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1. 发明申请

US20120126283A1 HIGH POWER, HIGH EFFICIENCY AND LOW EFFICIENCY DROOP III-NITRIDE LIGHT-EMITTING DIODES ON SEMIPOLAR SUBSTRATES 审中-公开
标题翻译：高功率，高效率和低效率的三极发光二极管在二极体基板上
公开(公告)号：US20120126283A1
公开(公告)日：2012-05-24
申请号：US13283259
申请日：2011-10-27
申请人： Yuji Zhao , Junichi Sonoda , Chih-Chien Pan , Shinichi Tanaka , Steven P. DenBaars , Shuji Nakamura
发明人： Yuji Zhao , Junichi Sonoda , Chih-Chien Pan , Shinichi Tanaka , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075 , H01L33/32
摘要： A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.
摘要翻译：在衬底的半极{20-2-1}平面上生长的III族氮化物发光二极管，其特征在于高功率，高效率和低效率下垂。

2. 发明申请

US20120126198A1 LIGHT EMITTING DIODE FOR DROOP IMPROVEMENT 审中-公开
标题翻译：发光二极管驱动改进
公开(公告)号：US20120126198A1
公开(公告)日：2012-05-24
申请号：US13283193
申请日：2011-10-27
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Junichi Sonoda , Hung Tse Chen , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Junichi Sonoda , Hung Tse Chen , Chih-Chien Pan
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/04 , H01L33/20
摘要： A light emitting diode (LED) device structure with a reduced Droop effect, and a method for fabricating the LED device structure. The LED is a III-nitride-based LED having an active layer or emitting layer comprised of a multi-quantum-well (MQW) structure, wherein there are eight or more quantum wells (QWs) in the MQW structure, and more preferably, at least nine QWs in the MQW structure. Moreover, the QWs in the MQW structure are grown at temperatures different from barrier layers in the MQW structure, wherein the barrier layers in the MQW structure are grown a temperatures at least 40° C. higher than the QWs in the MQW structure.
摘要翻译：具有降低的Droop效应的发光二极管（LED）器件结构以及制造LED器件结构的方法。 LED是具有由多量子阱（MQW）结构构成的有源层或发射层的III族氮化物基LED，其中在MQW结构中存在八个或更多个量子阱（QW），更优选地， MQW结构中至少有九个QW。此外，MQW结构中的QWs在不同于MQW结构中的阻挡层的温度下生长，其中MQW结构中的阻挡层的生长比MQW结构中的QW高至少40℃。

3. 发明授权

US08686397B2 Low droop light emitting diode structure on gallium nitride semipolar substrates 有权
标题翻译：氮化镓半极性衬底上的低垂直发光二极管结构
公开(公告)号：US08686397B2
公开(公告)日：2014-04-01
申请号：US13493430
申请日：2012-06-11
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
摘要翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL）地区。本发明还包括制造这种装置的方法。

4. 发明申请

US20120313077A1 HIGH EMISSION POWER AND LOW EFFICIENCY DROOP SEMIPOLAR BLUE LIGHT EMITTING DIODES 审中-公开
标题翻译：高排放功率和低效二极管蓝光发光二极管
公开(公告)号：US20120313077A1
公开(公告)日：2012-12-13
申请号：US13493483
申请日：2012-06-11
申请人： Shuji Nakamura , Steven P. DenBaars , Daniel F. Feezell , Chih-Chien Pan , Yuji Zhao , Shinichi Tanaka
发明人： Shuji Nakamura , Steven P. DenBaars , Daniel F. Feezell , Chih-Chien Pan , Yuji Zhao , Shinichi Tanaka
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0062 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L33/06 , H01L33/16
摘要： High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).
摘要翻译：高发射功率和低效率下垂半极蓝光发光二极管（LED）。

5. 发明申请

US20120313076A1 LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES 有权
标题翻译：氮化镓半导体基板上的低驱动发光二极管结构
公开(公告)号：US20120313076A1
公开(公告)日：2012-12-13
申请号：US13493430
申请日：2012-06-11
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
摘要翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL）地区。本发明还包括制造这种装置的方法。

6. 发明申请

US20120273796A1 HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE 审中-公开
标题翻译：用于氮化镓衬底的二极体（20-2-1）平面上制备的III族氮化物光电子器件的高吸收率和高极化比
公开(公告)号：US20120273796A1
公开(公告)日：2012-11-01
申请号：US13459963
申请日：2012-04-30
申请人： Yuji Zhao , Shinichi Tanaka , Chia-Yen Huang , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Yuji Zhao , Shinichi Tanaka , Chia-Yen Huang , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/0075 , H01L33/32
摘要： A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.
摘要翻译：在氮化镓（GaN）衬底的半极（20-2-1）平面上制造的III族氮化物光电子器件的特征在于高的铟吸收和高的偏振比。

7. 发明授权

US08949205B2 Information processing apparatus for processing application software and a patch file 有权
标题翻译：用于处理应用软件和补丁文件的信息处理设备
公开(公告)号：US08949205B2
公开(公告)日：2015-02-03
申请号：US12823597
申请日：2010-06-25
申请人： Shinichi Tanaka , Daisuke Mori
发明人： Shinichi Tanaka , Daisuke Mori
IPC分类号： G06F17/30 , G06F9/445
CPC分类号： G06F8/65
摘要： If a ROM medium is mounted on a media drive and a request for executing an application is received from an input device, a read controlling unit controls the media drive so that the media drive reads out a patch file from the ROM media and installs the patch file on a hard disk drive. After the patch file is installed, an execution processing unit applies the installed patch file and activates the game software.
摘要翻译：如果ROM介质被安装在介质驱动器上并且从输入设备接收到执行应用程序的请求，则读取控制单元控制介质驱动器，使得介质驱动器从ROM介质读出补丁文件并安装补丁文件在硬盘驱动器上。安装补丁文件后，执行处理单元应用已安装的补丁文件并激活游戏软件。

