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1. 发明授权

US08212212B2 Thermoelectric device and method of forming the same, temperature sensing sensor, and heat-source image sensor using the same 失效
标题翻译：热电装置及其形成方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US08212212B2
公开(公告)日：2012-07-03
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： G02F1/01
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

2. 发明申请

US20110198498A1 THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME 失效
标题翻译：热电装置及其制造方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US20110198498A1
公开(公告)日：2011-08-18
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： H01L23/34 , H01L21/02 , H01J31/49 , G01K7/04 , B82Y99/00
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

3. 发明申请

US20120167936A1 THERMOELECTRIC DEVICE BASED ON SILICON NANOWIRES AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于硅纳米管的热电装置及其制造方法
公开(公告)号：US20120167936A1
公开(公告)日：2012-07-05
申请号：US13325082
申请日：2011-12-14
申请人： Young Sam PARK , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Young Sam PARK , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/32 , H01L21/02 , B82Y40/00 , B82Y99/00 , H01L35/34
CPC分类号： H01L29/0673 , B82Y40/00 , H01L35/22 , H01L35/32
摘要： Disclosed are a thermoelectric device based on silicon nanowires including: a substrate; a silicon heat absorbing part absorbing heat, a silicon nanowire leg transferring heat, and a silicon heat releasing part releasing heat, which are formed on the substrate; and an insulating film with at least one or more holes, which is formed on the substrate including the silicon heat absorbing part, the silicon nanowire leg, and the silicon heat releasing part, and a method for manufacturing the same.
摘要翻译：公开了一种基于硅纳米线的热电装置，包括：基板; 吸收热的硅吸热部，传递热的硅纳米线支脚和释放热的硅散热部，形成在基板上; 以及具有至少一个以上的孔的绝缘膜及其制造方法，该绝缘膜形成在包括硅吸热部，硅纳米线支腿和硅散热部的基板上。

4. 发明申请

US20130139864A1 THERMOELECTRIC DEVICES 有权
标题翻译：热电装置
公开(公告)号：US20130139864A1
公开(公告)日：2013-06-06
申请号：US13611189
申请日：2012-09-12
申请人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
发明人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
IPC分类号： H01L35/32 , H01L35/14 , H01L35/16 , B82Y99/00
CPC分类号： H01L35/32 , B82Y30/00
摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.
摘要翻译：提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。声子可能被粗糙的侧面散射，从而降低了装置的热导率。电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。光滑的侧面可以用于电子的流动路径。结果，在热电装置中，可以降低导热性并且可以保持导电性。

5. 发明授权

US09093606B2 Thermoelectric devices 有权
标题翻译：热电装置
公开(公告)号：US09093606B2
公开(公告)日：2015-07-28
申请号：US13611189
申请日：2012-09-12
申请人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
发明人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
IPC分类号： H01L35/30 , H01L35/32 , B82Y30/00
CPC分类号： H01L35/32 , B82Y30/00
摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.
摘要翻译：提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。声子可能被粗糙的侧面散射，从而降低了装置的热导率。电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。光滑的侧面可以用于电子的流动路径。结果，在热电装置中，可以降低导热性并且可以保持导电性。

6. 发明申请

US20110192439A1 THERMOELECTRIC ARRAY 审中-公开
标题翻译：热电阵列
公开(公告)号：US20110192439A1
公开(公告)日：2011-08-11
申请号：US13022251
申请日：2011-02-07
申请人： Young Sam PARK , Moon Gyu Jang , Myung Sim Jun , Young Hoon Hyun
发明人： Young Sam PARK , Moon Gyu Jang , Myung Sim Jun , Young Hoon Hyun
IPC分类号： H01L35/30
CPC分类号： H01L35/30
摘要： Provided is a thermoelectric array including a plurality of thermoelectric elements arranged in m rows and n columns (each of m and n is an integer equal to or more than 1), each thermoelectric element including a heat absorption layer, a first heat sink layer, a second heat sink layer, a first-conductivity-type leg, and a second-conductivity-type leg formed on the same plane. The heat absorption layers of the thermoelectric elements adjacently disposed in a row or column direction are disposed adjacent to each other, and the first and second heat sink layers of the adjacent thermoelectric elements are disposed adjacent to each other. In this case, thermal interference between adjacent thermoelectric elements may be minimized, thereby obtaining a thermoelectric array having a high figure of merit.
摘要翻译：本发明提供一种热电阵列，其包括以m行n列（m和n为1以上的整数）排列的多个热电元件，热电元件包括吸热层，第1散热层，第二散热层，第一导电型脚和形成在同一平面上的第二导电型脚。相邻地配置在行或列方向上的热电元件的吸热层相邻配置，相邻的热电元件的第一和第二散热层相邻配置。在这种情况下，相邻热电元件之间的热干扰可以最小化，从而获得具有高品质因数的热电阵列。

