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1. 发明申请

US20120189611A1 DIPEPTIDYL PEPTIDASE-4 INHIBITOR 审中-公开
公开(公告)号：US20120189611A1
公开(公告)日：2012-07-26
申请号：US13388913
申请日：2010-08-03
申请人： Yuji Tominaga , Shinichi Yokota , Hozumi Tanaka , Hideyuki Kishida , Masayasu Kitagawa , Hiroshi Tachi , Toru Ota
发明人： Yuji Tominaga , Shinichi Yokota , Hozumi Tanaka , Hideyuki Kishida , Masayasu Kitagawa , Hiroshi Tachi , Toru Ota
IPC分类号： A61K35/66 , C12P21/06 , A61P3/10
CPC分类号： A61K38/168 , A23L33/10 , A23L33/18 , A61K36/48 , C12P21/06 , C12Y304/14005 , Y02P20/52
摘要： The present invention aims to provide a DPP-4 inhibitor that is obtained by using a food as a raw material and that is suitable for oral ingestion from the viewpoints of flavor and absorbability, and a composition for the prevention and/or amelioration of diabetes which contains the DPP-4 inhibitor. The present invention provides a DPP-4 inhibitor obtained by treating an azuki bean or a kidney bean with a microorganism or a proteolytic enzyme produced by the microorganism. In particular, a preferable DPP-4 inhibitor can be obtained by hydrolyzing an azuki bean with a koji mold or a proteolytic enzyme derived from the koji mold to fragment a protein in the azuki bean.
摘要翻译：本发明的目的在于提供一种DPP-4抑制剂，其是从味道和吸收性的观点出发，通过使用食品作为原料，适用于口服摄取的DPP-4抑制剂，以及用于预防和/或改善糖尿病的组合物含有DPP-4抑制剂。本发明提供通过微生物或微生物产生的蛋白水解酶处理芸豆或芸豆而获得的DPP-4抑制剂。特别地，优选的DPP-4抑制剂可以通过用曲霉霉素或衍生自曲霉菌的蛋白水解酶水解azuki豆来分解azuki bean中的蛋白质来获得。

2. 发明申请

US20110038959A1 PLANT-ORIGIN DRUG FOR PREVENTING OR IMPROVING HYPERURICEMIA 审中-公开
标题翻译：用于预防或改善高血压的植物原药
公开(公告)号：US20110038959A1
公开(公告)日：2011-02-17
申请号：US12864069
申请日：2009-01-21
申请人： Shinichi Honda , Hozumi Tanaka , Hideyuki Kishida , Masayasu Kitagawa
发明人： Shinichi Honda , Hozumi Tanaka , Hideyuki Kishida , Masayasu Kitagawa
IPC分类号： A61K36/287 , A61P19/06
CPC分类号： A61K36/00 , A23L33/105
摘要： This invention provides an agent for preventing or ameliorating hyperuricemia comprising, as an active ingredient, an extract of at least one type of plant raw material selected from the group consisting of Artemisia, Saussurea involucrate, chrysanthemum, guava, cudweed (Gnaphalium affine), blue mallow, oregano, Glechoma hederacea, mint, Millettia reticulata, and peanuts obtained with the use of an organic solvent or aqueous organic solvent, Pycnogenol, and/or a chalcone derivative or a glycoside thereof.
摘要翻译：本发明提供了用于预防或改善高尿酸血症的药剂，其包含选自下组的至少一种植物原料的提取物作为活性成分，所述植物原料选自艾蒿，西葫芦，菊花，番石榴，草甘膦（Gnaphalium affine），蓝色麦芽，牛至，麦兜草，薄荷，银丝，以及使用有机溶剂或含水有机溶剂碧萝芷，和/或查耳酮衍生物或其糖苷获得的花生。

3. 发明授权

US09911856B2 Semiconductor device 有权
公开(公告)号：US09911856B2
公开(公告)日：2018-03-06
申请号：US12900145
申请日：2010-10-07
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
IPC分类号： H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/78606 , H01L29/78696
摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

