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    • 6. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20050139908A1
    • 2005-06-30
    • US11045101
    • 2005-01-31
    • Jun SuminoSatoshi Shimizu
    • Jun SuminoSatoshi Shimizu
    • H01L21/76H01L21/762H01L21/8247H01L27/115H01L29/788H01L29/792H01L29/76
    • H01L27/11521H01L21/76232H01L21/76235H01L27/115
    • A semiconductor device includes: a silicon substrate, having a main surface, in which trenches are formed; element isolation oxide films filling in trenches; a tunnel oxide film, formed on main surface located between element isolation oxide film and element isolation oxide film, having birds beak portions in birds beak forms that bring into contact with element isolation oxide film and element isolation oxide film, respectively; and a polysilicon film, formed on tunnel oxide film, having a thickness exceeding 0 and being less than 50 nm in an intermediate portion between element isolation oxide film and element isolation oxide film, and being thinner than the above thickness on birds beak portions. Thereby, it is possible to provide a semiconductor device wherein birds beaks are formed in the gate insulating film so as to have the desired dimensions and wherein the gate insulating film has excellent electrical characteristics.
    • 半导体器件包括:具有主表面的硅衬底,其中形成沟槽; 填充在沟槽中的元件隔离氧化膜; 形成在元件隔离氧化膜和元件隔离氧化膜之间的主表面上的隧道氧化膜,分别具有与元件隔离氧化膜和元件隔离氧化膜接触的鸟喙部分的鸟嘴部分; 以及在元件隔离氧化膜和元件隔离氧化膜之间的中间部分中,在隧道氧化膜上形成的厚度超过0且小于50nm的多晶硅膜,并且在鸟嘴部分上比上述厚度薄。 由此,可以提供一种半导体器件,其中在栅极绝缘膜中形成鸟喙以具有期望的尺寸,并且其中栅极绝缘膜具有优异的电气特性。