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    • 1. 发明申请
    • METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 制造基于氮化物的半导体发光器件的方法
    • US20070269918A1
    • 2007-11-22
    • US11690504
    • 2007-03-23
    • Jae-hee CHOCheol-soo SONEDong-yu KIMHyun-gi HONGSeok-soon KIM
    • Jae-hee CHOCheol-soo SONEDong-yu KIMHyun-gi HONGSeok-soon KIM
    • H01L21/00
    • H01L33/22H01L33/0095H01L33/42
    • Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.
    • 提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。 包括n掺杂半导体层,有源层,p掺杂半导体层,n电极和p电极的氮化物系半导体发光元件的制造方法包括:形成偶氮苯官能化的聚合物膜 通过从由n掺杂半导体层,p掺杂半导体层,n电极和p电极组成的组中选择一层作为基底层,在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上,形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层,并除去偶氮苯官能化的聚合物膜。