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1. 发明授权

US06689654B2 Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad 有权
标题翻译：制造在基板和接触垫之间具有降低的接触电阻同时保持基板和接触垫的分离的集成电路器件的方法
公开(公告)号：US06689654B2
公开(公告)日：2004-02-10
申请号：US10038967
申请日：2002-01-04
申请人： Young-pil Kim , Beom-jun Jin , Hyoung-joon Kim , Byeong-yun Nam
发明人： Young-pil Kim , Beom-jun Jin , Hyoung-joon Kim , Byeong-yun Nam
IPC分类号： H01L218238
CPC分类号： H01L21/76897 , H01L21/28525 , H01L21/76895 , H01L21/823425 , H01L21/823475
摘要： An integrated circuit device includes a substrate that has a source region and a drain region formed therein. A gate pattern is disposed on the substrate between the source region and the drain region. A lower pad layer is disposed on the source region and/or the drain region and comprises a same crystalline structure as the substrate. A conductive layer is disposed on the lower pad layer such that at least a portion of the conductive layer is disposed between the lower pad layer and the gate pattern. An insulating layer is disposed between the gate pattern and both the lower pad layer and the conductive layer, and also between the conductive layer and the substrate.
摘要翻译：集成电路器件包括其中形成有源极区和漏极区的衬底。在源极区域和漏极区域之间的衬底上设置栅极图案。下焊盘层设置在源极区域和/或漏极区域上并且包括与衬底相同的晶体结构。导电层设置在下焊盘层上，使得导电层的至少一部分设置在下焊盘层和栅极图案之间。绝缘层设置在栅极图案与下焊盘层和导电层之间以及导电层和基板之间。

2. 发明授权

US07009257B2 Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby 有权
公开(公告)号：US07009257B2
公开(公告)日：2006-03-07
申请号：US10741751
申请日：2003-12-19
申请人： Young-pil Kim , Beom-jun Jin , Hyoung-joon Kim , Byeong-yun Nam
发明人： Young-pil Kim , Beom-jun Jin , Hyoung-joon Kim , Byeong-yun Nam
IPC分类号： H01L29/72
CPC分类号： H01L21/76897 , H01L21/28525 , H01L21/76895 , H01L21/823425 , H01L21/823475
摘要： An integrated circuit device includes a substrate that has a source region and a drain region formed therein. A gate pattern is disposed on the substrate between the source region and the drain region. A lower pad layer is disposed on the source region and/or the drain region and comprises a same crystalline structure as the substrate. A conductive layer is disposed on the lower pad layer such that at least a portion of the conductive layer is disposed between the lower pad layer and the gate pattern. An insulating layer is disposed between the gate pattern and both the lower pad layer and the conductive layer, and also between the conductive layer and the substrate.

3. 发明授权

US06573168B2 Methods for forming conductive contact body for integrated circuits using dummy dielectric layer 有权
公开(公告)号：US06573168B2
公开(公告)日：2003-06-03
申请号：US09866323
申请日：2001-05-25
申请人： Ji-soo Kim , Chang-woong Chu , Dong-hyun Kim , Yong-chul Oh , Hyoung-joon Kim , Byeong-yun Nam , Kyung-won Park , Sang-hyeop Lee
发明人： Ji-soo Kim , Chang-woong Chu , Dong-hyun Kim , Yong-chul Oh , Hyoung-joon Kim , Byeong-yun Nam , Kyung-won Park , Sang-hyeop Lee
IPC分类号： H01L213205
CPC分类号： H01L21/76897 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided for conductively contacting an integrated circuit, including a plurality of spaced apart lines thereon, using a dummy dielectric layer. A dummy dielectric layer is formed between first selected ones of the spaced apart lines. An interdielectric layer is formed between second selected ones of the spaced apart lines that are different from the first selected ones of the lines. The interdielectric layer has a lower etch rate than the dummy dielectric layer with respect to a predetermined etchant. The dummy dielectric layer is etched with the predetermined etchant, to remove at least some of the dummy dielectric layer between the first selected ones of the spaced apart lines. A conductive layer is formed between the first selected ones of the spaced apart lines from which at least some of the dummy dielectric layer has been removed, to electrically contact the integrated circuit between the first selected ones of the spaced apart lines.

