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1. 发明授权

US07109103B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07109103B2
公开(公告)日：2006-09-19
申请号：US10872509
申请日：2004-06-22
申请人： Yuichiro Mitani , Hideki Satake
发明人： Yuichiro Mitani , Hideki Satake
IPC分类号： H01L21/20
CPC分类号： H01L21/28185 , H01L21/28176 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L29/518
摘要： A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×1017 cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.
摘要翻译：一种半导体器件，包括硅衬底，形成在硅衬底上的包括硅，氘和至少一个氧和氮的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极，其中氘浓度在栅极绝缘体膜与栅电极的界面为至少1×10 17 cm -3，并且在栅极绝缘体膜的界面附近的氘浓度与硅基板比栅电极的栅极绝缘膜的界面附近的氘浓度高。

2. 发明授权

US06891238B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06891238B2
公开(公告)日：2005-05-10
申请号：US10109893
申请日：2002-04-01
申请人： Yuichiro Mitani , Hideki Satake
发明人： Yuichiro Mitani , Hideki Satake
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/30 , H01L21/318 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94 , H01L31/113 , H01L31/119 , H01L31/62
CPC分类号： H01L21/28185 , H01L21/28176 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L29/518
摘要： A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×107 cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.
摘要翻译：一种半导体器件，包括硅衬底，形成在硅衬底上的包括硅，氘和至少一个氧和氮的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极，其中氘浓度在栅极绝缘体膜与栅电极的界面为至少1×10 -7 cm -3，并且在栅极绝缘体膜的界面附近的氘浓度与硅基板比栅电极的栅极绝缘膜的界面附近的氘浓度高。

3. 发明授权

US06191463B1 Apparatus and method of improving an insulating film on a semiconductor device 失效
标题翻译：改善半导体器件上的绝缘膜的装置和方法
公开(公告)号：US06191463B1
公开(公告)日：2001-02-20
申请号：US09115233
申请日：1998-07-14
申请人： Yuichiro Mitani , Hideki Satake , Akira Toriumi
发明人： Yuichiro Mitani , Hideki Satake , Akira Toriumi
IPC分类号： H01L2978
CPC分类号： H01L21/28176 , H01L21/2254 , H01L21/2257 , H01L21/28211 , H01L21/823814 , H01L21/823857 , H01L29/4908 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/66772 , H01L29/78603 , H01L29/78609 , H01L29/94
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film. The first insulating film contains a halogen element and a combination of silicon and nitrogen or a combination of silicon, oxygen, and nitrogen. The maximum concentration of the halogen element in the first insulating film ranges from 1020 atoms/cm3 to 1021 atoms/cm3 inclusive. With this structure, the dielectric breakdown strength and the like of the insulating film increase, and the reliability of the insulating film improves.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜和形成在第一绝缘膜上的电极。第一绝缘膜含有卤素元素和硅与氮的组合或硅，氧和氮的组合。第一绝缘膜中的卤素元素的最大浓度为1020原子/ cm 3至1021原子/ cm 3。利用这种结构，绝缘膜的绝缘击穿强度等增加，并且绝缘膜的可靠性提高。

4. 发明授权

US07268411B2 Insulating film and electronic device 失效
标题翻译：绝缘膜和电子设备
公开(公告)号：US07268411B2
公开(公告)日：2007-09-11
申请号：US11347319
申请日：2006-02-06
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/00
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A capacitor includes a first electrode, an insulating film and a second electrode. The insulating film includes n layers of barrier layers each consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity, and (n−1) layers of well layers each consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity. The barrier layers and the well layers are stacked by turns. Discrete energy levels are formed in each of the well layers by a quantum effect. Thicknesses of the n layers of the barrier layers are not smaller than 2.5 angstroms. A thickness dm (angstrom) and a relative permittivity εm of an m-th barrier layer satisfying the condition: 2.5 >(d1/ε1+d2/ε2+. . . +dn/εn).
摘要翻译：电容器包括第一电极，绝缘膜和第二电极。绝缘膜包括n层阻挡层，每层由具有比第一带隙大的带隙并且具有小于第一相对介电常数的相对介电常数的材料构成，以及（n-1）层的各层由具有比第一带隙小的带隙，并且具有大于第一相对介电常数的相对介电常数。阻挡层和阱层被匝堆叠。通过量子效应在每个阱层中形成离散能级。阻挡层的n层的厚度不小于2.5埃。满足以下条件的第m个阻挡层的厚度dm（埃）和相对介电常数εε（d 1 /ε1 + d 2 /ε2 + ... + d n / epsilon）。

