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1. 发明申请

US20050036729A1 Integrated optical device and fabricating method thereof 失效
标题翻译：集成光学器件及其制造方法
公开(公告)号：US20050036729A1
公开(公告)日：2005-02-17
申请号：US10792621
申请日：2004-03-03
申请人： Young-Hyun Kim , In Kim , Sang-Moon Lee , Byung-Ok Jeon
发明人： Young-Hyun Kim , In Kim , Sang-Moon Lee , Byung-Ok Jeon
IPC分类号： G02F1/025 , G02B6/12 , G02B6/134 , H01S5/026
CPC分类号： G02B6/1342 , G02B6/12004 , H01S5/0265 , H01S5/3072
摘要： An integrated optical device having at least two optical devices integrated therein and a method of fabricating the integrated optical device are provided. To fabricate an integrated optical device having optically connected and electrically isolated first and second optical devices on a substrate of a first conductive type, an active layer and a clad layer of a second conductive type are first formed in a mesa structure on the substrate, an SI clad layer is then formed on the substrate surrounding the clad layer of the second conductive type and the active layer, and finally first and second conductive layers are formed into trenches by diffusing a dopant of the second conductive type into the SI clad layer in areas corresponding to the first and second optical devices.
摘要翻译：提供一种其中集成有至少两个光学器件的集成光学器件和制造该集成光学器件的方法。为了制造在第一导电类型的衬底上具有光学连接和电隔离的第一和第二光学器件的集成光学器件，首先在衬底上的台面结构中形成第二导电类型的有源层和覆盖层，然后在围绕第二导电类型和有源层的包覆层的衬底上形成SI包覆层，最后通过将第二导电类型的掺杂剂扩散到区域中的SI包覆层中而将第一和第二导电层形成沟槽对应于第一和第二光学装置。

2. 发明授权

US07016558B2 Integrated optical device and fabricating method thereof 失效
标题翻译：集成光学器件及其制造方法
公开(公告)号：US07016558B2
公开(公告)日：2006-03-21
申请号：US10792621
申请日：2004-03-03
申请人： Young-Hyun Kim , In Kim , Sang-Moon Lee , Byung-Ok Jeon
发明人： Young-Hyun Kim , In Kim , Sang-Moon Lee , Byung-Ok Jeon
IPC分类号： G02B6/12
CPC分类号： G02B6/1342 , G02B6/12004 , H01S5/0265 , H01S5/3072
摘要： An integrated optical device having at least two optical devices integrated therein and a method of fabricating the integrated optical device are provided. To fabricate an integrated optical device having optically connected and electrically isolated first and second optical devices on a substrate of a first conductive type, an active layer and a clad layer of a second conductive type are first formed in a mesa structure on the substrate, an SI clad layer is then formed on the substrate surrounding the clad layer of the second conductive type and the active layer, and finally first and second conductive layers are formed into trenches by diffusing a dopant of the second conductive type into the SI clad layer in areas corresponding to the first and second optical devices.
摘要翻译：提供一种其中集成有至少两个光学器件的集成光学器件和制造该集成光学器件的方法。为了制造在第一导电类型的衬底上具有光学连接和电隔离的第一和第二光学器件的集成光学器件，首先在衬底上的台面结构中形成第二导电类型的有源层和覆盖层，然后在围绕第二导电类型和有源层的包覆层的衬底上形成SI包覆层，最后通过将第二导电类型的掺杂剂扩散到区域中的SI包覆层中而将第一和第二导电层形成沟槽对应于第一和第二光学装置。

3. 发明申请

US20050259708A1 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US20050259708A1
公开(公告)日：2005-11-24
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01S5/042 , G02B6/12 , H01S3/08 , H01S5/026 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

4. 发明授权

US07127134B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07127134B2
公开(公告)日：2006-10-24
申请号：US10864058
申请日：2004-06-09
申请人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
发明人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
IPC分类号： G02B6/12 , G02B6/10 , G02B6/42 , H01S5/00 , H01L27/15
CPC分类号： G02B6/26 , H01S5/0264
摘要： A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
摘要翻译：公开了一种单片集成半导体光学元件。所述半导体光学元件包括基板，形成在所述基板上的第一波导，所述基板包括用于产生光的第一有源层和半绝缘层，所述第一有源层在所述基板上生长以包围所述第一波导层的周边，窗口区域，用于扩散从第一波导输出的光并输出漫射光。半导体光学元件还包括形成在靠近第一波导的窗口区域中的至少一个第二波导，包括用于检测由窗口区域扩散的光的一部分的第二有源层。

5. 发明申请

US20050129368A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20050129368A1
公开(公告)日：2005-06-16
申请号：US10864058
申请日：2004-06-09
申请人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
发明人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
IPC分类号： G02B6/122 , G02B6/26 , H01L31/12 , H01S5/026 , G02B6/42
CPC分类号： G02B6/26 , H01S5/0264
摘要： A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
摘要翻译：公开了一种单片集成半导体光学元件。所述半导体光学元件包括基板，形成在所述基板上的第一波导，所述基板包括用于产生光的第一有源层和半绝缘层，所述第一有源层在所述基板上生长以包围所述第一波导层的周边，窗口区域，用于扩散从第一波导输出的光并输出漫射光。半导体光学元件还包括形成在靠近第一波导的窗口区域中的至少一个第二波导，包括用于检测由窗口区域扩散的光的一部分的第二有源层。

