专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5786570A Heating roller device 失效
标题翻译：加热辊装置
公开(公告)号：US5786570A
公开(公告)日：1998-07-28
申请号：US785220
申请日：1997-01-17
申请人： Yukio Miya , Osamu Sugiyama , Ryota Koike , Takashi Toida , Yuji Fukazawa
发明人： Yukio Miya , Osamu Sugiyama , Ryota Koike , Takashi Toida , Yuji Fukazawa
IPC分类号： G03G15/20 , H05B3/00
CPC分类号： H05B3/0095 , G03G15/2057
摘要： A heating roller device including a center shaft, a heat roller rotatably supported on the center shaft, and heating means provided inside the heat roller has the wear resistance of the outer surface of its heat roller outer surface increased and its availability factor enhanced by forming the outer surface of the heat roller with a hard carbon film of hydrogenated amorphous carbon. The hard carbon film is preferably formed on an intermediate layer formed on the outer surface of the heat roller beforehand so and to increase its adhesion to the outer surface. Wear resistance can be further enhanced by forming the outer surface of the heat roller with a hard layer, forming an intermediate layer on the hard layer and forming the hard carbon film on the intermediate layer.
摘要翻译：一种加热辊装置，包括中心轴，可旋转地支撑在中心轴上的加热辊和设置在加热辊内部的加热装置，其加热辊外表面的外表面的耐磨性增加，并且通过形成加热辊的外表面具有氢化无定形碳的硬碳膜。硬碳膜优选预先形成在形成在加热辊的外表面上的中间层上，并且增加其与外表面的粘合力。通过用硬层形成加热辊的外表面可以进一步提高耐磨性，在硬质层上形成中间层，并在中间层上形成硬碳膜。

2. 发明授权

US5868855A Surface processing method and surface processing device for silicon substrates 失效
标题翻译：硅衬底的表面处理方法和表面处理装置
公开(公告)号：US5868855A
公开(公告)日：1999-02-09
申请号：US612413
申请日：1996-03-07
申请人： Yuji Fukazawa , Kunihiro Miyazaki
发明人： Yuji Fukazawa , Kunihiro Miyazaki
IPC分类号： B08B3/08 , C09K13/08 , C23F1/08 , C23F1/24 , C23G1/12 , C23G3/00 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/302 , B08B6/00
CPC分类号： H01L21/02052
摘要： A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.
摘要翻译：将硅晶片设置在处理槽中，并且HF水溶液和臭氧水分别通过HF阀和臭氧水阀从HF管线和臭氧水管线供应到处理槽中以产生混合物。该混合物含有浓度为0.01％至1％的HF水溶液和浓度为0.1ppm至20ppm的臭氧水，对于硅和氧化硅膜具有基本上相同的蚀刻速率，并且在 10℃〜30℃的范围。可以通过使用上述混合物同时清洗形成在晶片表面的一部分上的硅晶片和氧化硅膜。

3. 发明授权

US5571367A Apparatus for subjecting a semiconductor substrate to a washing process 失效
标题翻译：用于对半导体衬底进行洗涤过程的设备
公开(公告)号：US5571367A
公开(公告)日：1996-11-05
申请号：US401686
申请日：1995-03-10
申请人： Takahito Nakajima , Yuji Fukazawa
发明人： Takahito Nakajima , Yuji Fukazawa
IPC分类号： B08B3/10 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67057
摘要： An apparatus for subjecting a semiconductor substrate to a washing process is equipped with a hermetically closable chamber for a substrate washing process and a washing process bath provided in the chamber to subject the substrate to the washing process. The semiconductor substrate is held in a horizontal state by a substrate support mechanism provided in the substrate washing process bath. A liquid supply mechanism is provided for supplying a liquid at least enough great to allow the semiconductor substrate to be immersed with the liquid. A chemicals liquid vapor and gas for substrate washing are supplied, by a chemicals component supply mechanism, into the chamber for a predetermined time period so that the chemicals liquid vapor and gas are dissolved into the liquid in the process bath to give a solution. The solution thus obtained is replaced by a pure water replacing mechanism with a specific liquid.
摘要翻译：用于对半导体衬底进行洗涤处理的设备装备有用于衬底洗涤过程的气密封闭室和设置在室中的洗涤工艺槽以使衬底经受洗涤过程。半导体衬底由设置在衬底清洗处理槽中的衬底支撑机构保持在水平状态。提供一种液体供应机构，用于供应至少足够大的液体以允许半导体衬底浸入液体中。用于衬底洗涤的化学液体蒸气和气体通过化学物质供应机构供入到室中预定的时间段，使得化学品液体蒸气和气体溶解在处理浴中的液体中以得到溶液。由此获得的溶液由具有特定液体的纯水替代机构代替。

