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1. 发明授权

US08940995B2 Thermoelectric device and method for fabricating the same 有权
标题翻译：热电装置及其制造方法
公开(公告)号：US08940995B2
公开(公告)日：2015-01-27
申请号：US12632403
申请日：2009-12-07
申请人： Young-Sam Park , Moon-Gyu Jang , Taehyoung Zyung , Younghoon Hyun , Myungsim Jun
发明人： Young-Sam Park , Moon-Gyu Jang , Taehyoung Zyung , Younghoon Hyun , Myungsim Jun
IPC分类号： H01L35/12 , H01L35/32
CPC分类号： H01L35/32 , H01L35/26 , H01L35/34
摘要： A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.
摘要翻译：提供了一种热电装置。热电装置包括第一和第二电极，第一支腿，第二支腿和公共电极。第一支腿设置在第一电极上并且包括一个或多个第一半导体图案和一个或多个第一屏障图案。第二腿设置在第二电极上，并且包括一个或多个第二半导体图案和一个或多个第二屏障图案。公共电极设置在第一腿部和第二腿部上。这里，第一阻挡图案的热导率比第一半导体图案低，第二阻挡图案的热导率比第二半导体图案低。第一/第二阻挡图案具有比第一/第二半导体图案更高的导电性。第一/第二屏障图案与第一/第二半导体图案形成欧姆接触。

2. 发明申请

US20110000517A1 THERMOELECTRIC DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：热电装置及其制造方法
公开(公告)号：US20110000517A1
公开(公告)日：2011-01-06
申请号：US12632403
申请日：2009-12-07
申请人： Young-Sam Park , Moon-Gyu Jang , Taehyoung Zyung , Younghoon Hyun , Myungsim Jun
发明人： Young-Sam Park , Moon-Gyu Jang , Taehyoung Zyung , Younghoon Hyun , Myungsim Jun
IPC分类号： H01L35/20 , H01L35/00 , B05D5/12 , H01L35/34
CPC分类号： H01L35/32 , H01L35/26 , H01L35/34
摘要： A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.
摘要翻译：提供了一种热电装置。热电装置包括第一和第二电极，第一支腿，第二支腿和公共电极。第一支腿设置在第一电极上并且包括一个或多个第一半导体图案和一个或多个第一屏障图案。第二腿设置在第二电极上，并且包括一个或多个第二半导体图案和一个或多个第二屏障图案。公共电极设置在第一腿部和第二腿部上。这里，第一阻挡图案的热导率比第一半导体图案低，第二阻挡图案的热导率比第二半导体图案低。第一/第二阻挡图案具有比第一/第二半导体图案更高的导电性。第一/第二屏障图案与第一/第二半导体图案形成欧姆接触。

3. 发明申请

US20120167936A1 THERMOELECTRIC DEVICE BASED ON SILICON NANOWIRES AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于硅纳米管的热电装置及其制造方法
公开(公告)号：US20120167936A1
公开(公告)日：2012-07-05
申请号：US13325082
申请日：2011-12-14
申请人： Young Sam PARK , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Young Sam PARK , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/32 , H01L21/02 , B82Y40/00 , B82Y99/00 , H01L35/34
CPC分类号： H01L29/0673 , B82Y40/00 , H01L35/22 , H01L35/32
摘要： Disclosed are a thermoelectric device based on silicon nanowires including: a substrate; a silicon heat absorbing part absorbing heat, a silicon nanowire leg transferring heat, and a silicon heat releasing part releasing heat, which are formed on the substrate; and an insulating film with at least one or more holes, which is formed on the substrate including the silicon heat absorbing part, the silicon nanowire leg, and the silicon heat releasing part, and a method for manufacturing the same.
摘要翻译：公开了一种基于硅纳米线的热电装置，包括：基板; 吸收热的硅吸热部，传递热的硅纳米线支脚和释放热的硅散热部，形成在基板上; 以及具有至少一个以上的孔的绝缘膜及其制造方法，该绝缘膜形成在包括硅吸热部，硅纳米线支腿和硅散热部的基板上。

4. 发明授权

US08212212B2 Thermoelectric device and method of forming the same, temperature sensing sensor, and heat-source image sensor using the same 失效
标题翻译：热电装置及其形成方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US08212212B2
公开(公告)日：2012-07-03
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： G02F1/01
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

5. 发明申请

US20120160292A1 THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：热电装置及其制造方法
公开(公告)号：US20120160292A1
公开(公告)日：2012-06-28
申请号：US13323844
申请日：2011-12-13
申请人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/14 , H01L35/34 , H01L35/32 , H01L37/00
CPC分类号： H01L35/32 , H01L35/22
摘要： A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.
摘要翻译：热电装置包括：基板; 第一导电类型的第一纳米线，其形成在基板的一侧上; 与第一纳米线相对的第二导电类型的第二纳米线; 通常连接到第一纳米线的一端和第二纳米线的一端的高温部分; 低温部分分别连接到第一纳米线的另一端和第二纳米线的另一端; 形成在所述第一纳米线和所述第二纳米线上的绝缘层; 形成在第一纳米线上的绝缘层的一部分上的第一金属层，以便控制第一纳米线的电位; 以及形成在第二纳米线上的绝缘层的一部分上的第二金属层，以便控制第二纳米线的电位。

6. 发明申请

US20110198498A1 THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME 失效
标题翻译：热电装置及其制造方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US20110198498A1
公开(公告)日：2011-08-18
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： H01L23/34 , H01L21/02 , H01J31/49 , G01K7/04 , B82Y99/00
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

7. 发明申请

US20130139864A1 THERMOELECTRIC DEVICES 有权
标题翻译：热电装置
公开(公告)号：US20130139864A1
公开(公告)日：2013-06-06
申请号：US13611189
申请日：2012-09-12
申请人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
发明人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
IPC分类号： H01L35/32 , H01L35/14 , H01L35/16 , B82Y99/00
CPC分类号： H01L35/32 , B82Y30/00
摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.
摘要翻译：提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。声子可能被粗糙的侧面散射，从而降低了装置的热导率。电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。光滑的侧面可以用于电子的流动路径。结果，在热电装置中，可以降低导热性并且可以保持导电性。

8. 发明授权

US09093606B2 Thermoelectric devices 有权
标题翻译：热电装置
公开(公告)号：US09093606B2
公开(公告)日：2015-07-28
申请号：US13611189
申请日：2012-09-12
申请人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
发明人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
IPC分类号： H01L35/30 , H01L35/32 , B82Y30/00
CPC分类号： H01L35/32 , B82Y30/00
摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.
摘要翻译：提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。声子可能被粗糙的侧面散射，从而降低了装置的热导率。电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。光滑的侧面可以用于电子的流动路径。结果，在热电装置中，可以降低导热性并且可以保持导电性。

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