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1. 发明申请

US20120074442A1 LIGHT EMITTING DIODE MODULE 审中-公开
标题翻译：发光二极管模块
公开(公告)号：US20120074442A1
公开(公告)日：2012-03-29
申请号：US13309364
申请日：2011-12-01
申请人： Yu-sik KIM , Hyung-kun KIM , Cheol-soo SONE , Jae-wook JEONG
发明人： Yu-sik KIM , Hyung-kun KIM , Cheol-soo SONE , Jae-wook JEONG
IPC分类号： H01L33/50
CPC分类号： H01L33/50 , H01L33/46
摘要： A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.
摘要翻译：提供了具有改善的发光效率的发光二极管模块。发光二极管模块包括：发光芯片; 荧光体层，由荧光体材料形成，所述荧光体材料使用从所述发光芯片发射的光作为激发源发射波长比从所述发光芯片发射的光的波长的光; 以及设置在发光芯片和荧光体层之间并且反射由荧光体层发射的光的反射板。

2. 发明申请

US20120068154A1 GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：石墨量子发光装置及其制造方法
公开(公告)号：US20120068154A1
公开(公告)日：2012-03-22
申请号：US13234620
申请日：2011-09-16
申请人： Sung-won HWANG , Geun-woo KO , Sung-hyun SIM , Hun-jae CHUNG , Cheol-soo SONE , Jin-hyun LEE , Byung-hee HONG , Su-kang BAE
发明人： Sung-won HWANG , Geun-woo KO , Sung-hyun SIM , Hun-jae CHUNG , Cheol-soo SONE , Jin-hyun LEE , Byung-hee HONG , Su-kang BAE
IPC分类号： H01L51/54 , H01L51/56
CPC分类号： H01L51/502 , C09K11/65 , H01L51/5088 , H01L51/5092 , H05B33/14
摘要： A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer.
摘要翻译：石墨烯量子点发光器件包括：第一石墨烯; 设置在第一石墨烯上并且包括多个石墨烯量子点的石墨烯量子点层; 以及设置在石墨烯量子点层上的第二石墨烯。石墨烯量子点发光器件的制造方法包括：形成掺杂有第一掺杂剂的第一石墨烯; 在所述第一石墨烯上形成包括多个石墨烯量子点的石墨烯量子点层; 以及在所述石墨烯量子点层上形成掺杂有第二掺杂剂的第二石墨烯。

3. 发明申请

US20120068152A1 GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：石墨发光装置及其制造方法
公开(公告)号：US20120068152A1
公开(公告)日：2012-03-22
申请号：US13234739
申请日：2011-09-16
申请人： Sung-won HWANG , Geun-woo KO , Sung-hyun SIM , Hun-jae CHUNG , Han-kyu SEONG , Cheol-soo SONE , Jin-hyun LEE , Hyung-duk KO , Suk-ho CHOI , Sung KIM
发明人： Sung-won HWANG , Geun-woo KO , Sung-hyun SIM , Hun-jae CHUNG , Han-kyu SEONG , Cheol-soo SONE , Jin-hyun LEE , Hyung-duk KO , Suk-ho CHOI , Sung KIM
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L29/78684 , H01L33/34 , H01L51/0046
摘要： A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.
摘要翻译：提供石墨烯发光装置及其制造方法。石墨烯发光器件包括掺杂有p型掺杂剂的p型石墨烯; 掺杂有n型掺杂剂的n型石墨烯; 以及设置在所述类型石墨烯和所述n型石墨烯之间并发光的活性石墨烯，其中所述p型石墨烯，所述n型石墨烯和所述活性石墨烯水平地布置。

4. 发明申请

US20120007101A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120007101A1
公开(公告)日：2012-01-12
申请号：US13179325
申请日：2011-07-08
申请人： Jong-in YANG , Tae-hyung KIM , Si-hyuk LEE , Sang-yeob SONG , Cheol-soo SONE , Hak-hwan KIM , Jin-hyun LEE
发明人： Jong-in YANG , Tae-hyung KIM , Si-hyuk LEE , Sang-yeob SONG , Cheol-soo SONE , Hak-hwan KIM , Jin-hyun LEE
IPC分类号： H01L33/36 , H01L33/30 , H01L33/00 , H01L33/60
CPC分类号： H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
摘要翻译：半导体发光器件及其制造方法。半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘来自第二电极层的第一电极层。

5. 发明申请

US20070269918A1 METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造基于氮化物的半导体发光器件的方法
公开(公告)号：US20070269918A1
公开(公告)日：2007-11-22
申请号：US11690504
申请日：2007-03-23
申请人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
发明人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.
摘要翻译：提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。包括n掺杂半导体层，有源层，p掺杂半导体层，n电极和p电极的氮化物系半导体发光元件的制造方法包括：形成偶氮苯官能化的聚合物膜通过从由n掺杂半导体层，p掺杂半导体层，n电极和p电极组成的组中选择一层作为基底层，在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上，形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层，并除去偶氮苯官能化的聚合物膜。

6. 发明申请

US20120119249A1 LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120119249A1
公开(公告)日：2012-05-17
申请号：US13253515
申请日：2011-10-05
申请人： Tae-hyung KIM , Cheol-soo SONE , Jong-in YANG , Sang-yeob SONG , Si-hyuk LEE
发明人： Tae-hyung KIM , Cheol-soo SONE , Jong-in YANG , Sang-yeob SONG , Si-hyuk LEE
IPC分类号： H01L33/36 , H01L33/52
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/16 , H01L2933/0066
摘要： An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.
摘要翻译：一种LED及其制造方法。 LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并与两种化合物连接的第一和第二电极层。绝缘层涂覆在不同于第一和第二电极层所在的区域中。导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。另一侧表面上的第二电极连接层连接到第二电极层。

7. 发明申请

US20070262300A1 METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN 失效
标题翻译：使用亚苄基酮官能化聚合物形成精细图案的方法和使用形成微细图案的方法制造基于氮化物的半导体发光器件的方法
公开(公告)号：US20070262300A1
公开(公告)日：2007-11-15
申请号：US11683096
申请日：2007-03-07
申请人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
发明人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
IPC分类号： G03C5/00 , H01L29/808
CPC分类号： G03F7/36 , G03F7/004 , H01L33/22 , H01L33/42
摘要： Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.
摘要翻译：提供了一种以重现性反复形成图案尺寸为1μm或更小的精细图案的方法。形成微细图案的方法包括：在蚀刻层上形成偶氮苯官能化聚合物膜; 使用干涉激光束照射偶氮苯官能化的聚合物膜，通过偶氮苯官能化聚合物的光物理传输形成具有精细图案化表面起伏光栅的图案化偶氮苯官能化聚合物膜; 使用具有表面起弧光栅图案的偶氮苯官能化聚合物膜作为蚀刻掩模蚀刻蚀刻层; 并除去图案化的偶氮苯官能化聚合物膜。

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