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1. 发明授权

US4845671A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4845671A
公开(公告)日：1989-07-04
申请号：US225318
申请日：1988-07-28
申请人： Youji Maruyama , Tadashi Ikeda , Teruaki Takeuchi , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Teruaki Takeuchi , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.
摘要翻译：一种布洛赫线存储器件和一种擦除信息的方法，其中为了擦除代表一比特信息并位于一个条带域的一个端部中的布洛赫线对，条带域通过降低偏置强度而被拉伸将具有与被擦除的布洛赫线对相反的磁化旋转的擦除布洛赫线对通过将电流脉冲信号提供给布置在基本上延伸的导体上而被注入延伸条带域的端部，通过恢复偏置磁场的强度，条状域的长度方向和拉伸的条状域被收缩，使得被擦除的Bloch线对与擦除布洛赫线对组合以取消前者。

2. 发明授权

US5047978A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US5047978A
公开(公告)日：1991-09-10
申请号：US362646
申请日：1989-06-07
申请人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866 , G11C19/0858
摘要： A Bloch line read/write memory in which a Bloch line or lines near the end portion of a stripe domain are moved in a predetermined direction to turn the direction of a wall magnetization at the end portion to a right turn direction as viewed form the surface of a film on which a bubble chopping conductor is disposed, and thereby reduce erroneous reading errors and increase the chopping current margin.
摘要翻译：布洛赫线读/写存储器，其中在条纹域的端部附近的布洛赫线或线沿预定方向移动，以将端部处的壁磁化方向转动到从表面观察的右转方向设置有气泡斩波导体的膜，从而减少错误读取误差并增加斩波电流裕度。

3. 发明授权

US4949304A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4949304A
公开(公告)日：1990-08-14
申请号：US241731
申请日：1988-09-08
申请人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866
摘要： In a Bloch line memory device, information corresponds to the presence or absence of a Bloch line pair present in the magnetic wall of a stripe magnetic domain. Reading of information is effected by converting the presence and absence of a Bloch line pair into the presence and absence of a magnetic bubble domain. The conversion is effected such that, after the stripe magnetic domain has been shrunk in such a manner that no Bloch line is present therein, a magnetic field for chopping off the stripe magnetic domain is applied to the shrunken portion. Thus, when a Bloch line is present at an end portion of the stripe magnetic domain, the stripe magnetic domain is chopped off to form a magnetic bubble domain, whereas, when no Bloch line is present at the end portion of the stripe magnetic domain, the stripe magnetic domain is not chopped off and therefore no magnetic bubble domain is formed. Whether the magnetic bubble domain is present or absent is processed as information.
摘要翻译：在布洛克线存储器件中，信息对应于存在于条状磁畴的磁壁中的Bloch线对的存在或不存在。信息的读取通过将Bloch线对的存在和不存在转换为存在和不存在磁性气泡域来实现。进行转换，使得在条形磁畴已经以不存在布洛赫线的方式收缩之后，将用于切断条形磁畴的磁场施加到缩小部分。因此，当在条形磁畴的端部存在布洛赫线时，条状磁畴被切断以形成磁性气泡畴，而当在条状磁畴的端部没有布洛赫线时，条纹磁畴不会被切断，因此不会形成磁性气泡畴。是否存在或不存在磁泡区域作为信息被处理。

4. 发明授权

US4744051A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4744051A
公开(公告)日：1988-05-10
申请号：US752587
申请日：1985-07-08
申请人： Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
发明人： Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
IPC分类号： G11C19/08
CPC分类号： G11C19/0883
摘要： A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.
摘要翻译：用于实现其实际使用的高存储密度的磁气泡存储装置通常由占据小环的大部分的离子注入元件和由软磁材料制成的其它元件组成。具有较高密度的离子注入次环被折叠多次，并且包括彼此相邻并通过内部转弯连接的直线传播轨迹，而具有面向内侧转弯的外侧转弯的另一条直线传播轨道被放置在相邻直线轨道

5. 发明授权

US4460412A Method of making magnetic bubble memory device by implanting hydrogen ions and annealing 失效
标题翻译：通过注入氢离子和退火制造磁性气泡存储器件的方法
公开(公告)号：US4460412A
公开(公告)日：1984-07-17
申请号：US367675
申请日：1982-04-12
申请人： Ryo Imura , Tadashi Ikeda , Ryo Suzuki , Nagatugu Koiso , Teruaki Takeuchi , Hiroshi Umezaki , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Ryo Suzuki , Nagatugu Koiso , Teruaki Takeuchi , Hiroshi Umezaki , Yutaka Sugita
IPC分类号： G11C11/14 , H01F10/24 , H01F41/14 , H01F41/32 , H01F41/34 , H01L21/265 , C04B35/00 , G11C19/08
CPC分类号： H01F10/24 , H01F41/14 , H01F41/32 , H01F41/34
摘要： A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.
摘要翻译：公开了一种用离子注入磁性石榴石膜的方法，其中在用于磁性气泡的单晶磁性石榴石膜上提供覆盖膜，并且通过覆盖物将氢离子注入到磁性石榴石膜的表面区域的期望部分中电影。根据该方法，可以形成离子注入层，其中在深度方向上的离子浓度分布是均匀的，此外，离子注入层中的面内各向异性场在退火中仅随时间降低一点处理。