7. 发明申请

US20100294327A1 THERMOELECTRIC DEVICE USING RADIANT HEAT AS HEAT SOURCE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用辐射热作为热源的热电装置及其制造方法
公开(公告)号：US20100294327A1
公开(公告)日：2010-11-25
申请号：US12773226
申请日：2010-05-04
申请人： Young Sam PARK , Jung Wook Lim , Moon Gyu Jang
发明人： Young Sam PARK , Jung Wook Lim , Moon Gyu Jang
IPC分类号： H01L35/20 , H01L35/00 , H01L21/30 , H01L35/34
CPC分类号： H01L35/30 , H01L35/32
摘要： Provided are a thermoelectric device using radiant heat as a heat source and a method of fabricating the same. In the thermoelectric device, an anti-reflection layer formed on a heat absorption layer causes as much radiant light as possible to be absorbed by the heat absorption layer without being reflected to the outside so that the radiant heat absorption efficiency can be improved. Also, in the thermoelectric device, an insulating layer formed on a heat dissipation layer and a first reflection layer formed on the insulating layer can prevent external radiant heat from being absorbed by the heat dissipation layer, and as much radiant heat transferred to the heat dissipation layer as possible can be dissipated away from the heat dissipation layer by a second reflection layer thermally connected with the heat dissipation layer so that the radiant heat emission efficiency can be improved.
摘要翻译：提供了使用辐射热作为热源的热电装置及其制造方法。在热电装置中，形成在吸热层上的防反射层使得尽可能多的辐射光被吸收层吸收，而不会反射到外部，从而可以提高辐射吸收效率。此外，在热电装置中，形成在散热层上的绝缘层和形成在绝缘层上的第一反射层可以防止外部辐射热被散热层吸收，并且多少辐射热传递到散热层可以通过与散热层热连接的第二反射层从散热层消散，从而可以提高辐射热发射效率。

8. 发明申请

US20110150036A1 FLEXIBLE THERMOELECTRIC GENERATOR, WIRELESS SENSOR NODE INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：柔性热电发生器，包括其的无线传感器节点及其制造方法
公开(公告)号：US20110150036A1
公开(公告)日：2011-06-23
申请号：US12949479
申请日：2010-11-18
申请人： Jae Woo Lee , Yil Suk Yang , Se Wan Heo , Moon Gyu Jang , Jong Dae Kim
发明人： Jae Woo Lee , Yil Suk Yang , Se Wan Heo , Moon Gyu Jang , Jong Dae Kim
IPC分类号： G01K7/02 , H01L35/32 , H01L21/30
CPC分类号： G01K7/02 , G01K2215/00 , H01L35/32 , H01L35/34
摘要： Provided are a flexible thermoelectric generator, a wireless sensor node including the same and a method of manufacturing the same. The flexible thermoelectric generator includes a plurality of P-type semiconductors and a plurality of N-type semiconductors, which are alternately arranged, an upper metal for connecting upper surfaces of the adjacent P-type semiconductor and N-type semiconductor, a lower metal for connecting lower surfaces of the adjacent P-type semiconductor and N-type semiconductor, and alternately disposed with respect to the upper metal, a P-type metal connected to at least one P-type semiconductor among the plurality of P-type semiconductors, and an N-type metal connected to at least one N-type semiconductor among the plurality of N-type semiconductors.
摘要翻译：提供了一种柔性热电发电机，包括该热电发电机的无线传感器节点及其制造方法。柔性热电发电机包括交替布置的多个P型半导体和多个N型半导体，用于连接相邻P型半导体和N型半导体的上表面的上金属，用于连接相邻的P型半导体和N型半导体的下表面，并且相对于上部金属交替布置，连接到多个P型半导体中的至少一个P型半导体的P型金属，以及与多个N型半导体中的至少一个N型半导体连接的N型金属。

9. 发明申请

US20090152597A1 BIOSENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US20090152597A1
公开(公告)日：2009-06-18
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

10. 发明授权

US08058673B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08058673B2
公开(公告)日：2011-11-15
申请号：US12240133
申请日：2008-09-29
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

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