摘要： A light transmission type vacuum separating window for separating a vacuum area into a plurality of vacuum areas through a film that transmits the light of a wavelength area such as an X-ray area and an infrared ray area. This vacuum separating window includes a thin film that transmits the light. The vacuum area is separated into the plurality of vacuum areas through this thin film. The light is any one of an X-ray, an infrared ray, a visible ray and an ultraviolet ray. A metal or an alloy that turns out a liquid in a range of temperature of a using environment may be provided between the thin film and the support member for supporting the thin film. This metal is preferably gallium. The alloy preferably contains gallium and, more preferably, consists of 75.5 weight % gallium and 24.5 weight % indium.
摘要翻译：一种透光型真空分离窗，用于通过透射诸如X射线区域和红外线区域之类的波长区域的光而将真空区域分离成多个真空区域。该真空分离窗包括透射光的薄膜。真空区域通过该薄膜分离成多个真空区域。光是X射线，红外线，可见光和紫外线中的任一种。可以在薄膜和用于支撑薄膜的支撑构件之间设置在使用环境温度范围内流出液体的金属或合金。该金属优选为镓。该合金优选含有镓，更优选由75.5重量％的镓和24.5重量％的铟组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式