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    • 1. 发明申请
    • REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS
    • 反应溅射法和反应溅射设备
    • US20110155561A1
    • 2011-06-30
    • US12974923
    • 2010-12-21
    • Yuichi OTANITakashi NAKAGAWA
    • Yuichi OTANITakashi NAKAGAWA
    • C23C14/54C23C14/35C23C14/14
    • C23C14/0042C23C14/088C23C14/544H01J37/3438H01J37/3447H01L45/08H01L45/1233H01L45/146H01L45/1625
    • The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.
    • 本发明提供一种反应性溅射方法和反应性溅射装置,其抑制由连续基板处理中的温度变化引起的膜质量变化。 根据与溅射空间相对的构成部件的温度,本发明的一个实施例进行反应溅射,同时调整反应气体的流量。 具体地说,在屏蔽上设置温度传感器,根据温度调节流量。 因此,即使当附着于屏蔽层的膜的脱气量变化时,也可以将反应气体的分压设定为规定值。 对于构成ReRAM的电阻变化层,诸如PrCaMnO 3(PCMO),LaSrMnO 3(LSMO)和GdBaCoxOy(GBCO)的钙钛矿材料,具有从化学计量偏移的组成的双元素型过渡金属氧化物材料 使用氧化镍(NiO),氧化钒(V2O5)等。