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1. 发明申请

US20050259708A1 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US20050259708A1
公开(公告)日：2005-11-24
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01S5/042 , G02B6/12 , H01S3/08 , H01S5/026 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

2. 发明授权

US07288422B2 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US07288422B2
公开(公告)日：2007-10-30
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

3. 发明授权

US07127134B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07127134B2
公开(公告)日：2006-10-24
申请号：US10864058
申请日：2004-06-09
申请人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
发明人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
IPC分类号： G02B6/12 , G02B6/10 , G02B6/42 , H01S5/00 , H01L27/15
CPC分类号： G02B6/26 , H01S5/0264
摘要： A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
摘要翻译：公开了一种单片集成半导体光学元件。所述半导体光学元件包括基板，形成在所述基板上的第一波导，所述基板包括用于产生光的第一有源层和半绝缘层，所述第一有源层在所述基板上生长以包围所述第一波导层的周边，窗口区域，用于扩散从第一波导输出的光并输出漫射光。半导体光学元件还包括形成在靠近第一波导的窗口区域中的至少一个第二波导，包括用于检测由窗口区域扩散的光的一部分的第二有源层。

4. 发明申请

US20050129368A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20050129368A1
公开(公告)日：2005-06-16
申请号：US10864058
申请日：2004-06-09
申请人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
发明人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
IPC分类号： G02B6/122 , G02B6/26 , H01L31/12 , H01S5/026 , G02B6/42
CPC分类号： G02B6/26 , H01S5/0264
摘要： A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
摘要翻译：公开了一种单片集成半导体光学元件。所述半导体光学元件包括基板，形成在所述基板上的第一波导，所述基板包括用于产生光的第一有源层和半绝缘层，所述第一有源层在所述基板上生长以包围所述第一波导层的周边，窗口区域，用于扩散从第一波导输出的光并输出漫射光。半导体光学元件还包括形成在靠近第一波导的窗口区域中的至少一个第二波导，包括用于检测由窗口区域扩散的光的一部分的第二有源层。

5. 发明授权

US07142343B2 Electro-absorptive optical modulator module having monolithic integrated photo detector 有权
标题翻译：具有单片集成光电检测器的吸收光调制器模块
公开(公告)号：US07142343B2
公开(公告)日：2006-11-28
申请号：US10837938
申请日：2004-05-03
申请人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
发明人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
IPC分类号： G02F1/03 , G02F1/07
CPC分类号： H01S5/12 , H01S5/0264 , H01S5/0265 , H01S5/106 , H01S5/1064 , H01S5/1203
摘要： An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.
摘要翻译：一种单片集成在半导体衬底上的电吸收光调制器模块，其包括具有用于振荡光的光栅的分布式反馈激光器，并且通过模块的第一端和第二端输出振荡的光。电吸收调制器通过分布式反馈激光器的第一端调制第一光输出，并且光学检测器提供通过模块的第二端的第二光输出的检测。光检测器形成在半导体衬底上与分布反馈激光器的第二端相对。第一内部窗口允许衰减第二光的强度并使分布式反馈激光器和光学检测器彼此电绝缘，其中第一内部窗口布置在分布式反馈激光器和光学检测器之间。

6. 发明申请

US20050128557A1 Electro-absorptive optical modulator module having monolithic integrated photo detector 有权
标题翻译：具有单片集成光电检测器的吸收光调制器模块
公开(公告)号：US20050128557A1
公开(公告)日：2005-06-16
申请号：US10837938
申请日：2004-05-03
申请人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
发明人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
IPC分类号： G02F1/017 , G02B6/12 , G02F1/03 , G02F1/07 , H01S3/00 , H01S5/026 , H01S5/10 , H01S5/12
CPC分类号： H01S5/12 , H01S5/0264 , H01S5/0265 , H01S5/106 , H01S5/1064 , H01S5/1203
摘要： An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.
摘要翻译：一种单片集成在半导体衬底上的电吸收光调制器模块，其包括具有用于振荡光的光栅的分布式反馈激光器，并且通过模块的第一端和第二端输出振荡的光。电吸收调制器通过分布式反馈激光器的第一端调制第一光输出，并且光学检测器提供通过模块的第二端的第二光输出的检测。光检测器形成在半导体衬底上与分布反馈激光器的第二端相对。第一内部窗口允许衰减第二光的强度并使分布式反馈激光器和光学检测器彼此电绝缘，其中第一内部窗口布置在分布式反馈激光器和光学检测器之间。

7. 发明申请

US20050158058A1 Semiconductor optical device and semiconductor optical package using the same 失效
标题翻译：半导体光学器件和半导体光学封装采用相同的
公开(公告)号：US20050158058A1
公开(公告)日：2005-07-21
申请号：US10896343
申请日：2004-07-21
申请人： Yu-Dong Bae , Byung-Kwon Kang
发明人： Yu-Dong Bae , Byung-Kwon Kang
IPC分类号： H01S5/026 , G02B6/12 , G02F1/015 , H01S5/022 , H04B10/04 , H04B10/12
CPC分类号： G02F1/015 , G02F2001/0157
摘要： A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and the optical devices on the semiconductor substrate, at least two metallic pads, one of which being an electrode of the modulator, are formed at a distance from each other on the insulative layer. A plurality of metallic wires are adapted for electrically connecting the electro-absorption modulator to the metallic pads and adjusting a value of inductance of the electro-absorption modulator. The metallic wires are formed on the insulative layer. A dielectric layer formed under the insulative layer provides a minimizing of parasitic capacitance generated in the metallic pads and the metallic wires by being formed under the metallic pads and the metallic wires.
摘要翻译：包括半导体衬底，电吸收调制器和至少一个光学器件的半导体光学器件被单片集成在半导体衬底上。绝缘层围绕电吸收调制器和半导体衬底上的光学器件，至少两个金属焊盘（其中一个是调制器的电极）在绝缘层上形成为彼此距离一定距离。多个金属线适于将电吸收调制器电连接到金属焊盘并调节电吸收调制器的电感值。金属线形成在绝缘层上。形成在绝缘层下面的电介质层通过形成在金属焊盘和金属线下面，使金属焊盘和金属线中产生的寄生电容最小化。