4. 发明授权

US06429107B2 Method for forming conductive contact of semiconductor device 有权
标题翻译：用于形成半导体器件的导电接触的方法
公开(公告)号：US06429107B2
公开(公告)日：2002-08-06
申请号：US09839855
申请日：2001-04-20
申请人： Hyoung-joon Kim , Byeong-yun Nam , Kyung-won Park
发明人： Hyoung-joon Kim , Byeong-yun Nam , Kyung-won Park
IPC分类号： H01L213205
CPC分类号： H01L21/76897 , H01L21/76801
摘要： A method for forming a conductive contact of a semiconductor device is provided. According to one aspect of the present invention, a dummy dielectric layer pattern having a dummy opening and an interdielectric layer pattern having a lower etch-rate than that of the dummy dielectric layer, for filling the dummy opening are formed on a semiconductor substrate. The dummy dielectric layer pattern using the interdielectric layer pattern as an etching mask is selectively removed, and a contact opening for exposing the semiconductor substrate of a portion in which the dummy dielectric layer pattern is located.
摘要翻译：提供一种用于形成半导体器件的导电接触的方法。根据本发明的一个方面，在半导体衬底上形成有用于填充虚拟开口的具有比虚拟电介质层低的蚀刻速率的虚拟开口和介电层图案的虚拟介电层图案。选择性地去除使用电介质层图案作为蚀刻掩模的虚拟介电层图案，以及用于使虚设电介质层图案所在的部分露出半导体基板的接触开口。

5. 发明授权

US06531250B2 Half-tone phase shift mask having a stepped aperture 失效
标题翻译：具有阶梯孔的半色调相移掩模
公开(公告)号：US06531250B2
公开(公告)日：2003-03-11
申请号：US09759161
申请日：2001-01-16
申请人： Hyoung-joon Kim
发明人： Hyoung-joon Kim
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A half-tone phase shift mask includes a transparent substrate, a phase shift pattern formed on the semiconductor substrate and having a stepped aperture which exposes the transparent substrate by a predetermined width, and an opaque film pattern formed on the upper surface of the phase shift pattern. The stepped aperture is defined by an interior side wall of the phase shift pattern. This side wall includes a horizontal surface which is parallel to the surface defining the bottom of the aperture. Light transmitted by the mask via the surface defining the bottom of the aperture has a phase difference of 180 degrees with respect to light transmitted by the mask via the horizontal surface, and light transmitted by the mask via the surface defining the bottom of the aperture has a phase difference of more than 180 degrees with respect to light transmitted by the mask via the upper surface of the phase shift pattern. Accordingly, the half-tone phase shift mask includes a first transmissive region for blocking light, a second transmissive region that sets the width of a pattern to be formed on photosensitive film, a third transmissive region for causing light transmitted thereby to be out of phase by 180 degrees with respect to the light transmitted by the second transmissive region, and a fourth transmissive region having a width greater than the width of the third transmissive region for causing light transmitted thereby to be out of phase by more than 180 degrees with respect to light transmitted by the second transmissive region.
摘要翻译：半色调相移掩模包括透明衬底，形成在半导体衬底上并具有使透明衬底暴露预定宽度的阶梯孔的相移图案，以及形成在相移上表面上的不透明膜图案模式。阶梯孔由相移图案的内侧壁限定。该侧壁包括平行于限定孔的底部的表面的水平表面。由掩模经由限定孔的底部的表面透射的光相对于由掩模经由水平表面透射的光具有180度的相位差，并且由掩模经由限定孔的底部的表面透射的光具有相对于由掩模经由相移图案的上表面透射的光大于180度的相位差。因此，半色调相移掩模包括用于阻挡光的第一透射区域，设置要在感光膜上形成的图案的宽度的第二透射区域，用于使由其透射的光不相位的第三透射区域相对于由第二透射区域透射的光180度;以及第四透射区域，其宽度大于第三透射区域的宽度，用于使透过的光相对于相对于由第二透射区域透射的光。

6. 发明授权

US5789116A Half-tone phase shift masks and fabricating methods therefor including phase shifter pattern and phase shifting groove 失效
标题翻译：半色调相移掩模及其制造方法包括移相器图案和相移槽
公开(公告)号：US5789116A
公开(公告)日：1998-08-04
申请号：US774106
申请日：1996-12-24
申请人： Hyoung-joon Kim
发明人： Hyoung-joon Kim
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： Half-tone phase shift masks (PSM) having a high transmittance and can be easy to fabricate are provided. The half-tone PSM includes a substrate which is transparent with respect to exposure light, a phase shifter pattern formed on the transparent substrate, and a phase shifting groove which can be formed by etching the transparent substrate. Methods for fabricating half-tone PSMs are also provided. The half-tone PSM can have a higher transmittance than that of a conventional half-tone PSM, and the phase shifting groove can have a uniform surface. Thus, a fine pattern having an excellent contrast can be formed using a short wavelength.
摘要翻译：提供了具有高透射率并且易于制造的半色调相移掩模（PSM）。半色调PSM包括相对于曝光是透明的基板，形成在透明基板上的移相器图案，以及可以通过蚀刻透明基板形成的移相槽。还提供了制造半色调PSM的方法。半色调PSM可以具有比常规半色调PSM更高的透射率，并且相移槽可以具有均匀的表面。因此，可以使用短波长形成具有优异对比度的精细图案。

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