4. 发明授权

US5511587A Wear-resistant reed for a high-speed loom 失效
标题翻译：用于高速织机的耐磨簧片
公开(公告)号：US5511587A
公开(公告)日：1996-04-30
申请号：US426462
申请日：1995-04-19
申请人： Yukio Miya , Shigeru Kizaki , Osamu Sugiyama , Akiteru Hatayama , Yoshitsugu Shibuya , Mitsugu Enomoto , Koichi Naoi , Yuji Fukazawa , Takanori Nanya , Shotaro Shimizu , Hiroshi Tagawa
发明人： Yukio Miya , Shigeru Kizaki , Osamu Sugiyama , Akiteru Hatayama , Yoshitsugu Shibuya , Mitsugu Enomoto , Koichi Naoi , Yuji Fukazawa , Takanori Nanya , Shotaro Shimizu , Hiroshi Tagawa
IPC分类号： D03D49/62
CPC分类号： D03D49/62 , D03D47/278 , Y10T428/24975
摘要： A diamond-like carbon (DLC) film is formed on a portion of a reed blade in a high-speed loom which requires the highest wear resistance. When a stainless steel is used as the base material of the reed blade, the DLC film is formed through an intermediate layer comprising, e.g., a titanium carbide layer. Reed blades coated with a DLC film are arranged at the side portions of the reed where wear progresses quickly, while reed blades coated with hard films requiring a relatively low cost, or non-coated reed blades, are arranged in the central portion of the reed, thereby uniforming the blade wear throughout the entire reed. The reed is suitable to many types of fibers, ranging from natural to synthetic and new material fibers.
摘要翻译：在需要最高耐磨性的高速织机中的筘片的一部分上形成类金刚石碳（DLC）膜。当使用不锈钢作为筘片的基材时，DLC膜通过包括例如碳化钛层的中间层形成。涂有DLC膜的筘片布置在筘的侧面部分，其中磨损进行得很快，而涂覆有需要相对低成本的硬膜的筘片或未涂覆的筘片布置在筘的中心部分从而使整个芦苇中的刀片磨损均匀化。芦苇适用于许多类型的纤维，从天然纤维到合成纤维和新材料纤维。

5. 发明授权

US06693028B2 Semiconductor device having multilayer wiring structure and method for manufacturing the same 失效
公开(公告)号：US06693028B2
公开(公告)日：2004-02-17
申请号：US09882435
申请日：2001-06-15
申请人： Yuji Fukazawa
发明人： Yuji Fukazawa
IPC分类号： H01L214763
CPC分类号： H01L23/5226 , H01L21/76883 , H01L21/76885 , H01L21/76897 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes a step of forming a first groove in a first insulating film, forming a conductive film in the first groove, a step of selectively forming a second insulating film on the conductive film and the first insulating film, a step of forming a second groove by removing part of the conductive film using the second insulating film as a mask, the second groove being formed so as to form a connecting portion of the conductive film under the second insulating film and form a first wiring layer by forming the connecting portion with a bottom of the first groove integrally with each other as one unit.

6. 发明授权

US5810940A Method for cleaning semiconductor wafers 失效
标题翻译：清洗半导体晶圆的方法
公开(公告)号：US5810940A
公开(公告)日：1998-09-22
申请号：US710400
申请日：1996-09-17
申请人： Yuji Fukazawa , Takahito Nakajima , Kazuhiko Takase
发明人： Yuji Fukazawa , Takahito Nakajima , Kazuhiko Takase
IPC分类号： H01L21/304 , H01L21/306 , C03C23/00
CPC分类号： H01L21/02052 , Y10S134/902
摘要： For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.
摘要翻译：为了清洁半导体晶片而不将其暴露于大气中，在将半导体晶片放置在通过第一控制阀填充有去离子水的清洁容器中之后，第一清洁流体通过第二控制阀供应到清洁容器，因此去离子水溢出。然后通过第三控制阀将第二清洁流体供应到容器，使得第一清洗流体溢出以产生包含第一清洗流体的混合流体，从而清洁其中的半导体晶片。

7. 发明授权

US5470393A Semiconductor wafer treating method 失效
标题翻译：半导体晶片处理方法
公开(公告)号：US5470393A
公开(公告)日：1995-11-28
申请号：US271960
申请日：1994-07-08
申请人： Yuji Fukazawa
发明人： Yuji Fukazawa
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/308 , B08B3/08 , B08B7/04
CPC分类号： H01L21/02052 , H01L21/67057
摘要： A surface of a semiconductor water is washed with HF water solution, thereby removing an oxide film formed on a surface of the semiconductor water. Next, the surface of the semiconductor water is treated with mixed liquid of HF, HCl, H.sub.2 O.sub.2, and deionized water. Then, the surface of the semiconductor wafer is treated with mixed liquid of HCl, H.sub.2 O.sub.2, and deionized water, thereby removing the surface of the semiconductor wafer to remove metallic impurity such as Cu adhered onto the surface of the semiconductor wafer.
摘要翻译：用HF水溶液洗涤半导体水的表面，从而除去形成在半导体水表面上的氧化膜。接下来，用HF，HCl，H 2 O 2和去离子水的混合液处理半导体水的表面。然后，用HCl，H 2 O 2和去离子水的混合液处理半导体晶片的表面，从而去除半导体晶片的表面，以去除附着在半导体晶片表面上的金属杂质如Cu。

