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    • 4. 发明授权
    • Vertical-cavity surface emitting laser
    • 垂直腔表面发射激光
    • US07433379B2
    • 2008-10-07
    • US11584987
    • 2006-10-23
    • Eun-Hwa LeeYoung-Hyun KimIn KimYu-Dong Bae
    • Eun-Hwa LeeYoung-Hyun KimIn KimYu-Dong Bae
    • H01S5/00
    • H01S5/18369G02B6/4214H01S5/0071H01S5/026H01S5/0425H01S5/18341H01S5/2213H01S2301/176
    • A vertical-cavity surface emitting laser includes a substrate and a first mirror that is grown on the substrate, a second mirror grown on the first mirror for resonating the first mirror and light, an active layer between the first mirror and the second mirror for generating and amplifying the light, an upper electrode grown on the active layer and a lower electrode formed on the first mirror for supplying current to the active layer, a planarizing polymer formed on the first mirror for burying the active layer and the second layer, and a first external terminal extending from the upper electrode in a vertical upward direction to be exposed to the top surface of the planarizing polymer and a second external terminal extending from the lower electrode to expose its one surface to the top surface of the planarizing polymer.
    • 垂直腔表面发射激光器包括衬底和在衬底上生长的第一反射镜,在第一反射镜上生长以谐振第一反射镜和光的第二反射镜,在第一反射镜和第二反射镜之间的有源层,用于产生 并且放大光,在有源层上生长的上电极和形成在第一反射镜上用于向有源层供电的下电极,形成在第一反射镜上用于掩埋有源层和第二层的平坦化聚合物,以及 第一外部端子从上部电极沿垂直向上的方向延伸以暴露于平坦化聚合物的顶表面;以及第二外部端子,其从下部电极延伸以将其一个表面暴露于平坦化聚合物的顶表面。
    • 7. 发明申请
    • Semiconductor optical device and semiconductor optical package using the same
    • 半导体光学器件和半导体光学封装采用相同的
    • US20050158058A1
    • 2005-07-21
    • US10896343
    • 2004-07-21
    • Yu-Dong BaeByung-Kwon Kang
    • Yu-Dong BaeByung-Kwon Kang
    • H01S5/026G02B6/12G02F1/015H01S5/022H04B10/04H04B10/12
    • G02F1/015G02F2001/0157
    • A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and the optical devices on the semiconductor substrate, at least two metallic pads, one of which being an electrode of the modulator, are formed at a distance from each other on the insulative layer. A plurality of metallic wires are adapted for electrically connecting the electro-absorption modulator to the metallic pads and adjusting a value of inductance of the electro-absorption modulator. The metallic wires are formed on the insulative layer. A dielectric layer formed under the insulative layer provides a minimizing of parasitic capacitance generated in the metallic pads and the metallic wires by being formed under the metallic pads and the metallic wires.
    • 包括半导体衬底,电吸收调制器和至少一个光学器件的半导体光学器件被单片集成在半导体衬底上。 绝缘层围绕电吸收调制器和半导体衬底上的光学器件,至少两个金属焊盘(其中一个是调制器的电极)在绝缘层上形成为彼此距离一定距离。 多个金属线适于将电吸收调制器电连接到金属焊盘并调节电吸收调制器的电感值。 金属线形成在绝缘层上。 形成在绝缘层下面的电介质层通过形成在金属焊盘和金属线下面,使金属焊盘和金属线中产生的寄生电容最小化。