专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07109103B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07109103B2
公开(公告)日：2006-09-19
申请号：US10872509
申请日：2004-06-22
申请人： Yuichiro Mitani , Hideki Satake
发明人： Yuichiro Mitani , Hideki Satake
IPC分类号： H01L21/20
CPC分类号： H01L21/28185 , H01L21/28176 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L29/518
摘要： A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×1017 cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.
摘要翻译：一种半导体器件，包括硅衬底，形成在硅衬底上的包括硅，氘和至少一个氧和氮的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极，其中氘浓度在栅极绝缘体膜与栅电极的界面为至少1×10 17 cm -3，并且在栅极绝缘体膜的界面附近的氘浓度与硅基板比栅电极的栅极绝缘膜的界面附近的氘浓度高。

2. 发明授权

US06891238B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06891238B2
公开(公告)日：2005-05-10
申请号：US10109893
申请日：2002-04-01
申请人： Yuichiro Mitani , Hideki Satake
发明人： Yuichiro Mitani , Hideki Satake
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/30 , H01L21/318 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94 , H01L31/113 , H01L31/119 , H01L31/62
CPC分类号： H01L21/28185 , H01L21/28176 , H01L21/28202 , H01L21/28211 , H01L21/3003 , H01L29/518
摘要： A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×107 cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.
摘要翻译：一种半导体器件，包括硅衬底，形成在硅衬底上的包括硅，氘和至少一个氧和氮的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极，其中氘浓度在栅极绝缘体膜与栅电极的界面为至少1×10 -7 cm -3，并且在栅极绝缘体膜的界面附近的氘浓度与硅基板比栅电极的栅极绝缘膜的界面附近的氘浓度高。

3. 发明授权

US06191463B1 Apparatus and method of improving an insulating film on a semiconductor device 失效
标题翻译：改善半导体器件上的绝缘膜的装置和方法
公开(公告)号：US06191463B1
公开(公告)日：2001-02-20
申请号：US09115233
申请日：1998-07-14
申请人： Yuichiro Mitani , Hideki Satake , Akira Toriumi
发明人： Yuichiro Mitani , Hideki Satake , Akira Toriumi
IPC分类号： H01L2978
CPC分类号： H01L21/28176 , H01L21/2254 , H01L21/2257 , H01L21/28211 , H01L21/823814 , H01L21/823857 , H01L29/4908 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/66772 , H01L29/78603 , H01L29/78609 , H01L29/94
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film. The first insulating film contains a halogen element and a combination of silicon and nitrogen or a combination of silicon, oxygen, and nitrogen. The maximum concentration of the halogen element in the first insulating film ranges from 1020 atoms/cm3 to 1021 atoms/cm3 inclusive. With this structure, the dielectric breakdown strength and the like of the insulating film increase, and the reliability of the insulating film improves.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜和形成在第一绝缘膜上的电极。第一绝缘膜含有卤素元素和硅与氮的组合或硅，氧和氮的组合。第一绝缘膜中的卤素元素的最大浓度为1020原子/ cm 3至1021原子/ cm 3。利用这种结构，绝缘膜的绝缘击穿强度等增加，并且绝缘膜的可靠性提高。

4. 发明申请

US20090014817A1 INSULATING FILM AND ELECTRONIC DEVICE 有权
标题翻译：绝缘膜和电子器件
公开(公告)号：US20090014817A1
公开(公告)日：2009-01-15
申请号：US12135919
申请日：2008-06-09
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/00
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
摘要翻译：一种电子器件，包括以硅为主要成分的半导体层; 以及直接在半导体层的主表面上外延生长的电介质膜，其中介电膜由具有Ruddlesden-Popper型结构的介电材料组成，Ruddlesden-Popper型结构由化学式An + 1BnO3n + 1表示包含选自Ba，Sr，Ca和Mg中的至少一种的元素A，元素A中的Mg含量的百分比不大于10％，并且元素B包括选自基团由Ti，Zr和Hf组成。