5. 发明授权

US07208802B2 Insulating film and electronic device 失效
标题翻译：绝缘膜和电子设备
公开(公告)号：US07208802B2
公开(公告)日：2007-04-24
申请号：US11347318
申请日：2006-02-06
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An insulating film includes a first barrier layer, a well layer provided on the first barrier layer, a second barrier layer provided on the well layer. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. The second barrier layer consists of a material having a third bandgap larger than the second bandgap and having a third relative perminivity smaller than second relative permittivity. Each of the first and second barrier layers has a thickness not smaller than 2.5 angstroms, and 2.5>(d1/ε1+d2/ε2) is satisfied where d1 and d2 (angstrom) are the thicknesses of the first and second barrier layers, respectively, ε1 is the first relative permittivity, and ε2 is the third permittivity.
摘要翻译：绝缘膜包括第一阻挡层，设置在第一阻挡层上的阱层，设置在阱层上的第二势垒层。第一阻挡层由具有第一带隙和第一相对介电常数的材料组成。阱层由具有比第一带隙小的第二带隙并且具有大于第一相对介电常数的第二相对介电常数的材料组成。第二阻挡层由具有比第二带隙大的第三带隙并且具有小于第二相对介电常数的第三相对发射率的材料组成。第一阻挡层和第二阻挡层中的每一个具有不小于2.5埃的厚度，并且其中d 1和d 2（埃）是第一和第二阻挡层的厚度，满足2.5>（d 1 /ε1 + d 2 /ε2）阻挡层分别为ε1为第一相对介电常数，ε2为第三介电常数。

6. 发明申请

US20050215035A1 Field effect transistor with metal oxide gate insulator and sidewall insulating film 审中-公开
标题翻译：具有金属氧化物栅极绝缘体和侧壁绝缘膜的场效应晶体管
公开(公告)号：US20050215035A1
公开(公告)日：2005-09-29
申请号：US11136492
申请日：2005-05-25
申请人： Takeshi Yamaguchi , Hideki Satake , Noburu Fukushima
发明人： Takeshi Yamaguchi , Hideki Satake , Noburu Fukushima
IPC分类号： H01L29/78 , H01L21/268 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L21/04 , H01L21/84
CPC分类号： H01L29/517 , H01L21/268 , H01L21/28194 , H01L21/28202 , H01L21/3143 , H01L21/31604 , H01L21/31612 , H01L29/495 , H01L29/4966 , H01L29/51 , H01L29/66477 , H01L29/6656
摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.
摘要翻译：提供了一种半导体器件，其包括硅衬底，设置在硅衬底上并包含金属氧化物的栅极绝缘体，设置在栅极绝缘体上的栅极电极和设置在栅极绝缘体和栅电极的侧面上的侧壁绝缘膜并含有铝，硅，氧和氮。

7. 发明授权

US06914312B2 Field effect transistor having a MIS structure and method of fabricating the same 有权
标题翻译：具有MIS结构的场效应晶体管及其制造方法
公开(公告)号：US06914312B2
公开(公告)日：2005-07-05
申请号：US10396416
申请日：2003-03-26
申请人： Yukie Nishikawa , Noburu Fukushima , Takeshi Yamaguchi , Hideki Satake
发明人： Yukie Nishikawa , Noburu Fukushima , Takeshi Yamaguchi , Hideki Satake
IPC分类号： H01L21/318 , H01L21/28 , H01L21/8247 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A MIS type field effect transistor including gate dielectrics having a rare-earth metal oxynitride layer with a high dielectric constant, which can maintain good interface characteristics, can be provided. A field effect transistor according to one aspect of this invention includes a gate dielectric having a substantially crystalline rare-earth metal oxynitride layer containing one or more metals selected from rare-earth metals, oxygen, and nitrogen. The rare-earth metal oxynitride layer contacts a predetermined region of a Si semiconductor substrate, and the nitrogen exists at the interface between the rare-earth metal oxynitride layer and the Si semiconductor substrate, and in the bulk of the rare-earth metal oxynitride. The transistor further includes a gate electrode formed on the gate dielectrics and source and drain regions, one being formed at one side of the gate electrode and the other being formed at the other side of the gate electrode in the Si semiconductor substrate.
摘要翻译：可以提供包括能够保持良好的界面特性的具有高介电常数的稀土金属氧氮化物层的栅极电介质的MIS型场效应晶体管。根据本发明的一个方面的场效应晶体管包括具有基本上结晶的稀土金属氧氮化物层的栅极电介质，所述稀土金属氧氮化物层含有选自稀土金属，氧和氮的一种或多种金属。稀土金属氮氧化物层与Si半导体衬底的预定区域接触，并且氮存在于稀土金属氧氮化物层和Si半导体衬底之间的界面处，并且在大部分稀土金属氧氮化物中。晶体管还包括形成在栅极电介质和源极和漏极区上的栅极，一个形成在栅电极的一侧，另一个形成在Si半导体衬底中的栅电极的另一侧。