8. 发明授权

US5442236A Semiconductor device having a multilayered wiring structure with dummy wiring 失效
标题翻译：具有具有虚拟布线的多层布线结构的半导体器件
公开(公告)号：US5442236A
公开(公告)日：1995-08-15
申请号：US372857
申请日：1995-01-13
申请人： Yuji Fukazawa
发明人： Yuji Fukazawa
IPC分类号： H01L21/285 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/528 , H01L23/48 , H01L29/46 , H01L29/54 , H01L29/62
CPC分类号： H01L23/5226 , H01L23/5283 , H01L2924/0002
摘要： The present invention is characterized in that a dummy wiring is provided between wirings constituting a multi-layered wiring, when an electric connection is prepared between wirings disposed in the vertical direction. The dummy wiring is exposed to the contact hole of the insulating film which is filled by the connection wiring. Therefore, the dummy and multi-layered wiring serve as growth seeds in the contact hole, and tungsten beings selective growth from the growth seeds, as the connection wiring. Secure electric connection is finally provided between the wirings.
摘要翻译：本发明的特征在于，当在垂直方向上布置的布线之间形成电连接时，在构成多层布线的布线之间提供虚拟布线。虚拟布线暴露于由连接布线填充的绝缘膜的接触孔。因此，虚拟和多层布线用作接触孔中的生长种子，并且钨生长从生长种子中选择性生长，作为连接布线。在布线之间最后提供安全的电连接。

9. 发明授权

US07208831B2 Semiconductor device having multilayer wiring structure and method, wherein connecting portion and wiring layer are formed of same layer 失效
标题翻译：具有多层布线结构和方法的半导体器件，其中连接部分和布线层由相同的层形成
公开(公告)号：US07208831B2
公开(公告)日：2007-04-24
申请号：US10755003
申请日：2004-01-08
申请人： Yuji Fukazawa
发明人： Yuji Fukazawa
IPC分类号： H01L23/48 , H01L21/02 , H01L21/4763
CPC分类号： H01L23/5226 , H01L21/76883 , H01L21/76885 , H01L21/76897 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes a step of forming a first groove in a first insulating film, forming a conductive film in the first groove, a step of selectively forming a second insulating film on the conductive film and the first insulating film, a step of forming a second groove by removing part of the conductive film using the second insulating film as a mask, the second groove being formed so as to form a connecting portion of the conductive film under the second insulating film and form a first wiring layer by forming the connecting portion with a bottom of the first groove integrally with each other as one unit.
摘要翻译：一种制造半导体器件的方法包括在第一绝缘膜中形成第一槽，在第一槽中形成导电膜的步骤，在导电膜和第一绝缘膜上选择性地形成第二绝缘膜的步骤，通过使用第二绝缘膜作为掩模去除导电膜的一部分来形成第二槽的步骤，第二槽形成为在第二绝缘膜下形成导电膜的连接部分，并形成第一布线层，由将所述连接部分与所述第一槽的底部一体地形成为一个单元。

10. 发明授权

US06759314B1 Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films 有权
标题翻译：使用氮化硅膜作为栅极绝缘膜的半导体器件的制造方法
公开(公告)号：US06759314B1
公开(公告)日：2004-07-06
申请号：US09670520
申请日：2000-09-26
申请人： Wakako Moriyama , Naoki Kai , Hiroaki Hazama , Keiki Nagai , Yuji Fukazawa , Kazuo Saki , Yoshio Ozawa , Yasumasa Suizu
发明人： Wakako Moriyama , Naoki Kai , Hiroaki Hazama , Keiki Nagai , Yuji Fukazawa , Kazuo Saki , Yoshio Ozawa , Yasumasa Suizu
IPC分类号： H01L21425
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/28273 , H01L21/31662 , H01L27/115 , H01L27/11521 , H01L29/511 , H01L29/518
摘要： A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.
摘要翻译：在硅衬底上形成作为栅极绝缘膜的热氮化膜，在绝缘膜上形成栅极电极材料之后，形成栅电极。在处理电极之后，除去位于栅电极下方的栅极绝缘膜的除了其一部分之外的部分。此外，通过使用热氧化法在堆叠的栅极结构的侧壁和上表面以及硅衬底的暴露的主表面上形成绝缘膜（后氧化膜）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式