5. 发明申请

US20070218624A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070218624A1
公开(公告)日：2007-09-20
申请号：US11724247
申请日：2007-03-15
申请人： Hideki Satake , Toshihide Nabatame
发明人： Hideki Satake , Toshihide Nabatame
IPC分类号： H01L21/8242
CPC分类号： H01L29/513 , H01L21/28097 , H01L29/4975 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing an MIS semiconductor device includes forming a high dielectric film as a gate insulator on a semiconductor substrate of a first conductivity type, heat-treating the semiconductor substrate in ambient with hydrogen and oxygen gases to form an interface layer between the semiconductor substrate and the high dielectric film, forming a conductive film on the high dielectric film after the interfacial layer is formed, processing the conductive film in a gate pattern to form a gate electrode, and doping the semiconductor substrate with impurities of a second conductivity type using the gate electrode as a mask to form source/drain regions.
摘要翻译：一种制造MIS半导体器件的方法包括在第一导电类型的半导体衬底上形成作为栅极绝缘体的高介电膜，用氢气和氧气在环境中对半导体衬底进行热处理，以在半导体衬底和高介电膜，在形成界面层之后在高电介质膜上形成导电膜，以栅极图案处理导电膜以形成栅电极，并使用第二导电类型的杂质掺杂半导体衬底栅极电极作为掩模形成源极/漏极区域。

6. 发明授权

US07208360B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07208360B2
公开(公告)日：2007-04-24
申请号：US11385932
申请日：2006-03-22
申请人： Hideki Satake
发明人： Hideki Satake
IPC分类号： H01L21/336
CPC分类号： H01L29/518 , H01L21/225 , H01L21/28176 , H01L21/28211
摘要： A semiconductor device is proposed which includes: a semiconductor substrate of a first conductivity type; a channel region formed at a surface of the semiconductor substrate; source and drain regions of a second conductivity type formed at both sides of the channel region in the semiconductor substrate; an insulating layer covering the channel region; and a gate electrode formed on the insulating layer, the insulating layer containing impurity atoms in such a manner that a concentration thereof is non-uniformly distributed along a surface parallel to the semiconductor substrate.
摘要翻译：提出了一种半导体器件，其包括：第一导电类型的半导体衬底; 形成在所述半导体衬底的表面的沟道区; 源极和漏极区，形成在半导体衬底中的沟道区的两侧; 覆盖沟道区域的绝缘层; 以及形成在所述绝缘层上的栅电极，所述绝缘层含有杂质原子，使得其浓度沿着与所述半导体衬底平行的表面不均匀分布。

7. 发明申请

US20050017304A1 Field effect transistor and method of manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20050017304A1
公开(公告)日：2005-01-27
申请号：US10863226
申请日：2004-06-09
申请人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
发明人： Daisuke Matsushita , Yukie Nishikawa , Hideki Satake , Noburu Fukushima
IPC分类号： H01L21/336 , H01L21/84 , H01L27/12 , H01L29/786 , H01L27/01
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/7842 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.
摘要翻译：提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