6. 发明授权

US4584668A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4584668A
公开(公告)日：1986-04-22
申请号：US603450
申请日：1984-04-24
申请人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
发明人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
IPC分类号： G11C19/08
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.
摘要翻译：磁性气泡存储器件具有两种类型的气泡传播轨迹。通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。另一种由软磁性材料，例如坡莫合金形成。至少软磁性材料所在的区域的厚度比其他区域的厚度小。

7. 发明授权

US4769783A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4769783A
公开(公告)日：1988-09-06
申请号：US804164
申请日：1985-12-03
申请人： Toshihiro Sato , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Tadashi Ikeda , Ryo Suzuki
发明人： Toshihiro Sato , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C19/08
CPC分类号： G11C19/0875
摘要： In a magnetic bubble memory device employing ion-implanted tracks as minor loops for data storage, there is proposed a magnetic bubble memory element employing a minor loop having a folded structure and a turn composed of three tips formed convexly toward an ion-implanted area and two cusps as an inside turn for accomplishing the folding with a center as the ion-implanted area. In this inside turn, the line connecting between the two cusps of the turn includes a gradient in the range of 90 degrees to 120 degrees in relation to the ion-implanted straight line tracks.
摘要翻译：在采用离子注入轨迹作为用于数据存储的小环路的磁性气泡存储装置中，提出了一种使用具有折叠结构的小环的磁性气泡存储元件，并且由三个尖端组成的转弯，凸起地形成离子注入区域，作为内部转弯的两个尖端，用于实现具有中心的折叠作为离子注入区域。在这个内部转弯中，连接两个转弯之间的线相对于离子注入的直线轨迹包括在90度至120度范围内的梯度。

8. 发明授权

US4621344A Magnetic bubble device 失效
标题翻译：磁性气泡装置
公开(公告)号：US4621344A
公开(公告)日：1986-11-04
申请号：US669427
申请日：1984-11-08
申请人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Teruaki Takeuchi , Yutaka Sugita
发明人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Teruaki Takeuchi , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0816
摘要： A magnetic bubble device has minor loops formed through ion implantation and used for storing information. As the density becomes higher, inside turn corner portions are formed on the minor loops. Dummy patterns having circular, triangular or other shapes are disposed in the vicinity of the corner portion. It is desirable that the minimum distance X between the dummy pattern and the propagation track satisfy the relation of 1.5 D.ltoreq.X.ltoreq.3.5 D, where D represents the diameter of a bubble.
摘要翻译：磁性气泡装置具有通过离子注入形成的较小的环，用于存储信息。随着密度变高，在小环上形成内转角部。具有圆形，三角形或其他形状的虚拟图案设置在角部附近。期望虚拟图案和传播轨迹之间的最小距离X满足1.5D≤X≤3.5D的关系，其中D表示气泡的直径。

9. 发明授权

US4556582A Method of fabricating magnetic bubble memory device 失效
标题翻译：制造磁性气泡记忆装置的方法
公开(公告)号：US4556582A
公开(公告)日：1985-12-03
申请号：US375180
申请日：1982-05-05
申请人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Hiroshi Umezaki , Ryo Suzuki , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Teruaki Takeuchi , Hiroshi Umezaki , Ryo Suzuki , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08 , H01F10/24 , H01F41/14 , H01F41/34 , B05D3/06
CPC分类号： H01F41/14 , G11C19/08 , H01F10/24 , H01F41/34
摘要： A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.
摘要翻译：公开了一种制造磁性气泡存储装置的方法，其中将离子注入用于磁性气泡的磁性气泡膜的表面区域的期望部分中以形成具有约1％至约2.5％的应变的应变层，在磁性气泡膜上设置膜以覆盖气泡膜，然后在预定条件下对磁性气泡膜进行退火，由此提供具有大的偏置裕度的实用的磁性气泡存储装置。

10. 发明授权

US4831584A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4831584A
公开(公告)日：1989-05-16
申请号：US76215
申请日：1987-07-22
申请人： Youji Maruyama , Ryo Suzuki
发明人： Youji Maruyama , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device in which a stripe magnetic domain is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current is caused to flow through a single conductor which is so disposed as to cross the magnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain.

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