8. 发明授权

US08750147B2 Information processing device for determining related files for download 有权
标题翻译：用于确定用于下载的相关文件的信息处理装置
公开(公告)号：US08750147B2
公开(公告)日：2014-06-10
申请号：US13117820
申请日：2011-05-27
申请人： Akiko Iwaya , Shinichi Tanaka , Yasutaka Miwa
发明人： Akiko Iwaya , Shinichi Tanaka , Yasutaka Miwa
IPC分类号： H04L12/28 , H04J1/16
CPC分类号： G06F8/65 , G06F8/61
摘要： An activation history storage stores an activation history of applications. A determination unit refers to the activation history and determines a file that is related to an application and that should be downloaded from a server. A processing unit downloads the determined related file. The activation history storage maintains an activation history that maps identification information identifying an application into the latest activation date and time of the application, and the determination unit refers to the activation date and time and determines the related file to be downloaded.
摘要翻译：激活历史记录存储应用程序的激活历史记录。确定单元参考激活历史并确定与应用相关并且应该从服务器下载的文件。处理单元下载确定的相关文件。激活历史存储保持将识别应用的识别信息映射到应用的最新激活日期和时间的激活历史，并且确定单元参考激活日期和时间并确定要下载的相关文件。

9. 发明授权

US08613544B2 Band, wristwatch with the band and method of making the band 有权
标题翻译：乐队，手表带带和制作乐队的方法
公开(公告)号：US08613544B2
公开(公告)日：2013-12-24
申请号：US12873590
申请日：2010-09-01
申请人： Masaaki Kitahara , Shinichi Tanaka , Kazumi Nakahara , Yoji Honda , Katsuyuki Aizawa
发明人： Masaaki Kitahara , Shinichi Tanaka , Kazumi Nakahara , Yoji Honda , Katsuyuki Aizawa
IPC分类号： G04B37/00
CPC分类号： B29C70/70 , B29L2031/7434
摘要： A band, a wristwatch with the band and a method of making the band are described. The band includes a strip-like body with a series of holes provided therein along a length thereof for adjusting an effective length thereof. The body includes a band-shaped support layer of woven or knit fabric of bundles of one or more kinds of fibers, the fibers being selected from a group including carbon fibers, glass fibers, aramid fibers and boron fibers. The body also includes a first resin layer adhering closely to one surface of the support layer, and a second resin layer adhering closely to the other surface of the support layer. The fibers of the support layer extend at a predetermined angle to longitudinal and transverse directions of the body.
摘要翻译：描述带，带带的手表和制作带的方法。该带包括带状体，其带有沿其长度设置的一系列孔，用于调节其有效长度。该主体包括由一种或多种纤维组成的编织或编织织物的带状支撑层，所述纤维选自包括碳纤维，玻璃纤维，芳族聚酰胺纤维和硼纤维的组。主体还包括紧密地附着在支撑层的一个表面上的第一树脂层和紧密地附着在支撑层的另一个表面上的第二树脂层。支撑层的纤维以相对于身体的纵向和横向的预定角度延伸。

10. 发明申请

US20130085830A1 CUSTOMER'S COMING-TO-A-STORE ACCELERATION SYSTEM 审中-公开
标题翻译：客户即将到仓储加速系统
公开(公告)号：US20130085830A1
公开(公告)日：2013-04-04
申请号：US13699904
申请日：2011-05-19
申请人： Shinichi Tanaka
发明人： Shinichi Tanaka
IPC分类号： G06Q30/02
CPC分类号： G06Q30/0235 , G06Q30/02 , G06Q30/0201 , G06Q30/0207 , G06Q30/0226 , G06Q30/0238
摘要： A customer's coming-to-a-store acceleration system for presenting strong incentive to the customers for their coming to the store, and for accelerating customer's coming to the store and enabling to collect information on customer's coming to the store is provided.This customer's coming-to-a-store acceleration system comprises: a coming-to-a-store notice means for inputting coming-to-a-store notice information, a customer identification means for identifying a customer, a means for specifying the coming-to-a-store notice information of said customer, a collation means for collating coincidence or discrepancy between either the date or time of the customer's coming-to-a-store notice information or duration until the customer's coming-to-a-store or purchasing is made and either the date or time on/at which said customer's coming-to-a-store or purchasing was verified or duration until said verification was made, and an incentive presentation means for presenting an incentive to the customer on condition that it is verified by the collation means that either the date or time of the coming-to-a-store or the duration until the coming-to-a-store or purchasing was made is consistent with either the date or time on/at which said customer's coming-to-a-store or purchasing was verified or the duration until said verification was made.
摘要翻译：提供客户即将到来的加速系统，为客户提供强大的激励，帮助客户进入商店，加快客户的到来，并能够收集到客户来店的信息。该客户的即将到来的加速系统包括：即将到店的通知意味着输入即时通知信息，用于识别客户的客户识别装置，用于指定即将到来的通知信息的装置所述客户的存储通知信息，用于整理客户即将到店通知信息的日期或时间之间的一致性或差异的整理手段或持续时间，直到客户的即将到店或购买，以及所述客户的即将到达或购买已验证的日期或时间，或者直到所述验证完成为止的持续时间，以及激励呈现装置，用于向客户呈现激励，条件是验证手段验证，即将到店的日期或时间，或直到商店或采购所进行的持续时间是否与以下日期或时间一致：说客户的即将到来矿石或采购已经验证，或直到验证完成的期限。

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