8. 发明授权

US06208002B1 Field effect transistor and manufacturing method thereof 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US06208002B1
公开(公告)日：2001-03-27
申请号：US09229567
申请日：1999-01-13
申请人： Hideki Satake , Akira Toriumi
发明人： Hideki Satake , Akira Toriumi
IPC分类号： H01L31119
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/3003 , H01L29/518
摘要： In the manufacturing process of a field effect transistor, the main surface of the semiconductor layer is exposed to the atmosphere containing oxygen atoms and nitrogen atoms at first. Then, the gate insulating film is formed by introducing heavy hydrogen atoms therein such that the concentration of heavy hydrogen atoms in the interface of a gate insulating film and the gate electrode is higher than that of a middle portion of the gate insulating film located in the middle of the gate insulating film in the direction of the thickness of the gate insulating film. Subsequently, the gate electrode is formed on the gate insulating film. Then, source and drain regions are formed on the main surface of the semiconductor layer to sandwich the gate electrode therebetween. By virtue of the above-mentioned method, a gate insulating film having a small thickness and high electric stability can be obtained.
摘要翻译：在场效晶体管的制造过程中，首先将半导体层的主表面暴露于含有氧原子和氮原子的气氛中。然后，通过在其中引入重氢原子形成栅极绝缘膜，使得栅极绝缘膜和栅电极的界面中的重氢原子的浓度高于位于栅极绝缘膜中的栅极绝缘膜的中间部分栅极绝缘膜的中间在栅极绝缘膜的厚度方向上。随后，在栅极绝缘膜上形成栅电极。然后，在半导体层的主表面上形成源极和漏极区，以将栅电极夹在其间。通过上述方法，可以获得厚度小，电稳定性高的栅极绝缘膜。

9. 发明授权

US07268411B2 Insulating film and electronic device 失效
标题翻译：绝缘膜和电子设备
公开(公告)号：US07268411B2
公开(公告)日：2007-09-11
申请号：US11347319
申请日：2006-02-06
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/00
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： A capacitor includes a first electrode, an insulating film and a second electrode. The insulating film includes n layers of barrier layers each consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity, and (n−1) layers of well layers each consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity. The barrier layers and the well layers are stacked by turns. Discrete energy levels are formed in each of the well layers by a quantum effect. Thicknesses of the n layers of the barrier layers are not smaller than 2.5 angstroms. A thickness dm (angstrom) and a relative permittivity εm of an m-th barrier layer satisfying the condition: 2.5 >(d1/ε1+d2/ε2+. . . +dn/εn).
摘要翻译：电容器包括第一电极，绝缘膜和第二电极。绝缘膜包括n层阻挡层，每层由具有比第一带隙大的带隙并且具有小于第一相对介电常数的相对介电常数的材料构成，以及（n-1）层的各层由具有比第一带隙小的带隙，并且具有大于第一相对介电常数的相对介电常数。阻挡层和阱层被匝堆叠。通过量子效应在每个阱层中形成离散能级。阻挡层的n层的厚度不小于2.5埃。满足以下条件的第m个阻挡层的厚度dm（埃）和相对介电常数εε（d 1 /ε1 + d 2 /ε2 + ... + d n / epsilon）。

10. 发明授权

US07208802B2 Insulating film and electronic device 失效
标题翻译：绝缘膜和电子设备
公开(公告)号：US07208802B2
公开(公告)日：2007-04-24
申请号：US11347318
申请日：2006-02-06
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An insulating film includes a first barrier layer, a well layer provided on the first barrier layer, a second barrier layer provided on the well layer. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. The second barrier layer consists of a material having a third bandgap larger than the second bandgap and having a third relative perminivity smaller than second relative permittivity. Each of the first and second barrier layers has a thickness not smaller than 2.5 angstroms, and 2.5>(d1/ε1+d2/ε2) is satisfied where d1 and d2 (angstrom) are the thicknesses of the first and second barrier layers, respectively, ε1 is the first relative permittivity, and ε2 is the third permittivity.
摘要翻译：绝缘膜包括第一阻挡层，设置在第一阻挡层上的阱层，设置在阱层上的第二势垒层。第一阻挡层由具有第一带隙和第一相对介电常数的材料组成。阱层由具有比第一带隙小的第二带隙并且具有大于第一相对介电常数的第二相对介电常数的材料组成。第二阻挡层由具有比第二带隙大的第三带隙并且具有小于第二相对介电常数的第三相对发射率的材料组成。第一阻挡层和第二阻挡层中的每一个具有不小于2.5埃的厚度，并且其中d 1和d 2（埃）是第一和第二阻挡层的厚度，满足2.5>（d 1 /ε1 + d 2 /ε2）阻挡层分别为ε1为第一相对介电常数，ε2为第三介电常数。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式