8. 发明授权

US07414767B2 Semiconductor optical device and semiconductor optical package using the same 失效
标题翻译：半导体光学器件和半导体光学封装采用相同的
公开(公告)号：US07414767B2
公开(公告)日：2008-08-19
申请号：US10896343
申请日：2004-07-21
申请人： Yu-Dong Bae , Byung-Kwon Kang
发明人： Yu-Dong Bae , Byung-Kwon Kang
IPC分类号： G02B1/03
CPC分类号： G02F1/015 , G02F2001/0157
摘要： A semiconductor optical device, which includes a semiconductor substrate, an electro-absorption modulator, and at least one optical device is monolithically integrated on the semiconductor substrate. An insulative layer surrounds the electro-absorption modulator and the optical devices on the semiconductor substrate, at least two metallic pads, one of which being an electrode of the modulator, are formed at a distance from each other on the insulative layer. A plurality of metallic wires are adapted for electrically connecting the electro-absorption modulator to the metallic pads and adjusting a value of inductance of the electro-absorption modulator. The metallic wires are formed on the insulative layer. A dielectric layer formed under the insulative layer provides a minimizing of parasitic capacitance generated in the metallic pads and the metallic wires by being formed under the metallic pads and the metallic wires.
摘要翻译：包括半导体衬底，电吸收调制器和至少一个光学器件的半导体光学器件被单片集成在半导体衬底上。绝缘层围绕电吸收调制器和半导体衬底上的光学器件，至少两个金属焊盘（其中一个是调制器的电极）在绝缘层上形成为彼此距离一定距离。多个金属线适于将电吸收调制器电连接到金属焊盘并调节电吸收调制器的电感值。金属线形成在绝缘层上。形成在绝缘层下面的电介质层通过形成在金属焊盘和金属线下面，使金属焊盘和金属线中产生的寄生电容最小化。

9. 发明授权

US07245644B2 Semiconductor monolithic integrated optical transmitter 失效
标题翻译：半导体单片集成光发射机
公开(公告)号：US07245644B2
公开(公告)日：2007-07-17
申请号：US10716653
申请日：2003-11-19
申请人： Byung-Kwon Kang , Shi-Yun Cho , In Kim , Do-Young Rhee , Tae-Il Kim , Dong-Hoon Jang , Seung-Won Lee , Duk-Ho Jeon , June-Hyeon Ahn , Young-Min Lee , Jong-Ryeol Kim
发明人： Byung-Kwon Kang , Shi-Yun Cho , In Kim , Do-Young Rhee , Tae-Il Kim , Dong-Hoon Jang , Seung-Won Lee , Duk-Ho Jeon , June-Hyeon Ahn , Young-Min Lee , Jong-Ryeol Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/026 , H01S5/0265
摘要： A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.
摘要翻译：公开了一种包括形成在半导体衬底上的多个有源层的半导体单片集成光发射器，其包括：分布反馈激光二极管，包括用于反射具有预定波长的光的光栅和用于振荡来自光栅的接收光的第一有源层 ; 一种电吸收调制器，包括用于接收来自第一有源层的光的第二有源层，其中根据施加的电压通过吸收变化改变接收的光强度; 光放大器，包括用于放大来自第二有源层的接收光的第三有源层; 第一有源层和第二有源层之间的第一光衰减器; 以及在第二有源层和第三有源层之间的第二光衰减器。

10. 发明申请

US20050006654A1 Semiconductor monolithic integrated optical transmitter 失效
标题翻译：半导体单片集成光发射机
公开(公告)号：US20050006654A1
公开(公告)日：2005-01-13
申请号：US10716653
申请日：2003-11-19
申请人： Byung-Kwon Kang , Shi-Yun Cho , In Kim , Do-Young Rhee , Tae-Il Kim , Dong-Hoon Jang , Seung-Won Lee , Duk-Ho Jeon , June-Hyeon Ahn , Young-Min Lee , Jong-Ryeol Kim
发明人： Byung-Kwon Kang , Shi-Yun Cho , In Kim , Do-Young Rhee , Tae-Il Kim , Dong-Hoon Jang , Seung-Won Lee , Duk-Ho Jeon , June-Hyeon Ahn , Young-Min Lee , Jong-Ryeol Kim
IPC分类号： G02B6/12 , H01L33/00 , H01S5/026
CPC分类号： H01S5/026 , H01S5/0265
摘要： A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.
摘要翻译：公开了一种包括形成在半导体衬底上的多个有源层的半导体单片集成光发射器，其包括：分布反馈激光二极管，包括用于反射具有预定波长的光的光栅和用于振荡来自光栅的接收光的第一有源层 ; 一种电吸收调制器，包括用于接收来自第一有源层的光的第二有源层，其中根据施加的电压通过吸收变化改变接收的光强度; 光放大器，包括用于放大来自第二有源层的接收光的第三有源层; 第一有源层和第二有源层之间的第一光衰减器; 以及在第二有源层和第三有源层之间的第二光衰减器。

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