4. 发明授权

US09627198B2 Method for manufacturing thin film semiconductor device 有权
公开(公告)号：US09627198B2
公开(公告)日：2017-04-18
申请号：US12894791
申请日：2010-09-30
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
IPC分类号： H01L21/00 , H01L21/84 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L21/02554 , G02F1/1368 , G02F1/167 , H01L21/02164 , H01L21/02172 , H01L21/02266 , H01L21/02422 , H01L21/02565 , H01L21/02631 , H01L21/477 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

5. 发明授权

US08450144B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08450144B2
公开(公告)日：2013-05-28
申请号：US12722795
申请日：2010-03-12
申请人： Junichiro Sakata , Hideyuki Kishida , Hiroki Ohara , Toshinari Sasaki , Shunpei Yamazaki
发明人： Junichiro Sakata , Hideyuki Kishida , Hiroki Ohara , Toshinari Sasaki , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , G09G3/3258 , G09G3/3275 , G09G2300/0842 , G09G2300/0861 , G09G2310/0248 , G09G2310/0297 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L27/12 , H01L27/1225 , H01L27/1288 , H01L27/3262 , H01L27/3276 , H01L29/66969 , H01L29/78618
摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.
摘要翻译：本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区电极层。源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。

6. 发明授权

US08362563B2 Thin film transistor, method for manufacturing the same, and semiconductor device 有权
公开(公告)号：US08362563B2
公开(公告)日：2013-01-29
申请号：US13558638
申请日：2012-07-26
申请人： Toshikazu Kondo , Hideyuki Kishida
发明人： Toshikazu Kondo , Hideyuki Kishida
IPC分类号： H01L27/12 , H01L29/66
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/0262 , H01L21/02631 , H01L21/477 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1259 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78663 , H01L29/78678 , H01L29/7869 , H01L29/78693
摘要： In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

7. 发明申请

US20110084272A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084272A1
公开(公告)日：2011-04-14
申请号：US12900136
申请日：2010-10-07
申请人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/22 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译：目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极。金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

8. 发明申请

US20090246186A1 AGENT FOR IMPROVING NERVOUS SYSTEM CELL FUNCTIONS 审中-公开
标题翻译：改善神经系统细胞功能的代理
公开(公告)号：US20090246186A1
公开(公告)日：2009-10-01
申请号：US12295258
申请日：2007-03-29
申请人： Yoshiyuki Shinagawa , Hideyuki Kishida , Taizo Kawabe , Hirokazu Sakamoto , Hiroshi Kubo , Kazunori Hosoe
发明人： Yoshiyuki Shinagawa , Hideyuki Kishida , Taizo Kawabe , Hirokazu Sakamoto , Hiroshi Kubo , Kazunori Hosoe
IPC分类号： A61K31/122 , A61P25/00
CPC分类号： A61K31/09 , A61K31/122
摘要： The present invention aims to activate neural cells in brain, and further provide a useful composition having an action to protect intracerebral neural cells from external and internal stresses.An agent for improving a neural cell function containing reduced coenzyme Q as an active ingredient, more specifically, an agent for activating neural cells and an agent for protecting neural cells, is useful, and can be used for the improvement or prophylaxis of central neurological diseases or neuropathy symptoms derived from or associated with a neurodegenerative disease, promotion of cognitive function or improvement of learning and memory disorders.
摘要翻译：本发明旨在激活脑中的神经细胞，并进一步提供一种有用的组合物，其具有保护脑内神经细胞免受外部和内部应激的作用。用于改善包含还原型辅酶Q作为活性成分的神经细胞功能的药剂，更具体地，用于激活神经细胞的药剂和用于保护神经细胞的药剂是有用的，并且可用于改善或预防中枢神经系统疾病或由神经退行性疾病引起或与之相关的神经病症状，促进认知功能或改善学习和记忆障碍。

