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1. 发明申请

US20070269918A1 METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造基于氮化物的半导体发光器件的方法
公开(公告)号：US20070269918A1
公开(公告)日：2007-11-22
申请号：US11690504
申请日：2007-03-23
申请人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
发明人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.
摘要翻译：提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。包括n掺杂半导体层，有源层，p掺杂半导体层，n电极和p电极的氮化物系半导体发光元件的制造方法包括：形成偶氮苯官能化的聚合物膜通过从由n掺杂半导体层，p掺杂半导体层，n电极和p电极组成的组中选择一层作为基底层，在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上，形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层，并除去偶氮苯官能化的聚合物膜。

2. 发明申请

US20070262300A1 METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN 失效
标题翻译：使用亚苄基酮官能化聚合物形成精细图案的方法和使用形成微细图案的方法制造基于氮化物的半导体发光器件的方法
公开(公告)号：US20070262300A1
公开(公告)日：2007-11-15
申请号：US11683096
申请日：2007-03-07
申请人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
发明人： Jae-hee CHO , Cheol-soo SONE , Dong-yu KIM , Hyun-gi HONG , Seok-soon KIM
IPC分类号： G03C5/00 , H01L29/808
CPC分类号： G03F7/36 , G03F7/004 , H01L33/22 , H01L33/42
摘要： Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.
摘要翻译：提供了一种以重现性反复形成图案尺寸为1μm或更小的精细图案的方法。形成微细图案的方法包括：在蚀刻层上形成偶氮苯官能化聚合物膜; 使用干涉激光束照射偶氮苯官能化的聚合物膜，通过偶氮苯官能化聚合物的光物理传输形成具有精细图案化表面起伏光栅的图案化偶氮苯官能化聚合物膜; 使用具有表面起弧光栅图案的偶氮苯官能化聚合物膜作为蚀刻掩模蚀刻蚀刻层; 并除去图案化的偶氮苯官能化聚合物膜。

3. 发明申请

US20100166983A1 OMNI-DIRECTIONAL REFLECTOR AND LIGHT EMITTING DIODE ADOPTING THE SAME 审中-公开
标题翻译： OMNI方向反射器和发光二极管
公开(公告)号：US20100166983A1
公开(公告)日：2010-07-01
申请号：US12721132
申请日：2010-03-10
申请人： Jae-hee CHO , Jing-gun Xi , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
发明人： Jae-hee CHO , Jing-gun Xi , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
IPC分类号： B05D5/12 , C23C14/34
CPC分类号： H01L33/405 , B82Y20/00 , H01L33/32 , H01L33/42 , H01L33/46
摘要： An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.
摘要翻译：提供了具有由导电纳米棒形成的透明导电低折射率层的全向反射器和利用全向反射器的发光二极管。全向反射器包括：由导电纳米棒形成的透明导电低折射率层; 以及由金属形成的反射层。

4. 发明申请

US20120190142A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US20120190142A1
公开(公告)日：2012-07-26
申请号：US13438323
申请日：2012-04-03
申请人： Joon-seop KWAK , Jae-hee CHO
发明人： Joon-seop KWAK , Jae-hee CHO
IPC分类号： H01L33/46
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括透明衬底，在透明衬底上形成的n型化合物半导体层，顺序地形成在n型化合物半导体层的第一区域上的有源层，p型化合物半导体层和p型电极，和形成在与n型化合物半导体层的第一区域分离的第二区域上的n型电极，其中p型电极包括第一和第二电极，每个电极具有不同的电阻和反射率。

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