6. 发明授权

US07288422B2 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US07288422B2
公开(公告)日：2007-10-30
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

7. 发明授权

US07361286B2 Method of detecting etching end-point 失效
标题翻译：腐蚀终点检测方法
公开(公告)号：US07361286B2
公开(公告)日：2008-04-22
申请号：US11222136
申请日：2005-09-08
申请人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
发明人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
IPC分类号： G01L21/50 , G01R31/00
CPC分类号： H01L22/34 , H01L22/20
摘要： A method of detecting an etching end-point includes the steps of: forming a mask on a pattern area of an etching object; forming an etching indicator on an etching area of the etching object, which is not covered by the mask; etching the etching object using the mask; and evaluating the size of a remaining object covered by the mask using the etching indicator.
摘要翻译：检测蚀刻端点的方法包括以下步骤：在蚀刻对象的图案区域上形成掩模; 在蚀刻对象的蚀刻区域上形成蚀刻指示器，其不被掩模覆盖; 使用掩模蚀刻蚀刻对象; 以及使用蚀刻指示器评估由掩模覆盖的剩余物体的尺寸。

8. 发明授权

US07142343B2 Electro-absorptive optical modulator module having monolithic integrated photo detector 有权
标题翻译：具有单片集成光电检测器的吸收光调制器模块
公开(公告)号：US07142343B2
公开(公告)日：2006-11-28
申请号：US10837938
申请日：2004-05-03
申请人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
发明人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
IPC分类号： G02F1/03 , G02F1/07
CPC分类号： H01S5/12 , H01S5/0264 , H01S5/0265 , H01S5/106 , H01S5/1064 , H01S5/1203
摘要： An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.
摘要翻译：一种单片集成在半导体衬底上的电吸收光调制器模块，其包括具有用于振荡光的光栅的分布式反馈激光器，并且通过模块的第一端和第二端输出振荡的光。电吸收调制器通过分布式反馈激光器的第一端调制第一光输出，并且光学检测器提供通过模块的第二端的第二光输出的检测。光检测器形成在半导体衬底上与分布反馈激光器的第二端相对。第一内部窗口允许衰减第二光的强度并使分布式反馈激光器和光学检测器彼此电绝缘，其中第一内部窗口布置在分布式反馈激光器和光学检测器之间。

9. 发明申请

US20060109884A1 Distributed feedback semiconductor laser and method for manufacturing the same 审中-公开
标题翻译：分布式反馈半导体激光器及其制造方法
公开(公告)号：US20060109884A1
公开(公告)日：2006-05-25
申请号：US11250209
申请日：2005-10-14
申请人： Young-Hyun Kim , Jung-Kee Lee , In Kim , Sung-Soo Park
发明人： Young-Hyun Kim , Jung-Kee Lee , In Kim , Sung-Soo Park
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/1228 , H01S5/2275
摘要： A distributed feedback semiconductor laser oscillating in a single mode and a method for manufacturing the same is disclosed. The distributed feedback semiconductor laser includes an active layer; a clad layer formed adjacent to the active layer; and diffraction gratings periodically formed in the clad layer and separated from each other by a predetermined distance. The diffraction gratings are formed of a nonconductor so that a current injected into the active layer is partially blocked and distribution of gain coefficient is varied. The nonconductor is an oxidized semiconductor material.
摘要翻译：公开了一种单模振荡的分布式反馈半导体激光器及其制造方法。分布式反馈半导体激光器包括有源层; 与活性层相邻形成的覆层; 以及在包层中周期性地形成并且彼此分开预定距离的衍射光栅。衍射光栅由非导体形成，使得注入有源层的电流被部分阻挡，并且增益系数的分布变化。非导体是氧化半导体材料。

10. 发明申请

US20070183472A1 Vertical-cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20070183472A1
公开(公告)日：2007-08-09
申请号：US11584987
申请日：2006-10-23
申请人： Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
发明人： Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
IPC分类号： H01S5/00
CPC分类号： H01S5/18369 , G02B6/4214 , H01S5/0071 , H01S5/026 , H01S5/0425 , H01S5/18341 , H01S5/2213 , H01S2301/176
摘要： A vertical-cavity surface emitting laser includes a substrate and a first mirror that is grown on the substrate, a second mirror grown on the first mirror for resonating the first mirror and light, an active layer between the first mirror and the second mirror for generating and amplifying the light, an upper electrode grown on the active layer and a lower electrode formed on the first mirror for supplying current to the active layer, a planarizing polymer formed on the first mirror for burying the active layer and the second layer, and a first external terminal extending from the upper electrode in a vertical upward direction to be exposed to the top surface of the planarizing polymer and a second external terminal extending from the lower electrode to expose its one surface to the top surface of the planarizing polymer.
摘要翻译：垂直腔表面发射激光器包括衬底和在衬底上生长的第一反射镜，在第一反射镜上生长以谐振第一反射镜和光的第二反射镜，在第一反射镜和第二反射镜之间的有源层，用于产生并且放大光，在有源层上生长的上电极和形成在第一反射镜上用于向有源层供电的下电极，形成在第一反射镜上用于掩埋有源层和第二层的平坦化聚合物，以及第一外部端子从上部电极沿垂直向上的方向延伸以暴露于平坦化聚合物的顶表面;以及第二外部端子，其从下部电极延伸以将其一个表面暴露于平坦化聚合物的顶表面。

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