9. 发明申请

US20050074860A1 Reduced coenzyme Q10 crystal with excellent stability and composition containing said reduced coenzyme Q10 crystal 有权
标题翻译：具有优异稳定性的还原型辅酶Q10晶体，含有所述还原型辅酶Q10晶体的组合物
公开(公告)号：US20050074860A1
公开(公告)日：2005-04-07
申请号：US10938431
申请日：2004-09-09
申请人： Takahiro Ueda , Shiro Kitamura , Taizo Kawabe , Hideyuki Kishida , Yasuyoshi Ueda
发明人： Takahiro Ueda , Shiro Kitamura , Taizo Kawabe , Hideyuki Kishida , Yasuyoshi Ueda
IPC分类号： A23L1/30 , C07C43/23 , C07C43/20 , C12N9/00 , C12Q1/48
CPC分类号： C07C43/23 , A23L33/10
摘要： The present invention provides a reduced coenzyme Q10 crystal with excellent stability and a composition containing said reduced coenzyme Q10 crystals. According to the present invention, after dissolving reduced coenzyme Q10 in a fat and oil, it is cooled, making it possible to obtain reduced coenzyme Q10 crystals with excellent stability and which exhibit an x-ray diffraction pattern (using a CuKα emission line) that differs from ordinary reduced coenzyme Q10 crystals. Moreover, said crystals are also excellent in bioabsorbability.
摘要翻译：本发明提供具有优异稳定性的还原型辅酶Q10晶体和含有所述还原型辅酶Q10晶体的组合物。根据本发明，在将脂肪和油中的还原型辅酶Q10溶解后，将其冷却，可以获得稳定性优异的还原型辅酶Q10晶体，并显示出X射线衍射图（使用CuKα发射线）与普通还原型辅酶Q10晶体不同。此外，所述晶体的生物吸收性也优异。

10. 发明授权

US5270339A Phenoxybenzene derivative 失效
标题翻译：苯氧基苯衍生物
公开(公告)号：US5270339A
公开(公告)日：1993-12-14
申请号：US938164
申请日：1992-12-03
申请人： Kozo Yamamoto , Yoshihide Fuse , Hideyuki Kishida , Naoko Yasuhara , Toshiaki Miwa , Ikuo Katsumi , Takayoshi Hidaka
发明人： Kozo Yamamoto , Yoshihide Fuse , Hideyuki Kishida , Naoko Yasuhara , Toshiaki Miwa , Ikuo Katsumi , Takayoshi Hidaka
IPC分类号： C07D207/08 , C07D207/20 , C07D207/24 , C07D207/26 , C07D207/36 , C07D405/12 , C07D207/06
CPC分类号： C07D207/26 , C07D207/08 , C07D207/20 , C07D207/24 , C07D207/36 , C07D405/12
摘要： There are described a phenoxybenzene derivative having the formula (I): ##STR1## wherein R.sup.1 is hydrogen atom; an alkyl group having 1 to 3 carbon atoms; --OR.sup.6 or a halogen atom,R.sup.2 is hydrogen atom, nitro group or amino group,R.sup.3 is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 5 carbon atoms, allyl group, vinyl group or --(CH.sub.2)n.sup.1 R.sup.7R.sup.4 is hydrogen atom, an alkyl group having 1 to 3 carbon atoms or --(CH.sub.2)n.sup.3 R.sup.25R.sup.5 hydrogen atom; an alkyl group having 1 to 3 carbon atoms; or phenyl group,X is ##STR2## wherein Y is oxygen atom or sulfur atom; or --CHR.sup.27 -- and line means a single bond or a double bond provided that n is 2 in case that the line means a single bond and n is 1 in case that the line means a double bond, ora pharmacologically acceptable salt thereof,a cognition enhancer comprising the same as an effective ingredient andan antidepressant comprising the same as an effective ingredient.
摘要翻译： PCT No.PCT / JP92 / 00410 Sec。 371日期1992年12月3日 102（e）日期1992年12月3日PCT提交1992年4月2日PCT公布。 WO92 / 17447 PCT出版物描述了具有式（I）的苯氧基苯衍生物：其中R 1是氢原子;（I）其中R 1是氢原子; 具有1至3个碳原子的烷基; -OR 6或卤原子，R 2为氢原子，硝基或氨基，R 3为氢原子，碳原子数1〜8的烷基，碳原子数3〜5的环烷基，烯丙基，乙烯基或 - （CH2）n1R7 R4为氢原子，碳原子数1〜3的烷基或 - （CH2）n3R25 R5氢原子; 具有1至3个碳原子的烷基; 或苯基，X是其中Y是氧原子或硫原子; 或-CHR27-，并且线表示单键或双键，条件是在线表示单键的情况下n为2，并且在该线表示双键的情况下n为1，或其药理学上可接受的盐，包含与有效成分相同的认知增强剂和包含其作为有效成分的抗抑郁药。

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