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1. 发明申请

US20100035437A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20100035437A1
公开(公告)日：2010-02-11
申请号：US12510572
申请日：2009-07-28
申请人： Hirohisa YAMAZAKI , Satoshi Okada , Tsutomu Kato
发明人： Hirohisa YAMAZAKI , Satoshi Okada , Tsutomu Kato
IPC分类号： H01L21/465
CPC分类号： F16L25/00 , C23C16/405 , C23C16/4405 , C23C16/4408 , C23C16/45527 , C23C16/45546 , H01L21/02271
摘要： Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus includes a substrate holder holding horizontally oriented and stacked substrates, an inner tube accommodating the substrate holder, an outer tube enclosing the inner tube, a gas nozzle installed in the inner tube, a gas injection hole formed in the gas nozzle, a source gas supply unit supplying source gas to an inside of the inner tube through the gas nozzle, a gas exhaust outlet formed in a sidewall of the inner tube, an exhaust unit exhausting a gap between the outer tube and the inner tube to create a gas stream inside the inner tube from the gas injection hole to the gas exhaust outlet, and a gas penetration preventing cylinder enclosing a region of the substrate holder lower than a region of the substrate holder where the substrates are stacked.
摘要翻译：晶片表面和晶片之间的基板加工均匀性得到改善。基板处理装置包括保持水平取向和堆叠的基板的基板保持器，容纳基板保持件的内管，封装内管的外管，安装在内管中的气体喷嘴，形成在气体喷嘴中的气体注入孔，源气体供给单元，其通过气体喷嘴向内管的内部供给源气体，形成在内管的侧壁中的排气口，排出外管和内管之间的间隙的排气单元，从气体喷射孔到气体排出口的内管内的气流，以及包围基板保持器的区域的气体穿透防止气缸低于基板保持器的堆叠基板的区域。

2. 发明授权

US08741063B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08741063B2
公开(公告)日：2014-06-03
申请号：US12510572
申请日：2009-07-28
申请人： Hirohisa Yamazaki , Satoshi Okada , Tsutomu Kato
发明人： Hirohisa Yamazaki , Satoshi Okada , Tsutomu Kato
IPC分类号： C23C16/458
CPC分类号： F16L25/00 , C23C16/405 , C23C16/4405 , C23C16/4408 , C23C16/45527 , C23C16/45546 , H01L21/02271
摘要： Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus including: a substrate holder including a substrate stacking part configured to hold a plurality of vertically stacked substrates and a cylinder part disposed under the substrate stacking part to enclose a lower portion of the substrate holder; an inner tube configured to accommodate the substrate holder wherein a space between the cylinder part and a lower portion of the inner tube is smaller than a space between the substrate stacking part and an upper portion of the inner tube; an outer tube configured to enclose the inner tube with a gap therebetween; a gas nozzle installed in the inner tube; a gas injection hole disposed in the gas nozzle; a source gas supply unit configured to supply a source gas to an inside of the inner tube through the gas nozzle; a gas exhaust outlet disposed in a sidewall of the inner tube such that the inside of the inner tube communicates with the gap through the plurality of gas exhaust outlets; an exhaust unit configured to exhaust the gap so as to create a gas stream inside the inner tube in a direction from the gas injection hole to the plurality of gas exhaust outlets.
摘要翻译：晶片表面和晶片之间的基板加工均匀性得到改善。一种基板处理装置，包括：基板保持器，其包括被配置为保持多个垂直堆叠的基板的基板堆叠部分和设置在所述基板堆叠部分下方以包围所述基板保持器的下部的圆筒部分; 内管，其构造成容纳所述基板保持器，其中所述筒部与所述内管的下部之间的间隔小于所述基板堆叠部与所述内管的上部之间的间隔; 外管，其构造成围绕内管间隙; 安装在内管中的气体喷嘴; 设置在所述气体喷嘴中的气体注入孔; 源气体供给单元，其构造成通过所述气体喷嘴将源气体供给到所述内管的内部; 排气出口，其设置在所述内管的侧壁中，使得所述内管的内部通过所述多个排气出口与所述间隙连通; 排气单元，其构造成排出所述间隙，以在从所述气体注入孔到所述多个排气出口的方向上在所述内管内产生气流。

3. 发明申请

US20120079985A1 METHOD FOR PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于处理基板和基板处理装置的方法
公开(公告)号：US20120079985A1
公开(公告)日：2012-04-05
申请号：US13313736
申请日：2011-12-07
申请人： Hirohisa YAMAZAKI , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
发明人： Hirohisa YAMAZAKI , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
IPC分类号： C23C16/455
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4412 , C23C16/45527 , C23C16/45557 , H01L21/02112 , H01L21/02205
摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
摘要翻译：提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

4. 发明申请

US20100009079A1 Method for processing substrate and substrate processing apparatus 审中-公开
标题翻译：基板和基板处理装置的处理方法
公开(公告)号：US20100009079A1
公开(公告)日：2010-01-14
申请号：US12457779
申请日：2009-06-22
申请人： Hirohisa Yamazaki , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
发明人： Hirohisa Yamazaki , Yuji Takebayashi , Masanori Sakai , Tsutomu Kato
IPC分类号： C23C16/455 , C23C16/40
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4412 , C23C16/45527 , C23C16/45557 , H01L21/02112 , H01L21/02205
摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
摘要翻译：提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

5. 发明申请

US20090197424A1 Substrate processing apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090197424A1
公开(公告)日：2009-08-06
申请号：US12320577
申请日：2009-01-29
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： H01L21/30 , C23C16/54
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.
摘要翻译：根据本发明的基板处理装置促进向相邻基板之间的空间供应气体，而不减少可以共同处理的基板的数量。基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

6. 发明授权

US08461062B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08461062B2
公开(公告)日：2013-06-11
申请号：US13331258
申请日：2011-12-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.
摘要翻译：基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

7. 发明申请

US20090223448A1 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090223448A1
公开(公告)日：2009-09-10
申请号：US12379420
申请日：2009-02-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： B05C9/06
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.
摘要翻译：本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，该处理气体供应喷嘴沿着基板的堆叠方向沿着处理室的内壁延伸并且供应处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

8. 发明授权

US08828141B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08828141B2
公开(公告)日：2014-09-09
申请号：US12379420
申请日：2009-02-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/40 , C23C16/44 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.
摘要翻译：本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，所述处理气体供应喷嘴沿着基板的堆叠方向沿处理室的内壁延伸并且供应处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

9. 外观设计

USD655255S1 Boat of wafer processing apparatus 有权
标题翻译：晶圆加工设备船
公开(公告)号：USD655255S1
公开(公告)日：2012-03-06
申请号：US29378016
申请日：2010-10-28
申请人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada
设计人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada

10. 发明申请

US20100087069A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20100087069A1
公开(公告)日：2010-04-08
申请号：US12571688
申请日：2009-10-01
申请人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
发明人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
IPC分类号： H01L21/316 , C23C16/46 , C23C16/513
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.
摘要翻译：可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。提供了制造半导体器件的方法。该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

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