8. 发明授权

US07635900B2 Insulating film and electronic device 有权
标题翻译：绝缘膜和电子设备
公开(公告)号：US07635900B2
公开(公告)日：2009-12-22
申请号：US12135919
申请日：2008-06-09
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
摘要翻译：一种电子器件，包括以硅为主要成分的半导体层; 以及直接在半导体层的主表面上外延生长的电介质膜，其中介电膜由具有Ruddlesden-Popper型结构的介电材料组成，Ruddlesden-Popper型结构由化学式An + 1BnO3n + 1表示包含选自Ba，Sr，Ca和Mg中的至少一种的元素A，元素A中的Mg含量的百分比不大于10％，并且元素B包括选自基团由Ti，Zr和Hf组成。

9. 发明申请

US20060237837A1 Field effect transistor and method of manufacturing the same 有权
公开(公告)号：US20060237837A1
公开(公告)日：2006-10-26
申请号：US11472329
申请日：2006-06-22
申请人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
发明人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
IPC分类号： H01L23/14
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/7842 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

10. 发明申请

US20060131674A1 Insulating film and electronic device 失效
标题翻译：绝缘膜和电子设备
公开(公告)号：US20060131674A1
公开(公告)日：2006-06-22
申请号：US11347319
申请日：2006-02-06
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/94 , H01L29/76
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An insulating film comprising: a first barrier layer; a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first barrier layer, and consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. Discrete energy levels are formed in the well layer by a quantum effect. The second barrier layer is provided on the well layer, and consists of a material having a third bandgap larger than the second bandgap and having a third relative permittivity smaller than second relative permittivity. Alternatively, an insulating film comprising: n (n being an integer larger than 2) layers of barrier layer consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity; and (n−1) layers of well layers consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity, discrete energy levels being formed in the well layer by a quantum effect, each of the barrier layers and each of the well layers being stacked by turns, and discrete energy levels being formed in each of the well layers by a quantum effect, is provided. Alternatively, an insulating film having a lattice mismatch within a range of plus-or-minus 1.5% to the substrate, and further having a high barrier and a large permittivity is provided.
摘要翻译：一种绝缘膜，包括：第一阻挡层; 提供井层; 并提出了第二阻挡层。第一阻挡层由具有第一带隙和第一相对介电常数的材料组成。阱层设置在第一阻挡层上，并且由具有小于第一带隙的第二带隙的材料构成，并且具有大于第一相对介电常数的第二相对介电常数。通过量子效应在阱层中形成离散能级。第二阻挡层设置在阱层上，由具有比第二带隙大的第三带隙的材料构成，具有小于第二相对介电常数的第三相对介电常数。或者，一种绝缘膜，包括：由具有比第一带隙大的带隙并且具有小于第一相对介电常数的相对介电常数的材料构成的阻挡层的n（n是大于2的整数）层; 和（n-1）层，由具有小于第一带隙的带隙并且具有大于第一相对介电常数的相对介电常数的材料构成的阱层，通过量子效应在阱层中形成离散能级，提供阻挡层和每个阱层的匝数，并且通过量子效应在每个阱层中形成离散的能级。或者，提供了具有与衬底正或负1.5％的晶格失配并且还具有高屏障和大介电常数的绝缘膜。

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